Showing 1–31 of 31 results for author: Martínez, B

A foundry-fabricated spin qubit unit cell with in-situ dispersive readout

Authors: Pierre Hamonic, Mathieu Toubeix, Guillermo Haas, Jayshankar Nath, Matthieu C. Dartiailh, Biel Martinez, Benoit Bertrand, Heimanu Niebojewski, Maud Vinet, Christopher Bäuerle, Franck Balestro, Tristan Meunier, Matias Urdampilleta

Abstract: Spin qubits based on semiconductor quantum dots are a promising prospect for quantum computation because of their high coherence times and gate fidelities. However, scaling up those structures to the numbers required by fault-tolerant quantum computing is currently hampered by a number of issues. One of the main issues is the need for single-shot low-footprint qubit readout. Here, we demonstrate t… ▽ More Spin qubits based on semiconductor quantum dots are a promising prospect for quantum computation because of their high coherence times and gate fidelities. However, scaling up those structures to the numbers required by fault-tolerant quantum computing is currently hampered by a number of issues. One of the main issues is the need for single-shot low-footprint qubit readout. Here, we demonstrate the single-shot in situ measurement of a compact qubit unit-cell. The unit cell is composed of two electron spins with a controllable exchange interaction. We report initialization, single-shot readout and two-electron entangling gate. The unit cell was successfully operated at up to 1 K, with state-of-the-art charge noise levels extracted using free induction decay. With its integrated readout and high stability, this foundry fabricated qubit unit cell demonstrates strong potential for scalable quantum computing architectures. △ Less

Submitted 29 April, 2025; originally announced April 2025.

Comments: 18 pages, 7 figures

Compact frequency multiplexed readout of silicon quantum dots in monolithic FDSOI 28nm technology

Authors: Quentin Schmidt, Baptiste Jadot, Brian Martinez, Thomas Houriez, Adrien Morel, Tristan Meunier, Gaël Pillonnet, Gérard Billiot, Aloysius Jansen, Xavier Jehl, Yvain Thonnart, Franck Badets

Abstract: This paper demonstrates the first on-chip frequency multiplexed readout of two co-integrated single-electron transistors without the need for bulky resonators. We characterize single electron dynamics in both single electron transistors at 4.2K before validating their simultaneous readout within 2.2μs, achieving a 99.9% fidelity with a 1MHz frequency spacing. This experimental demonstration paves… ▽ More This paper demonstrates the first on-chip frequency multiplexed readout of two co-integrated single-electron transistors without the need for bulky resonators. We characterize single electron dynamics in both single electron transistors at 4.2K before validating their simultaneous readout within 2.2μs, achieving a 99.9% fidelity with a 1MHz frequency spacing. This experimental demonstration paves the way towards resonator-free large-scale quantum-classical architectures that would be required for future universal and reprogrammable quantum computers. △ Less

Submitted 29 October, 2024; originally announced October 2024.

Highly Transparent Lead-Free Piezoelectric Haptic Device

Authors: Longfei Song, Sebastjan Glinsek, Nagamalleswara Rao Alluri, Veronika Kovacova, Michele Melchiorr, Alfredo Blazquez Martinez, Barnik Mandal, Juliette Cardoletti, Emmanuel Defay

Abstract: Acoustic haptic technology adds touch sensations to human-machine interfaces by integrating piezoelectric actuators onto touchscreens. Traditional piezoelectric haptic technologies use opaque lead-containing ceramics that are both toxic and visible. We have developed a highly transparent lead-free piezoelectric haptic device using potassium sodium niobate (KNN) and transparent conductive oxide thi… ▽ More Acoustic haptic technology adds touch sensations to human-machine interfaces by integrating piezoelectric actuators onto touchscreens. Traditional piezoelectric haptic technologies use opaque lead-containing ceramics that are both toxic and visible. We have developed a highly transparent lead-free piezoelectric haptic device using potassium sodium niobate (KNN) and transparent conductive oxide thin films. The KNN film, grown on glass, exhibits a pure perovskite phase and a dense microstructure. This device achieves up to 80% transmittance, surpassing lead zirconate titanate (PZT) thin films. It generates an acoustic resonance at 16.5 kHz and produces a peak-to-peak displacement of 1.0 um at 28 V unipolar, making it suitable for surface rendering applications. This demonstrates the potential of transparent lead-free piezoelectric actuators as an effective alternative to conventional PZT haptic actuators. △ Less

Submitted 13 May, 2025; v1 submitted 21 October, 2024; originally announced October 2024.

Combining multiplexed gate-based readout and isolated CMOS quantum dot arrays

Authors: Pierre Hamonic, Martin Nurizzo, Jayshankar Nath, Matthieu C. Dartiailh, Victor El-Homsy, Mathis Fragnol, Biel Martinez, Pierre-Louis Julliard, Bruna Cardoso Paz, Mathilde Ouvrier-Buffet, Jean-Baptiste Filippini, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Franck Balestro, Tristan Meunier, Matias Urdampilleta

Abstract: Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the limited sensitivity of large-footprint charge sensors, achieving single-spin occupancy in each dot in a growing quantum dot array is exceedingly complex. Therefore,… ▽ More Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the limited sensitivity of large-footprint charge sensors, achieving single-spin occupancy in each dot in a growing quantum dot array is exceedingly complex. Therefore, to scale-up a spin-based architecture we must change how individual charges are readout and controlled. Here, we demonstrate single-spin occupancy of each dot in a foundry-fabricated array by combining two methods. 1/ Loading a finite number of electrons into the quantum dot array; simplifying electrostatic tuning by isolating the array from the reservoirs. 2/ Deploying multiplex gate-based reflectometry to dispersively probe charge tunneling and spin states without charge sensors or reservoirs. Our isolated arrays probed by embedded multiplex readout can be readily electrostatically tuned. They are thus a viable, scalable approach for spin-based quantum architectures. △ Less

Submitted 3 October, 2024; originally announced October 2024.

Comments: 15 pages 5 figures

Giant Strain Tunability in Polycrystalline Ceramic Films via Helium Implantation

Authors: A. Blàzquez Martínez, S. Glinšek, T. Granzow, J. -N. Audinot, P. Fertey, J. Kreisel, M. Guennou, C. Toulouse

Abstract: Strain engineering is a powerful tool routinely used to control and enhance properties such as ferroelectricity, magnetic ordering, or metal-insulator transitions. Epitaxial strain in thin films allows manipulation of in-plane lattice parameters, achieving strain values generally up to 4%, and above in some specific cases. In polycrystalline films, which are more suitable for functional applicatio… ▽ More Strain engineering is a powerful tool routinely used to control and enhance properties such as ferroelectricity, magnetic ordering, or metal-insulator transitions. Epitaxial strain in thin films allows manipulation of in-plane lattice parameters, achieving strain values generally up to 4%, and above in some specific cases. In polycrystalline films, which are more suitable for functional applications due to their lower fabrication costs, strains above 1% often cause cracking. This poses challenges for functional property tuning by strain engineering. Helium implantation has been shown to induce negative pressure through interstitial implantation, which increases the unit cell volume and allows for continuous strain tuning with the implanted dose in epitaxial monocrystalline films. However, there have been no studies on the transferability of helium implantation as a strain-engineering technique to polycrystalline films. Here, we demonstrate the technique's applicability for strain engineering beyond epitaxial monocrystalline samples. Helium implantation can trigger an unprecedented lattice parameter expansion of up to 3.2% in polycrystalline BiFeO3 films without causing structural cracks. The film maintains stable ferroelectric properties with doses up to 1E15 He/cm2. This finding underscores the potential of helium implantation in strain engineering polycrystalline materials, enabling cost-effective and versatile applications. △ Less

Submitted 23 January, 2025; v1 submitted 20 September, 2024; originally announced September 2024.

Comments: 9 pages, 4 Figures, supporting information available

Journal ref: APL Mater. 13, 021111 (2025)

Strain engineering in Ge/GeSi spin qubits heterostructures

Authors: Lorenzo Mauro, Esteban A. Rodríguez-Mena, Biel Martinez, Yann-Michel Niquet

Abstract: The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic response with in-plane $g$-factors $g_{x,y}^*\lesssim 0.3$ and out-of-plane $g$-factor $g_z^*\gtrsim 10$. As a consequence, Rabi hot spots and dephasing sweet lines are extremely sharp and call for a careful alignment of the magnetic field in Ge spin qubit devices. We investigate how the $g$-factors can be engineered… ▽ More The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic response with in-plane $g$-factors $g_{x,y}^*\lesssim 0.3$ and out-of-plane $g$-factor $g_z^*\gtrsim 10$. As a consequence, Rabi hot spots and dephasing sweet lines are extremely sharp and call for a careful alignment of the magnetic field in Ge spin qubit devices. We investigate how the $g$-factors can be engineered by strains. We show that uniaxial strains can raise in-plane $g$-factors above unity while leaving $g_z^*$ essentially constant. We discuss how the etching of an elongated mesa in a strained buffer can actually induce uniaxial (but inhomogeneous) strains in the heterostructure. This broadens the operational magnetic field range and enables spin manipulation by shuttling holes between neighboring dots with different $g$-factors. △ Less

Submitted 25 February, 2025; v1 submitted 29 July, 2024; originally announced July 2024.

Comments: 13 pages, 16 figures

Mitigating variability in epitaxial-heterostructure-based spin-qubit devices by optimizing gate layout

Authors: Biel Martinez, Silvano de Franceschi, Yann-Michel Niquet

Abstract: The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which leads to variations in their charge and spin properties. Charge disorder in the amorphous oxides is particularly detrimental owing to its long-range influence. Here we analyze the effects of charge traps at the semicond… ▽ More The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which leads to variations in their charge and spin properties. Charge disorder in the amorphous oxides is particularly detrimental owing to its long-range influence. Here we analyze the effects of charge traps at the semiconductor/oxide interface, which are generally believed to play a dominant role in variability. We consider multiple random distributions of these interface traps and numerically calculate their impact on the chemical potentials, detuning and tunnel coupling of two adjacent quantum dots in SiGe heterostructure. Our results highlight the beneficial screening effect of the metal gates. The surface of the heterostructure shall, therefore, be covered as much as possible by the gates in order to limit variability. We propose an alternative layout with tip-shaped gates that maximizes the coverage of the semiconductor/oxide interface and outperforms the usual planar layout in some regimes. This highlights the importance of design in the management of device-to-device variability. △ Less

Submitted 6 August, 2024; v1 submitted 29 February, 2024; originally announced February 2024.

Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits

Authors: Esteban A. Rodríguez-Mena, José Carlos Abadillo-Uriel, Gaëtan Veste, Biel Martinez, Jing Li, Benoît Sklénard, Yann-Michel Niquet

Abstract: We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a linear Dresselhaus-type interaction for heavy-holes. This interaction results from the heavy-hole/light-hole mixings induced by the interfaces and can be captured… ▽ More We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a linear Dresselhaus-type interaction for heavy-holes. This interaction results from the heavy-hole/light-hole mixings induced by the interfaces and can be captured by a suitable correction to the minimal Luttinger-Kohn, four bands $\vec{k}\cdot\vec{p}$ Hamiltonian. It is dependent on the steepness of the Ge/GeSi interfaces, and is suppressed if interdiffusion is strong enough. Besides the Dresselhaus interaction, the Ge/GeSi interfaces also make a contribution to the in-plane gyromagnetic $g$-factors of the holes. The tight-binding calculations also highlight the existence of a small linear Rashba interaction resulting from the couplings between the heavy-hole/light-hole manifold and the conduction band enabled by the low structural symmetry of Ge/GeSi heterostructures. These interactions can be leveraged to drive the hole spin. The linear Dresselhaus interaction may, in particular, dominate the physics of the devices for out-of-plane magnetic fields. When the magnetic field lies in-plane, it is, however, usually far less efficient than the $g$-tensor modulation mechanisms arising from the motion of the dot in non-separable, inhomogeneous electric fields and strains. △ Less

Submitted 15 December, 2023; v1 submitted 19 July, 2023; originally announced July 2023.

Comments: 19 pages, 16 figs

Journal ref: Phys. Rev. B 108, 205416 (2023)

Crystallization of piezoceramic films on glass via flash lamp annealing

Authors: Longfei Song, Juliette Cardoletti, Alfredo Blazquez Martinez, Andreja Bencan, Brigita Kmet, Stephanie Girod, Emmanuel Defay, Sebastjan Glinsek

Abstract: Integration of thin-film oxide piezoelectrics on glass is imperative for the next generation of transparent electronics to attain sensing and actuating functions. However, their crystallization temperature (above 650 °C) is incompatible with most glasses. We developed a flash lamp process for growth of piezoelectric lead zirconate titanate films. The process enables crystallization on various type… ▽ More Integration of thin-film oxide piezoelectrics on glass is imperative for the next generation of transparent electronics to attain sensing and actuating functions. However, their crystallization temperature (above 650 °C) is incompatible with most glasses. We developed a flash lamp process for growth of piezoelectric lead zirconate titanate films. The process enables crystallization on various types of glasses in a few seconds only. Functional properties of these films are comparable to the films processed with standard rapid thermal annealing at 700 °C. A surface haptic device was fabricated with a 1 $\unicode{x00B5}$m-thick film (piezoelectric e$_{33,f}$ of -5 C m$^{-2}$). Its ultrasonic surface deflection reached 1.5 $\unicode{x00B5}$m at 60 V, sufficient for its use in surface rendering applications. This flash lamp annealing process is compatible with large glass sheets and roll-to-roll processing and has the potential to significantly expand the applications of piezoelectric devices on glass. △ Less

Submitted 29 February, 2024; v1 submitted 23 March, 2023; originally announced March 2023.

Comments: 53 pages, 18 figures

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

Authors: Bernhard Klemt, Victor El-Homsy, Martin Nurizzo, Pierre Hamonic, Biel Martinez, Bruna Cardoso Paz, Cameron spence, Matthieu Dartiailh, Baptiste Jadot, Emmanuel Chanrion, Vivien Thiney, Renan Lethiecq, Benoit Bertrand, Heimanu Niebojewski, Christopher Bäuerle, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta

Abstract: For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting… ▽ More For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proof of concepts. Once the process is established it can be incorporated in the foundry-compatible process flow. Here, we study a single electron spin qubit in a CMOS device with a micromagnet integrated in the flexible BEOL. We exploit the synthetic spin orbit coupling (SOC) to control the qubit via electric field and we investigate the spin-valley physics in the presence of SOC where we show an enhancement of the Rabi frequency at the spin-valley hotspot. Finally, we probe the high frequency noise in the system using dynamical decoupling pulse sequences and demonstrate that charge noise dominates the qubit decoherence in this range. △ Less

Submitted 8 March, 2023; originally announced March 2023.

Comments: 11 pages, 10 figures

Hole spin driving by strain-induced spin-orbit interactions

Authors: José Carlos Abadillo-Uriel, Esteban A. Rodríguez-Mena, Biel Martinez, Yann-Michel Niquet

Abstract: Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain fields gives rise to linear Rashba spin-orbit interactions (with spatially dependent spin-orbit lengths) and g-factor modulations that allow for fast Rabi oscill… ▽ More Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain fields gives rise to linear Rashba spin-orbit interactions (with spatially dependent spin-orbit lengths) and g-factor modulations that allow for fast Rabi oscillations. Such inhomogeneous strains may build up spontaneously due to process and cool down stress. We discuss spin qubits in Ge/GeSi heterostructures as an illustration. We highlight that Rabi frequencies can be enhanced by one order of magnitude by shear strain gradients as small as $3\times 10^{-6}$ nm$^{-1}$ within the dots. This underlines that spin in solids can be very sensitive to strains and opens the way for strain engineering in hole spin devices for quantum information and spintronics. △ Less

Submitted 1 September, 2023; v1 submitted 7 December, 2022; originally announced December 2022.

Comments: 19 pages, 3 figures

Journal ref: Physical Review Letters 131, 097002 (2023)

Hole spin manipulation in inhomogeneous and non-separable electric fields

Authors: Biel Martinez, José Carlos Abadillo-Uriel, Esteban A. Rodríguez-Mena, Yann-Michel Niquet

Abstract: The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field induced by the gates in quantum dot devices is not fully separable and displays significant inhomogeneities. Here, we address the electrical manipulation of hole spi… ▽ More The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field induced by the gates in quantum dot devices is not fully separable and displays significant inhomogeneities. Here, we address the electrical manipulation of hole spins in semiconductor heterostructures subject to inhomogeneous vertical electric fields and/or in-plane AC electric fields. We consider Ge quantum dots electrically confined in a Ge/GeSi quantum well as an illustration. We show that the lack of separability between the vertical and in-plane motions gives rise to an additional spin-orbit coupling mechanism (beyond the usual linear and cubic in momentum Rashba terms) that modulates the principal axes of the hole gyromagnetic g-matrix. This non-separability mechanism can be of the same order of magnitude as Rashba-type interactions, and enables spin manipulation when the magnetic field is applied in the plane of the heterostructure even if the dot is symmetric (disk-shaped). More generally, we show that Rabi oscillations in strongly patterned electric fields harness a variety of g-factor modulations. We discuss the implications for the design, modeling and understanding of hole spin qubit devices. △ Less

Submitted 28 December, 2022; v1 submitted 21 September, 2022; originally announced September 2022.

Journal ref: Physical Review B 106, 235426 (2022)

Birefringence induced by antiferroelectric switching in transparent polycrystalline $PbZr_{0.95}Ti_{0.05}O_{3}$ film

Authors: Pranab Parimal Biswas, Cosme Milesi-Brault, Alfredo Blázquez Martínez, Naveen Aruchamy, Longfei Song, Veronika Kovacova, Sebastjan Glinsek, Torsten Granzow, Emmanuel Defay, Mael Guennou

Abstract: The most characteristic functional property of antiferroelectric materials is the possibility to induce a phase transition from a non-polar to a polar phase by an electric field. Here, we investigate the effect of this field-induced phase transition on the birefringence change of $PbZr_{0.95}Ti_{0.05}O_{3}$. We use a transparent polycrystalline $PbZr_{0.95}Ti_{0.05}O_{3}$ film grown on… ▽ More The most characteristic functional property of antiferroelectric materials is the possibility to induce a phase transition from a non-polar to a polar phase by an electric field. Here, we investigate the effect of this field-induced phase transition on the birefringence change of $PbZr_{0.95}Ti_{0.05}O_{3}$. We use a transparent polycrystalline $PbZr_{0.95}Ti_{0.05}O_{3}$ film grown on $PbTiO_{3}/HfO_{2}/SiO_{2}$ with interdigitated electrodes to directly investigate changes in birefringence in a simple transmission geometry. In spite of the polycrystalline nature of the film and its moderate thickness, the field-induced transition produces a sizeable effect observable under a polarized microscope. The film in its polar phase is found to behave like a homogeneous birefringent medium. The time evolution of this field-induced birefringence provides information about irreversibilities in the antiferroelectric switching process and its slow dynamics. The change in birefringence has two main contributions, one that responds briskly (~ 0.5 s), and a slower one that rises and saturates over a period of as long as 30 minutes. Possible origins for this long saturation and relaxation times are discussed. △ Less

Submitted 3 August, 2022; originally announced August 2022.

Comments: 15 pages, 5 figures

Journal ref: Phys. Rev. Materials 6, L091403 (2022)

Two-body Wigner molecularization in asymmetric quantum dot spin qubits

Authors: José C. Abadillo-Uriel, Biel Martinez, Michele Filippone, Yann-Michel Niquet

Abstract: Coulomb interactions strongly influence the spectrum and the wave functions of few electrons or holes confined in a quantum dot. In particular, when the confinement potential is not too strong, the Coulomb repulsion triggers the formation of a correlated state, the Wigner molecule, where the particles tend to split apart. We show that the anisotropy of the confinement potential strongly enhances t… ▽ More Coulomb interactions strongly influence the spectrum and the wave functions of few electrons or holes confined in a quantum dot. In particular, when the confinement potential is not too strong, the Coulomb repulsion triggers the formation of a correlated state, the Wigner molecule, where the particles tend to split apart. We show that the anisotropy of the confinement potential strongly enhances the molecularization process and affects the performances of quantum-dot systems used as spin qubits. Relying on analytical and numerical solutions of the two-particle problem -- both in a simplified single-band approximation and in realistic setups -- we highlight the exponential suppression of the singlet-triplet gap with increasing anisotropy. We compare the molecularization effects in different semiconductor materials and discuss how they specifically hamper Pauli spin blockade readout and reduce the exchange interactions in two-qubit gates. △ Less

Submitted 19 November, 2021; v1 submitted 23 July, 2021; originally announced July 2021.

Comments: 12 pages and 8 figures in the main text + 5 pages of appendices

Journal ref: Phys. Rev. B 104, 195305 (2021)

Variability of electron and hole spin qubits due to interface roughness and charge traps

Authors: Biel Martinez, Yann-Michel Niquet

Abstract: Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions, hence the spin properties. It is, therefore, important to understand how reproducible the qubits can be, in order to assess strategies to cope with variability,… ▽ More Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions, hence the spin properties. It is, therefore, important to understand how reproducible the qubits can be, in order to assess strategies to cope with variability, and to set constraints on the quality of materials and fabrication. Here we model the variability of single qubit properties (Larmor and Rabi frequencies) due to disorder at the Si/SiO$_2$ interface (roughness, charge traps) in metal-oxide-semiconductor devices. We consider both electron qubits (with synthetic spin-orbit coupling fields created by micro-magnets) and hole qubits (with intrinsic spin-orbit coupling). We show that charge traps are much more limiting than interface roughness, and can scatter Rabi frequencies over one order of magnitude. We discuss the implications for the design of spin qubits and for the choice of materials. △ Less

Submitted 22 October, 2021; v1 submitted 22 July, 2021; originally announced July 2021.

Comments: 23 pages

Journal ref: Physical Review Applied 17, 024022 (2022)

Self-assembled line network in BiFeO3 thin films

Authors: B. Colson, V. Fuentes, Z. Konstantinovic, D. Colson, A. Forget, N. Lazarevic, M. Scepanovic, Z. V. Popovic, C. Frontera, Ll. Balcells, B. Martinez, A. Pomar

Abstract: In this work we report on the controlled fabrication of a self-assembled line network in highly epitaxial BiFeO3 thin films on top of LaAlO3 in the kinetically limited grown region by RF sputtering. As previously shown in the case of manganite thin films, the remarkable degree of ordering is achieved using vicinal substrates with well-defined step-terrace morphology. Nanostructured BiFeO3 thin fil… ▽ More In this work we report on the controlled fabrication of a self-assembled line network in highly epitaxial BiFeO3 thin films on top of LaAlO3 in the kinetically limited grown region by RF sputtering. As previously shown in the case of manganite thin films, the remarkable degree of ordering is achieved using vicinal substrates with well-defined step-terrace morphology. Nanostructured BiFeO3 thin films show mixed-phase morphology. Besides typical formation following (100) and (010) axes, some mixed phase nanodomains are detected also in-between the regular line network. These particular microstructures open a playground for future applications in multiferroic nanomaterials. △ Less

Submitted 21 April, 2020; originally announced April 2020.

Journal ref: Journal of Magnetism and Magnetic Materials 509 (2020) 1668982

Etude des proprietes optoelectroniques de nanocristaux colloidaux a faible bande interdite : application a la detection infrarouge

Authors: Bertille Martinez

Abstract: Colloidal semiconductor nanocrystals are nanomaterials synthesized in solution. Below a certain size, these nanocrystals acquire quantum confinement properties: their optoelectronic properties depend on the nanoparticle size. In the visible range, colloidal nanocrystals are quite mature. The next objective in this field is to get infrared colloidal nanocrystals. Mercury selenide (HgSe) and mercury… ▽ More Colloidal semiconductor nanocrystals are nanomaterials synthesized in solution. Below a certain size, these nanocrystals acquire quantum confinement properties: their optoelectronic properties depend on the nanoparticle size. In the visible range, colloidal nanocrystals are quite mature. The next objective in this field is to get infrared colloidal nanocrystals. Mercury selenide (HgSe) and mercury telluride (HgTe) are potential candidates. The goal of this PhD work is to strengthen our knowledge on optical, optoelectronic and transport properties of these nanocrystals, in order to design an infrared detector. To do so, we studied the electronic structure of HgSe and HgTe for different sizes and surface chemistries. We can then determine the energies of the electronic levels and the Fermi energy, quantify doping level. We show that the nanocrystal size has an influence on doping level, which gets more and more n-type as the nanocrystal size gets larger. We even observe a semiconductor-metal transition in HgSe nanocrystals as the size is increased. The doping control with surface chemistry is then investigated. By using dipolar effects or oxidizing ligands, we show a doping control over several orders of magnitude. Thanks to these studies, we are able to propose a HgTe based device for detection at 2,5 um, which structure allows to convert effectively the absorbed photons into an electrical current and to get a high signal over noise ratio. We get a photoresponse of 20 mA/W and a detectivity of 3.10^9 Jones. △ Less

Submitted 23 August, 2019; originally announced August 2019.

Comments: 156 pages, in French, 100 figures

Spin-orbit effects surfacing on manganites

Authors: S. Valencia, M. J. Calderón, L. López-Mir, Z. Kostantinovic, E. Schierle, E. Weschke, L. Brey, B. Martínez, Ll. Balcells

Abstract: Spin-orbit coupling in magnetic systems lacking inversion symmetry can give rise to non trivial spin textures. Magnetic thin films and heterostructures are potential candidates for the formation of skyrmions and other non-collinear spin configurations as inversion symmetry is inherently lost at their surfaces and interfaces. However, manganites, in spite of their extraordinarily rich magnetic phas… ▽ More Spin-orbit coupling in magnetic systems lacking inversion symmetry can give rise to non trivial spin textures. Magnetic thin films and heterostructures are potential candidates for the formation of skyrmions and other non-collinear spin configurations as inversion symmetry is inherently lost at their surfaces and interfaces. However, manganites, in spite of their extraordinarily rich magnetic phase diagram, have not yet been considered of interest within this context as their spin-orbit coupling is assumed to be negligible. We demonstrate here, by means of angular dependent X-ray linear dichroism experiments and theoretical calculations, the existence of a noncollinear antiferromagnetic ordering at the surface of ferromagnetic La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin films whose properties can only be explained by an unexpectedly large enhancement of the spin-orbit interaction. Our results reveal that spin-orbit coupling, usually assumed to be very small on manganites, can be significantly enhanced at surfaces and interfaces adding a new twist to the possible magnetic orders that can arise in electronically reconstructed systems. △ Less

Submitted 29 August, 2018; originally announced August 2018.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 98, 115142 (2018)

Magnetic anisotropy and valence states in La$_2$Co$_{1-x}$Mn$_{1+x}$O$_6$ ($x\approx 0.23$) thin films studied by X-ray absorption spectroscopy techniques

Authors: Laura López-Mir, Regina Galceran, Javier Herrero-Martín, Bernat Bozzo, José Cisneros-Fernández, Elisa V. Pannunzio Miner, Lluís Balcells, Benjamín Martínez, Carlos Frontera

Abstract: X-ray absorption spectroscopy was used to determine the valence state in La$_2$Co$_{1-x}$Mn$_{1+x}$O$_6$ ($x\approx 0.23$) thin films. We found that in spite of the non-stoichiometry, Co is in a divalent state while Mn ions show a mixed valence state. The relation of this finding with the magnetic properties of the films is discussed. X-ray magnetic circular dichroism measurements prove that magne… ▽ More X-ray absorption spectroscopy was used to determine the valence state in La$_2$Co$_{1-x}$Mn$_{1+x}$O$_6$ ($x\approx 0.23$) thin films. We found that in spite of the non-stoichiometry, Co is in a divalent state while Mn ions show a mixed valence state. The relation of this finding with the magnetic properties of the films is discussed. X-ray magnetic circular dichroism measurements prove that magnetic anisotropy originates from Co spin-orbit coupling and it is strain-dependent: a strong increase of the angular contribution to the magnetic moment is found when in-plane (out-of-plane) and cell parameters get expanded (compressed). This behavior is reproduced by first order perturbation theory calculations. △ Less

Submitted 21 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. B 95, 224434 (2017)

Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn

Authors: R. Galceran, I. Fina, J. Cisneros-Fernández, B. Bozzo, C. Frontera, L. López-Mir, H. Deniz, K. -W. Park, B. -G. Park, Ll. Balcells, X. Martí, T. Jungwirth, B. Martínez

Abstract: Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the li… ▽ More Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15 % has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature. △ Less

Submitted 27 July, 2016; originally announced July 2016.

Strain-induced perpendicular magnetic anisotropy in La$_2$CoMnO$_{6-ε}$ thin films and its dependence with film thickness

Authors: Regina Galceran, Laura López-Mir, Bernat Bozzo, José Cisneros-Fernández, José Santiso, Lluis Balcells, Carlos Frontera, Benjamín Martínez

Abstract: Ferromagnetic insulating La$_2$CoMnO$_{6-ε}$ (LCMO) epitaxial thin films grown on top of SrTiO$_3$ (001) substrates presents a strong magnetic anisotropy favoring the out of plane orientation of the magnetization with a strong anisotropy field ($\sim 70$ kOe for film thickness of about 15 nm) and with a coercive field of about 10 kOe. The anisotropy can be tuned by modifying the oxygen content of… ▽ More Ferromagnetic insulating La$_2$CoMnO$_{6-ε}$ (LCMO) epitaxial thin films grown on top of SrTiO$_3$ (001) substrates presents a strong magnetic anisotropy favoring the out of plane orientation of the magnetization with a strong anisotropy field ($\sim 70$ kOe for film thickness of about 15 nm) and with a coercive field of about 10 kOe. The anisotropy can be tuned by modifying the oxygen content of the film which indirectly has two effects on the unit cell: i) change of the orientation of the LCMO crystallographic axis over the substrate (from c in-plane to c out-of-plane) and ii) shrinkage of the out of plane cell parameter, which implies increasing tensile strain of the films. In contrast, LCMO films grown on (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ and LaAlO$_3$ substrates (with a larger out-of-plane lattice parameter and compressive stress) display in-plane magnetic anisotropy. Thus, we link the strong magnetic anisotropy observed in La$_2$CoMnO$_{6-ε}$ to the relation between in-plane and out-of-plane parameters and so to the film stress. △ Less

Submitted 30 March, 2016; v1 submitted 29 October, 2015; originally announced October 2015.

Comments: 16 pages, 1 table 9 figures Accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 93, 144417 (2016)

Carbon nanostructures obtained by underwater arc discharge of graphite electrodes: Synthesis and characterization

Authors: Juan G. Darias Gonzalez, Lorenzo Hernandez Tabare, Daniel Codorniu Pujals, Victoria Herrera Palma, Augusto Maury Toledo, Olimpia Arias de Fuentes, Jose X. Sierra Trujillo, Armando Bermudez Martinez, Luis F. Desdin Garcia

Abstract: In the present work, the application of the method of underwater arc discharge of graphite electrodes for obtaining several carbon nanostructures is described. The analysis of the obtained products by Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Raman spectroscopy, Atomic Force Microscopy (AFM) and X-Ray Diffraction (XRD) showed that the samples collected from the ma… ▽ More In the present work, the application of the method of underwater arc discharge of graphite electrodes for obtaining several carbon nanostructures is described. The analysis of the obtained products by Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Raman spectroscopy, Atomic Force Microscopy (AFM) and X-Ray Diffraction (XRD) showed that the samples collected from the material floating on the water surface were composed mainly by polyhedral onion-like particles, while those taken from the precipitate were a mixture multiwalled nano-tubes, onion-like particles and other graphitic structures. The main features of the obtained nanostructures are discussed. △ Less

Submitted 13 February, 2015; originally announced February 2015.

Comments: 3 pages, 3 figures, published in the Proceedings of the XV Workshop on Nuclear Physics and IX International Symposium on Nuclear and Related Techniques WONP-NURT'2015, February 9-13, 2015, Havana, Cuba

Engineering the microstructure and magnetism of La$_2$CoMnO$_6$ thin films by tailoring oxygen stoichiometry

Authors: R. Galceran, C. Frontera, Ll. Balcells, J. Cisneros-Fernández, L. López Mir, J. Roqueta, J. Santiso, N. Bagués, B. Bozzo, A. Pomar, F. Sandiumenge, B. Martínez

Abstract: We report on the magnetic and structural properties of ferromagnetic-insulating La$_2$CoMnO$_6$ thin films grown on top of (001) STO substrates by means of RF sputtering technique. Careful structural analysis, by using synchrotron X-ray diffraction, allows identifying two different crystallographic orientations that are closely related to oxygen stoichiometry and to the features (coercive fields a… ▽ More We report on the magnetic and structural properties of ferromagnetic-insulating La$_2$CoMnO$_6$ thin films grown on top of (001) STO substrates by means of RF sputtering technique. Careful structural analysis, by using synchrotron X-ray diffraction, allows identifying two different crystallographic orientations that are closely related to oxygen stoichiometry and to the features (coercive fields and remanence) of the hysteresis loops. Both Curie temperature and magnetic hysteresis turn out to be dependent on the oxygen stoichiometry. In situ annealing conditions allow tailoring the oxygen content of the films, therefore controlling their microstructure and magnetic properties. △ Less

Submitted 8 July, 2014; originally announced July 2014.

Journal ref: Appl. Phys. Letters 105, 242401 (2014)

Intrinsic robust antiferromagnetism at manganite surfaces and interfaces

Authors: S. Valencia, L. Peña, Z. Konstantinovic, Ll. Balcells, R. Galceran, D. Schmitz, F. Sandiumenge, M. Casanove, B. Martínez

Abstract: Ferromagnetic/metallic manganese perovskites, such as La2/3Sr1/3MnO3 (LSMO)are promising materials for the design and implementation of novel spintronic devices working at room temperature. However, their implementation in practical applications has been severely hampered due to the breakdown of their magnetotransport properties at temperatures well below their magnetic transition temperature. Thi… ▽ More Ferromagnetic/metallic manganese perovskites, such as La2/3Sr1/3MnO3 (LSMO)are promising materials for the design and implementation of novel spintronic devices working at room temperature. However, their implementation in practical applications has been severely hampered due to the breakdown of their magnetotransport properties at temperatures well below their magnetic transition temperature. This breakdown has been usually associated to surface and interface related problems but its physical origin has not been clearly established yet. In this work we investigate the interface between La2/3Sr1/3MnO3 (LSMO) thin films and different capping layers by means of x-ray linear dichroism and transport measurements. Our data reveal that, irrespective to the capping material, LSMO/capping layer bilayers exhibit an antiferromegnetic/insulating phase at the interface, likely to originate from a preferential occupancy of Mn 3d 3z2-r2 eg orbitals. This phase, which extends ca. 2 unit cells, is also observed in an uncapped LSMO reference sample thus, pointing to an intrinsic interfacial phase separation phenomenon, likely to be promoted by the structural disruption and symmetry breaking at the LSMO free surface/interface. These experimental observations strongly suggest that the structural disruption at the LSMO interfaces play a major role on the observed depressed magnetotransport properties in manganite-based magnetic tunneling junctions and it is at the origin of the so-called dead layer. △ Less

Submitted 21 February, 2013; originally announced February 2013.

Comments: 19 pages, 5 figures, 1 table

Competing misfit relaxation mechanisms in epitaxial correlated oxides

Authors: Felip Sandiumenge, José Santiso, Lluis Balcells, Zorica Konstantinovic, Jaume Roqueta, Alberto Pomar, Benjamin Martínez

Abstract: Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidences of a four-stage hierarchical development of octahedral-framework perturbations resulting from a progressive imbalance between electronic, elastic a… ▽ More Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidences of a four-stage hierarchical development of octahedral-framework perturbations resulting from a progressive imbalance between electronic, elastic and octahedral tilting energies in La0.7Sr0.3MnO3 epitaxial thin films grown on SrTiO3 substrates. Electronic softening of the Mn - O bonds near the substrate leads to the formation of an interfacial layer clamped to the substrate with strongly degraded magnetotransport properties, i.e. the so-called dead layer, while rigid octahedral tilts become relevant at advanced growth stages without significant effects on charge transport and magnetic ordering. △ Less

Submitted 16 November, 2012; v1 submitted 28 June, 2012; originally announced June 2012.

Journal ref: Phys. Rev. Lett. 110, 107206 (2013)

Mn valence instability in La2/3Ca1/3MnO3 thin films

Authors: S. Valencia, A. Gaupp, W. Gudat, Ll. Abad, Ll. Balcells, A. Cavallaro, B. Martinez, F. J. Palomares

Abstract: A Mn valence instability on La2/3Ca1/3MnO3 thin films, grown on LaAlO3 (001)substrates is observed by x-ray absorption spectroscopy at the Mn L-edge and O K-edge. As-grown samples, in situ annealed at 800 C in oxygen, exhibit a Curie temperature well below that of the bulk material. Upon air exposure a reduction of the saturation magnetization, MS, of the films is detected. Simultaneously a Mn2+… ▽ More A Mn valence instability on La2/3Ca1/3MnO3 thin films, grown on LaAlO3 (001)substrates is observed by x-ray absorption spectroscopy at the Mn L-edge and O K-edge. As-grown samples, in situ annealed at 800 C in oxygen, exhibit a Curie temperature well below that of the bulk material. Upon air exposure a reduction of the saturation magnetization, MS, of the films is detected. Simultaneously a Mn2+ spectral signature develops, in addition to the expected Mn3+ and Mn4+ contributions, which increases with time. The similarity of the spectral results obtained by total electron yield and fluorescence yield spectroscopy indicates that the location of the Mn valence anomalies is not confined to a narrow surface region of the film, but can extend throughout the whole thickness of the sample. High temperature annealing at 1000 C in air, immediately after growth, improves the magnetic and transport properties of such films towards the bulk values and the Mn2+ signature in the spectra does not appear. The Mn valence is then stable even to prolonged air exposure. We propose a mechanism for the Mn2+ ions formation and discuss the importance of these observations with respect to previous findings and production of thin films devices. △ Less

Submitted 16 September, 2009; originally announced September 2009.

Comments: Double space, 21 pages, 6 figures

Journal ref: Phys. Rev. B 73, 104402 (2006)

Exchange bias in laterally oxidized Au/Co/Au nanopillars

Authors: Ll. Balcells, B. Martinez, O. Iglesias, J. M. Garcia-Martin, A. Cebollada, A. Garcia-Martin, G. Armelles, B. Sepulveda, Y. Alaverdyan

Abstract: Au/Co/Au nanopillars fabricated by colloidal lithography of continuous trilayers exhibit and enhanced coercive field and the appearance of an exchange bias field with respect to the continuous layers. This is attributed to the lateral oxidation of the Co interlayer that appears upon disc fabrication. The dependence of the exchange bias field on the Co nanodots size and on the oxidation degree is… ▽ More Au/Co/Au nanopillars fabricated by colloidal lithography of continuous trilayers exhibit and enhanced coercive field and the appearance of an exchange bias field with respect to the continuous layers. This is attributed to the lateral oxidation of the Co interlayer that appears upon disc fabrication. The dependence of the exchange bias field on the Co nanodots size and on the oxidation degree is analyzed and its microscopic origin clarified by means of Monte Carlo simulations based on a model of a cylindrical dot with lateral core/shell structure. △ Less

Submitted 10 February, 2009; originally announced February 2009.

Comments: 8 pages, 4 figures. Published in Appl. Phys. Lett

Magnetic dead layers in La2/3Ca1/3MnO3 thin films probed by X-ray magnetic circular dichroism in reflection

Authors: S. Valencia, A. Gaupp, W. Gudat, Ll. Abad, Ll. Balcells, B. Martinez

Abstract: Surface magnetic properties of perovskite manganites have been a recurrent topic during last years since they play a major role in the implementation of magnetoelectronic devices. Magneto-optical techniques, such as X-ray magnetic circular dichroism, turn out to be a very efficient tool to study surface magnetism due to their sensitivity to magnetic and chemical variations across the sample dept… ▽ More Surface magnetic properties of perovskite manganites have been a recurrent topic during last years since they play a major role in the implementation of magnetoelectronic devices. Magneto-optical techniques, such as X-ray magnetic circular dichroism, turn out to be a very efficient tool to study surface magnetism due to their sensitivity to magnetic and chemical variations across the sample depth. Nevertheless, the application of the sum rules for the determination of the spin magnetic moment might lead to uncertainties as large as 40% in case of Mn ions. To overcome this problem we present an alternative approach consisting of using X-ray magnetic circular dichroism in reflection geometry. Fit of the data by using a computer code based in a 4X4 matrix formalism leads to realistic results. In particular, we show that surface and interface roughness are of major relevance for a proper description of the experimental data and a correct interpretation of the results. By using such an approach we demonstrate the presence of a narrow surface region with strongly depressed magnetic properties in La2/3Ca1/3MnO3 thin films. △ Less

Submitted 6 June, 2007; originally announced June 2007.

Comments: 29 pages, 3 tables and 5 figures. submitted

Formation of Mn2+ in La2/3Ca1/3MnO3 Thin Films due to Air Exposure

Authors: S. Valencia, A. Gaupp, Ll. Abad, Ll. Balcells, F. J. Palomares, A. Cavallaro, B. Martinez, W. Gudat

Abstract: We report on the chemical stability of La2/3Ca1/3MnO3 thin films. X-ray absorption spectroscopy at the Mn L-edge and O K-edge makes evident deviations from the nominally expected (2/3-1/3) Mn3+/Mn4+ ratio after the growth of thin films on LaAlO3 substrates. As-grown thin films, exhibiting Curie temperature, TC, well below that of the LCMO bulk material, develop an unexpected Mn2+ contribution af… ▽ More We report on the chemical stability of La2/3Ca1/3MnO3 thin films. X-ray absorption spectroscopy at the Mn L-edge and O K-edge makes evident deviations from the nominally expected (2/3-1/3) Mn3+/Mn4+ ratio after the growth of thin films on LaAlO3 substrates. As-grown thin films, exhibiting Curie temperature, TC, well below that of the LCMO bulk material, develop an unexpected Mn2+ contribution after a few days of air exposure which increases with time. Moreover, a reduction of the saturation magnetization, MS, is also detected. The similarity of the results obtained by electron yield and fluorescence yield demonstrates that the location of the Mn valence anomalies are not confined to a narrow surface region of the film but can extend throughout the film thickness in case of granular films. High temperature annealing not only improves the magnetic and transport properties of such as-grown films but also recovers the expected 2/3-1/3 Mn3+/Mn4+ ratio, which thereafter is stable to air exposure. Similar results on La2/3Ca1/3MnO3 films grown on SrTiO3 and NdGaO3 substrates demonstrate that there is no direct relation between the observed Mn valence instability and the strain state of the films due to their lattice mismatch with the substrate. A mechanism for the formation of Mn2+ ions formation is discussed. △ Less

Submitted 20 September, 2005; originally announced September 2005.

Comments: 24 pages, 7 figures, submitted to Phys. Rev. B

Evidence of strong antiferromagnetic coupling between localized and itinerant electrons in ferromagnetic Sr2FeMoO6

Authors: M. Tovar, M. T. Causa, A. Butera, J. Navarro, B. Martinez, J. Fontcuberta, M. C. G. Passeggi

Abstract: Magnetic dc susceptibility ($χ$) and electron spin resonance (ESR) measurements in the paramagnetic regime, are presented. We found a Curie-Weiss (CW) behavior for $χ$(T) with a ferromagnetic $Θ= 446(5)$ K and $μ_{eff} = 4.72(9) μ_{B}/f.u.$, this being lower than that expected for either $Fe^{3+}(5.9μ_{B})$ or $Fe^{2+}(4.9μ_{B})$ ions. The ESR g-factor $g = 2.01(2)$, is associated with… ▽ More Magnetic dc susceptibility ($χ$) and electron spin resonance (ESR) measurements in the paramagnetic regime, are presented. We found a Curie-Weiss (CW) behavior for $χ$(T) with a ferromagnetic $Θ= 446(5)$ K and $μ_{eff} = 4.72(9) μ_{B}/f.u.$, this being lower than that expected for either $Fe^{3+}(5.9μ_{B})$ or $Fe^{2+}(4.9μ_{B})$ ions. The ESR g-factor $g = 2.01(2)$, is associated with $Fe^{3+}$. We obtained an excellent description of the experiments in terms of two interacting sublattices: the localized $Fe^{3+}$ ($3d^{5}$) cores and the delocalized electrons. The coupled equations were solved in a mean-field approximation, assuming for the itinerant electrons a bare susceptibility independent on $T$. We obtained $χ_{e}^{0} = 3.7$ $10^{-4}$ emu/mol. We show that the reduction of $μ_{eff}$ for $Fe^{3+}$ arises from the strong antiferromagnetic (AFM) interaction between the two sublattices. At variance with classical ferrimagnets, we found that $Θ$ is ferromagnetic. Within the same model, we show that the ESR spectrum can be described by Bloch-Hasegawa type equations. Bottleneck is evidenced by the absence of a $g$-shift. Surprisingly, as observed in CMR manganites, no narrowing effects of the ESR linewidth is detected in spite of the presence of the strong magnetic coupling. These results provide evidence that the magnetic order in $Sr_{2}FeMoO_{6}$ does not originates in superexchange interactions, but from a novel mechanism recently proposed for double perovskites. △ Less

Submitted 9 May, 2002; originally announced May 2002.

Cationic ordering control of magnetization in Sr2FeMoO6 double perovskite

Authors: Ll. Balcells, J. Navarro, M. Bibes, A. Roig, B. Martinez, J. Fontcuberta

Abstract: The role of the synthesis conditions on the cationic Fe/Mo ordering in Sr2FeMoO6 double perovskite is addressed. It is shown that this ordering can be controlled and varied systematically. The Fe/Mo ordering has a profound impact on the saturation magnetization of the material. Using the appropriate synthesis protocol a record value of 3.7muB/f.u. has been obtained. Mossbauer analysis reveals th… ▽ More The role of the synthesis conditions on the cationic Fe/Mo ordering in Sr2FeMoO6 double perovskite is addressed. It is shown that this ordering can be controlled and varied systematically. The Fe/Mo ordering has a profound impact on the saturation magnetization of the material. Using the appropriate synthesis protocol a record value of 3.7muB/f.u. has been obtained. Mossbauer analysis reveals the existence of two distinguishable Fe sites in agreement with the P4/mmm symmetry and a charge density at the Fe(m+) ions significantly larger than (+3) suggesting a Fe contribution to the spin-down conduction band. The implications of these findings for the synthesis of Sr2FeMoO6 having optimal magnetoresistance response are discussed. △ Less

Submitted 14 July, 2000; originally announced July 2000.

Comments: 9 pages, 4 figures