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Creating a three dimensional intrinsic electric dipole on rotated CrI$_3$ bilayers
Authors:
Shiva P. Poudel,
Juan M. Marmolejo-Tejada,
Joseph E. Roll,
Martín A. Mosquera,
Salvador Barraza-Lopez
Abstract:
Two-dimensional (2D) materials are being explored as a novel multiferroic platform. One of the most studied magnetoelectric multiferroic 2D materials are antiferromagnetically-coupled (AFM) CrI$_3$ bilayers. Neglecting magnetism, those bilayers possess a crystalline point of inversion, which is only removed by the antiparallel spin configuration among its two constituent monolayers. The resultant…
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Two-dimensional (2D) materials are being explored as a novel multiferroic platform. One of the most studied magnetoelectric multiferroic 2D materials are antiferromagnetically-coupled (AFM) CrI$_3$ bilayers. Neglecting magnetism, those bilayers possess a crystalline point of inversion, which is only removed by the antiparallel spin configuration among its two constituent monolayers. The resultant intrinsic electric dipole on those bilayers has a magnitude no larger than 0.04 pC/m, it points out-of-plane, and it reverts direction when the--Ising-like--cromium spins are flipped (toward opposite layers {\em versus} away from opposite layers). The combined presence of antiferromagnetism and a weak intrinsic electric dipole makes this material a two-dimensional magnetoelectric multiferroic. Here, we remove the crystalline center of inversion of the bilayer by a relative $60^{\circ}$ rotation of its constituent monolayers. This process {\em enhances} the out-of-plane intrinsic electric dipole tenfold with respect to its magnitude in the non-rotated AFM bilayer and also creates an even stronger and switchable in-plane intrinsic electric dipole. The ability to create a three-dimensional electric dipole is important, because it enhances the magnetoelectric coupling on this experimentally accessible 2D material, which is explicitly calculated here as well.
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Submitted 1 May, 2023;
originally announced May 2023.
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Cluster Amplitudes and Their Interplay with Self-Consistency in Density Functional Methods
Authors:
Greta Jacobson,
Juan M. Marmolejo-Tejada,
Martín A. Mosquera
Abstract:
Density functional theory (DFT) provides convenient electronic structure methods for the study of molecular systems and materials. Regular Kohn-Sham DFT calculations rely on unitary transformations to determine the ground-state electronic density, ground state energy, and related properties. However, for dissociation of molecular systems into open-shell fragments, due to the self-interaction error…
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Density functional theory (DFT) provides convenient electronic structure methods for the study of molecular systems and materials. Regular Kohn-Sham DFT calculations rely on unitary transformations to determine the ground-state electronic density, ground state energy, and related properties. However, for dissociation of molecular systems into open-shell fragments, due to the self-interaction error present in a large number of density functional approximations, the self-consistent procedure based on the this type of transformation gives rise to the well-known charge delocalization problem. To avoid this issue, we showed previously that the cluster operator of coupled-cluster theory can be utilized within the context of DFT to solve in an alternative and approximate fashion the ground-state self-consistent problem. This work further examines the application of the singles cluster operator to molecular ground state calculations. Two approximations are derived and explored: i), A linearized scheme of the quadratic equation used to determine the cluster amplitudes, and, ii), the effect of carrying the calculations in a non-self-consistent field fashion. These approaches are found to be capable of improving the energy and density of the system and are quite stable in either case. The theoretical framework discussed in this work could be used to describe, with an added flexibility, quantum systems that display challenging features and require expanded theoretical methods.
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Submitted 7 October, 2022;
originally announced October 2022.
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Slippery paraelectric transition metal dichalcogenide bilayers
Authors:
Juan M. Marmolejo-Tejada,
Joseph E. Roll,
Shiva Prasad Poudel,
Salvador Barraza-Lopez,
Martin A. Mosquera
Abstract:
Traditional ferroelectrics undergo thermally-induced phase transitions whereby their structural symmetry increases. The associated higher-symmetry structure is dubbed {\em paraelectric}. Ferroelectric transition metal dichalcogenide bilayers have been recently shown to become paraelectric, but not much has been said of the atomistic configuration of such a phase. As discovered through numerical ca…
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Traditional ferroelectrics undergo thermally-induced phase transitions whereby their structural symmetry increases. The associated higher-symmetry structure is dubbed {\em paraelectric}. Ferroelectric transition metal dichalcogenide bilayers have been recently shown to become paraelectric, but not much has been said of the atomistic configuration of such a phase. As discovered through numerical calculations that include molecular dynamics here, their paraelectricity can only be ascribed to a time average of ferroelectric phases with opposing intrinsic polarizations, whose switching requires macroscopically large areas to slip in unison.
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Submitted 28 September, 2022;
originally announced September 2022.
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Origin of nonlocal resistance in multiterminal graphene on hexagonal-boron-nitride: Fermi surface edge currents rather than Fermi sea topological valley currents
Authors:
J. M. Marmolejo-Tejada,
J. H. García,
M. Petrović,
P. -H. Chang,
X. -L. Sheng,
A. Cresti,
P. Plecháč,
S. Roche,
B. K. Nikolic
Abstract:
The recent observation [R. V. Gorbachev et al., Science {\bf 346}, 448 (2014)] of nonlocal resistance $R_\mathrm{NL}$ near the Dirac point (DP) of multiterminal graphene on aligned hexagonal boron nitride (G/hBN) has been interpreted as the consequence of topological valley Hall currents carried by the Fermi sea states just beneath the bulk gap $E_g$ induced by the inversion symmetry breaking. How…
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The recent observation [R. V. Gorbachev et al., Science {\bf 346}, 448 (2014)] of nonlocal resistance $R_\mathrm{NL}$ near the Dirac point (DP) of multiterminal graphene on aligned hexagonal boron nitride (G/hBN) has been interpreted as the consequence of topological valley Hall currents carried by the Fermi sea states just beneath the bulk gap $E_g$ induced by the inversion symmetry breaking. However, the valley Hall conductivity $σ^v_{xy}$, quantized inside $E_g$, is not directly measurable. Conversely, the Landauer-Büttiker formula, as numerically exact approach to observable nonlocal transport quantities, yields $R_\mathrm{NL} \equiv 0$ for the same simplistic Hamiltonian of gapped graphene that generates $σ^v_{xy} \neq 0$. We combine ab initio with quantum transport calculations to demonstrate that G/hBN wires with zigzag edges host dispersive edge states near the DP that are absent in theories based on the simplistic Hamiltonian. Although such edge states exist also in isolated zigzag graphene wires, aligned hBN is required to modify their energy-momentum dispersion and generate $R_\mathrm{NL} \neq 0$ near the DP persisting in the presence of edge disorder. Concurrently, the edge states resolve the long-standing puzzle of why the highly insulating state of G/hBN is rarely observed. We conclude that the observed $R_\mathrm{NL}$ is unrelated to Fermi sea topological valley currents conjectured for gapped Dirac spectra.
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Submitted 15 January, 2018; v1 submitted 28 June, 2017;
originally announced June 2017.
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Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes
Authors:
J. M. Marmolejo-Tejada,
K. Dolui,
P. Lazic,
P. -H. Chang,
S. Smidstrup,
D. Stradi,
K. Stokbro,
B. K. Nikolic
Abstract:
The control of recently observed spintronic effects in topological-insulator/ferromagnetic-metal (TI/FM) heterostructures is thwarted by the lack of understanding of band structure and spin texture around their interfaces. Here we combine density functional theory with Green's function techniques to obtain the spectral function at any plane passing through atoms of Bi$_2$Se$_3$ and Co or Cu layers…
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The control of recently observed spintronic effects in topological-insulator/ferromagnetic-metal (TI/FM) heterostructures is thwarted by the lack of understanding of band structure and spin texture around their interfaces. Here we combine density functional theory with Green's function techniques to obtain the spectral function at any plane passing through atoms of Bi$_2$Se$_3$ and Co or Cu layers comprising the interface. In contrast to widely assumed but thinly tested Dirac cone gapped by the proximity exchange field, we find that the Rashba ferromagnetic model describes the spectral function on the surface of Bi$_2$Se$_3$ in contact with Co near the Fermi level $E_F^0$, where circular and snowflake-like constant energy contours coexist around which spin locks to momentum. The remnant of the Dirac cone is hybridized with evanescent wave functions injected by metallic layers and pushed, due to charge transfer from Co or Cu layers, few tenths of eV below $E_F^0$ for both Bi$_2$Se$_3$/Co and Bi$_2$Se$_3$/Cu interfaces while hosting distorted helical spin texture wounding around a single circle. These features explain recent observation [K. Kondou {\em et al.}, Nat. Phys. {\bf 12}, 1027 (2016)] of sensitivity of spin-to-charge conversion signal at TI/Cu interface to tuning of $E_F^0$. Interestingly, three monolayers of Co adjacent to Bi$_2$Se$_3$ host spectral functions very different from the bulk metal, as well as in-plane spin textures signifying the spin-orbit proximity effect. We predict that out-of-plane tunneling anisotropic magnetoresistance in vertical heterostructure Cu/Bi$_2$Se$_3$/Co, where current flowing perpendicular to its interfaces is modulated by rotating magnetization from parallel to orthogonal to current flow, can serve as a sensitive probe of spin texture residing at $E_F^0$.
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Submitted 28 March, 2017; v1 submitted 2 January, 2017;
originally announced January 2017.
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Spin Hall Effect and Origins of Nonlocal Resistance in Adatom-Decorated Graphene
Authors:
Dinh Van Tuan,
J. M. Marmolejo-Tejada,
Xavier Waintal,
Branislav K. Nikolic,
Stephan Roche
Abstract:
Recent experiments reporting unexpectedly large spin Hall effect (SHE) in graphene decorated with adatoms have raised a fierce controversy. We apply numerically exact Kubo and Landauer- Buttiker formulas to realistic models of gold-decorated disordered graphene (including adatom clustering) to obtain the spin Hall conductivity and spin Hall angle, as well as the nonlocal resistance as a quantity…
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Recent experiments reporting unexpectedly large spin Hall effect (SHE) in graphene decorated with adatoms have raised a fierce controversy. We apply numerically exact Kubo and Landauer- Buttiker formulas to realistic models of gold-decorated disordered graphene (including adatom clustering) to obtain the spin Hall conductivity and spin Hall angle, as well as the nonlocal resistance as a quantity accessible to experiments. Large spin Hall angles of 0.1 are obtained at zero-temperature, but their dependence on adatom clustering differs from the predictions of semiclassical transport theories. Furthermore, we find multiple background contributions to the nonlocal resistance, some of which are unrelated to SHE or any other spin-dependent origin, as well as a strong suppression of SHE at room temperature. This motivates us to design a multiterminal graphene geometry which suppresses these background contributions and could, therefore, quantify the upper limit for spin current generation in two-dimensional materials.
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Submitted 15 March, 2017; v1 submitted 12 March, 2016;
originally announced March 2016.
