Showing 1–1 of 1 results for author: Matsumura, R
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Tuning of metal-insulator transition of two-dimensional electrons at parylene/SrTiO$_3$ interface by electric field
Authors:
H. Nakamura,
H. Tomita,
H. Akimoto,
R. Matsumura,
I. H. Inoue,
T. Hasegawa,
K. Kono,
Y. Tokura,
H. Takagi
Abstract:
Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number…
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Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number of devices doped far beyond the IMT, which may imply the presence of 2D metal-superconductor transition. This realization of a two-dimensional metallic state on the most widely-used perovskite oxide is the best manifestation of the potential of oxide electronics.
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Submitted 27 September, 2008;
originally announced September 2008.