Showing 1–3 of 3 results for author: Marshall, M T

Atomic Precision Advanced Manufacturing for Digital Electronics

Authors: Daniel R. Ward, Scott W. Schmucker, Evan M. Anderson, Ezra Bussmann, Lisa Tracy, Tzu-Ming Lu, Leon N. Maurer, Andrew Baczewski, Deanna M. Campbell, Michael T. Marshall, Shashank Misra

Abstract: An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. However, the cost to develop and produce the next generation of these tools has also risen exponentially, to the point where the risk associated with progre… ▽ More An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. However, the cost to develop and produce the next generation of these tools has also risen exponentially, to the point where the risk associated with progressing to smaller feature sizes has created pain points throughout the ecosystem. The present challenge includes shrinking the smallest features from nanometers to atoms (10 nm corresponds to 30 silicon atoms). Relaxing the requirement for achieving scalable manufacturing creates the opportunity to evaluate ideas not one or two generations into the future, but at the absolute physical limit of atoms themselves. This article describes recent advances in atomic precision advanced manufacturing (APAM) that open the possibility of exploring opportunities in digital electronics. Doing so will require advancing the complexity of APAM devices and integrating APAM with CMOS. △ Less

Submitted 25 February, 2020; originally announced February 2020.

Journal ref: Electronic Device Failure Analysis, 22 (2020) 1:4-10

Low Thermal Budget High-k/Metal Surface Gate for Buried Donor-Based Devices

Authors: Evan M. Anderson, DeAnna M. Campbell, Leon N. Maurer, Andrew D. Baczewski, Michael T. Marshall, Tzu-Ming Lu, Ping Lu, Lisa A. Tracy, Scott W. Schmucker, Daniel R. Ward, Shashank Misra

Abstract: Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the invest… ▽ More Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the investigation of alternative fabrication paths that extend to the atomic scale. APAM donor devices can be created using a scanning tunneling microscope (STM). However, these devices are not currently compatible with industry standard fabrication processes. There exists a tradeoff between low thermal budget (LT) processes to limit dopant diffusion and high thermal budget (HT) processes to grow defect-free layers of epitaxial Si and gate oxide. To this end, we have developed an LT epitaxial Si cap and LT deposited Al2O3 gate oxide integrated with an atomically precise single-electron transistor (SET) that we use as an electrometer to characterize the quality of the gate stack. The surface-gated SET exhibits the expected Coulomb blockade behavior. However, the leverage of the gate over the SET is limited by defects in the layers above the SET, including interfaces between the Si and oxide, and structural and chemical defects in the Si cap. We propose a more sophisticated gate stack and process flow that is predicted to improve performance in future atomic precision devices. △ Less

Submitted 11 June, 2020; v1 submitted 20 February, 2020; originally announced February 2020.

Comments: Version accepted for open access publication in Journal of Physics: Materials. Added keywords, additional text to the abstract, additional discussion of interfaces, and additional references. Consolidated references into one section at the end of the document instead of one part for the main article and one part for the supplementary material

All-optical lithography process for contacting atomically-precise devices

Authors: Daniel R. Ward, Michael T. Marshall, DeAnna M. Campbell, Tzu-Ming Lu, Justin C. Koepke, David A. Scrymgeour, Ezra Bussmann, Shashank Misra

Abstract: We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a pat… ▽ More We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process. △ Less

Submitted 8 August, 2017; originally announced August 2017.