-
Imaging Ultrafast Dynamical Diffraction wavefronts of femtosecond laser-induced lattice distortions inside crystalline semiconductors
Authors:
Angel Rodríguez-Fernández,
Jan-Etienne Pudell,
Roman Shayduk,
Wonhyuk Jo,
James Wrigley,
Johannes Möller,
Peter Zalden,
Alexey Zozulya,
Jörg Hallmann,
Anders Madsen,
Pablo Villanueva-Perez,
Zdenek Matej,
Thies J. Albert,
Dominik Kaczmarek,
Klaus Sokolowski-Tinten,
Antonowicz Jerzy,
Ryszard Sobierajski,
Rahimi Mosafer,
Oleksii I. Liubchenko,
Javier Solis,
Jan Siegel
Abstract:
Material processing with femtosecond lasers has attracted enormous attention because of its potential for technology and industry applications. In parallel, time-resolved x-ray diffraction has been successfully used to study ultrafast structural distortion dynamics in semiconductor thin films. Gracing incident x-ray geometry has been also used to look to distortion dynamics, but this technique is…
▽ More
Material processing with femtosecond lasers has attracted enormous attention because of its potential for technology and industry applications. In parallel, time-resolved x-ray diffraction has been successfully used to study ultrafast structural distortion dynamics in semiconductor thin films. Gracing incident x-ray geometry has been also used to look to distortion dynamics, but this technique is only sensitive to the surface of bulk materials with a limited temporal resolution. However, 'real-world' processing applications deal mostly with bulk materials, which prevent the use of such techniques. For processing applications, a fast and depth-sensitive probe is needed. To address this, we present a novel technique based on ultrafast dynamical diffraction (UDD) capable of imaging transient strain distributions inside bulk crystals upon single-pulse excitation. This pump-probe technique provides a complete picture of the temporal evolution of ultrafast distortion depth profiles. Our measurements were obtained in a thin crystalline Si wafer upon single pulse femtosecond optical excitation revealing that even below the melting threshold strong lattice distortions appear on ps time scales due to the formation and propagation of high-amplitude strain waves into the bulk.
△ Less
Submitted 3 April, 2025; v1 submitted 13 March, 2025;
originally announced March 2025.
-
Powder diffraction in Bragg-Brentano geometry with straight linear detectors
Authors:
Dominik Kriegner,
Zdenek Matej,
Radomir Kuzel,
Vaclav Holy
Abstract:
A common way of speeding up powder diffraction measurements is the use of one or two dimensional detectors. This usually goes along with worse resolution and asymmetric peak profiles. In this work the influence of a straight linear detector on the resolution function in the Bragg-Brentano focusing geometry is discussed. Due to the straight nature of most modern detectors geometrical defocusing occ…
▽ More
A common way of speeding up powder diffraction measurements is the use of one or two dimensional detectors. This usually goes along with worse resolution and asymmetric peak profiles. In this work the influence of a straight linear detector on the resolution function in the Bragg-Brentano focusing geometry is discussed. Due to the straight nature of most modern detectors geometrical defocusing occurs which heavily influences the line shape of diffraction lines at low angles. An easy approach to limit the resolution degrading effects is presented. The presented algorithm selects an adaptive range of channels of the linear detector at low angles, resulting in increased resolution. At higher angles still the whole linear detector is used and the data collection remains fast. Using this algorithm a well-behaved resolution function is obtained in the full angular range, whereas using the full linear detector the resolution function varies within one pattern which hinders line shape and Rietveld analysis.
△ Less
Submitted 26 February, 2015; v1 submitted 20 January, 2015;
originally announced January 2015.
-
K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As
Authors:
N. A. Goncharuk,
L. Smrcka,
J. Kucera,
K. Olejnik,
V. Novak,
Z. Matej,
L. Nichtova,
V. Holy
Abstract:
This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW including the core-hole effect, a special attention has been paid to consequences of coexistence of Mn impurities in substitutional and tetrahedral interstitial…
▽ More
This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW including the core-hole effect, a special attention has been paid to consequences of coexistence of Mn impurities in substitutional and tetrahedral interstitial positions. We have performed quantitative component analysis of experimental spectra collected on the (Ga,Mn)As samples before/after annealing and etching, with the aim to determine the proportion of Mn impurity configurations. Comparison of the experimental data with theoretical computations indicates that even after annealing and etching some Mn atoms still reside in interstitial sites, although the concentration of interstitial defects has been reduced by annealing.
△ Less
Submitted 23 March, 2010; v1 submitted 7 May, 2008;
originally announced May 2008.
-
Controlled aggregation of magnetic ions in a semiconductor. Experimental demonstration
Authors:
A. Bonanni,
A. Navarro-Quezada,
Tian Li,
M. Wegscheider,
Z. Matej,
V. Holy,
R. T. Lechner,
G. Bauer,
M. Kiecana,
M. Sawicki,
T. Dietl
Abstract:
The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at the nanoscale, we give experimental evidence that the aggregation of Fe ions in (Ga,Fe)N and consequently the magnetic response of the material are affected by growth rate and co-doping with shallow impurities.
The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at the nanoscale, we give experimental evidence that the aggregation of Fe ions in (Ga,Fe)N and consequently the magnetic response of the material are affected by growth rate and co-doping with shallow impurities.
△ Less
Submitted 21 April, 2008;
originally announced April 2008.
-
Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence
Authors:
V. Holy,
Z. Matej,
O. Pacherova,
V. Novak,
M. Cukr,
K. Olejnik,
T. Jungwirth
Abstract:
A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concent…
▽ More
A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concentration due to Mn atoms at random non-crystallographic positions. In the epilayer, Mn incorporated at interstitial position has a dominant effect on lattice expansion as compared to substitutional Mn. The expansion coeffcient of interstitial Mn estimated from our data is consistent with theory predictions. The concentration of interstitial Mn and the corresponding lattice expansion of the epilayer are reduced by annealing, accompanied by an increase of the density of randomly distributed Mn atoms in the disordered surface layer. Substitutional Mn atoms remain stable during the low-temperature annealing.
△ Less
Submitted 7 September, 2006;
originally announced September 2006.
