Showing 1–1 of 1 results for author: Matsumura, R

Tuning of metal-insulator transition of two-dimensional electrons at parylene/SrTiO$_3$ interface by electric field

Authors: H. Nakamura, H. Tomita, H. Akimoto, R. Matsumura, I. H. Inoue, T. Hasegawa, K. Kono, Y. Tokura, H. Takagi

Abstract: Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number… ▽ More Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number of devices doped far beyond the IMT, which may imply the presence of 2D metal-superconductor transition. This realization of a two-dimensional metallic state on the most widely-used perovskite oxide is the best manifestation of the potential of oxide electronics. △ Less

Submitted 27 September, 2008; originally announced September 2008.

Journal ref: J. Phys. Soc. Jpn. 78, 083713 (2009)