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Anderson mobility edge as a percolation transition
Authors:
Marcel Filoche,
Pierre Pelletier,
Dominique Delande,
Svitlana Mayboroda
Abstract:
The location of the mobility edge is a long standing problem in Anderson localization. In this paper, we show that the effective confining potential introduced in the localization landscape (LL) theory predicts the onset of delocalization in 3D tight-binding models, in a large part of the energy-disorder diagram. Near the edge of the spectrum, the eigenstates are confined inside the basins of the…
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The location of the mobility edge is a long standing problem in Anderson localization. In this paper, we show that the effective confining potential introduced in the localization landscape (LL) theory predicts the onset of delocalization in 3D tight-binding models, in a large part of the energy-disorder diagram. Near the edge of the spectrum, the eigenstates are confined inside the basins of the LL-based potential. The delocalization transition corresponds to the progressive merging of these basins resulting in the percolation of this classically-allowed region throughout the system. This approach, shown to be valid both in the cases of uniform and binary disorders despite their very different phase diagrams, allows us to reinterpret the Anderson transition in the tight-binding model: the mobility edge appears to be composed of two parts, one being understood as a percolation transition.
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Submitted 23 May, 2024; v1 submitted 7 September, 2023;
originally announced September 2023.
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Wigner-Weyl description of light absorption in disordered semiconductor alloys using the localization landscape theory
Authors:
Jean-Philippe Banon,
Pierre Pelletier,
Claude Weisbuch,
Svitlana Mayboroda,
Marcel Filoche
Abstract:
The presence of disorder in semiconductors can dramatically change their physical properties. Yet, models faithfully accounting for it are still scarce and computationally inefficient. We present a mathematical and computational model able to simulate the optoelectronic response of semiconductor alloys of several tens of nanometer sidelength, while at the same time accounting for the quantum local…
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The presence of disorder in semiconductors can dramatically change their physical properties. Yet, models faithfully accounting for it are still scarce and computationally inefficient. We present a mathematical and computational model able to simulate the optoelectronic response of semiconductor alloys of several tens of nanometer sidelength, while at the same time accounting for the quantum localization effects induced by the compositional disorder at the nano-scale. The model is based on a Wigner-Weyl analysis of the structure of electron and hole eigenstates in phase space made possible by the localization landscape theory. After validation against eigenstates-based computations in 1D and 2D, our model is applied to the computation of light absorption in 3D InGaN alloys of different compositions. We obtain the detailed structures of the absorption tail below the average bandgap and the Urbach energies of all simulated compositions. Moreover, the Wigner-Weyl formalism allows us to define and compute 3D maps of the effective locally absorbed power at all frequencies. Finally the proposed approach opens the way to generalize this method to all energy-exchange processes such as radiative and non-radiative recombination in realistic devices.
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Submitted 2 April, 2022; v1 submitted 13 December, 2021;
originally announced December 2021.
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Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
Authors:
Chi-Kang Li,
Marco Piccardo,
Li-Shuo Lu,
Svitlana Mayboroda,
Lucio Martinelli,
Jacques Peretti,
James S. Speck,
Claude Weisbuch,
Marcel Filoche,
Yuh-Renn Wu
Abstract:
This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the disordered system change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition they lead to percolative transport…
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This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the disordered system change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition they lead to percolative transport through paths of minimal energy in the 2D landscape of disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schrödinger equation resolution. The theory also provides a good approximation to the density of states for the disordered system over the full range of energies required to account for transport at room-temperature. The current-voltage characteristics modeled by 3-D simulation of a full nitride-based light-emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.
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Submitted 18 April, 2017;
originally announced April 2017.
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Localization landscape theory of disorder in semiconductors I: Theory and modeling
Authors:
Marcel Filoche,
Marco Piccardo,
Yuh-Renn Wu,
Chi-Kang Li,
Claude Weisbuch,
Svitlana Mayboroda
Abstract:
We present here a model of carrier distribution and transport in semiconductor alloys accounting for quantum localization effects in disordered materials. This model is based on the recent development of a mathematical theory of quantum localization which introduces for each type of carrier a spatial function called \emph{localization landscape}. These landscapes allow us to predict the localizati…
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We present here a model of carrier distribution and transport in semiconductor alloys accounting for quantum localization effects in disordered materials. This model is based on the recent development of a mathematical theory of quantum localization which introduces for each type of carrier a spatial function called \emph{localization landscape}. These landscapes allow us to predict the localization regions of electron and hole quantum states, their corresponding energies, and the local densities of states. We show how the various outputs of these landscapes can be directly implemented into a drift-diffusion model of carrier transport and into the calculation of absorption/emission transitions. This creates a new computational model which accounts for disorder localization effects while also capturing two major effects of quantum mechanics, namely the reduction of barrier height (tunneling effect), and the raising of energy ground states (quantum confinement effect), without having to solve the Schrödinger equation. Finally, this model is applied to several one-dimensional structures such as single quantum wells, ordered and disordered superlattices, or multi-quantum wells, where comparisons with exact Schrödinger calculations demonstrate the excellent accuracy of the approximation provided by the landscape theory.
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Submitted 18 April, 2017;
originally announced April 2017.
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One single static measurement predicts wave localization in complex structures
Authors:
Gautier Lefebvre,
Alexane Gondel,
Marc Dubois,
Michael Atlan,
Florian Feppon,
Aimé Labbé,
Camille Gillot,
Alix Garelli,
Maxence Ernoult,
Svitlana Mayboroda,
Marcel Filoche,
Patrick Sebbah
Abstract:
A recent theoretical breakthrough has brought a new tool, called \emph{localization landscape}, to predict the localization regions of vibration modes in complex or disordered systems. Here, we report on the first experiment which measures the localization landscape and demonstrates its predictive power. Holographic measurement of the static deformation under uniform load of a thin plate with comp…
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A recent theoretical breakthrough has brought a new tool, called \emph{localization landscape}, to predict the localization regions of vibration modes in complex or disordered systems. Here, we report on the first experiment which measures the localization landscape and demonstrates its predictive power. Holographic measurement of the static deformation under uniform load of a thin plate with complex geometry provides direct access to the landscape function. When put in vibration, this system shows modes precisely confined within the sub-regions delineated by the landscape function. Also the maxima of this function match the measured eigenfrequencies, while the minima of the valley network gives the frequencies at which modes become extended. This approach fully characterizes the low frequency spectrum of a complex structure from a single static measurement. It paves the way to the control and engineering of eigenmodes in any vibratory system, especially where a structural or microscopic description is not accessible.
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Submitted 11 April, 2016;
originally announced April 2016.
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Effective confining potential of quantum states in disordered media
Authors:
Douglas N. Arnold,
Guy David,
David Jerison,
Svitlana Mayboroda,
Marcel Filoche
Abstract:
The amplitude of localized quantum states in random or disordered media may exhibit long range exponential decay. We present here a theory that unveils the existence of an effective potential which finely governs the confinement of these states. In this picture, the boundaries of the localization subregions for low energy eigenfunctions correspond to the barriers of this effective potential, and t…
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The amplitude of localized quantum states in random or disordered media may exhibit long range exponential decay. We present here a theory that unveils the existence of an effective potential which finely governs the confinement of these states. In this picture, the boundaries of the localization subregions for low energy eigenfunctions correspond to the barriers of this effective potential, and the long range exponential decay characteristic of Anderson localization is explained as the consequence of multiple tunneling in the dense network of barriers created by this effective potential. Finally, we show that the Weyl's formula based on this potential turns out to be a remarkable approximation of the density of states for a large variety of one-dimensional systems, periodic or random.
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Submitted 2 February, 2016; v1 submitted 11 May, 2015;
originally announced May 2015.
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Dual hidden landscapes in Anderson localization on discrete lattices
Authors:
Marcelo Leite Lyra,
Svitlana Mayboroda,
Marcel Filoche
Abstract:
The localization subregions of stationary waves in continuous disordered media have been recently demonstrated to be governed by a hidden landscape that is the solution of a Dirichlet problem expressed with the wave operator. In this theory, the strength of Anderson localization confinement is determined by this landscape, and continuously decreases as the energy increases. However, this picture h…
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The localization subregions of stationary waves in continuous disordered media have been recently demonstrated to be governed by a hidden landscape that is the solution of a Dirichlet problem expressed with the wave operator. In this theory, the strength of Anderson localization confinement is determined by this landscape, and continuously decreases as the energy increases. However, this picture has to be changed in discrete lattices in which the eigenmodes close to the edge of the first Brillouin zone are as localized as the low energy ones. Here we show that in a 1D discrete lattice, the localization of low and high energy modes is governed by two different landscapes, the high energy landscape being the solution of a dual Dirichlet problem deduced from the low energy one using the symmetries of the Hamiltonian. We illustrate this feature using the one-dimensional tight-binding Hamiltonian with random on-site potentials as a prototype model. Moreover we show that, besides unveiling the subregions of Anderson localization, these dual landscapes also provide an accurate overal estimate of the localization length over the energy spectrum, especially in the weak disorder regime.
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Submitted 9 October, 2014; v1 submitted 8 October, 2014;
originally announced October 2014.
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The Hidden Landscape of Localization
Authors:
Marcel Filoche,
Svitlana Mayboroda
Abstract:
Wave localization occurs in all types of vibrating systems, in acoustics, mechanics, optics, or quantum physics. It arises either in systems of irregular geometry (weak localization) or in disordered systems (Anderson localization). We present here a general theory that explains how the system geometry and the wave operator interplay to give rise to a "landscape" that splits the system into weakly…
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Wave localization occurs in all types of vibrating systems, in acoustics, mechanics, optics, or quantum physics. It arises either in systems of irregular geometry (weak localization) or in disordered systems (Anderson localization). We present here a general theory that explains how the system geometry and the wave operator interplay to give rise to a "landscape" that splits the system into weakly coupled subregions, and how these regions shape the spatial distribution of the vibrational eigenmodes. This theory holds in any dimension, for any domain shape, and for all operators deriving from an energy form. It encompasses both weak and Anderson localizations in the same mathematical frame and shows, in particular, that Anderson localization can be understood as a special case of weak localization in a very rough landscape.
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Submitted 2 July, 2011;
originally announced July 2011.
