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Tailoring Superconducting Phases Observed in Hyperdoped Si:Ga for Cryogenic Circuit Applications
Authors:
K. Sardashti,
T. Nguyen,
M. Hatefipour,
W. L. Sarney,
J. Yuan,
W. Mayer,
K. Kisslinger,
J. Shabani
Abstract:
Hyperdoping with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T$_{\rm c}$) and magnetic fields (B$_{\rm c}$) make this phase attractive for cryogenic circuit applications, particularly for scalable hybrid superconductor--semiconductor platforms. However, the robustness of Si:Ga superconductivity at millikelvi…
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Hyperdoping with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T$_{\rm c}$) and magnetic fields (B$_{\rm c}$) make this phase attractive for cryogenic circuit applications, particularly for scalable hybrid superconductor--semiconductor platforms. However, the robustness of Si:Ga superconductivity at millikelvin temperatures is yet to be evaluated. Here, we report the presence of a reentrant resistive transition below T$_{\rm c}$ for Si:Ga whose strength strongly depends on the distribution of the Ga clusters that precipitate in the implanted Si after annealing. By monitoring the reentrant resistance over a wide parameter space of implantation energies and fluences, we determine conditions that significantly improve the coherent coupling of Ga clusters, therefore, eliminating the reentrant transition even at temperatures as low as 20~mK.
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Submitted 8 December, 2020;
originally announced December 2020.
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Observation of Distinct Superconducting Phases in Hyperdoped p-type Germanium
Authors:
Kasra Sardashti,
Tri D. Nguyen,
Wendy L. Sarney,
Asher C. Leff,
Mehdi Hatefipour,
Matthieu C. Dartiailh,
Joseph Yuan,
William Mayer,
Javad Shabani
Abstract:
Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in materials such as Silicon and Germanium. Here, we report systematic synthesis and characterization of superconducting phases in hyperdoped Germanium prepared by Gal…
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Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in materials such as Silicon and Germanium. Here, we report systematic synthesis and characterization of superconducting phases in hyperdoped Germanium prepared by Gallium ion implantation beyond its solubility limits. The resulting structural and physical characteristics have been tailored by changing the implantation energy and activation annealing temperature. Surprisingly, in addition to the poly-crystalline phase with weakly-coupled superconducting Ga clusters we find a nano-crystalline phase with quasi-2D characteristics consisting of a thin Ga film constrained near top surfaces. The new phase shows signatures of strong disorder such as anomalous B${\rm c}$ temperature dependence and crossings in magentoresistance isotherms. Apart from using hyperdoped Ge as a potential test-bed for studying signatures of quantum phase transitions (e.g. quantum Griffith singularity), our results suggest the possibility of integration of hyperdoped Ge nano-crystalline phase into superconducting circuits due to its 2D nature.
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Submitted 13 August, 2020;
originally announced August 2020.
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Tuning supercurrent in Josephson field effect transistors using h-BN dielectric
Authors:
Fatemeh Barati,
Josh P. Thompson,
Matthieu C. Dartiailh,
Kasra Sardashti,
William Mayer,
Joseph Yuan,
Kaushini Wickramasinghe,
K. Watanabe,
T. Taniguchi,
Hugh Churchill,
Javad Shabani
Abstract:
The transparent interface in epitaxial Al-InAs heterostructures provides an excellent platform for potential advances in mesoscopic and topological superconductivity. Semiconductor-based Josephson Junction Field Effect Transistors (JJ-FETs) fabricated on these heterostructures have a metallic gate that tunes the supercurrent. Here we report the fabrication and measurement of gate-tunable Al-InAs J…
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The transparent interface in epitaxial Al-InAs heterostructures provides an excellent platform for potential advances in mesoscopic and topological superconductivity. Semiconductor-based Josephson Junction Field Effect Transistors (JJ-FETs) fabricated on these heterostructures have a metallic gate that tunes the supercurrent. Here we report the fabrication and measurement of gate-tunable Al-InAs JJ-FETs in which the gate dielectric in contact with the InAs is produced by mechanically exfoliated hexagonal boron nitride (h-BN) followed by dry transfer using a van der Waals-mediated pick up process. We discuss the fabrication process that enables compatibility between layered material transfer and Al-InAs heterostructures to avoid chemical reactions and unintentional doping that could affect the characteristics of the JJ-FET. We achieve full gate-tunablity of supercurrent by using only 5~nm thick h-BN flakes. We contrast our process with devices fabricated using a conventional AlO$_{\rm x}$ gate dielectric and show that h-BN could be an excellent competing dielectric for JJ-FET devices. We observe that the product of normal resistance and critical current, I$_{\rm c}$R$_{\rm n}$, is comparable for both types of devices, but strikingly higher R$_{\rm n}$ for the h-BN-based devices indicating that the surface is doped less compared to AlO$_{\rm x}$ gate dielectric.
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Submitted 27 January, 2021; v1 submitted 23 July, 2020;
originally announced July 2020.
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Missing Shapiro steps in topologically trivial Josephson Junction on InAs quantum well
Authors:
Matthieu C. Dartiailh,
Joseph J. Cuozzo,
William Mayer,
Joseph Yuan,
Kaushini S. Wickramasinghe,
Enrico Rossi,
Javad Shabani
Abstract:
Josephson junctions hosting Majorana fermions have been predicted to exhibit a 4$π$ periodic current phase relation. The experimental consequence of this periodicity is the disappearance of odd steps in Shapiro steps experiments. Experimentally, missing odd Shapiro steps have been observed in a number of materials systems with strong spin-orbit coupling and have been interpreted in the context of…
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Josephson junctions hosting Majorana fermions have been predicted to exhibit a 4$π$ periodic current phase relation. The experimental consequence of this periodicity is the disappearance of odd steps in Shapiro steps experiments. Experimentally, missing odd Shapiro steps have been observed in a number of materials systems with strong spin-orbit coupling and have been interpreted in the context of topological superconductivity. Here, we report on missing odd steps in topologically trivial Josephson junctions fabricated on InAs quantum wells. We ascribe our observations to the high transparency of our junctions allowing Landau-Zener transitions. The probability of these processes is found to be independent of the drive frequency. We analyze our results using a bi-modal transparency distribution which demonstrates that only few modes carrying 4$π$ periodic current are sufficient to describe the disappearance of odd steps. Our findings highlight the elaborate circumstances that have to be considered in the investigation of the 4$π$ Josephson junctions in relationship to topological superconductivity.
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Submitted 30 April, 2020;
originally announced May 2020.
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Experimental Measurements of Effective Mass in Near Surface InAs Quantum Wells
Authors:
Joseph Yuan,
Mehdi Hatefipour,
Brenden A. Magill,
William Mayer,
Matthieu C. Dartiailh,
Kasra Sardashti,
Kaushini S. Wickramasinghe,
Giti A. Khodaparast,
Yasuhiro H. Matsuda,
Yoshimitsu Kohama,
Zhuo Yang,
Sunil Thapa,
Christopher J. Stanton,
Javad Shabani
Abstract:
Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological superconductivity. In this work, we present magnetotransport properties of two-dimensional electron gases confined to an indium arsenide quantum well near the…
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Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological superconductivity. In this work, we present magnetotransport properties of two-dimensional electron gases confined to an indium arsenide quantum well near the surface. The electron mass extracted from the envelope of the Shubnikov-de Haas oscillations shows an average effective mass $m^{*}$ = 0.04 at low magnetic field. Complementary to our magnetotransport study, we employed cyclotron resonance measurements and extracted the electron effective mass in the ultra high magnetic field regime. Our measurements show that the effective mass depends on magnetic field in this regime. The data can be understood by considering a model that includes non-parabolicity of the indium arsenide conduction bands.
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Submitted 18 May, 2020; v1 submitted 6 November, 2019;
originally announced November 2019.
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Superconducting proximity effect in InAsSb surface quantum wells with in-situ Al contact
Authors:
William Mayer,
William F. Schiela,
Joseph Yuan,
Mehdi Hatefipour,
Wendy L. Sarney,
Stefan P. Svensson,
Asher C. Leff,
Tiago Campos,
Kaushini S. Wickramasinghe,
Matthieu C. Dartiailh,
Igor Zutic,
Javad Shabani
Abstract:
We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable prop…
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We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable properties have not been previously measured in epitaxial heterostructures with superconductors, which could serve as a platform for fault-tolerant topological quantum computing. Through structural and transport characterization we observe high-quality interfaces and strong spin-orbit coupling. We fabricate Josephson junctions based on InAs$_{0.5}$Sb$_{0.5}$ quantum wells and observe strong proximity effect. These junctions exhibit product of normal resistance and critical current, $I_{c}R_{N} = \SI{270}{\micro V}$, and excess current, $I_{ex}R_{N} = \SI{200}{\micro V}$ at contact separations of 500~nm. Both of these quantities demonstrate a robust and long-range proximity effect with highly-transparent contacts.
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Submitted 31 March, 2020; v1 submitted 27 September, 2019;
originally announced September 2019.
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Phase Control of Majorana Bound States in a Topological X Junction
Authors:
Tong Zhou,
Matthieu C. Dartiailh,
William Mayer,
Jong E. Han,
Alex Matos-Abiague,
Javad Shabani,
Igor Zutic
Abstract:
Topological superconductivity supports exotic Majorana bound states (MBS) which are chargeless zero-energy emergent quasiparticles. With their non-Abelian exchange statistics and fractionalization of a single electron stored nonlocally as a spatially separated MBS, they are particularly suitable for implementing fault-tolerant topological quantum computing. While the main efforts to realize MBS ha…
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Topological superconductivity supports exotic Majorana bound states (MBS) which are chargeless zero-energy emergent quasiparticles. With their non-Abelian exchange statistics and fractionalization of a single electron stored nonlocally as a spatially separated MBS, they are particularly suitable for implementing fault-tolerant topological quantum computing. While the main efforts to realize MBS have focused on one-dimensional systems, the onset of topological superconductivity requires delicate parameter tuning and geometric constraints pose significant challenges for their control and demonstration of non-Abelian statistics. To overcome these challenges, building on recent experimental advances in planar Josephson junctions (JJs), we propose a MBS platform of X-shaped JJs. This versatile implementation reveals how external flux control of the superconducting phase difference can generate and manipulate multiple MBS pairs to probe non-Abelian statistics. The underlying topological superconductivity exists over a large parameter space, consistent with materials used in our fabrication of such X junctions, as an important step towards scalable topological quantum computing.
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Submitted 21 February, 2020; v1 submitted 11 September, 2019;
originally announced September 2019.
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Phase signature of topological transition in Josephson Junctions
Authors:
Matthieu C. Dartiailh,
William Mayer,
Joseph Yuan,
Kaushini S. Wickramasinghe,
Alex Matos-Abiague,
Igor Žutić,
Javad Shabani
Abstract:
Topological superconductivity holds promise for fault-tolerant quantum computing. While planar Josephson junctions are attractive candidates to realize this exotic state, direct phase-measurements as the fingerprint of the topological transition are missing. By embedding two gate-tunable Al/InAs Josephson junctions in a loop geometry, we measure a $π$-jump in the junction phase with increasing in-…
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Topological superconductivity holds promise for fault-tolerant quantum computing. While planar Josephson junctions are attractive candidates to realize this exotic state, direct phase-measurements as the fingerprint of the topological transition are missing. By embedding two gate-tunable Al/InAs Josephson junctions in a loop geometry, we measure a $π$-jump in the junction phase with increasing in-plane magnetic field, ${\bf B}_\|$. This jump is accompanied by a minimum of the critical current, indicating a closing and reopening of the superconducting gap, strongly anisotropic in ${\bf B}_\|$. Our theory confirms that these signatures of a topological transition are compatible with the emergence of Majorana states.
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Submitted 22 January, 2021; v1 submitted 3 June, 2019;
originally announced June 2019.
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Gate Controlled Anomalous Phase Shift in Al/InAs Josephson Junctions
Authors:
William Mayer,
Matthieu C. Dartiailh,
Joseph Yuan,
Kaushini S. Wickramasinghe,
Enrico Rossi,
Javad Shabani
Abstract:
In a standard Josephson junction the current is zero when the phase difference between the superconducting leads is zero. This condition is protected by parity and time-reversal symmetries. However, the combined presence of spin-orbit coupling and magnetic field breaks these symmetries and can lead to a finite supercurrent even when the phase difference is zero. This is the so called anomalous Jos…
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In a standard Josephson junction the current is zero when the phase difference between the superconducting leads is zero. This condition is protected by parity and time-reversal symmetries. However, the combined presence of spin-orbit coupling and magnetic field breaks these symmetries and can lead to a finite supercurrent even when the phase difference is zero. This is the so called anomalous Josephson effect -- the hallmark effect of superconducting spintronics --and can be characterized by the corresponding anomalous phase shift ($φ_0$). We report the observation of a tunable anomalous Josephson effect in InAs/Al Josephson junctions measured via a superconducting quantum interference device (SQUID). By gate controlling the density of InAs we are able to tune the spin-orbit coupling of the Josephson junction by more than one order of magnitude. This gives us the ability to tune $φ_0$, and opens several new opportunities for superconducting spintronics, and new possibilities for realizing and characterizing topological superconductivity.
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Submitted 29 May, 2019;
originally announced May 2019.
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The multi-terminal Josephson effect
Authors:
Natalia Pankratova,
Hanho Lee,
Roman Kuzmin,
Maxim Vavilov,
Kaushini Wickramasinghe,
William Mayer,
Joseph Yuan,
Javad Shabani,
Vladimir E. Manucharyan
Abstract:
Establishment of phase-coherence and a non-dissipative (super)current between two weakly coupled superconductors, known as the Josephson effect, plays a foundational role in basic physics and applications to metrology, precision sensing, high-speed digital electronics, and quantum computing. The junction ranges from planar insulating oxides to single atoms, molecules, semiconductor nanowires, and…
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Establishment of phase-coherence and a non-dissipative (super)current between two weakly coupled superconductors, known as the Josephson effect, plays a foundational role in basic physics and applications to metrology, precision sensing, high-speed digital electronics, and quantum computing. The junction ranges from planar insulating oxides to single atoms, molecules, semiconductor nanowires, and generally to any finite-size coherent conductor. Recently, junctions of more than two superconducting terminals gained broad attention in the context of braiding of Majorana fermions in the solid state for fault-tolerant quantum computing, and accessing physics and topology in dimensions higher than three. Here we report the first observation of Josephson effect in 3- and 4-terminal junctions, fabricated in a top-down fashion from a semiconductor/superconductor (InAs/Al) epitaxial two-dimensional heterostructure. Due to interactions, the critical current of an N-terminal junction becomes the boundary of an (N-1)-dimensional manifold of simultaneously allowed supercurrents. The measured shapes of such manifolds are explained by the scattering theory of mesoscopic superconductivity, and they can be remarkably sensitive to the junction's symmetry class. Furthermore, we observed a notably high-order (up to 8) multiple Andreev reflections simultaneously across every terminals pair, which verifies the multi-terminal nature of normal scattering and a high interface quality in our devices. Given the previously shown gate-control of carrier density and evidence of spin-orbit scattering in InAs/Al heterostructures, and device compatibility with other 2D materials, the multi-terminal Josephson effect reported here can become a testbed for physics and applications of topological superconductivity.
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Submitted 14 December, 2018;
originally announced December 2018.
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Superconducting proximity effect in epitaxial Al-InAs heterostructures
Authors:
William Mayer,
Joseph Yuan,
Kaushini Wickramasinghe,
Tri Nguyen,
Matthieu C. Dartiailh,
Javad Shabani
Abstract:
Semiconductor-based Josephson junctions provide a platform for studying proximity effect due to the possibility of tuning junction properties by gate voltage and large-scale fabrication of complex Josephson circuits. Recently Josephson junctions using InAs weak link with epitaxial aluminum contact have improved the product of normal resistance and critical current, $I_cR_N$, in addition to fabrica…
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Semiconductor-based Josephson junctions provide a platform for studying proximity effect due to the possibility of tuning junction properties by gate voltage and large-scale fabrication of complex Josephson circuits. Recently Josephson junctions using InAs weak link with epitaxial aluminum contact have improved the product of normal resistance and critical current, $I_cR_N$, in addition to fabrication process reliability. Here we study similar devices with epitaxial contact and find large supercurrent and substantial product of $I_cR_N$ in our junctions. However we find a striking difference when we compare these samples with higher mobility samples in terms of product of excess current and normal resistance, $I_{ex}R_N$. The excess current is negligible in lower mobility devices while it is substantial and independent of gate voltage and junction length in high mobility samples. This indicates that even though both sample types have epitaxial contacts only the high-mobility one has a high transparency interface. In the high mobility short junctions, we observe values of $I_cR_N/Δ\sim 2.2$ and $I_{ex}R_N/Δ\sim 1.5$ in semiconductor weak links.
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Submitted 9 January, 2019; v1 submitted 5 October, 2018;
originally announced October 2018.
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Transport Properties of Near Surface InAs Two-dimensional Heterostructures
Authors:
Kaushini Wickramasinghe,
William Mayer,
Joseph Yuan,
Tri Nguyen,
Lucy Jiao,
Vladimir Manucharyan,
Javad Shabani
Abstract:
Two-dimensional electron systems (2DESs) confined to the surface of narrowband semiconductors have attracted great interest since they can easily integrate with superconductivity (or ferromagnetism) enabling new possibilities in hybrid device architectures and study of exotic states in proximity of superconductors. In this work, we study indium arsenide heterostructures where combination of clean…
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Two-dimensional electron systems (2DESs) confined to the surface of narrowband semiconductors have attracted great interest since they can easily integrate with superconductivity (or ferromagnetism) enabling new possibilities in hybrid device architectures and study of exotic states in proximity of superconductors. In this work, we study indium arsenide heterostructures where combination of clean interface with superconductivity, high mobility and spin-orbit coupling can be achieved. The weak antilocalization measurements indicate presence of strong spin-orbit coupling at high densities. We study the magnetotransport as a function of top barrier and density and report clear observation of integer quantum Hall states. We report improved electron mobility reaching up to 44,000 cm$^{2}$/Vs in undoped heterstructures and well developed integer quantum Hall states starting as low as 2.5~T.
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Submitted 9 January, 2019; v1 submitted 26 February, 2018;
originally announced February 2018.
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Positive Quantum Magnetoresistance in Tilted Magnetic Field
Authors:
William Mayer,
Areg Ghazaryan,
Pouyan Ghaemi,
Sergey Vitkalov,
A. A. Bykov
Abstract:
Transport properties of highly mobile 2D electrons are studied in symmetric GaAs quantum wells placed in titled magnetic fields. Quantum positive magnetoresistance (QPMR) is observed in magnetic fields perpendicular to the 2D layer. Application of in-plane magnetic field produces a dramatic decrease of the QPMR. This decrease correlates strongly with the reduction of the amplitude of Shubnikov de…
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Transport properties of highly mobile 2D electrons are studied in symmetric GaAs quantum wells placed in titled magnetic fields. Quantum positive magnetoresistance (QPMR) is observed in magnetic fields perpendicular to the 2D layer. Application of in-plane magnetic field produces a dramatic decrease of the QPMR. This decrease correlates strongly with the reduction of the amplitude of Shubnikov de Haas resistance oscillations due to modification of the electron spectrum via enhanced Zeeman splitting. Surprisingly no quantization of the spectrum is detected when the Zeeman energy exceeds the half of the cyclotron energy suggesting an abrupt transformation of the electron dynamics. Observed angular evolution of QPMR implies strong mixing between spin subbands. Theoretical estimations indicate that in the presence of spin-orbital interaction the elastic impurity scattering provides significant contribution to the spin mixing in GaAs quantum wells at high filling factors.
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Submitted 27 November, 2016;
originally announced November 2016.
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Resistance oscillations of two-dimensional electrons in crossed electric and tilted magnetic fields
Authors:
William Mayer,
Sergey Vitkalov,
A. A. Bykov
Abstract:
Effect of dc electric field on transport of highly mobile 2D electrons is studied in wide GaAs single quantum wells placed in titled magnetic fields. The study shows that in perpendicular magnetic field resistance oscillates due to electric field induced Landau-Zener transitions between quantum levels that corresponds to geometric resonances between cyclotron orbits and periodic modulation of elec…
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Effect of dc electric field on transport of highly mobile 2D electrons is studied in wide GaAs single quantum wells placed in titled magnetic fields. The study shows that in perpendicular magnetic field resistance oscillates due to electric field induced Landau-Zener transitions between quantum levels that corresponds to geometric resonances between cyclotron orbits and periodic modulation of electron density of states. Magnetic field tilt inverts these oscillations. Surprisingly the strongest inverted oscillations are observed at a tilt corresponding to nearly absent modulation of the electron density of states in regime of magnetic breakdown of semiclassical electron orbits. This phenomenon establishes an example of quantum resistance oscillations due to Landau quantization, which occur in electron systems with a constant density of states.
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Submitted 2 May, 2016;
originally announced May 2016.
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Magneto-intersubband resistance oscillations in GaAs quantum wells placed in a tilted magnetic field
Authors:
William Mayer,
Jesse Kanter,
Javad Shabani,
Sergey Vitkalov,
A. K. Bakarov,
A. A. Bykov
Abstract:
The magnetotransport of highly mobile 2D electrons in wide GaAs single quantum wells with three populated subbands placed in titled magnetic fields is studied. The bottoms of the lower two subbands have nearly the same energy while the bottom of the third subband has a much higher energy ($E_1\approx E_2<<E_3$). At zero in-plane magnetic fields magneto-intersubband oscillations (MISO) between the…
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The magnetotransport of highly mobile 2D electrons in wide GaAs single quantum wells with three populated subbands placed in titled magnetic fields is studied. The bottoms of the lower two subbands have nearly the same energy while the bottom of the third subband has a much higher energy ($E_1\approx E_2<<E_3$). At zero in-plane magnetic fields magneto-intersubband oscillations (MISO) between the $i^{th}$ and $j^{th}$ subbands are observed and obey the relation $Δ_{ij}=E_j-E_i=k\cdot\hbarω_c$, where $ω_c$ is the cyclotron frequency and $k$ is an integer. An application of in-plane magnetic field produces dramatic changes in MISO and the corresponding electron spectrum. Three regimes are identified. At $\hbarω_c \ll Δ_{12}$ the in-plane magnetic field increases considerably the gap $Δ_{12}$, which is consistent with the semi-classical regime of electron propagation. In contrast at strong magnetic fields $\hbarω_c \gg Δ_{12}$ relatively weak oscillating variations of the electron spectrum with the in-plane magnetic field are observed. At $\hbarω_c \approx Δ_{12}$ the electron spectrum undergoes a transition between these two regimes through magnetic breakdown. In this transition regime MISO with odd quantum number $k$ terminate, while MISO corresponding to even $k$ evolve $continuously$ into the high field regime corresponding to $\hbarω_c \gg Δ_{12}$
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Submitted 8 March, 2016;
originally announced March 2016.
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Frequency dispersion of nonlinear response of thin superconducting films in Berezinskii-Kosterlitz-Thouless state
Authors:
Scott Dietrich,
William Mayer,
Sean Byrnes,
Sergey Vitkalov,
A. Sergeev,
Anthony T. Bollinger,
Ivan Bozovic
Abstract:
The effects of microwave radiation on the transport properties of atomically thin $La_{2-x}Sr_xCuO_4$ films were studied in the 0.1-13 GHz frequency range. Resistance changes induced by microwaves were investigated at different temperatures near the superconducting transition. The nonlinear response decreases by several orders of magnitude within a few GHz of a cutoff frequency $ν_{cut} \approx$ 2…
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The effects of microwave radiation on the transport properties of atomically thin $La_{2-x}Sr_xCuO_4$ films were studied in the 0.1-13 GHz frequency range. Resistance changes induced by microwaves were investigated at different temperatures near the superconducting transition. The nonlinear response decreases by several orders of magnitude within a few GHz of a cutoff frequency $ν_{cut} \approx$ 2 GHz. Numerical simulations that assume an ac response to follow the dc V-I characteristics of the films reproduce well the low frequency behavior, but fail above $ν_{cut}$. The results indicate that two-dimensional superconductivity is resilient against high-frequency microwave radiation, because vortex-antivortex dissociation is dramatically suppressed in two-dimensional superconducting condensates oscillating at high frequencies.
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Submitted 23 February, 2015;
originally announced February 2015.
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Dynamics of Quantal Heating in Electron Systems with Discrete Spectra
Authors:
Scott Dietrich,
William Mayer,
Sergey Vitkalov,
A. A. Bykov
Abstract:
The temporal evolution of quantal Joule heating of 2D electrons in GaAs quantum well placed in quantizing magnetic fields is studied using a difference frequency method. The method is based on measurements of the electron conductivity oscillating at the beat frequency $f=f_1-f_2$ between two microwaves applied to 2D system at frequencies $f_1$ and $f_2$. The method provides $direct$ access to the…
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The temporal evolution of quantal Joule heating of 2D electrons in GaAs quantum well placed in quantizing magnetic fields is studied using a difference frequency method. The method is based on measurements of the electron conductivity oscillating at the beat frequency $f=f_1-f_2$ between two microwaves applied to 2D system at frequencies $f_1$ and $f_2$. The method provides $direct$ access to the dynamical characteristics of the heating and yields the inelastic scattering time $τ_{in}$ of 2D electrons. The obtained $τ_{in}$ is strongly temperature dependent, varying from 0.13 ns at 5.5K to 1 ns at 2.4K in magnetic field $B$=0.333T. When temperature $T$ exceeds the Landau level separation the relaxation rate $1/τ_{in}$ is proportional to $T^2$, indicating the electron-electron interaction as the dominant mechanism limiting the quantal heating. At lower temperatures the rate tends to be proportional to $T^3$, indicating considerable contribution from electron-phonon scattering.
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Submitted 9 October, 2014;
originally announced October 2014.
