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High Entropy Alloy CrFeNiCoCu sputtered films
Authors:
J. Mayandi,
M. Schrade,
P. Vajeeston,
M. Stange,
A. M. Lind,
M. F. Sunding,
J. Deuermeier,
E. Fortunato,
O. M. Løvvik,
A. G. Ulyashin,
S. Diplas,
P. A. Carvalho,
T. G. Finstad
Abstract:
High entropy alloy(HEA) films of CrFeCoNiCu were prepared by sputtering, their structure was characterized, and their electric properties measured by temperature dependent Hall and Seebeck measurement. The HEA films show a solid solution with fcc structure, and a 111 texture with columnar grains of widths 15-30 nm extending through film thickness with very many twins. The residual electrical resis…
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High entropy alloy(HEA) films of CrFeCoNiCu were prepared by sputtering, their structure was characterized, and their electric properties measured by temperature dependent Hall and Seebeck measurement. The HEA films show a solid solution with fcc structure, and a 111 texture with columnar grains of widths 15-30 nm extending through film thickness with very many twins. The residual electrical resistivity of the films is around 140 μΩcm and the temperature dependence of the resistivity is metal-like. The temperature coefficient of resistivity (TCR) is small (2 ppm/K). The Hall coefficient is positive while the Seebeck coefficients is negative. This is interpreted as arising from an electronic structure where the Fermi level passes through band states having both holes and electrons as indicated by band structure calculations. The HEA structure appears stable for annealing in vacuum, while annealing in an oxygen containing atmosphere causes the surface to oxidize and grow a Cr-rich oxide on the surface. This is then accompanied by demixing of the HEA solid solution and a decrease in residual resistance of the film.
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Submitted 21 December, 2021; v1 submitted 18 August, 2021;
originally announced August 2021.
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Elemental distribution and oxygen deficiency of magnetron sputtered ITO films
Authors:
Annett Thøgersen,
Margrethe Rein,
Edouard Monakhov,
Jeyanthinath Mayandi,
Spyros Diplas
Abstract:
The atomic structure and composition of non-interfacial ITO and ITO-Si interfaces were studied with Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). The films were deposited by DC magnetron sputtering on mono-crystalline p-type (100) Si wafers. Both as deposited and heat treated films consisted of crystalline ITO. The ITO/Si interface showed a more complicated com…
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The atomic structure and composition of non-interfacial ITO and ITO-Si interfaces were studied with Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). The films were deposited by DC magnetron sputtering on mono-crystalline p-type (100) Si wafers. Both as deposited and heat treated films consisted of crystalline ITO. The ITO/Si interface showed a more complicated composition. A thin layer of SiO$_x$ was found at the ITO/Si interface together with In and Sn nanoclusters, as well as highly oxygen deficient regions, as observed by XPS. High energy electron exposure of this area crystallized the In nanoclusters and at the same time increased the SiO$_x$ interface layer thickness.
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Submitted 28 September, 2012;
originally announced October 2012.
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Composition and structure of Pd nanoclusters in SiO$_x$ thin film
Authors:
Annett Thøgersen,
Jeyanthinath Mayandi,
Lasse Vines,
Martin F. Sunding,
Arne Olsen,
Spyros Diplas,
Masanori Mitome,
Yoshio Bando
Abstract:
The nucleation, distribution, composition and structure of Pd nanocrystals in SiO$_2$ multilayers containing Ge, Si, and Pd are studied using High Resolution Transmission Electron Microscopy (HRTEM) and X-ray Photoelectron Spectroscopy (XPS), before and after heat treatment. The Pd nanocrystals in the as deposited sample seem to be capped by a layer of PdO$_x$. A 1-2 eV shift in binding energy was…
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The nucleation, distribution, composition and structure of Pd nanocrystals in SiO$_2$ multilayers containing Ge, Si, and Pd are studied using High Resolution Transmission Electron Microscopy (HRTEM) and X-ray Photoelectron Spectroscopy (XPS), before and after heat treatment. The Pd nanocrystals in the as deposited sample seem to be capped by a layer of PdO$_x$. A 1-2 eV shift in binding energy was found for the Pd-3d XPS peak, due to initial state Pd to O charge transfer in this layer. The heat treatment results in a decomposition of PdO and Pd into pure Pd nanocrystals and SiO$_2$.
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Submitted 28 September, 2012;
originally announced October 2012.
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The formation of Er-oxide nanoclusters in SiO$_2$ thin films with excess Si
Authors:
Annett Thøgersen,
Jeyanthinath Mayandi,
Terje Finstad,
Arne Olsen,
Spyros Diplas,
Masanori Mitome,
Yoshio Bando
Abstract:
The nucleation, distribution and composition of erbium embedded in a SiO$_2$-Si layer were studied with High Resolution Transmission Electron Microscopy (HRTEM), Electron Energy Loss Spectroscopy (EELS), Energy Filtered TEM (EFTEM), Scanning Transmission Electron Microscopy (STEM) and X-ray Photoelectron Spectroscopy (XPS). When the SiO$_2$ layer contains small amounts of Si and Er, nanoclusters o…
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The nucleation, distribution and composition of erbium embedded in a SiO$_2$-Si layer were studied with High Resolution Transmission Electron Microscopy (HRTEM), Electron Energy Loss Spectroscopy (EELS), Energy Filtered TEM (EFTEM), Scanning Transmission Electron Microscopy (STEM) and X-ray Photoelectron Spectroscopy (XPS). When the SiO$_2$ layer contains small amounts of Si and Er, nanoclusters of Er-oxide are formed throughout the whole layer. Exposure of the oxide to an electron beam with 1.56*10$^6$ electrons/nm$^2$/sec. causes nanocluster growth. Initially this growth matches the Ostwald ripening model, but eventually it stagnates at a constant nanocluster radius of 2.39 nm.
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Submitted 28 September, 2012;
originally announced October 2012.
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Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers
Authors:
Annett Thøgersen,
Jeyanthinath Mayandi,
Terje G. Finstad,
Arne Olsen,
Jens Sherman Christensen,
Masanori Mitome,
Yoshio Bando
Abstract:
The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm S…
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The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm SiO$_2$ layer made by Rapid Thermal Oxidation (RTO) of silicon. Nanocrystals precipitate when the excess silicon concentration exceeds 50 area %. Below this percentage amorphous silicon nanoclusters were found. In-situ heat treatment of the samples in the TEM showed that the crystallization requires a temperature above 800$^o$C. The nanocrystals precipitate in a 4 nm band, 5 nm from the Si substrate and 4 nm from the SiO$_2$ sample surface. The silicon nucleates where the excess Si concentration is the highest. The top surface has less excess Si due to reaction with oxygen from the ambient during annealing. The SiO$_2$-RTO layer is more Si rich due to Si diffusion from the SiO$_2$-Si layer into RTO. Twinning and stacking faults were found in nanocrystals with 4-10 nm in diameter. These types of defects may have large effects upon the usability of the material in electronic devices. Both single and double twin boundaries have been found in the nanocrystals by high resolution transmission electron microscopy (HRTEM). Image simulations were carried out in order to obtain more information about the defects and nanocrystals. The stacking faults are extrinsic and located in the twin boundaries.
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Submitted 28 September, 2012;
originally announced September 2012.
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An experimental study of charge distribution in crystalline and amorphous Si nanoclusters in thin silica films
Authors:
Annett Thøgersen,
Spyros Diplas,
Jeyanthinath Mayandi,
Terje Finstad,
Arne Olsen,
John F. Watts,
Masanori Mitome,
Yoshio Bando
Abstract:
Crystalline and amorphous nanoparticles of silicon in thin silica layers were examined by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and x-ray photoelectron spectroscopy (XPS). We used XPS data in the form of the Auger parameter to separate initial and final state contributions to the Si$_{2p}$ energy shift. The electrostatic charging and electron screening is…
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Crystalline and amorphous nanoparticles of silicon in thin silica layers were examined by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and x-ray photoelectron spectroscopy (XPS). We used XPS data in the form of the Auger parameter to separate initial and final state contributions to the Si$_{2p}$ energy shift. The electrostatic charging and electron screening issues as well as initial state effects were also addressed. We show that the chemical shift in the nanocrystals is determined by initial state rather than final state effects, and that the electron screening of silicon core holes in nanocrystals dispersed in SiO$_2$ is inferior to that in pure bulk Si.
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Submitted 28 September, 2012;
originally announced September 2012.
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A Comparison between 1.5$μ$m Photoluminescence from Er-Doped Si-Rich Sio2 Films and (Er,Ge) Co-Doped Sio2 Films
Authors:
J. Mayandi,
T. G. Finstad,
C. L. Heng,
Y. J. Li,
A. Thogersen.,
S. Foss,
H. Klette
Abstract:
We have studied the 1.5 $μ$m photoluminescence (PL) from Er ions after annealing two different sample sets in the temperature range 500 °C to 1100 °C. The different sample sets were made by magnetron sputtering from composite targets of Si+SiO2+Er and Ge+SiO2+Er respectively for the different sample sets. The annealing induces Si - and Ge-nanoclusters respectively in the different film s…
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We have studied the 1.5 $μ$m photoluminescence (PL) from Er ions after annealing two different sample sets in the temperature range 500 °C to 1100 °C. The different sample sets were made by magnetron sputtering from composite targets of Si+SiO2+Er and Ge+SiO2+Er respectively for the different sample sets. The annealing induces Si - and Ge-nanoclusters respectively in the different film sets. The PL peak reaches its maximum intensity after annealing at 700 °C for samples with Ge nanoclusters and after annealing at 800 °C for samples with Si. No luminescence from nanoclusters was detected in neither sample sets. This is interpreted as an energy transfer from the nanocluster to Er atoms. Transmission electron microscopy shows that after annealing to the respective temperature yielding the maximum PL intensity both the Ge and Si clusters are non-crystalline. Here we mainly compare the spectral shape of Er luminescence emitted in these different nanostructured matrixes. The PL spectral shapes are clearly different and witness a different local environment for the Er ions.
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Submitted 10 August, 2007;
originally announced August 2007.
