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The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs
Authors:
Nikolaos Vasileiadis,
Alexandros Mavropoulis,
Christoforos Theodorou,
Panagiotis Dimitrakis
Abstract:
This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study successfully attains four distinct and stable resistance states. To gain deeper insights, a Low-Frequency Noise (LFN) statistical analysis is conducted to investigate the role of a tunneling oxide between the bottom elec…
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This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study successfully attains four distinct and stable resistance states. To gain deeper insights, a Low-Frequency Noise (LFN) statistical analysis is conducted to investigate the role of a tunneling oxide between the bottom electrode and SiNx at various resistance levels. The findings from the LFN measurements strongly suggest that the multilevel high resistance switching primarily arises from variations in the number of nitrogen vacancies, which in turn modulate the conductivity of conductive filaments (CF). Notably, this modulation does not compromise the quality of the filament's surrounding interface. This research sheds light on the underlying mechanisms of RRAM cells and their potential for advanced memory applications.
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Submitted 6 February, 2025;
originally announced February 2025.
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Silicon nitride resistance switching MIS cells doped with silicon atoms
Authors:
A Mavropoulis,
N Vasileiadis,
C Bonafos,
P Normand,
V Ioannou-Sougleridis,
G Ch Sirakoulis,
P Dimitrakis
Abstract:
Stoichiometric SiNx layers (x = [N]/[Si] = 1.33) are doped with Si atoms by ultra-low energy ion implantation (ULE-II) and subsequently annealed at different temperatures in inert ambient conditions. Detailed material and memory cells characterization is performed to investigate the effect of Si dopants on the switching properties and performance of the fabricated resistive memory cells. In this c…
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Stoichiometric SiNx layers (x = [N]/[Si] = 1.33) are doped with Si atoms by ultra-low energy ion implantation (ULE-II) and subsequently annealed at different temperatures in inert ambient conditions. Detailed material and memory cells characterization is performed to investigate the effect of Si dopants on the switching properties and performance of the fabricated resistive memory cells. In this context extensive dc current-voltage and impedance spectroscopy measurements are carried out systematically and the role of doping in dielectric properties of the nitride films is enlightened. The dc and ac conduction mechanisms are investigated in a comprehensive way. Room temperature retention characteristics of resistive states are also presented.
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Submitted 4 February, 2025;
originally announced February 2025.
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Effect of Silicon Atom Doping in SiNx Resistive Switching Films
Authors:
A Mavropoulis,
N Vasileiadis,
C Bonafos,
P Normand,
V Ioannou-Sougleridis,
G Ch Sirakoulis,
P Dimitrakis
Abstract:
Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impact the switching characteristics. Electrical characterization and dielectric breakdown measurements are used to identify the main switching properties and performance of the fabricated devices and the effect that the Si d…
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Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impact the switching characteristics. Electrical characterization and dielectric breakdown measurements are used to identify the main switching properties and performance of the fabricated devices and the effect that the Si dopants and annealing temperature have. In addition, impedance spectroscopy measurements revealed the dielectric properties of the silicon nitride films, as well as the ac conductance, which is utilized to identify the conduction mechanisms.
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Submitted 3 February, 2025;
originally announced February 2025.
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Effect of Al2O3 on the operation of SiNX-based MIS RRAMs
Authors:
A. E. Mavropoulis,
N. Vasileiadis,
P. Normand,
C. Theodorou,
G. Ch. Sirakoulis,
S. Kim,
P. Dimitrakis
Abstract:
The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.
The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.
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Submitted 3 February, 2025;
originally announced February 2025.
