Showing 1–35 of 35 results for author: Marsi, M

Direct observation of electronic band gap and hot carrier dynamics in GeAs semiconductor

Authors: Zailan Zhang, Jiuxiang Zhang, Gangqiang Zhou, Jiyuan Xu, Xiao Zhang, Hamid Oughaddou, Weiyan Qi, Evangelos Papalazarou, Luca Perfetti, Zhesheng Chen, Azzedine Bendounan, Marino Marsi

Abstract: Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response. Understanding the underlying mechanism of such devices requires the knowledge of GeAs electronic band structure and of the hot carrier dynamics in its conduction ban… ▽ More Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response. Understanding the underlying mechanism of such devices requires the knowledge of GeAs electronic band structure and of the hot carrier dynamics in its conduction band, whose details are still unclear. In this work, we investigated the properties of occupied and photoexcited states of GeAs in energy-momentum space, by combining scanning tunneling spectroscopy (STS), angle-resolved photoemission spectroscopy (ARPES) and time-resolved ARPES. We found that, GeAs is an indirect gap semiconductor having an electronic gap of 0.8 eV, for which the conduction band minimum (CBM) is located at the Gamma point while the valence band maximum (VBM) is out of Gamma. A Stark broadening of the valence band is observed immediately after photoexcitation, which can be attributed to the effects of the electrical field at the surface induced by inhomogeneous screening. Moreover, the hot electrons relaxation time of 1.56 ps down to the CBM which is dominated from both inter-valley and intra-valley coupling. Besides their relevance for our understanding of GeAs, these findings present general interest for the design on high performance thermoelectric and optoelectronic devices based on 2D semiconductors. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Dynamics of electronic states in the insulating Intermediate surface phase of 1T-TaS$_2$

Authors: Jingwei Dong, Weiyan Qi, Dongbin Shin, Laurent Cario, Zhesheng Chen, Romain Grasset, Davide Boschetto, Mateusz Weis, Pierrick Lample, Ernest Pastor, Tobias Ritschel, Marino Marsi, Amina Taleb, Noejung Park, Angel Rubio, Evangelos Papalazarou, Luca Perfetti

Abstract: This article reports a comparative study of bulk and surface properties in the transition metal dichalcogenide 1T-TaS$_2$. When heating the sample, the surface displays an intermediate insulating phase that persists for $\sim 10$ K on top of a metallic bulk. The weaker screening of Coulomb repulsion and stiffer Charge Density Wave (CDW) explain such resilience of a correlated insulator in the topm… ▽ More This article reports a comparative study of bulk and surface properties in the transition metal dichalcogenide 1T-TaS$_2$. When heating the sample, the surface displays an intermediate insulating phase that persists for $\sim 10$ K on top of a metallic bulk. The weaker screening of Coulomb repulsion and stiffer Charge Density Wave (CDW) explain such resilience of a correlated insulator in the topmost layers. Both time resolved ARPES and transient reflectivity are employed to investigate the dynamics of electrons and CDW collective motion. It follows that the amplitude mode is always stiffer at the surface and displays variable coupling to the Mott-Peierls band, stronger in the low temperature phase and weaker in the intermediate one. △ Less

Submitted 31 October, 2023; v1 submitted 12 July, 2023; originally announced July 2023.

Electronic dispersion, correlations and stacking in the photoexcited state of 1T-TaS$_2$

Authors: Jingwei Dong, Dongbin Shin, Ernest Pastor, Tobias Ritschel, Laurent Cario, Zhesheng Chen, Weyain Qi, Romain Grasset, Marino Marsi, Amina Taleb-Ibrahimi, Noejung Park, Angel Rubio, Luca Perfetti, Evangelos Papalazarou

Abstract: Here we perform angle and time-resolved photoelectron spectroscopy on the commensurate Charge Density Wave (CDW) phase of 1T-TaS$_2$. Data with different probe pulse polarization are employed to map the dispersion of electronic states below and above the chemical potential. Upon photoexcitation, the fluctuations of CDW order erase the band dispersion near to the chemical potential and halve the ch… ▽ More Here we perform angle and time-resolved photoelectron spectroscopy on the commensurate Charge Density Wave (CDW) phase of 1T-TaS$_2$. Data with different probe pulse polarization are employed to map the dispersion of electronic states below and above the chemical potential. Upon photoexcitation, the fluctuations of CDW order erase the band dispersion near to the chemical potential and halve the charge gap size. This transient phase sets within half a period of the coherent lattice motion and is favored by strong electronic correlations. The experimental results are compared to Density-Functional Theory (DFT) calculations with a self-consistent evaluation of the Coulomb repulsion. Our simulations indicate that the screening of Coulomb repulsion depends on the stacking order of the TaS$_2$ layers. The entanglement of such degrees of freedom suggest that both the structural order and electronic repulsion are locally modified by the photoinduced CDW fluctuations. △ Less

Submitted 14 June, 2023; v1 submitted 20 October, 2022; originally announced October 2022.

Dichroism in time-resolved ARPES and valence band orbital nature in BaNiS2

Authors: J. Zhang, Z. Chen, J. Caillaux, Y. Klein, A. Gauzzi, A. Bendounan, A. Taleb-Ibrahimi, L. Perfetti, E. Papalazarou, M. Marsi

Abstract: Time-resolved ARPES gives access to the band structure and ultrafast dynamics of excited electronic states in solids. The orbital character of the bands close to the Fermi level is essential to understand the origin of several exotic phenomena in quantum materials. By performing polarization dependent time- and angle-resolved photoemission spectroscopy and by analyzing the chirality of the photoel… ▽ More Time-resolved ARPES gives access to the band structure and ultrafast dynamics of excited electronic states in solids. The orbital character of the bands close to the Fermi level is essential to understand the origin of several exotic phenomena in quantum materials. By performing polarization dependent time- and angle-resolved photoemission spectroscopy and by analyzing the chirality of the photoelectron yield for two different crystal orientations, we identify the orbital character of bands below and above the chemical potential for the Dirac semimetal BaNiS2. Our results illustrate how the control and understanding of matrix elements effects in time-resolved photoemission spectroscopy can be a powerful tool for the study of quantum materials. △ Less

Submitted 18 June, 2022; originally announced June 2022.

Comments: 10 pages, 6 figures

Low-Temperature Insulating Phase of the Si(111)--7$\times$7 Surface

Authors: S. Modesti, P. M. Sheverdyaeva, P. Moras, C. Carbone, M. Caputo, M. Marsi, E. Tosatti, G. Profeta

Abstract: We investigated the electronic structure of the Si(111)--7$\times$7 surface below 20 K by scanning tunneling and photoemission spectroscopies and by density functional theory calculations. Previous experimental studies have questioned the ground state of this surface, which is expected to be metallic in a band picture because of the odd number of electrons per unit cell. Our differential conductan… ▽ More We investigated the electronic structure of the Si(111)--7$\times$7 surface below 20 K by scanning tunneling and photoemission spectroscopies and by density functional theory calculations. Previous experimental studies have questioned the ground state of this surface, which is expected to be metallic in a band picture because of the odd number of electrons per unit cell. Our differential conductance spectra instead show the opening of an energy gap at the Fermi level and a significant temperature dependence of the electronic properties, especially for the adatoms at the center of the unfaulted half of the unit cell. Complementary photoemission spectra with improved correction of the surface photovoltage shift corroborate the differential conductance data and demonstrate the absence of surface bands crossing the Fermi level at 17 K. These consistent experimental observations point to an insulating ground state and contradict the prediction of a metallic surface obtained by density functional theory in the generalized gradient approximation. The calculations indicate that this surface has or is near a magnetic instability, but remains metallic in the magnetic phases even including correlation effects at mean-field level. We discuss possible origins of the observed discrepancies between experiments and calculations. △ Less

Submitted 19 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. B 102, 035429 (2020)

Photoinduced renormalization of Dirac states in BaNiS$_2$

Authors: Niloufar Nilforoushan, Michele Casula, Marco Caputo, Evangelos Papalazarou, Jonathan Caillaux, Zhesheng Cheng, Luca Perfetti, Adriano Amaricci, David Santos-Cottin, Yannick Klein, Andrea Gauzzi, Marino Marsi

Abstract: By means of pump-probe time- and angle-resolved photoelectron spectroscopy, we provide evidence of a sizeable reduction of the Fermi velocity of out-of-equilibrium Dirac bands in the quasi-two-dimensional semimetal BaNiS$_2$. First-principle calculations indicate that this band renormalization is ascribed to a change in non-local electron correlations driven by a photo-induced enhancement of scree… ▽ More By means of pump-probe time- and angle-resolved photoelectron spectroscopy, we provide evidence of a sizeable reduction of the Fermi velocity of out-of-equilibrium Dirac bands in the quasi-two-dimensional semimetal BaNiS$_2$. First-principle calculations indicate that this band renormalization is ascribed to a change in non-local electron correlations driven by a photo-induced enhancement of screening properties. This effect is accompanied by a slowing down of the Dirac fermions and by a non-rigid shift of the bands at the center of the Brillouin zone. This result suggests that other similar electronic structure renormalizations may be photoinduced in other materials in presence of strong non-local correlations. △ Less

Submitted 31 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. Research 2, 043397 (2020)

Tuning Dirac nodes with correlated d-electrons in BaCo_{1-x}Ni_{x}S_{2}

Authors: N. Nilforoushan, M. Casula, A. Amaricci, M. Caputo, J. Caillaux, L. Khalil, E. Papalazarou, P. Simon, L. Perfetti, I. Vobornik, P. K. Das, J. Fujii, A. Barinov, D. Santos-Cottin, Y. Klein, M. Fabrizio, A. Gauzzi, M. Marsi

Abstract: Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step towards the realization of novel concepts of electronic devices and quantum computation. By means of ARPES experiments and ab initio simulations, here… ▽ More Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step towards the realization of novel concepts of electronic devices and quantum computation. By means of ARPES experiments and ab initio simulations, here we show that Dirac states can be effectively tuned by doping a transition metal sulfide, BaNiS2, through Co/Ni substitution. The symmetry and chemical characteristics of this material, combined with the modification of the charge transfer gap of BaCo_{1-x}Ni_{x}S_{2} across its phase diagram, lead to the formation of Dirac lines whose position in k-space can be displaced along the Gamma M symmetry direction, and their form reshaped. Not only does the doping x tailor the location and shape of the Dirac bands, but it also controls the metal-insulator transition in the same compound, making BaCo_{1-x}Ni_{x}S_{2} a model system to functionalize Dirac materials by varying the strength of electron correlations. △ Less

Submitted 27 November, 2021; v1 submitted 29 May, 2019; originally announced May 2019.

Comments: 12 pages, 4 figures

Journal ref: PNAS 2021 Vol. 118 No. 33 e2108617118

Ultrafast electrons dynamics reveal the high potential of InSe for hot carrier optoelectronics

Authors: Zhesheng Chen, Christine Giorgetti, Jelena Sjakste, Raphael Cabouat, Valerie Veniard, Zailan Zhang, Amina Taleb-Ibrahimi, Evangelos Papalazarou, Marino Marsi, Abhay Shukla, Jacques Peretti, Luca Perfetti

Abstract: We monitor the dynamics of hot carriers in InSe by means of two photons photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxation. First, they thermalize to the electronic states degenerate with the $\bar M$ valley. Subsequently, the electronic cooling is dictated by Fröhlich coupling with phonons of small momentum transfer. Ab-initio calculati… ▽ More We monitor the dynamics of hot carriers in InSe by means of two photons photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxation. First, they thermalize to the electronic states degenerate with the $\bar M$ valley. Subsequently, the electronic cooling is dictated by Fröhlich coupling with phonons of small momentum transfer. Ab-initio calculations predict cooling rates that are in good agreement with the observed dynamics. We argue that electrons accumulating in states degenerate with the $\bar M$ valley could travel through a multilayer flake of InSe with lateral size of 1 micrometer. The hot carriers pave a viable route to the realization of below-bandgap photodiodes and Gunn oscillators. Our results indicate that these technologies may find a natural implementation in future devices based on layered chalcogenides. △ Less

Submitted 26 May, 2018; originally announced May 2018.

Direct observation of electron thermalization and electron-phonon coupling in photoexcited bismuth

Authors: J. Faure, J. Mauchain, E. Papalazarou, M. Marsi, D. Boschetto, I. Timrov, N. Vast, Y. Ohtsubo, B. Arnaud, L. Perfetti

Abstract: We investigate the ultrafast response of the bismuth (111) surface by means of time resolved photoemission spectroscopy. The direct visualization of the electronic structure allows us to gain insights on electron-electron and electron-phonon interaction. Concerning electron-electron interaction, it is found that electron thermalization is fluence dependent and can take as much as several hundreds… ▽ More We investigate the ultrafast response of the bismuth (111) surface by means of time resolved photoemission spectroscopy. The direct visualization of the electronic structure allows us to gain insights on electron-electron and electron-phonon interaction. Concerning electron-electron interaction, it is found that electron thermalization is fluence dependent and can take as much as several hundreds of femtoseconds at low fluences. This behavior is in qualitative agreement with Landau's theory of Fermi liquids but the data show deviations from the behavior of a common 3D degenerate electron gas. Concerning electron-phonon interaction, our data allows us to directly observe the coupling of individual Bloch state to the coherent $A_{1g}$ mode. It is found that surface states are much less coupled to this mode when compared to bulk states. This is confirmed by \textit{ab initio} calculations of surface and bulk bismuth. △ Less

Submitted 1 February, 2018; originally announced February 2018.

Electron-hole balanced dynamics in the type-II Weyl semimetal candidate WTe2

Authors: M. Caputo, L. Khalil, E. Papalazarou, N. Nilforoushan, L. Perfetti, Q. D. Gibson, R. J. Cava, M. Marsi

Abstract: We present a time- and angular-resolved photoemission (TR-ARPES) study of the transition- metal dichalcogenide WTe2, a candidate type II Weyl semimetal exhibiting extremely large magne- toresistence. Using femtosecond light pulses, we characterize the unoccupied states of the electron pockets above the Fermi level. We track the relaxation dynamics of photoexcited electrons along the unoccupied ban… ▽ More We present a time- and angular-resolved photoemission (TR-ARPES) study of the transition- metal dichalcogenide WTe2, a candidate type II Weyl semimetal exhibiting extremely large magne- toresistence. Using femtosecond light pulses, we characterize the unoccupied states of the electron pockets above the Fermi level. We track the relaxation dynamics of photoexcited electrons along the unoccupied band structure and into a bulk hole pocket. Following the ultrafast carrier relaxation, we report remarkably similar decay dynamics for electrons and holes. Our results corroborate the hypothesis that carrier compensation is a key factor in the exceptional magnetotransport properties of WTe2. △ Less

Submitted 14 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. B 97, 115115 (2018)

Time resolved photoemission spectroscopy of electronic cooling and localization in CH$_3$NH$_3$PbI$_3$ crystals

Authors: Zhesheng Chen, Min-i Lee, Zailan Zhang, Hiba Diab, Damien Garrot, Ferdinand Lédée, Pierre Fertey, Evangelos Papalazarou, Marino Marsi, Carlito Ponseca, Emmanuelle Deleporte, Antonio Tejeda, Luca Perfetti

Abstract: We measure the surface of CH$_3$NH$_3$PbI$_3$ single crystals by making use of two photon photoemission spectroscopy. Our method monitors the electronic distribution of photoexcited electrons, explicitly discriminating the initial thermalization from slower dynamical processes. The reported results disclose the fast dissipation channels of hot carriers (0.25 ps), set a upper bound to the surface i… ▽ More We measure the surface of CH$_3$NH$_3$PbI$_3$ single crystals by making use of two photon photoemission spectroscopy. Our method monitors the electronic distribution of photoexcited electrons, explicitly discriminating the initial thermalization from slower dynamical processes. The reported results disclose the fast dissipation channels of hot carriers (0.25 ps), set a upper bound to the surface induced recombination velocity ($<4000$ cm/s) and reveal the dramatic effect of shallow traps on the electrons dynamics. The picosecond localization of excited electrons in degraded CH$_3$NH$_3$PbI$_3$ samples is consistent with the progressive reduction of photoconversion efficiency in operating devices. Minimizing the density of shallow traps and solving the aging problem may boost the macroscopic efficiency of solar cells to the theoretical limit. △ Less

Submitted 1 September, 2017; originally announced September 2017.

Comments: 7 pages, 8 figures

Journal ref: Phys. Rev. Materials 1, 045402 (2017)

Photoinduced filling of near nodal gap in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$

Authors: Z. Zhang, C. Piovera, E. Papalazarou, M. Marsi, M. d'Astuto, C. J. van der Beek, A. Taleb-Ibrahimi, L. Perfetti

Abstract: We report time and angle resolved spectroscopic measurements in optimally doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$. The spectral function is monitored as a function of temperature, photoexcitation density and delay time from the pump pulse. According to our data, the superconducting gap becomes slightly stiffer when moving off the nodal direction. The nodal quasiparticles develop a faster dynamics when… ▽ More We report time and angle resolved spectroscopic measurements in optimally doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$. The spectral function is monitored as a function of temperature, photoexcitation density and delay time from the pump pulse. According to our data, the superconducting gap becomes slightly stiffer when moving off the nodal direction. The nodal quasiparticles develop a faster dynamics when pumping the superconductor with a fluence that is large enough to induce the total collapse of the gap. We discuss the observed relaxation in terms of a dynamical reformation of Cooper pairs. △ Less

Submitted 16 June, 2017; v1 submitted 22 March, 2017; originally announced March 2017.

Comments: 6 pages, 7 figures

Journal ref: Phys. Rev. B 96, 064510 (2017)

Ultrafast evolution and transient phases of the prototype out-of-equilibrium Mott-Hubbard material V2O3

Authors: G. Lantz, B Mansart, D. Grieger, D. Boschetto, N. Nilforoushan, E. Papalazarou, N. Moisan, L. Perfetti, V. L. R. Jacques, D. Le Bolloc'h, C. Laulhé, S. Ravy, J. -P. Rueff, T. E. Glover, M. P. Hertlein, Z. Hussain, S. Song, M. Chollet, M. Fabrizio, M. Marsi

Abstract: The study of photoexcited strongly correlated materials is attracting growing interest since their rich phase diagram often translates into an equally rich out-of-equilibrium behavior, including non-thermal phases and photoinduced phase transitions. With femtosecond optical pulses, electronic and lattice degrees of freedom can be transiently decoupled, giving the opportunity of stabilizing new sta… ▽ More The study of photoexcited strongly correlated materials is attracting growing interest since their rich phase diagram often translates into an equally rich out-of-equilibrium behavior, including non-thermal phases and photoinduced phase transitions. With femtosecond optical pulses, electronic and lattice degrees of freedom can be transiently decoupled, giving the opportunity of stabilizing new states of matter inaccessible by quasi-adiabatic pathways. Here we present a study of the ultrafast non-equilibrium evolution of the prototype Mott-Hubbard material V2O3, which presents a transient non-thermal phase developing immediately after photoexcitation and lasting few picoseconds. For both the insulating and the metallic phase, the formation of the transient configuration is triggered by the excitation of electrons into the bonding a1g orbital, and is then stabilized by a lattice distortion characterized by a marked hardening of the A1g coherent phonon. This configuration is in stark contrast with the thermally accessible ones - the A1g phonon frequency actually softens when heating the material. Our results show the importance of selective electron-lattice interplay for the ultrafast control of material parameters, and are of particular relevance for the optical manipulation of strongly correlated systems, whose electronic and structural properties are often strongly intertwinned. △ Less

Submitted 31 August, 2016; originally announced August 2016.

Comments: 6 pages, 4 figures

Journal ref: Nature Communications 8: 13917 (2017)

Stable topological insulators achieved using high energy electron beams

Authors: Lukas Zhao, Marcin Konczykowski, Haiming Deng, Inna Korzhovska, Milan Begliarbekov, Zhiyi Chen, Evangelos Papalazarou, Marino Marsi, Luca Perfetti, Andrzej Hruban, Agnieszka Wołoś, Lia Krusin-Elbaum

Abstract: Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift ($\sim 2.5$ MeV energy) electron beams allows to compensate these defects, bring the Ferm… ▽ More Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift ($\sim 2.5$ MeV energy) electron beams allows to compensate these defects, bring the Fermi level back into the bulk gap, and reach the charge neutrality point (CNP). Controlling the beam fluence we tune bulk conductivity from \textit{p}- (hole-like) to \textit{n}-type (electron-like), crossing the Dirac point and back, while preserving the Dirac energy dispersion. The CNP conductance has a two-dimensional (2D) character on the order of ten conductance quanta $G_0 =e^2/h$, and reveals, both in Bi$_2$Te$_3$ and Bi$_2$Se$_3$, the presence of only two quantum channels corresponding to two topological surfaces. The intrinsic quantum transport of the topological states is accessible disregarding the bulk size. △ Less

Submitted 23 May, 2016; originally announced May 2016.

Comments: Main manuscript - 12 pages, 4 figures; Supplementary file - 15 pages, 11 figures, 1 Table, 4 Notes

Journal ref: Nature Comm. 7, 10957 (2016)

Time resolved photoemission of Sr$_2$IrO$_4$

Authors: C. Piovera, V. Brouet, E. Papalazarou, M. Caputo, M. Marsi, A. Taleb-Ibrahimi, B. J. Kim, L. Perfetti

Abstract: We investigate the temporal evolution of electronic states in strontium iridate Sr$_2$IrO$_4$. The time resolved photoemission spectra of intrinsic, electron doped and the hole doped samples are monitored in identical experimental conditions. Our data on intrinsic and electron doped samples, show that primary doublon-holon pairs relax near to the chemical potential on a timescale shorter than… ▽ More We investigate the temporal evolution of electronic states in strontium iridate Sr$_2$IrO$_4$. The time resolved photoemission spectra of intrinsic, electron doped and the hole doped samples are monitored in identical experimental conditions. Our data on intrinsic and electron doped samples, show that primary doublon-holon pairs relax near to the chemical potential on a timescale shorter than $70$ fs. The subsequent cooling of low energy excitations takes place in two step: a rapid dynamics of $\cong120$ fs is followed by a slower decay of $\cong 1$ ps. The reported timescales endorse the analogies between Sr$_2$IrO$_4$ and copper oxides. △ Less

Submitted 10 July, 2016; v1 submitted 15 March, 2016; originally announced March 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 93, 241114 (2016)

Surface effects on the Mott-Hubbard transition in archetypal V$_2$O$_3$

Authors: G. Lantz, M. Hajlaoui, E. Papalazarou, V. L. R. Jacques, A. Mazzotti, M. Marsi, S. Lupi, M. Amati, L. Gregoratti, L. Si, Z. Zhong, K. Held

Abstract: We present an experimental and theoretical study exploring surface effects on the evolution of the metal-insulator transition in the model Mott-Hubbard compound Cr-doped V$_2$O$_3$. We find a microscopic domain formation that is clearly affected by the surface crystallographic orientation. Using scanning photoelectron microscopy and X-ray diffraction, we find that surface defects act as nucleation… ▽ More We present an experimental and theoretical study exploring surface effects on the evolution of the metal-insulator transition in the model Mott-Hubbard compound Cr-doped V$_2$O$_3$. We find a microscopic domain formation that is clearly affected by the surface crystallographic orientation. Using scanning photoelectron microscopy and X-ray diffraction, we find that surface defects act as nucleation centers for the formation of domains at the temperature-induced isostructural transition and favor the formation of microscopic metallic regions. A density functional theory plus dynamical mean field theory study of different surface terminations shows that the surface reconstruction with excess vanadyl cations leads to doped, and hence more metallic surface states, explaining our experimental observations. △ Less

Submitted 8 July, 2015; originally announced July 2015.

Comments: 5 pages, 4 figures

Quasiparticles dynamics in high-temperature superconductors far from equilibrium: an indication of pairing amplitude without phase coherence

Authors: C. Piovera, Z. Zhang, M. d'Astuto, A. Taleb-Ibrahimi, E. Papalazarou, M. Marsi, Z. Z. Li, H. Raffy, L. Perfetti

Abstract: We perform time resolved photoelectron spectroscopy measurements of optimally doped $\tn{Bi}_2\tn{Sr}_2\tn{CaCu}_2\tn{O}_{8+δ}$ (Bi-2212) and $\tn{Bi}_2\tn{Sr}_{2-x}\tn{La}_{x}\tn{Cu}\tn{O}_{6+δ}$ (Bi-2201). The electrons dynamics show that inelastic scattering by nodal quasiparticles decreases when the temperature is lowered below the critical value of the superconducting phase transition. This d… ▽ More We perform time resolved photoelectron spectroscopy measurements of optimally doped $\tn{Bi}_2\tn{Sr}_2\tn{CaCu}_2\tn{O}_{8+δ}$ (Bi-2212) and $\tn{Bi}_2\tn{Sr}_{2-x}\tn{La}_{x}\tn{Cu}\tn{O}_{6+δ}$ (Bi-2201). The electrons dynamics show that inelastic scattering by nodal quasiparticles decreases when the temperature is lowered below the critical value of the superconducting phase transition. This drop of electronic dissipation is astonishingly robust and survives to photoexcitation densities much larger than the value sustained by long-range superconductivity. The unconventional behaviour of quasiparticle scattering is ascribed to superconducting correlations extending on a length scale comparable to the inelastic path. Our measurements indicate that strongly driven superconductors enter in a regime without phase coherence but finite pairing amplitude. The latter vanishes near to the critical temperature and has no evident link with the pseudogap observed by Angle Resolved Photoelectron Spectroscopy (ARPES). △ Less

Submitted 30 May, 2015; originally announced June 2015.

Comments: 7 pages, 5 Figures

Journal ref: Phys. Rev. B 91, 224509 (2015)

Optical properties of V2O3 in its whole phase diagram

Authors: I. Lo Vecchio, L. Baldassarre, F. D'Apuzzo, O. Limaj, D. Nicoletti, A. Perucchi, L. Fan, P. Metcalf, M. Marsi, S. Lupi

Abstract: Vanadium sesquioxide V2O3 is considered a textbook example of Mott-Hubbard physics. In this paper we present an extended optical study of its whole temperature/doping phase diagram as obtained by doping the pure material with M=Cr or Ti atoms (V1-xMx)2O3. We reveal that its thermodynamically stable metallic and insulating phases, although macroscopically equivalent, show very different low-energy… ▽ More Vanadium sesquioxide V2O3 is considered a textbook example of Mott-Hubbard physics. In this paper we present an extended optical study of its whole temperature/doping phase diagram as obtained by doping the pure material with M=Cr or Ti atoms (V1-xMx)2O3. We reveal that its thermodynamically stable metallic and insulating phases, although macroscopically equivalent, show very different low-energy electrodynamics. The Cr and Ti doping drastically change both the antiferromagnetic gap and the paramagnetic metallic properties. A slight chromium content induces a mesoscopic electronic phase separation, while the pure compound is characterized by short-lived quasiparticles at high temperature. This study thus provides a new comprehensive scenario of the Mott-Hubbard physics in the prototype compound V2O3. △ Less

Submitted 27 April, 2015; originally announced April 2015.

Journal ref: Physical Review B 91(15), 155133 (2015)

Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry

Authors: M. Hajlaoui, E. Papalazarou, J. Mauchain, L. Perfetti, A. Taleb-Ibrahimi, F. Navarin, M. Monteverde, P. Auban-Senzier, C. R. Pasquier, N. Moisan, D. Boschetto, M. Neupane, M. Z. Hasan, T. Durakiewicz, Z. Jiang, Y. Xu, I. Miotkowski, Y. P. Chen, S. Jia, H. W. Ji, R. J. Cava, M. Marsi

Abstract: The advent of Dirac materials has made it possible to realize two dimensional gases of relativistic fermions with unprecedented transport properties in condensed matter. Their photoconductive control with ultrafast light pulses is opening new perspectives for the transmission of current and information. Here we show that the interplay of surface and bulk transient carrier dynamics in a photoexcite… ▽ More The advent of Dirac materials has made it possible to realize two dimensional gases of relativistic fermions with unprecedented transport properties in condensed matter. Their photoconductive control with ultrafast light pulses is opening new perspectives for the transmission of current and information. Here we show that the interplay of surface and bulk transient carrier dynamics in a photoexcited topological insulator can control an essential parameter for photoconductivity - the balance between excess electrons and holes in the Dirac cone. This can result in a strongly out of equilibrium gas of hot relativistic fermions, characterized by a surprisingly long lifetime of more than 50 ps, and a simultaneous transient shift of chemical potential by as much as 100 meV. The unique properties of this transient Dirac cone make it possible to tune with ultrafast light pulses a relativistic nanoscale Schottky barrier, in a way that is impossible with conventional optoelectronic materials. △ Less

Submitted 24 November, 2013; originally announced November 2013.

Comments: Nature Communications, in press (12 pages, 6 figures)

Journal ref: Nature Communications 5, 3003 (2014)

Mott-Hubbard transition in V2O3 revisited

Authors: P. Hansmann, A. Toschi, G. Sangiovanni, T. Saha-Dasgupta, S. Lupi, M. Marsi, K. Held

Abstract: The isostructural metal-insulator transition in Cr-doped V2O3 is the textbook example of a Mott-Hubbard transition between a paramagnetic metal and a paramagnetic insulator. We review recent theoretical calculations as well as experimental findings which shed new light on this famous transition. In particular, the old paradigm of a doping-pressure equivalence does not hold, and there is a microsca… ▽ More The isostructural metal-insulator transition in Cr-doped V2O3 is the textbook example of a Mott-Hubbard transition between a paramagnetic metal and a paramagnetic insulator. We review recent theoretical calculations as well as experimental findings which shed new light on this famous transition. In particular, the old paradigm of a doping-pressure equivalence does not hold, and there is a microscale phase separation for Cr-doped V2O3. △ Less

Submitted 8 March, 2013; originally announced March 2013.

Comments: 16 pages, 11 figures, Feature Article which reviews recent calculations and experiments which shed a new light on the famous Mott-Hubbard transition in V2O3. To appear in physica status solidi (b) 2013

Ultrafast filling of an electronic pseudogap in an incommensurate crystal

Authors: V. Brouet, J. Mauchain, E. Papalazarou, J. Faure, M. Marsi, P. H. Lin, A. Taleb-Ibrahimi, P. Le Fevre, F. Bertran, L. Cario, E. Janod, B. Corraze, V. Ta Phuoc, L. Perfetti

Abstract: We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K… ▽ More We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K induces a partial filling of the electronic pseudogap within less than 80 fs. The electronic energy flows into the lattice modes on a comparable timescale. We attribute this surprisingly short timescale to a very strong electron-phonon coupling to the incommensurate distortion. This result sheds light on the electronic localization arising in aperiodic structures and quasicrystals. △ Less

Submitted 29 January, 2013; originally announced January 2013.

Journal ref: Physical Review B 87, 041106(R) (2013)

Giant Anisotropy of Spin-Orbit Splitting at the Bismuth Surface

Authors: Y. Ohtsubo, J. Mauchain, J. Faure, E. Papalazarou, M. Marsi, P. Le Févre, F. Bertran, A. Taleb-Ibrahimi, L. Perfetti

Abstract: We investigate the bismuth (111) surface by means of time and angle resolved photoelectron spectroscopy. The parallel detection of the surface states below and above the Fermi level reveals a giant anisotropy of the Spin-Orbit (SO) spitting. These strong deviations from the Rashba-like coupling cannot be treated in $\textbf{k}\cdot \textbf{p}$ perturbation theory. Instead, first principle calculat… ▽ More We investigate the bismuth (111) surface by means of time and angle resolved photoelectron spectroscopy. The parallel detection of the surface states below and above the Fermi level reveals a giant anisotropy of the Spin-Orbit (SO) spitting. These strong deviations from the Rashba-like coupling cannot be treated in $\textbf{k}\cdot \textbf{p}$ perturbation theory. Instead, first principle calculations could accurately reproduce the experimental dispersion of the electronic states. Our analysis shows that the giant anisotropy of the SO splitting is due to a large out-of plane buckling of the spin and orbital texture. △ Less

Submitted 18 January, 2015; v1 submitted 6 September, 2012; originally announced September 2012.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 109, 226404 (2012)

Ultrafast surface carrier dynamics in the topological insulator Bi2Te3

Authors: M. Hajlaoui, E. Papalazarou, J. Mauchain, G. Lantz, N. Moisan, D. Boschetto, Z. Jiang, I. Miotkowski, Y. P. Chen, A. Taleb-Ibrahimi, L. Perfetti, M. Marsi

Abstract: We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi$_2$Te$_3$ following a femtosecond laser excitation. Using time and angle resolved photoelectron spectroscopy, we provide a direct real-time visualisation of the transient carrier population of both the surface states and the bulk conduction band. We find that the thermalization of the surface sta… ▽ More We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi$_2$Te$_3$ following a femtosecond laser excitation. Using time and angle resolved photoelectron spectroscopy, we provide a direct real-time visualisation of the transient carrier population of both the surface states and the bulk conduction band. We find that the thermalization of the surface states is initially determined by interband scattering from the bulk conduction band, lasting for about 0.5 ps; subsequently, few ps are necessary for the Dirac cone non-equilibrium electrons to recover a Fermi-Dirac distribution, while their relaxation extends over more than 10 ps. The surface sensitivity of our measurements makes it possible to estimate the range of the bulk-surface interband scattering channel, indicating that the process is effective over a distance of 5 nm or less. This establishes a correlation between the nanoscale thickness of the bulk charge reservoir and the evolution of the ultrafast carrier dynamics in the surface Dirac cone. △ Less

Submitted 20 June, 2012; originally announced June 2012.

Journal ref: Nano Lett. 12, 3532 (2012)

Opening of the superconducting gap in the hole pockets of Ba(Fe(1-x)Co(x))2As2 as seen via Angle-Resolved PhotoElectron Spectroscopy

Authors: B. Mansart, E. Papalazarou, M. Fuglsang Jensen, V. Brouet, L. Petaccia, L. de' Medici, G. Sangiovanni, F. Rullier-Albenque, A. Forget, D. Colson, M. Marsi

Abstract: We present an Angle-Resolved PhotoElectron Spectroscopy study of the changes in the electronic structure of electron doped Ba(Fe(1-x)Co(x))2As2 across the superconducting phase transition. By changing the polarization of the incoming light, we were able to observe the opening of the gap for the inner hole pocket alpha, and to compare its behavior with the outer hole-like band beta. Measurements al… ▽ More We present an Angle-Resolved PhotoElectron Spectroscopy study of the changes in the electronic structure of electron doped Ba(Fe(1-x)Co(x))2As2 across the superconducting phase transition. By changing the polarization of the incoming light, we were able to observe the opening of the gap for the inner hole pocket alpha, and to compare its behavior with the outer hole-like band beta. Measurements along high symmetry directions show that the behavior of beta is consistent with an isotropic gap opening, while slight anisotropies are detected for the inner band alpha. The implications of these results for the s+/- symmetry of the superconducting order parameter are discussed, in relation to the nature of the different iron orbitals contributing to the electronic structure of this multiband system. △ Less

Submitted 29 March, 2012; v1 submitted 28 March, 2012; originally announced March 2012.

Comments: 5 pages; Accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 85, 144508 (2012)

Coherent Phonon Coupling to Individual Bloch States in Photoexcited Bismuth

Authors: E. Papalazarou, J. Faure, J. Mauchain, M. Marsi, A. Taleb-Ibrahimi, I. Reshetnyak, A. van Roekeghem, I. Timrov, N. Vast, B. Arnaud, L. Perfetti

Abstract: We investigate the temporal evolution of the electronic states at the bismuth (111) surface by means of time and angle resolved photoelectron spectroscopy. The binding energy of bulk-like bands oscillates with the frequency of the $A_{1g}$ phonon mode whereas surface states are insensitive to the coherent displacement of the lattice. A strong dependence of the oscillation amplitude on the electron… ▽ More We investigate the temporal evolution of the electronic states at the bismuth (111) surface by means of time and angle resolved photoelectron spectroscopy. The binding energy of bulk-like bands oscillates with the frequency of the $A_{1g}$ phonon mode whereas surface states are insensitive to the coherent displacement of the lattice. A strong dependence of the oscillation amplitude on the electronic wavevector is correctly reproduced by \textit{ab initio} calculations of electron-phonon coupling. Besides these oscillations, all the electronic states also display a photoinduced shift towards higher binding energy whose dynamics follows the evolution of the electronic temperature. △ Less

Submitted 16 December, 2011; originally announced December 2011.

Journal ref: Phys. Rev. Lett. 108, 256808 (2012)

Atomic and itinerant effects at the transition metal x-ray absorption K-pre-edge exemplified in the case of V$_2$O$_3$

Authors: P. Hansmann, M. W. Haverkort, A. Toschi, G. Sangiovanni, F. Rodolakis, J. P. Rueff, M. Marsi, K. Held

Abstract: X-ray absorption spectroscopy is a well established tool for obtaining information about orbital and spin degrees of freedom in transition metal- and rare earth-compounds. For this purpose usually the dipole transitions of the L- (2p to 3d) and M- (3d to 4f) edges are employed, whereas higher order transitions such as quadrupolar 1s to 3d in the K-edge are rarely studied in that respect. This is d… ▽ More X-ray absorption spectroscopy is a well established tool for obtaining information about orbital and spin degrees of freedom in transition metal- and rare earth-compounds. For this purpose usually the dipole transitions of the L- (2p to 3d) and M- (3d to 4f) edges are employed, whereas higher order transitions such as quadrupolar 1s to 3d in the K-edge are rarely studied in that respect. This is due to the fact that usually such quadrupolar transitions are overshadowed by dipole allowed 1s to 4p transitions and, hence, are visible only as minor features in the pre-edge region. Nonetheless, these features carry a lot of valuable information, similar to the dipole L-edge transition, which is not accessible in experiments under pressure due to the absorption of the diamond anvil pressurecell. We recently performed a theoretical and experimental analysis of such a situation for the metal insulator transition of (V(1-x)Crx)2O3. Since the importance of the orbital degrees of freedom in this transition is widely accepted, a thorough understanding of quadrupole transitions of the vanadium K-pre-edge provides crucial information about the underlying physics. Moreover, the lack of inversion symetry at the vanadium site leads to onsite mixing of vanadium 3d- and 4p- states and related quantum mechanical interferences between dipole and quadrupole transitions. Here we present a theoretical analysis of experimental high resolution x-ray absorption spectroscopy at the V pre-K edge measured in partial fluorescence yield mode for single crystals. We carried out density functional as well as configuration interaction calculations in order to capture effects coming from both, itinerant and atomic limits. △ Less

Submitted 7 November, 2011; originally announced November 2011.

Journal ref: Phys. Rev. B 85, 115136 (2012)

Evolution of the electronic structure of a Mott system across its phase diagram: an X-ray absorption spectroscopy study of (V(1-x)Crx)2O3

Authors: F. Rodolakis, J. -P. Rueff, M. Sikora, I. Alliot, J. -P. Itié, F. Baudelet, S. Ravy, P. Wzietek, P. Hansmann, A. Toschi, M. W. Haverkort, G. Sangiovanni, K. Held, P. Metcalf, M. Marsi

Abstract: V2O3 is an archetypal system for the study of correlation induced, Mott-Hubbard metal-insulator transitions. Despite decades of extensive investigations, the accurate description of its electronic properties remains an open problem in the physics of strongly correlated materials, also because of the lack of detailed experimental data on its electronic structure over the whole phase diagram. We pre… ▽ More V2O3 is an archetypal system for the study of correlation induced, Mott-Hubbard metal-insulator transitions. Despite decades of extensive investigations, the accurate description of its electronic properties remains an open problem in the physics of strongly correlated materials, also because of the lack of detailed experimental data on its electronic structure over the whole phase diagram. We present here a high resolution X-ray absorption spectroscopy study at the V K-edge of (V(1-x)Crx)2O3 to probe its electronic structure as a function of temperature, doping and pressure, providing an accurate picture of the electronic changes over the whole phase diagram. We also discuss the relevance of the parallel evolution of the lattice parameters, determined with X-ray diffraction. This allows us to draw two conclusions of general interest: first, the transition under pressure presents peculiar properties, related to a more continuous evolution of the lattice and electronic structure; second, the lattice mismatch is a good parameter describing the strength of the first order transition, and is consequently related to the tendency of the system towards the coexistence of different phases. Our results show that the evolution of the electronic structure while approaching a phase transition, and not only while crossing it, is also a key element to unveil the underlying physical mechanisms of Mott materials . △ Less

Submitted 19 October, 2011; originally announced October 2011.

Journal ref: Phys. Rev. B 84, 245113 (2011)

A Microscopic View on the Mott transition in Chromium-doped V2O3

Authors: S. Lupi, L. Baldassarre, B. Mansart, A. Perucchi, A. Barinov, P. Dudin, E. Papalazarou, F. Rodolakis, J. -P. Rueff, J. -P. Itié, S. Ravy, D. Nicoletti, P. Postorino, P. Hansmann, N. Parragh, A. Toschi, T. Saha-Dasgupta, O. K. Andersen, G. Sangiovanni, K. Held, M. Marsi

Abstract: V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic insulator (PI). This or related MITs have a high technological potential, among others for intelligent windows and field effect transistors. However th… ▽ More V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic insulator (PI). This or related MITs have a high technological potential, among others for intelligent windows and field effect transistors. However the spatial scale on which such transitions develop is not known in spite of their importance for research and applications. Here we unveil for the first time the MIT in Cr-doped V2O3 with submicron lateral resolution: with decreasing temperature, microscopic domains become metallic and coexist with an insulating background. This explains why the associated PM phase is actually a poor metal. The phase separation can be associated with a thermodynamic instability near the transition. This instability is reduced by pressure which drives a genuine Mott transition to an eventually homogeneous metallic state. △ Less

Submitted 8 November, 2010; v1 submitted 2 November, 2010; originally announced November 2010.

Comments: Paper plus supplementary material

Journal ref: Nature Communications 1:105 (2010)

Mott transition in Cr-doped V2O3 studied by ultrafast reflectivity: electron correlation effects on the transient response

Authors: B. Mansart, D. Boschetto, S. Sauvage, A. Rousse, M. Marsi

Abstract: The ultrafast response of the prototype Mott-Hubbard system (V1-xCrx)2O3 was systematically studied with fs pump-probe reflectivity, allowing us to clearly identify the effects of the metal-insulator transition on the transient response. The isostructural nature of the phase transition in this material made it possible to follow across the phase diagram the behaviour of the detected coherent acous… ▽ More The ultrafast response of the prototype Mott-Hubbard system (V1-xCrx)2O3 was systematically studied with fs pump-probe reflectivity, allowing us to clearly identify the effects of the metal-insulator transition on the transient response. The isostructural nature of the phase transition in this material made it possible to follow across the phase diagram the behaviour of the detected coherent acoustic wave, whose average value and lifetime depend on the thermodynamic phase and on the correlated electron density of states. It is also shown how coherent lattice oscillations can play an important role in some changes affecting the ultrafast electronic peak relaxation at the phase transition, changes which should not be mistakenly attributed to genuine electronic effects. These results clearly show that a thorough understanding of the ultrafast response of the material over several tenths of ps is necessary to correctly interpret its sub-ps excitation and relaxation regime, and appear to be of general interest also for other strongly correlated materials. △ Less

Submitted 28 October, 2010; originally announced October 2010.

Comments: 6 pages, 3 figures. Europhysics Letters (in press)

Journal ref: Europhysics Letters 92, 37007 (2010)

Ultrafast transient response and electron-phonon coupling in the iron-pnictide superconductor Ba(Fe(1-x)Co(x))2As2

Authors: B. Mansart, D. Boschetto, A. Savoia, F. Rullier-Albenque, F. Bouquet, E. Papalazarou, A. Forget, D. Colson, A. Rousse, M. Marsi

Abstract: The transient response of Ba(Fe(1-x)Co(x))2As2, x=0.08 was studied by pump-probe optical reflectivity. After ultrafast photoexcitation, hot electrons were found to relax with two different characteristic times, indicating the presence of two distinct decay channels: a faster one, of less than 1 ps in the considered pump fluence range, and a slower one, corresponding to lattice thermalization and l… ▽ More The transient response of Ba(Fe(1-x)Co(x))2As2, x=0.08 was studied by pump-probe optical reflectivity. After ultrafast photoexcitation, hot electrons were found to relax with two different characteristic times, indicating the presence of two distinct decay channels: a faster one, of less than 1 ps in the considered pump fluence range, and a slower one, corresponding to lattice thermalization and lasting ~6 ps. Our analysis indicates that the fast relaxation should be attributed to preferential scattering of the electrons with only a subset of the lattice vibration modes, with a second moment of the Eliashberg function lambda(omega^2)~64 meV^2. The simultaneous excitation of a strong fully symmetric A(1g) optical phonon corroborates this conclusion and makes it possible to deduce the value of lambda~0.12. This small value for the electron-phonon coupling confirms that a phonon mediated process cannot be the only mechanism leading to the formation of superconducting pairs in this family of pnictides. △ Less

Submitted 21 July, 2010; v1 submitted 17 June, 2010; originally announced June 2010.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 82, 024513 (2010)

Significant reduction of electronic correlations upon isovalent Ru substitution of BaFe2As2

Authors: V. Brouet, F. Rullier-Albenque, M. Marsi, B. Mansart, M. Aichhorn, S. Biermann, J. Faure, L. Perfetti, A. Taleb-Ibrahimi, P. Le Fevre, F. Bertran, A. Forget, D. Colson

Abstract: We present a detailed investigation of Ba(Fe0.65Ru0.35)2As2 by transport measurements and Angle Resolved photoemission spectroscopy. We observe that Fe and Ru orbitals hybridize to form a coherent electronic structure and that Ru does not induce doping. The number of holes and electrons, deduced from the area of the Fermi Surface pockets, are both about twice larger than in BaFe2As2. The contribut… ▽ More We present a detailed investigation of Ba(Fe0.65Ru0.35)2As2 by transport measurements and Angle Resolved photoemission spectroscopy. We observe that Fe and Ru orbitals hybridize to form a coherent electronic structure and that Ru does not induce doping. The number of holes and electrons, deduced from the area of the Fermi Surface pockets, are both about twice larger than in BaFe2As2. The contribution of both carriers to the transport is evidenced by a change of sign of the Hall coefficient with decreasing temperature. Fermi velocities increase significantly with respect to BaFe2As2, suggesting a significant reduction of correlation effects. This may be a key to understand the appearance of superconductivity at the expense of magnetism in undoped iron pnictides. △ Less

Submitted 24 September, 2010; v1 submitted 26 February, 2010; originally announced February 2010.

Journal ref: PRL 105 087001 (2010)

Inequivalent routes across the Mott transition in V2O3 explored by X-ray absorption

Authors: F. Rodolakis, P. Hansmann, J. -P. Rueff, A. Toschi, M. W. Haverkort, G. Sangiovanni, A. Tanaka, T. Saha-Dasgupta, O. K. Andersen, K. Held, M. Sikora, I. Alliot, J. -P. Itié, F. Baudelet, P. Wzietek, P. Metcalf, M. Marsi

Abstract: The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre K-edge. Contrary to what has been taken for granted so far, the metallic phase reached under pressure is shown to differ from the one obtained by changing doping or temperature. Using a no… ▽ More The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre K-edge. Contrary to what has been taken for granted so far, the metallic phase reached under pressure is shown to differ from the one obtained by changing doping or temperature. Using a novel computational scheme, we relate this effect to the role and occupancy of the a1g orbitals. This finding unveils the inequivalence of different routes across the Mott transition in V2O3 △ Less

Submitted 4 January, 2010; originally announced January 2010.

Journal ref: Phys. Rev. Lett. 104, 047401 (2010)

Nesting between hole and electron pockets in Ba(Fe1-xCox)2As2 (x=0-0.3) observed with angle-resolved photoemission

Authors: V. Brouet, M. Marsi, B. Mansart, A. Nicolaou, A. Taleb-Ibrahimi, P. Le Fevre, F. Bertran, F. Rullier-Albenque, A. Forget, D. Colson

Abstract: We present a comprehensive angle-resolved photoemission study of the three-dimensional electronic structure of Ba(Fe1-xCox)2As2. The wide range of dopings covered by this study, x=0 to x=0.3, allows to extract systematic features of the electronic structure. We show that there are three different hole pockets around the G point, the two inner ones being nearly degenerate and rather two dimension… ▽ More We present a comprehensive angle-resolved photoemission study of the three-dimensional electronic structure of Ba(Fe1-xCox)2As2. The wide range of dopings covered by this study, x=0 to x=0.3, allows to extract systematic features of the electronic structure. We show that there are three different hole pockets around the G point, the two inner ones being nearly degenerate and rather two dimensional, the outer one presenting a strong three dimensional character. The structure of the electron pockets is clarified by studying high doping contents, where they are enlarged. They are found to be essentially circular and two dimensional. From the size of the pockets, we deduce the number of holes and electrons present at the various dopings. We find that the net number of carriers is in good agreement with the bulk stoichiometry, but that the number of each species (holes and electrons) is smaller than predicted by theory. Finally, we discuss the quality of nesting in the different regions of the phase diagram. The presence of the third hole pocket significantly weakens the nesting at x=0, so that it may not be a crucial ingredient in the formation of the Spin Density Wave. On the other hand, superconductivity seems to be favored by the coexistence of two-dimensional hole and electron pockets of similar sizes. △ Less

Submitted 30 July, 2009; originally announced July 2009.

Valence band electronic structure of V2O3: identification of V and O bands

Authors: E. Papalazarou, Matteo Gatti, M. Marsi, V. Brouet, F. Iori, Lucia Reining, E. Annese, I. Vobornik, F. Offi, A. Fondacaro, S. Huotari, P. Lacovig, O. Tjernberg, N. B. Brookes, M. Sacchi, P. Metcalf, G. Panaccione

Abstract: We present a comprehensive study of the photon energy dependence of the valence band photoemission yield in the prototype Mott-Hubbard oxide V2O3. The analysis of our experimental results, covering an extended photon energy range (20-6000 eV) and combined with GW calculations, allow us to identify the nature of the orbitals contributing to the total spectral weight at different binding energies,… ▽ More We present a comprehensive study of the photon energy dependence of the valence band photoemission yield in the prototype Mott-Hubbard oxide V2O3. The analysis of our experimental results, covering an extended photon energy range (20-6000 eV) and combined with GW calculations, allow us to identify the nature of the orbitals contributing to the total spectral weight at different binding energies, and in particular to locate the V 4s at about 8 eV binding energy. From this comparative analysis we can conclude that the intensity of the quasiparticle photoemission peak, observed close to the Fermi level in the paramagnetic metallic phase upon increasing photon energy, does not have a significant correlation with the intensity variation of the O 2p and V 3d yield, thus confirming that bulk sensitivity is an essential requirement for the detection of this coherent low energy excitation. △ Less

Submitted 25 March, 2009; originally announced March 2009.

Quasiparticle evolution and pseudogap formation in V2O3: An infrared spectroscopy study

Authors: L. Baldassarre, A. Perucchi, D. Nicoletti, A. Toschi, G. Sangiovanni, K. Held, M. Capone, M. Ortolani, L. Malavasi, M. Marsi, P. Metcalf, P. Postorino, S. Lupi

Abstract: The infrared conductivity of V2O3 is measured in the whole phase diagram. Quasiparticles appear above the Neel temperature TN and eventually disappear further enhancing the temperature, leading to a pseudogap in the optical spectrum above 425 K. Our calculations demonstrate that this loss of coherence can be explained only if the temperature dependence of lattice parameters is considered. V2O3 i… ▽ More The infrared conductivity of V2O3 is measured in the whole phase diagram. Quasiparticles appear above the Neel temperature TN and eventually disappear further enhancing the temperature, leading to a pseudogap in the optical spectrum above 425 K. Our calculations demonstrate that this loss of coherence can be explained only if the temperature dependence of lattice parameters is considered. V2O3 is therefore effectively driven from the metallic to the insulating side of the Mott transition as the temperature is increased. △ Less

Submitted 15 April, 2008; v1 submitted 5 October, 2007; originally announced October 2007.

Comments: 5 pages, 3 figures

Journal ref: PHYSICAL REVIEW B 77, 113107 (2008)