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Impact of impurities on leakage current induced by High-Energy Density Pulsed Laser Annealing in Si diodes
Authors:
Richard Monflier,
Richard Daubriac,
Mahmoud Haned,
Toshiyuki Tabata,
François Olivier,
Eric Imbernon,
Markus Italia,
Antonino La Magna,
Fulvio Mazzamuto,
Simona Boninelli,
Fuccio Cristiano,
Elena Bedel Pereira
Abstract:
For semiconductor device fabrication, Pulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes. Notably, it can provide ultrafast (~ns) and high temperature profiles ($>1000^\circ$C). When the maximum temperature exceeds the melting point, a solid-liquid phase transition is observed, immediately followed by rapid recrystallization. This unique annealing mechan…
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For semiconductor device fabrication, Pulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes. Notably, it can provide ultrafast (~ns) and high temperature profiles ($>1000^\circ$C). When the maximum temperature exceeds the melting point, a solid-liquid phase transition is observed, immediately followed by rapid recrystallization. This unique annealing mechanism gives raises questions about dopant diffusion and residual defects, in not only in the recrystallized region, but also just below it. As power devices require micrometer-sized junctions, high laser energy densities are needed, which were proved to promote the incorporation of complex impurities from the surface and the creation of defects at the liquid/solid interface. This paper reports on the impact of laser annealing at high energy densities (up to 8.0 J/cm$^2$) on the leakage current, using Schottky and PN diodes, and DLTS measurements. Various laser annealing conditions were used: energy densities between 1.7 and 8.0 J/cm$^2$ with 1 to 10 pulses. Our results suggest that the liquid and solid solubility of vacancies in silicon are fixed by the maximum temperature reached, so to the energy density. Increasing the number of laser pulses allows, not only to reach this maximum vacancy concentration but also to promote their diffusion towards the surface. Concomitantly, the in-diffusion of complex impurities inside the melted region allows the coupling between both defect types to create trap centers, responsible for the degradation of the leakage current.
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Submitted 13 January, 2025;
originally announced January 2025.
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Dopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing
Authors:
Toshiyuki Tabata,
Karim,
Huet,
Fabien Rozé,
Fulvio Mazzamuto,
Bernard Sermage,
Petros Kopalidis,
Dwight Roh
Abstract:
Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity in EC is so fast that a diffusion-less crystallization can be expected. In the contacts of advanced transistors, the active level at the metal/semiconductor Schottky interface must be very high to achieve a sub-10^{-9} oh…
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Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity in EC is so fast that a diffusion-less crystallization can be expected. In the contacts of advanced transistors, the active level at the metal/semiconductor Schottky interface must be very high to achieve a sub-10^{-9} ohm.cm2 contact resistivity, which has been already demonstrated by using the dopant surface segregation induced by MLA. However, the beneficial layer of a few nanometers at the surface may be easily consumed during subsequent contact cleaning and metallization. EC helps to address such kind of process integration issues, enabling the optimal positioning of the peak of the dopant chemical profile. However, there is a lack of experimental studies of EC in heavily-doped semiconductor materials. Furthermore, to the best of our knowledge, dopant activation by EC has never been experimentally reported. In this paper, we present dopant redistribution and activation by an EC process induced by UV nanosecond-pulsed MLA in heavily gallium (Ga) ion-implanted high Ge content SiGe. Based on the obtained results, we also highlight potential issues of integrating EC into real device fabrication processes and discuss how to manage them.
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Submitted 2 June, 2021;
originally announced June 2021.
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Resonant tunneling diode based on graphene/h-BN heterostructure
Authors:
Nguyen Viet Hung,
Fulvio Mazzamuto,
Arnaud Bournel,
Philippe Dollfus
Abstract:
In this letter, we propose the resonant tunneling diode (RTD) based on a double-barrier graphene/boron nitride (BN) heterostructure as device suitable to take advantage of the elaboration of atomic sheets containing different domains of BN and C phases within a hexagonal lattice. The device operation and performance are investigated by means of a self- consistent model within the non-equilibrium G…
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In this letter, we propose the resonant tunneling diode (RTD) based on a double-barrier graphene/boron nitride (BN) heterostructure as device suitable to take advantage of the elaboration of atomic sheets containing different domains of BN and C phases within a hexagonal lattice. The device operation and performance are investigated by means of a self- consistent model within the non-equilibrium Green's function formalism on a tight-binding Hamiltonian. This RTD exhibits a negative differential conductance effect which involves the resonant tunneling through both the electron and hole bound states of the graphene quantum well. It is shown that the peak- to-valley ratio can reach the value of 4 at room temperature for gapless graphene and the value of 13 for a bandgap of 50 meV.
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Submitted 23 January, 2012; v1 submitted 20 January, 2012;
originally announced January 2012.
