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Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer
Authors:
Jie Zhou,
Yifan Wang,
Ziqian Yao,
Qingxiao Wang,
Yara S. Banda,
Jiarui Gong,
Yang Liu,
Carolina Adamo,
Patrick Marshall,
Yi Lu,
Tsung-Han Tsai,
Yiran Li,
Vincent Gambin,
Tien Khee Ng,
Boon S. Ooi,
Zhenqiang Ma
Abstract:
We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type degenerately doped GaAs (4E19 cm-3) nanomembrane (NM) onto single-crystalline n-type Si (5E19 cm-3) substrate. At the heterointerface, an amorphous ultrathin oxygen-enriched layer (UOL) was intentionally engineered through…
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We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type degenerately doped GaAs (4E19 cm-3) nanomembrane (NM) onto single-crystalline n-type Si (5E19 cm-3) substrate. At the heterointerface, an amorphous ultrathin oxygen-enriched layer (UOL) was intentionally engineered through chemical oxidation and atomic layer deposition (ALD). Scanning transmission electron microscopy (STEM) confirmed the formation of the UOL and the single crystallinity of the grafted junction. The resulting tunnel diodes consistently exhibited negative differential resistance (NDR) behavior at room temperature, with a high maximum peak-to-valley current ratio (PVCR) of 36.38, valley voltages ranging from 1.3 to 1.8 V, and a peak tunneling current density of 0.95 kA/cm2. This study not only highlights the critical roles of the UOL as both an interface improvement layer and a quantum tunneling medium, but also establishes "semiconductor grafting" as an effective and versatile method for high-performance, lattice-mismatched heterojunction devices.
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Submitted 24 September, 2024;
originally announced September 2024.
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Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction
Authors:
Jie Zhou,
Moheb Sheikhi,
Ashok Dheenan,
Haris Abbasi,
Jiarui Gong,
Yang Liu,
Carolina Adamo,
Patrick Marshall,
Nathan Wriedt,
Clincy Cheung,
Shuoyang Qiu,
Tien Khee Ng,
Qiaoqiang Gan,
Vincent Gambin,
Boon S. Ooi,
Siddharth Rajan,
Zhenqiang Ma
Abstract:
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarka…
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In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm$^2$ along with a low ON resistance of 2 m$Ω\cdot$cm$^2$.
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Submitted 5 October, 2023;
originally announced October 2023.
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Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions
Authors:
Jie Zhou,
Ashok Dheenan,
Jiarui Gong,
Carolina Adamo,
Patrick Marshall,
Moheb Sheikhi,
Tsung-Han Tsai,
Nathan Wriedt,
Clincy Cheung,
Shuoyang Qiu,
Tien Khee Ng,
Qiaoqiang Gan,
Gambin Vincent,
Boon S. Ooi,
Siddharth Rajan,
Zhenqiang Ma
Abstract:
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer pr…
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Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer printing an n-AlGaAs_p-GaAsP nanomembrane to the n-beta phase-Ga$_2$O$_3$ epitaxial substrate, we simultaneously achieved AlGaAs_GaAsP epitaxial n-p junction diode with an ideality factor of 1.29 and a rectification ratio of 2.57E3 at +/- 2 V, and grafted GaAsP_beta_phase_gallium oxides p-n junction diode exhibiting an ideality factor of 1.36 and a rectification ratio of 4.85E2 at +/- 2 V.
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Submitted 14 August, 2023; v1 submitted 12 August, 2023;
originally announced August 2023.
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Breaking electron pairs in the pseudogap regime of SmTiO$_3$/SrTiO$_3$/SmTiO$_3$ quantum wells
Authors:
Xinyi Wu,
Lu Chen,
Jianan Li,
Megan Briggeman,
Patrick B. Marshall,
Susanne Stemmer,
Patrick Irvin,
Jeremy Levy
Abstract:
The strongly correlated two-dimensional electron liquid within SmTiO$_3$/SrTiO$_3$/SmTiO$_3$ quantum well structures exhibits a pseudogap phase when the quantum well width is sufficiently narrow. Using low-temperature transport and optical experiments that drive the quantum-well system out of equilibrium, we find evidence of mobile, long-lived, negatively-charged quasiparticles, consistent with th…
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The strongly correlated two-dimensional electron liquid within SmTiO$_3$/SrTiO$_3$/SmTiO$_3$ quantum well structures exhibits a pseudogap phase when the quantum well width is sufficiently narrow. Using low-temperature transport and optical experiments that drive the quantum-well system out of equilibrium, we find evidence of mobile, long-lived, negatively-charged quasiparticles, consistent with the idea that the pseudogap phase arises from strongly bound electron pairs.
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Submitted 4 May, 2023;
originally announced May 2023.
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Velocity Saturation in La-doped BaSnO3 Thin Films
Authors:
Hareesh Chandrasekar,
Junao Cheng,
Tianshi Wang,
Zhanbo Xia,
Nicholas G. Combs,
Christopher R. Freeze,
Patrick B. Marshall,
Joe McGlone,
Aaron Arehart,
Steven Ringel,
Anderson Janotti,
Susanne Stemmer,
Wu Lu,
Siddharth Rajan
Abstract:
BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining device performance. We report on the experimental measurement of electron saturation velocity in La-doped BaSnO_{3} thin films for a range o…
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BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining device performance. We report on the experimental measurement of electron saturation velocity in La-doped BaSnO_{3} thin films for a range of doping densities. Predicted saturation velocities based on a simple LO-phonon emission model using an effective LO phonon energy of 120 meV show good agreement with measurements of velocity saturation in La-doped BaSnO_{3} films.. Density-dependent saturation velocity in the range of 1.6x10^{7} cm/s reducing to 2x10^{6} cm/s is predicted for δ-doped BaSnO3 channels with carrier densities ranging from 10^{13} cm^{-2} to 2x10^{14} cm^{-2} respectively. These results are expected to aid the informed design of BaSnO3 as the active material for high-charge density electronic transistors.
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Submitted 3 August, 2019; v1 submitted 13 May, 2019;
originally announced May 2019.
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Resolving interfacial charge transfer in titanate superlattices using resonant X-ray reflectometry
Authors:
R. F. Need,
P. B. Marshall,
E. Weschke,
A. J. Grutter,
D. A. Gilbert,
E. Arenholz,
P. Shafer,
S. Stemmer,
S. D. Wilson
Abstract:
Charge transfer in oxide heterostructures can be tuned to promote emergent interfacial states, and accordingly, has been the subject of intense study in recent years. However, accessing the physics at these interfaces, which are often buried deep below the sample surface, remains difficult. Addressing this challenge requires techniques capable of measuring the local electronic structure with high-…
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Charge transfer in oxide heterostructures can be tuned to promote emergent interfacial states, and accordingly, has been the subject of intense study in recent years. However, accessing the physics at these interfaces, which are often buried deep below the sample surface, remains difficult. Addressing this challenge requires techniques capable of measuring the local electronic structure with high-resolution depth dependence. Here, we have used linearly-polarized resonant X-ray reflectometry (RXR) as a means to visualize charge transfer in oxide superlattices with atomic layer precision. From our RXR measurements, we extract valence depth profiles of SmTiO$_3$ (SmTO)/SrTiO$_3$ (STO) heterostructures with STO quantum wells varying in thickness from 5 SrO planes down to a single, atomically thin SrO plane. At the polar-nonpolar SmTO/STO interface, an electrostatic discontinuity leads to approximately half an electron per areal unit cell transferred from the interfacial SmO layer into the neighboring STO quantum well. We observe this charge transfer as a suppression of the t$_{2g}$ absorption peaks that minimizes contrast with the neighboring SmTO layers at those energies and leads to a pronounced absence of superlattice peaks in the reflectivity data. Our results demonstrate the sensitivity of RXR to electronic reconstruction at the atomic scale, and establish RXR as a powerful means of characterizing charge transfer at buried oxide interfaces.
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Submitted 14 June, 2018;
originally announced June 2018.
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Electrically controlled water permeation through graphene oxide membranes
Authors:
K. -G. Zhou,
K. S. Vasu,
C. T. Cherian,
M. Neek-Amal,
J. C. Zhang,
H. Ghorbanfekr-Kalashami,
K. Huang,
O. P. Marshall,
V. G. Kravets,
J. Abraham,
Y. Su,
A. N. Grigorenko,
A. Pratt,
A. K. Geim,
F. M. Peeters,
K. S. Novoselov,
R. R. Nair
Abstract:
Developing 'smart' membranes that allow precise and reversible control of molecular permeation using external stimuli would be of intense interest for many areas of science: from physics and chemistry to life-sciences. In particular, electrical control of water permeation through membranes is a long-sought objective and is of crucial importance for healthcare and related areas. Currently, such adj…
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Developing 'smart' membranes that allow precise and reversible control of molecular permeation using external stimuli would be of intense interest for many areas of science: from physics and chemistry to life-sciences. In particular, electrical control of water permeation through membranes is a long-sought objective and is of crucial importance for healthcare and related areas. Currently, such adjustable membranes are limited to the modulation of wetting of the membranes and controlled ion transport, but not the controlled mass flow of water. Despite intensive theoretical work yielding conflicting results, the experimental realisation of electrically controlled water permeation has not yet been achieved. Here we report electrically controlled water permeation through micrometre-thick graphene oxide (GO) membranes. By controllable electric breakdown, conductive filaments are created in the GO membrane. The electric field concentrated around such current carrying filaments leads to controllable ionisation of water molecules in graphene capillaries, allowing precise control of water permeation: from ultrafast permeation to complete blocking. Our work opens up an avenue for developing smart membrane technologies and can revolutionize the field of artificial biological systems, tissue engineering and filtration.
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Submitted 16 May, 2018;
originally announced May 2018.
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Electron nematic fluid in a strained Sr3Ru2O7 film
Authors:
Patrick B. Marshall,
Kaveh Ahadi,
Honggyu Kim,
Susanne Stemmer
Abstract:
Sr3Ru2O7 belongs to the family of layered strontium ruthenates and exhibits a range of unusual emergent properties, such as electron nematic behavior and metamagnetism. Here, we show that epitaxial film strain significantly modifies these phenomena. In particular, we observe enhanced magnetic interactions and an electron nematic phase that extends to much higher temperatures and over a larger magn…
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Sr3Ru2O7 belongs to the family of layered strontium ruthenates and exhibits a range of unusual emergent properties, such as electron nematic behavior and metamagnetism. Here, we show that epitaxial film strain significantly modifies these phenomena. In particular, we observe enhanced magnetic interactions and an electron nematic phase that extends to much higher temperatures and over a larger magnetic field range than in bulk single crystals. Furthermore, the films show an unusual anisotropic non-Fermi liquid behavior that is controlled by the direction of the applied magnetic field. At high magnetic fields the metamagnetic transition to a ferromagnetic phase recovers isotropic Fermi-liquid behavior. The results support the interpretation that these phenomena are linked to the special features of the Fermi surface, which can be tuned by both film strain and an applied magnetic field.
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Submitted 23 April, 2018;
originally announced April 2018.
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Response of the lattice across the filling-controlled Mott metal-insulator transition of a rare earth titanate
Authors:
Honggyu Kim,
Patrick B. Marshall,
Kaveh Ahadi,
Thomas E. Mates,
Evgeny Mikheev,
Susanne Stemmer
Abstract:
The lattice response of a prototype Mott insulator, SmTiO3, to hole doping is investigated with atomic-scale spatial resolution. SmTiO3 films are doped with Sr on the Sm site with concentrations that span the insulating and metallic sides of the filling-controlled Mott metal-insulator transition (MIT). The GdFeO3-type distortions are investigated using an atomic resolution scanning transmission el…
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The lattice response of a prototype Mott insulator, SmTiO3, to hole doping is investigated with atomic-scale spatial resolution. SmTiO3 films are doped with Sr on the Sm site with concentrations that span the insulating and metallic sides of the filling-controlled Mott metal-insulator transition (MIT). The GdFeO3-type distortions are investigated using an atomic resolution scanning transmission electron microscopy technique that can resolve small lattice distortions with picometer precision. We show that these distortions are gradually and uniformly reduced as the Sr concentration is increased without any phase separation. Significant distortions persist into the metallic state. The results present a new picture of the physics of this prototype filling-controlled MIT, which is discussed.
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Submitted 3 October, 2017;
originally announced October 2017.
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Growth of strontium ruthenate films by hybrid molecular beam epitaxy
Authors:
Patrick B. Marshall,
Honggyu Kim,
Kaveh Ahadi,
Susanne Stemmer
Abstract:
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional MBE that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr2RuO4 are obtained. At high substrate temperatures, growth…
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We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional MBE that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr2RuO4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.
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Submitted 4 September, 2017;
originally announced September 2017.
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Disorder versus two transport lifetimes in a strongly correlated electron liquid
Authors:
Patrick B. Marshall,
Honggyu Kim,
Susanne Stemmer
Abstract:
We report on angle-dependent measurements of the sheet resistances and Hall coefficients of electron liquids in SmTiO3/SrTiO3/SmTiO3 quantum well structures, which were grown by molecular beam epitaxy on (001) DyScO3. We compare their transport properties with those of similar structures grown on LSAT [(La0.3Sr0.7)(Al0.65Ta0.35)O3]. On DyScO3, planar defects normal to the quantum wells lead to a s…
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We report on angle-dependent measurements of the sheet resistances and Hall coefficients of electron liquids in SmTiO3/SrTiO3/SmTiO3 quantum well structures, which were grown by molecular beam epitaxy on (001) DyScO3. We compare their transport properties with those of similar structures grown on LSAT [(La0.3Sr0.7)(Al0.65Ta0.35)O3]. On DyScO3, planar defects normal to the quantum wells lead to a strong in-plane anisotropy in the transport properties. This allows for quantifying the role of defects in transport. In particular, we investigate differences in the longitudinal and Hall scattering rates, which is a non-Fermi liquid phenomenon known as lifetime separation. The residuals in both the longitudinal resistance and Hall angle were found to depend on the relative orientations of the transport direction to the planar defects. The Hall angle exhibited a robust T2 temperature dependence along all directions, whereas no simple power law could describe the temperature dependence of the longitudinal resistances. Remarkably, the degree of the carrier lifetime separation, as manifested in the distinctly different temperature dependences and diverging residuals near a critical quantum well thickness, was completely insensitive to disorder. The results allow for a clear distinction between disorder-induced contributions to the transport and intrinsic, non-Fermi liquid phenomena, which includes the lifetime separation.
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Submitted 21 August, 2017;
originally announced August 2017.
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Nonlinear light mixing by graphene plasmons
Authors:
D. Kundys,
B. Van Duppen,
O. P. Marshall,
F. Rodriguez,
I. Torre,
A. Tomadin,
M. Polini,
A. N. Grigorenko
Abstract:
Graphene is known to possess strong optical nonlinearity. Its nonlinear response can be further enhanced by graphene plasmons. Here, we report a novel nonlinear electro-absorption effect observed in nanostructured graphene due to excitation of graphene plasmons. We experimentally detect and theoretically explain enhanced nonlinear mixing of near-infrared and mid-infrared light in arrays of graphen…
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Graphene is known to possess strong optical nonlinearity. Its nonlinear response can be further enhanced by graphene plasmons. Here, we report a novel nonlinear electro-absorption effect observed in nanostructured graphene due to excitation of graphene plasmons. We experimentally detect and theoretically explain enhanced nonlinear mixing of near-infrared and mid-infrared light in arrays of graphene nanoribbons. Strong compression of light by graphene plasmons implies that the effect is non-local in nature and orders of magnitude larger than the conventional local graphene nonlinearity. The effect can be used in variety of applications including nonlinear light modulators, light multiplexors, light logic, and sensing devices.
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Submitted 26 May, 2017;
originally announced May 2017.
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Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO$_{3}$/SrTiO$_{3}$/SmTiO$_{3}$ Quantum Well Structures
Authors:
Will J. Hardy,
Brandon Isaac,
Patrick Marshall,
Evgeny Mikheev,
Panpan Zhou,
Susanne Stemmer,
Douglas Natelson
Abstract:
Heterointerfaces of SrTiO$_{3}$ with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO$_{3}$/SrTiO$_{3}$, support a high carrier density electron gas at the interface whose electronic properties are determined by a combination of lattice distortions, spin-orbit coupling, defects, and various…
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Heterointerfaces of SrTiO$_{3}$ with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO$_{3}$/SrTiO$_{3}$, support a high carrier density electron gas at the interface whose electronic properties are determined by a combination of lattice distortions, spin-orbit coupling, defects, and various regimes of magnetic and charge ordering. Here, we study electronic transport in mesoscale devices made with heterostructures of SrTiO$_{3}$ sandwiched between layers of SmTiO$_{3}$, in which the transport properties can be tuned from a regime of Fermi-liquid like resistivity ($ρ\sim T^{2}$) to a non-Fermi liquid ($ρ\sim T^{5/3}$) by controlling the SrTiO$_{3}$ thickness. In mesoscale devices at low temperatures, we find unexpected voltage fluctuations that grow in magnitude as $T$ is decreased below 20 K, are suppressed with increasing contact electrode size, and are independent of the drive current and contact spacing distance. Magnetoresistance fluctuations are also observed, which are reminiscent of universal conductance fluctuations but not entirely consistent with their conventional properties. Candidate explanations are considered, and a mechanism is suggested based on mesoscopic temporal fluctuations of the Seebeck coefficient. An improved understanding of charge transport in these model systems, especially their quantum coherent properties, may lead to insights into the nature of transport in strongly correlated materials that deviate from Fermi liquid theory.
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Submitted 19 April, 2017;
originally announced April 2017.
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Eddy-mixing entropy as a measure of turbulent disorder in barotropic ocean jets
Authors:
Tomos W. David,
Laure Zanna,
David P. Marshall
Abstract:
Understanding the statistics of ocean geostrophic turbulence is of utmost importance in understanding its interactions with the global ocean circulation and the climate system as a whole. Here, a study of eddy-mixing entropy in a forced-dissipative barotropic ocean model is presented. Entropy is a concept of fundamental importance in statistical physics and information theory; motivated by equilib…
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Understanding the statistics of ocean geostrophic turbulence is of utmost importance in understanding its interactions with the global ocean circulation and the climate system as a whole. Here, a study of eddy-mixing entropy in a forced-dissipative barotropic ocean model is presented. Entropy is a concept of fundamental importance in statistical physics and information theory; motivated by equilibrium statistical mechanics theories of ideal geophysical fluids, we consider the effect of forcing and dissipation on eddy-mixing entropy, both analytically and numerically. By diagnosing the time evolution of eddy-mixing entropy it is shown that the entropy provides a descriptive tool for understanding three stages of the turbulence life cycle: growth of instability, formation of large scale structures and steady state fluctuations. Further, by determining the relationship between the time evolution of entropy and the maximum entropy principle, evidence is found for the action of this principle in a forced-dissipative flow. The maximum entropy potential vorticity statistics are calculated for the flow and are compared with numerical simulations. Deficiencies of the maximum entropy statistics are discussed in the context of the mean-field approximation for energy. This study highlights the importance entropy and statistical mechanics in the study of geostrophic turbulence.
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Submitted 26 February, 2017;
originally announced February 2017.
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Hybrid graphene plasmonic waveguide modulators
Authors:
D. Ansell,
B. D. Thackray,
D. E. Aznakayeva,
P. Thomas,
G. H. Auton,
O. P. Marshall,
F. J. Rodriguez,
I. P. Radko,
Z. Han,
S. I. Bozhevolnyi,
A. N. Grigorenko
Abstract:
The unique optical and electronic properties of graphene allow one to realize active optical devices. While several types of graphene-based photonic modulators have already been demonstrated, the potential of combining the versatility of graphene with subwavelength field confinement of plasmonic/metallic structures is not fully realized. Here we report fabrication and study of hybrid graphene-plas…
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The unique optical and electronic properties of graphene allow one to realize active optical devices. While several types of graphene-based photonic modulators have already been demonstrated, the potential of combining the versatility of graphene with subwavelength field confinement of plasmonic/metallic structures is not fully realized. Here we report fabrication and study of hybrid graphene-plasmonic modulators. We consider several types of modulators and identify the most promising one for light modulation at telecom and near-infrared. Our proof-of-concept results pave the way towards on-chip realization of efficient graphene-based active plasmonic waveguide devices for optical communications.
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Submitted 15 September, 2016;
originally announced September 2016.
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Gain Modulation by Graphene Plasmons in Aperiodic Lattice Lasers
Authors:
S. Chakraborty,
O. P. Marshall,
T. G. Folland,
Y. -J. Kim,
A. N. Grigorenko,
K. S. Novoselov
Abstract:
Two-dimensional graphene plasmon-based technologies will enable the development of fast, compact and inexpensive active photonic elements because, unlike plasmons in other materials, graphene plasmons can be tuned via the doping level. Such tuning is harnessed within terahertz quantum cascade lasers to reversibly alter their emission. This is achieved in two key steps: First by exciting graphene p…
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Two-dimensional graphene plasmon-based technologies will enable the development of fast, compact and inexpensive active photonic elements because, unlike plasmons in other materials, graphene plasmons can be tuned via the doping level. Such tuning is harnessed within terahertz quantum cascade lasers to reversibly alter their emission. This is achieved in two key steps: First by exciting graphene plasmons within an aperiodic lattice laser and, second, by engineering photon lifetimes, linking graphene's Fermi energy with the round-trip gain. Modal gain and hence laser spectra are highly sensitive to the doping of an integrated, electrically controllable, graphene layer. Demonstration of the integrated graphene plasmon laser principle lays the foundation for a new generation of active, programmable plasmonic metamaterials with major implications across photonics, material sciences and nanotechnology.
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Submitted 14 February, 2016;
originally announced February 2016.
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Carrier density independent scattering rate in SrTiO3-based electron liquids
Authors:
Evgeny Mikheev,
Santosh Raghavan,
Jack Y. Zhang,
Patrick B. Marshall,
Adam P. Kajdos,
Leon Balents,
Susanne Stemmer
Abstract:
We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with T^n (T is the temperature and n <= 2) in the cases when it is varied by electrostatic control and chemical doping, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectations f…
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We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with T^n (T is the temperature and n <= 2) in the cases when it is varied by electrostatic control and chemical doping, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectations from Landau Fermi liquid theory, where the scattering rate scales inversely with the Fermi energy (E_F). We discuss that the behavior is very similar to systems traditionally identified as non-Fermi liquids (n < 2). This includes the cuprates and other transition metal oxide perovskites, where strikingly similar density-independent scattering rates have been observed. The results indicate that the applicability of Fermi liquid theory should be questioned for a much broader range of correlated materials and point to the need for a unified theory.
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Submitted 7 December, 2015;
originally announced December 2015.
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Y coupled terahertz quantum cascade lasers
Authors:
Owen P. Marshall,
Subhasish Chakraborty,
Md. Khairuzzaman,
Harvey E. Beere,
David A. Ritchie
Abstract:
Here we demonstrate a Y coupled terahertz (THz) quantum cascade laser (QCL) system. The two THz QCLs working around 2.85 THz are driven by independent electrical pulsers. Total peak THz output power of the Y system, with both arms being driven synchronously, is found to be more than the linear sum of the peak powers from the individual arms; 10.4 mW compared with 9.6 mW (4.7 mW + 4.9 mW). Furtherm…
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Here we demonstrate a Y coupled terahertz (THz) quantum cascade laser (QCL) system. The two THz QCLs working around 2.85 THz are driven by independent electrical pulsers. Total peak THz output power of the Y system, with both arms being driven synchronously, is found to be more than the linear sum of the peak powers from the individual arms; 10.4 mW compared with 9.6 mW (4.7 mW + 4.9 mW). Furthermore, we demonstrate that the emission spectra of this coupled system are significantly different to that of either arm alone, or to the linear combination of their individual spectra.
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Submitted 5 June, 2012;
originally announced June 2012.
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Longitudinal Computer Generated Holograms for Digital Frequency Control in Electronically Tunable Terahertz Lasers
Authors:
Subhasish Chakraborty,
Owen P. Marshall,
Md. Khairuzzaman,
Harvey E. Beere,
David A. Ritchie
Abstract:
A transverse computer-generated hologram (CGH) diffracts and provides flexible control of incident light by steering it to any point in the projected image plane - i.e. CGHs are able to direct the light to where it is needed and away from where it is not. In addition, the number of resolvable points in the image projection plane is a function of the CGH's pixel count. Here we report a longitudinal…
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A transverse computer-generated hologram (CGH) diffracts and provides flexible control of incident light by steering it to any point in the projected image plane - i.e. CGHs are able to direct the light to where it is needed and away from where it is not. In addition, the number of resolvable points in the image projection plane is a function of the CGH's pixel count. Here we report a longitudinal CGH (LCGH), a photonic structure, which swaps the ability to steer light toward fixed spatial points for digital control in the frequency domain. This is of particular interest in the context of tunable lasers. In this regard, an LCGH offers two important degrees-of-freedom (DOFs): 1) provides high-resolution wavevector or k space resolution within the Brillouin zone; 2) enables full control to define or modify the reflectivity at each resolvable k point, so attaining a target spectral response. We demonstrate the flexibility of our LCGH approach by achieving purely electronic tuning between six digitally-selected operating frequencies in a single section terahertz (THz) quantum cascade laser (QCL). These switchable single-frequency devices will simplify combining the power and flexibility of THz QCLs with spectroscopic applications, such as remote sensing, spectral analysis, and both security and medical imaging.
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Submitted 14 May, 2012;
originally announced May 2012.
