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Configuration of the magnetosome chain: a natural magnetic nanoarchitecture
Authors:
I. Orue,
L. Marcano,
P. Bender,
A. García-Prieto,
S. Valencia,
M. A. Mawass,
D. Gil-Cartón,
D. Alba Venero,
D. Honecker,
A. García-Arribas,
L. Fernández Barquín,
A. Muela,
M. L. Fdez-Gubieda
Abstract:
Magnetospirillum gryphiswaldense is a microorganism with the ability to biomineralize magnetite nanoparticles, called magnetosomes, and arrange them into a chain that behaves like a magnetic compass. Rather than straight lines, magnetosome chains are slightly bent, as evidenced by electron cryotomography. Our experimental and theoretical results suggest that due to the competition between the magn…
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Magnetospirillum gryphiswaldense is a microorganism with the ability to biomineralize magnetite nanoparticles, called magnetosomes, and arrange them into a chain that behaves like a magnetic compass. Rather than straight lines, magnetosome chains are slightly bent, as evidenced by electron cryotomography. Our experimental and theoretical results suggest that due to the competition between the magnetocrystalline and shape anisotropies, the effective magnetic moment of individual magnetosomes is tilted out of the [111] crystallographic easy axis of magnetite. This tilt does not affect the direction of the chain net magnetic moment, which remains along the [111] axis, but explains the arrangement of magnetosomes in helical-like shaped chains. Indeed, we demonstrate that the chain shape can be reproduced by considering an interplay between the magnetic dipolar interactions between magnetosomes, ruled by the orientation of the magnetosome magnetic moment, and a lipid/protein-based mechanism, modeled as an elastic recovery force exerted on the magnetosomes.
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Submitted 9 February, 2024;
originally announced February 2024.
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Domain nucleation across the metal-insulator transition of self-strained V2O3 films
Authors:
Alexandre Pofelski,
Sergio Valencia,
Yoav Kalcheim,
Pavel Salev,
Alberto Rivera,
Chubin Huang,
Mohamad A. Mawass,
Florian Kronast,
Ivan K. Schuller,
Yimei Zhu,
Javier del Valle
Abstract:
Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clamping can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-ori…
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Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clamping can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-oriented V2O3 films grown on sapphire. By combining scanning electron transmission microscopy (STEM) and photoelectron emission microscopy (PEEM), we imaged the MIT with planar and vertical resolution. We observed that upon cooling, insulating domains nucleate at the top of the film, where strain is lowest, and expand downwards and laterally. This growth is arrested at a critical thickness of 50 nm from the substrate interface, leaving a persistent bottom metallic layer. As a result, the MIT cannot take place in the interior of films below this critical thickness. However, PEEM measurements revealed that insulating domains can still form on a very thin superficial layer at the top interface. Our results demonstrate the intricate spatial complexity of the MIT in clamped V2O3, especially the strain-induced large variations along the c-axis. Engineering the thickness-dependent MIT can provide an unconventional way to build out-of-plane geometry devices by using the persistent bottom metal layer as a native electrode.
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Submitted 14 December, 2023;
originally announced December 2023.
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Size-dependence and high temperature stability of radial vortex magnetic textures imprinted by superconductor stray fields
Authors:
D. Sanchez-Manzano,
G. Orfila,
A. Sander,
L. Marcano,
F. Gallego,
M. A. Mawass,
F. Grilli,
A. Arora,
A. Peralta,
F. A. Cuellar,
J. A. Fernandez-Roldan,
N. Reyren,
F. Kronast,
C. Leon,
A. Rivera-Calzada,
J. E. Villegas,
J. Santamaria,
S. Valencia
Abstract:
Swirling spin textures, including topologically non-trivial states, such as skyrmions, chiral domain walls, and magnetic vortices, have garnered significant attention within the scientific community due to their appeal from both fundamental and applied points of view. However, their creation, controlled manipulation, and stability are typically constrained to certain systems with specific crystall…
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Swirling spin textures, including topologically non-trivial states, such as skyrmions, chiral domain walls, and magnetic vortices, have garnered significant attention within the scientific community due to their appeal from both fundamental and applied points of view. However, their creation, controlled manipulation, and stability are typically constrained to certain systems with specific crystallographic symmetries, bulk, or interface interactions, and/or a precise stacking sequence of materials. Here, we make use of the stray field of YBa2Cu3O7-δ superconducting microstructures in ferromagnet/superconductor hybrids to imprint magnetic radial vortices in permalloy at temperatures below the superconducting transition temperature (TC), a method easily extended to other ferromagnets with in-plane magnetic anisotropy. We examine the size dependence and temperature stability of the imprinted magnetic configurations. We show that above TC, magnetic domains retain memory of the imprinted spin texture. Micromagnetic modelling coupled with a SC field model reveals that the stabilization mechanism leading to this memory effect is mediated by microstructural defects. Superconducting control of swirling spin textures below and above the superconducting transition temperature holds promising prospects for shaping spintronics based on magnetic textures.
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Submitted 17 October, 2023;
originally announced October 2023.
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Role of substrate clamping on anisotropy and domain structure in the canted antiferromagnet $α$-Fe$_2$O$_3$
Authors:
Angela Wittmann,
Olena Gomonay,
Kai Litzius,
Allison Kaczmarek,
Alexander E. Kossak,
Daniel Wolf,
Axel Lubk,
Tyler N. Johnson,
Elizaveta A. Tremsina,
Alexandra Churikova,
Felix Büttner,
Sebastian Wintz,
Mohamad-Assaad Mawass,
Markus Weigand,
Florian Kronast,
Larry Scipioni,
Adam Shepard,
Ty Newhouse-Illig,
James A Greer,
Gisela Schütz,
Norman O. Birge,
Geoffrey S. D. Beach
Abstract:
Antiferromagnets have recently been propelled to the forefront of spintronics by their high potential for revolutionizing memory technologies. For this, understanding the formation and driving mechanisms of the domain structure is paramount. In this work, we investigate the domain structure in a thin-film canted antiferromagnet $α$-Fe$_2$O$_3$. We find that the internal destressing fields driving…
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Antiferromagnets have recently been propelled to the forefront of spintronics by their high potential for revolutionizing memory technologies. For this, understanding the formation and driving mechanisms of the domain structure is paramount. In this work, we investigate the domain structure in a thin-film canted antiferromagnet $α$-Fe$_2$O$_3$. We find that the internal destressing fields driving the formation of domains do not follow the crystal symmetry of $α$-Fe$_2$O$_3$, but fluctuate due to substrate clamping. This leads to an overall isotropic distribution of the Néel order with locally varying effective anisotropy in antiferromagnetic thin films. Furthermore, we show that the weak ferromagnetic nature of $α$-Fe$_2$O$_3$ leads to a qualitatively different dependence on magnetic field compared to collinear antiferromagnets such as NiO. The insights gained from our work serve as a foundation for further studies of electrical and optical manipulation of the domain structure of antiferromagnetic thin films.
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Submitted 28 October, 2022;
originally announced October 2022.
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Strain-induced Shape Anisotropy in Antiferromagnetic Structures
Authors:
Hendrik Meer,
Olena Gomonay,
Christin Schmitt,
Rafael Ramos,
Leo Schnitzspan,
Florian Kronast,
Mohamad-Assaad Mawass,
Sergio Valencia,
Eiji Saitoh,
Jairo Sinova,
Lorenzo Baldrati,
Mathias Kläui
Abstract:
We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by…
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We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by modeling the magnetoelastic interactions, considering spontaneous strain induced by the domain configuration, as well as elastic strain due to the substrate and the shape of the patterns. This allows us to demonstrate and explain how the variation of the aspect ratio of rectangular elements can be used to control the antiferromagnetic ground state domain configuration. Shape-dependent strain does not only need to be considered in the design of antiferromagnetic devices, but can potentially be used to tailor their properties, providing an additional handle to control antiferromagnets.
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Submitted 1 September, 2022; v1 submitted 5 May, 2022;
originally announced May 2022.
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Skyrmions in synthetic antiferromagnets and their nucleation via electrical current and ultrafast laser illumination
Authors:
Roméo Juge,
Naveen Sisodia,
Joseba Urrestarazu Larrañaga,
Qiang Zhang,
Van Tuong Pham,
Kumari Gaurav Rana,
Brice Sarpi,
Nicolas Mille,
Stefan Stanescu,
Rachid Belkhou,
Mohamad-Assaad Mawass,
Nina Novakovic-Marinkovic,
Florian Kronast,
Markus Weigand,
Joachim Gräfe,
Sebastian Wintz,
Simone Finizio,
Jörg Raabe,
Lucia Aballe,
Michael Foerster,
Mohamed Belmeguenai,
Liliana Buda-Prejbeanu,
Justin M. Shaw,
Hans T. Nembach,
Laurent Ranno
, et al. (2 additional authors not shown)
Abstract:
Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in…
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Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in tracks. Antiferromagnetic (AF) skyrmions allow these limitations to be lifted owing to their vanishing magnetization and net zero topological charge, promising room-temperature, ultrasmall skyrmions, fast dynamics, and insensitivity to external magnetic fields. While room-temperature AF spin textures have been recently demonstrated, the observation and controlled nucleation of AF skyrmions operable at room temperature in industry-compatible synthetic antiferromagnetic (SAF) material systems is still lacking. Here we demonstrate that isolated skyrmions can be stabilized at zero field and room temperature in a fully compensated SAF. Using X-ray microscopy techniques, we are able to observe the skyrmions in the different SAF layers and demonstrate their antiparallel alignment. The results are substantiated by micromagnetic simulations and analytical models using experimental parameters, which confirm the chiral SAF skyrmion spin texture and allow the identification of the physical mechanisms that control the SAF skyrmion size and stability. We also demonstrate the local nucleation of SAF skyrmions via local current injection as well as ultrafast laser excitations at zero field. These results will enable the utilization of SAF skyrmions in skyrmion-based devices.
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Submitted 23 November, 2021;
originally announced November 2021.
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Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films
Authors:
Christin Schmitt,
Lorenzo Baldrati,
Luis Sanchez-Tejerina,
Felix Schreiber,
Andrew Ross,
Mariia Filianina,
Shilei Ding,
Felix Fuhrmann,
Rafael Ramos,
Francesco Maccherozzi,
Dirk Backes,
Mohamad A. Mawass,
Florian Kronast,
Sergio Valencia,
Eiji Saitoh,
Giovanni Finocchio,
Mathias Kläui
Abstract:
Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel vector direction changes.…
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Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the Néel vector orientation in these domains is along $[\pm5\ \pm5\ 19]$, different compared to the bulk $<11\bar{2}>$ directions. The final state of the Néel vector $\textbf{n}$ switching after current pulses $\textbf{j}$ along the $[1\ \pm1\ 0]$ directions is $\textbf{n}\parallel \textbf{j}$. By comparing the observed Néel vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as $b_{0}+2b_{1}=3*10^7 J\ m^{-3}$ . This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices.
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Submitted 28 February, 2021; v1 submitted 19 August, 2020;
originally announced August 2020.
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Direct imaging of antiferromagnetic domains in Mn$_2$Au manipulated by high magnetic fields
Authors:
A. A. Sapozhnik,
M. Filianina,
S. Yu. Bodnar,
A. Lamirand,
M. Mawass,
Y. Skourski,
H. -J. Elmers,
H. Zabel,
M. Kläui,
M. Jourdan
Abstract:
In the field of antiferromagnetic (AFM) spintronics, information about the Néel vector, AFM domain sizes, and spin-flop fields is a prerequisite for device applications but is not available easily. We have investigated AFM domains and spin-flop induced changes of domain patterns in Mn2Au(001) epitaxial thin films by X-ray magnetic linear dichroism photoemission electron microscopy (XMLD-PEEM) usin…
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In the field of antiferromagnetic (AFM) spintronics, information about the Néel vector, AFM domain sizes, and spin-flop fields is a prerequisite for device applications but is not available easily. We have investigated AFM domains and spin-flop induced changes of domain patterns in Mn2Au(001) epitaxial thin films by X-ray magnetic linear dichroism photoemission electron microscopy (XMLD-PEEM) using magnetic fields up to 70 T. As-prepared Mn$_2$Au films exhibit AFM domains with an average size $\sim$ 1 $μ$m. Application of a 30T field, exceeding the spin-flop field, along a magnetocrystalline easy axis, dramatically increases the AFM domain size with Néel vectors perpendicular to the applied field direction. The width of Néel type domain walls (DW) is below the spatial resolution of the PEEM and therefore can only be estimated from an analysis of the DW profile to be smaller than 80 nm. Furthermore, using the values for the DW width and the spin-flop field, we evaluate an in-plane anisotropy constant ranging between 1 and 17 $μ$eV/f.u.
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Submitted 8 March, 2018;
originally announced March 2018.
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Time-resolved imaging of pulse-induced magnetization reversal with a microwave assist field
Authors:
Siddharth Rao,
Jan Rhensius,
Andre Bisig,
Mohamad-Assaad Mawass,
Markus Weigand,
Mathias Klaui,
Charanjit S. Bhatia,
Hyunsoo Yang
Abstract:
The reversal of the magnetization under the influence of a field pulse has been previously predicted to be an incoherent process with several competing phenomena such as domain wall relaxation, spin wave-mediated instability regions, and vortex-core mediated reversal dynamics. However, there has been no study on the direct observation of the switching process with the aid of a microwave signal inp…
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The reversal of the magnetization under the influence of a field pulse has been previously predicted to be an incoherent process with several competing phenomena such as domain wall relaxation, spin wave-mediated instability regions, and vortex-core mediated reversal dynamics. However, there has been no study on the direct observation of the switching process with the aid of a microwave signal input. We report a time-resolved imaging study of magnetization reversal in patterned magnetic structures under the influence of a field pulse with microwave assistance. The microwave frequency is varied to demonstrate the effect of resonant microwave-assisted switching. We observe that the switching process is dominated by spin wave dynamics generated as a result of magnetic instabilities in the structures, and identify the frequencies that are most dominant in magnetization reversal.
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Submitted 29 May, 2015;
originally announced May 2015.
