Showing 1–26 of 26 results for author: Marks, T J

The Role of Chalcogen Vacancies in Single Photon Emission from Monolayer Tungsten Dichalcogenides

Authors: S. Carin Gavin, Charles J. Zeman IV, Anushka Dasgupta, Yiying Liu, Wenjing Wu, Shengxi Huang, Tobin J. Marks, Mark C. Hersam, George C. Schatz, Nathaniel P. Stern

Abstract: Understanding the mechanism of single photon emission (SPE) in two-dimensional (2D) materials is an unsolved problem important for quantum optical materials and the development of quantum information applications. In 2D transition metal dichalcogenides (TMDs) such as tungsten diselenide (WSe$_2$), quantum emission has been broadly attributed to exciton localization from atomic point defects, yet t… ▽ More Understanding the mechanism of single photon emission (SPE) in two-dimensional (2D) materials is an unsolved problem important for quantum optical materials and the development of quantum information applications. In 2D transition metal dichalcogenides (TMDs) such as tungsten diselenide (WSe$_2$), quantum emission has been broadly attributed to exciton localization from atomic point defects, yet the precise microscopic picture is not fully understood. This work presents a new framework, supported by both computational and experimental evidence, to explain both the origins of facile SPE in WSe2 and the relative scarcity of SPE in the related 2D TMD, tungsten disulfide (WS$_2$). A vertical divacancy configuration of selenium creates a defect-centered, direct energy gap in the band structure of WSe2, giving rise to highly localized, radiative transitions. This configuration is shown to be energetically preferred in the monolayer lattice, which is reflected in the abundant experimental observation of SPE in WSe2 both from the literature and this work. In contrast, the same vertical divacancy configuration in WS2 does not create direct localized transitions, consistent with scarce observations of SPE in that material. By revealing a single mechanism in tungsten-based TMDs that addresses the prevalence of SPE and is consistent between theory and experiment, these results provide a framework for better understanding the rules governing the atomic origins of single photon emission in TMDs. △ Less

Submitted 4 December, 2024; originally announced December 2024.

Comments: 14 pages, 11 figures

Range-Separated Hybrid Functionals for Mixed-Dimensional Heterojunctions: Application to Phthalocyanines/MoS2

Authors: Qunfei Zhou, Zhen-Fei Liu, Tobin J. Marks, Pierre Darancet

Abstract: We analyze the electronic structure and level alignment of transition-metal phthalocyanine (MPc) molecules adsorbed on two-dimensional MoS$_2$ employing density functional theory (DFT) calculations. We develop a procedure for multi-objective optimal tuning of parameters of range-separated hybrid functionals in these mixed-dimensional systems. Using this procedure, which leads to the asymptotically… ▽ More We analyze the electronic structure and level alignment of transition-metal phthalocyanine (MPc) molecules adsorbed on two-dimensional MoS$_2$ employing density functional theory (DFT) calculations. We develop a procedure for multi-objective optimal tuning of parameters of range-separated hybrid functionals in these mixed-dimensional systems. Using this procedure, which leads to the asymptotically-correct exchange-correlation potential between molecule and two-dimensional material, we obtain electronic structures consistent with experimental photoemission results for both energy level alignment and electronic bandgaps, representing a significant advance compared to standard DFT methods. We elucidate the MoS$_2$ valence resonance with the transition-metal phthalocyanine non-frontier 3$d$ orbitals and its dependence on the transition metal atomic number. Based on our calculations, we derive parameter-free, model self-energy corrections that quantitatively accounts for the effects of the heterogeneous dielectric environment on the electronic structure of these mixed-dimensional heterojunctions. △ Less

Submitted 25 October, 2021; v1 submitted 18 July, 2021; originally announced July 2021.

Self-Assembled Photochromic Molecular Dipoles for High Performance Polymer Thin-Film Transistors

Authors: Satyaprasad P. Senanayak, Vinod K. Sangwan, Julian J. McMorrow, Ken Everaerts, Zhihua Chen, Antonio Facchetti, Mark C. Hersam, Tobin J. Marks, K. S. Narayan

Abstract: The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed dielectric super-lattice structures with photochromic azo-benzene molecules. These nanodielectrics possessing ionic, molecular, and atomic polarization are utilized i… ▽ More The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed dielectric super-lattice structures with photochromic azo-benzene molecules. These nanodielectrics possessing ionic, molecular, and atomic polarization are utilized in polymer thin-film transistors (TFTs) to realize high performance electronics with p-type field-effect mobility exceeding 2 cm^2/(V.s). A crossover in the transport mechanism from electrostatic dipolar disorder to ionic-induced disorder is observed in the transistor characteristics over a range of temperatures. The facile supramolecular design allows the possibility to optically control the extent of molecular and ionic polarization in the ultra-thin nanodielectric. Thus, we demonstrate a three-fold increase in the capacitance from 0.1 uF/cm^2 to 0.34 uF/cm^2, which results in a 200% increase in TFT channel current. △ Less

Submitted 6 June, 2018; originally announced June 2018.

Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors

Authors: Kyle A. Luck, Vinod K. Sangwan, Patrick E. Hartnett, Heather N. Arnold, Michael R. Wasielewski, Tobin J. Marks, Mark C. Hersam

Abstract: Non-fullerene acceptors based on perylenediimides (PDIs) have garnered significant interest as an alternative to fullerene acceptors in organic photovoltaics (OPVs), but their charge transport phenomena are not well understood, especially in bulk heterojunctions (BHJs). Here, we investigate charge transport and current fluctuations by performing correlated low-frequency noise and impedance spectro… ▽ More Non-fullerene acceptors based on perylenediimides (PDIs) have garnered significant interest as an alternative to fullerene acceptors in organic photovoltaics (OPVs), but their charge transport phenomena are not well understood, especially in bulk heterojunctions (BHJs). Here, we investigate charge transport and current fluctuations by performing correlated low-frequency noise and impedance spectroscopy measurements on two BHJ OPV systems, one employing a fullerene acceptor and the other employing a dimeric PDI acceptor. In the dark, these measurements reveal that PDI-based OPVs have a greater degree of recombination in comparison to fullerene-based OPVs. Furthermore, for the first time in organic solar cells, 1/f noise data are fit to the Kleinpenning model to reveal underlying current fluctuations in different transport regimes. Under illumination, 1/f noise increases by approximately four orders of magnitude for the fullerene-based OPVs and three orders of magnitude for the PDI-based OPVs. An inverse correlation is also observed between noise spectral density and power conversion efficiency. Overall, these results show that low-frequency noise spectroscopy is an effective in-situ diagnostic tool to assess charge transport in emerging photovoltaic materials, thereby providing quantitative guidance for the design of next-generation solar cell materials and technologies. △ Less

Submitted 20 September, 2017; originally announced September 2017.

Comments: 37 pages, 7 figures

Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions

Authors: Tejas A. Shastry, Itamar Balla, Hadallia Bergeron, Samuel H. Amsterdam, Tobin J. Marks, Mark C. Hersam

Abstract: Two-dimensional transition metal dichalcogenides (TMDCs) have recently attracted attention due to their superlative optical and electronic properties. In particular, their extraordinary optical absorption and semiconducting band gap have enabled demonstrations of photovoltaic response from heterostructures composed of TMDCs and other organic or inorganic materials. However, these early studies wer… ▽ More Two-dimensional transition metal dichalcogenides (TMDCs) have recently attracted attention due to their superlative optical and electronic properties. In particular, their extraordinary optical absorption and semiconducting band gap have enabled demonstrations of photovoltaic response from heterostructures composed of TMDCs and other organic or inorganic materials. However, these early studies were limited to devices at the micrometer scale and/or failed to exploit the unique optical absorption properties of single-layer TMDCs. Here we present an experimental realization of a large-area type-II photovoltaic heterojunction using single-layer molybdenum disulfide (MoS2) as the primary absorber, by coupling it to the organic π-donor polymer PTB7. This TMDC-polymer heterojunction exhibits photoluminescence intensity that is tunable as a function of the thickness of the polymer layer, ultimately enabling complete quenching of the TMDC photoluminescence. The strong optical absorption in the TMDC-polymer heterojunction produces an internal quantum efficiency exceeding 40% for an overall cell thickness of less than 20 nm, resulting in exceptional current density per absorbing thickness in comparison to other organic and inorganic solar cells. Furthermore, this work provides new insight into the recombination processes in type-II TMDC-polymer heterojunctions and thus provides quantitative guidance to ongoing efforts to realize efficient TMDC-based solar cells. △ Less

Submitted 30 November, 2016; originally announced December 2016.

Comments: 24 pages, 6 figures

Journal ref: ACS Nano, 2016, 10 (11), pp 10573-10579

Mixed-Dimensional van der Waals Heterostructures

Authors: Deep Jariwala, Tobin J. Marks, Mark C. Hersam

Abstract: The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given that any passivated, dangling bond-free surface will interact with another via vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere p… ▽ More The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given that any passivated, dangling bond-free surface will interact with another via vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through noncovalent interactions. In this review, we present a succinct and critical survey of emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices. By comparing and contrasting with all-2D vdW heterostructures as well as with competing conventional technologies, the challenges and opportunities for mixed-dimensional vdW heterostructures are highlighted. △ Less

Submitted 1 August, 2016; originally announced August 2016.

Comments: 8 figures

Covalent Functionalization and Passivation of Exfoliated Black Phosphorus via Aryl Diazonium Chemistry

Authors: Christopher R. Ryder, Joshua D. Wood, Spencer A. Wells, Yang Yang, Deep Jariwala, Tobin J. Marks, George C. Schatz, Mark C. Hersam

Abstract: Functionalization of atomically thin nanomaterials enables the tailoring of their chemical, optical, and electronic properties. Exfoliated black phosphorus, a layered two-dimensional semiconductor exhibiting favorable charge carrier mobility, tunable bandgap, and highly anisotropic properties, is chemically reactive and degrades rapidly in ambient conditions. In contrast, here we show that covalen… ▽ More Functionalization of atomically thin nanomaterials enables the tailoring of their chemical, optical, and electronic properties. Exfoliated black phosphorus, a layered two-dimensional semiconductor exhibiting favorable charge carrier mobility, tunable bandgap, and highly anisotropic properties, is chemically reactive and degrades rapidly in ambient conditions. In contrast, here we show that covalent aryl diazonium functionalization suppresses the chemical degradation of exfoliated black phosphorus even following weeks of ambient exposure. This chemical modification scheme spontaneously forms phosphorus-carbon bonds, has a reaction rate sensitive to the aryl diazonium substituent, and alters the electronic properties of exfoliated black phosphorus, ultimately yielding a strong, tunable p-type doping that simultaneously improves field-effect transistor mobility and on/off current ratio. This chemical functionalization pathway controllably modifies the properties of exfoliated black phosphorus, thus improving its prospects for nanoelectronic applications. △ Less

Submitted 3 May, 2016; originally announced May 2016.

Comments: In print; 27 pages with supporting information in Nature Chemistry 2016

Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors

Authors: Junmo Kang, Deep Jariwala, Christopher R. Ryder, Spencer A. Wells, Yongsuk Choi, Euyheon Hwang, Jeong Ho Cho, Tobin J. Marks, Mark C. Hersam

Abstract: Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semi-metallic graphene and wide band gap transition metal dichalcogenides such as MoS2. To date, BP field-effect transistors have utilized a lateral geometry with in-plane transport dominating device characteristics. In contrast, we present here… ▽ More Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semi-metallic graphene and wide band gap transition metal dichalcogenides such as MoS2. To date, BP field-effect transistors have utilized a lateral geometry with in-plane transport dominating device characteristics. In contrast, we present here a vertical field-effect transistor geometry based on a graphene/BP van der Waals heterostructure. The resulting device characteristics include high on-state current densities (> 1600 A/cm2) and current on/off ratios exceeding 800 at low temperature. Two distinct charge transport mechanisms are identified, which are dominant for different regimes of temperature and gate voltage. In particular, the Schottky barrier between graphene and BP determines charge transport at high temperatures and positive gate voltages, whereas tunneling dominates at low temperatures and negative gate voltages. These results elucidate out-of-plane electronic transport in BP, and thus have implications for the design and operation of BP-based van der Waals heterostructures. △ Less

Submitted 13 March, 2016; originally announced March 2016.

Comments: 4 figures and supporting information, Published in Nano Letters (2016)

Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2

Authors: Deep Jariwala, Sarah L. Howell, Kan-Sheng Chen, Junmo Kang, Vinod K. Sangwan, Stephen A. Filippone, Riccardo Turrisi, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Abstract: The recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semi-metallic graphene and insulating boron nitride, has enabled the fabrication of all 2D van der Waals heterostructure devices. Furthermore, the concept of va… ▽ More The recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semi-metallic graphene and insulating boron nitride, has enabled the fabrication of all 2D van der Waals heterostructure devices. Furthermore, the concept of van der Waals heterostructures has the potential to be significantly broadened beyond layered solids. For example, molecular and polymeric organic solids, whose surface atoms possess saturated bonds, are also known to interact via van der Waals forces and thus offer an alternative for scalable integration with 2D materials. Here, we demonstrate the integration of an organic small molecule p-type semiconductor, pentacene, with a 2D n-type semiconductor, MoS2. The resulting p-n heterojunction is gate-tunable and shows asymmetric control over the anti-ambipolar transfer characteristic. In addition, the pentacene-MoS2 heterojunction exhibits a photovoltaic effect attributable to type II band alignment, which suggests that MoS2 can function as an acceptor in hybrid solar cells. △ Less

Submitted 10 December, 2015; originally announced December 2015.

Comments: 5 figures and supporting information. To appear in Nano Letters

Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2

Authors: V. K. Sangwan, D. Jariwala, I. S. Kim, K. -S. Chen, T. J. Marks, L. J. Lauhon, M. C. Hersam

Abstract: Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device with internal resistance that depends on the history of the external bias voltage. State of the art memristors, based on metal insulator metal (MIM) structures wi… ▽ More Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device with internal resistance that depends on the history of the external bias voltage. State of the art memristors, based on metal insulator metal (MIM) structures with insulating oxides, such as TiO2, are limited by a lack of control over the filament formation and external control of the switching voltage. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS2 devices. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to 1000 and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS2 enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices. △ Less

Submitted 6 April, 2015; originally announced April 2015.

Investigation of Band-Offsets at Monolayer-Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy

Authors: Sarah L. Howell, Deep Jariwala, Chung-Chiang Wu, Kan-Sheng Chen, Vinod K. Sangwan, Junmo Kang, Tobin J. Marks, Mark C. Hersam, Lincoln J. Lauhon

Abstract: The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films. The characteristics of such heterojunctions are analyzed here using current versus voltage measurements, scanning photocurrent microscopy, and finite element simulations of charge carrier transport. Rectifying I-V curves are consistent… ▽ More The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films. The characteristics of such heterojunctions are analyzed here using current versus voltage measurements, scanning photocurrent microscopy, and finite element simulations of charge carrier transport. Rectifying I-V curves are consistently observed between contacts on opposite sides of 1L-ML junctions, and a strong bias-dependent photocurrent is observed at the junction. Finite element device simulations with varying carrier concentrations and electron affinities show that a type II band alignment at single layer/multi-layer junctions reproduces both the rectifying electrical characteristics and the photocurrent response under bias. However, the zero-bias junction photocurrent and its energy dependence are not explained by conventional photovoltaic and photothermoelectric mechanisms, indicating the contributions of hot carriers. △ Less

Submitted 30 March, 2015; originally announced March 2015.

Comments: 5 figures plus supplement

Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors

Authors: Deep Jariwala, Vinod K. Sangwan, Jung-Woo Ted Seo, Weichao Xu, Jeremy Smith, Chris H. Kim, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials prese… ▽ More The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits. Here, we extend the concept of van der Waals heterojunctions to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indium gallium zinc oxide (a-IGZO) thin films that can be solution-processed or sputtered with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions exhibit anti-ambipolar transfer characteristics with high on/off ratios that are well-suited for electronic, optoelectronic, and telecommunication technologies. △ Less

Submitted 13 December, 2014; originally announced December 2014.

Comments: Manuscript (5 figures)+ supporting information, Nano Letters (2014)

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

Authors: Joshua D. Wood, Spencer A. Wells, Deep Jariwala, Kan-Sheng Chen, EunKyung Cho, Vinod K. Sangwan, Xiaolong Liu, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are employed to characterize the structure and chemistry of the degradation process, suggesting that O2 sa… ▽ More Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are employed to characterize the structure and chemistry of the degradation process, suggesting that O2 saturated H2O irreversibly reacts with BP to form oxidized phosphorus species. This interpretation is further supported by the observation that BP degradation occurs more rapidly on hydrophobic octadecyltrichlorosilane self-assembled monolayers and on H-Si(111), versus hydrophilic SiO2. For unencapsulated BP field-effect transistors, the ambient degradation causes large increases in threshold voltage after 6 hours in ambient, followed by a ~10^3 decrease in FET current on/off ratio and mobility after 48 hours. Atomic layer deposited AlOx overlayers effectively suppress ambient degradation, allowing encapsulated BP FETs to maintain high on/off ratios of ~10^3 and mobilities of ~100 cm2/(V*s) for over two weeks in ambient. This work shows that the ambient degradation of BP can be managed effectively when the flakes are sufficiently passivated. In turn, our strategy for enhancing BP environmental stability will accelerate efforts to implement BP in electronic and optoelectronic applications. △ Less

Submitted 7 November, 2014; originally announced November 2014.

Comments: Accepted at Nano Letters; 18 pages, 5 figures, and 23 figure supporting information

Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS$_{2}$

Authors: In Soo Kim, Vinod K. Sangwan, Deep Jariwala, Joshua D. Wood, Spencer Park, Kan-Sheng Chen, Fengyuan Shi, Francisco Ruiz-Zepeda, Arturo Ponce, Miguel Jose-Yacaman, Vinayak P. Dravid, Tobin J. Marks, Mark C. Hersam, Lincoln J. Lauhon

Abstract: Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. Since then, the optoelectronic properties of CVD grown monol… ▽ More Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. Since then, the optoelectronic properties of CVD grown monolayer MoS$_{2}$ have been heavily investigated, but the influence of stoichiometry on the electrical and optical properties has been largely overlooked. Here we systematically vary the stoichiometry of monolayer MoS$_{2}$ during CVD via controlled sulfurization and investigate the associated changes in photoluminescence and electrical properties. X-ray photoelectron spectroscopy is employed to measure relative variations in stoichiometry and the persistence of MoO$_{x}$ species. As MoS$_{2-δ}$ is reduced (increasing δ), the field-effect mobility of monolayer transistors increases while the photoluminescence yield becomes non-uniform. Devices fabricated from monolayers with the lowest sulfur content have negligible hysteresis and a threshold voltage of ~0 V. We conclude that the electrical and optical properties of monolayer MoS$_{2}$ crystals can be tuned via stoichiometry engineering to meet the requirements of various applications. △ Less

Submitted 17 September, 2014; originally announced September 2014.

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics

Authors: Vinod K. Sangwan, Deep Jariwala, Ken Everaerts, Julian J. McMorrow, Jianting He, Matthew Grayson, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain > 1.0 in vacuum (pressure < 2 x 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate… ▽ More Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain > 1.0 in vacuum (pressure < 2 x 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 inch wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics. △ Less

Submitted 7 February, 2014; originally announced February 2014.

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

Authors: Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Towards that end, several classes of hi… ▽ More With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Towards that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development. △ Less

Submitted 31 January, 2014; originally announced February 2014.

Comments: Review article, 10 figures. ACS Nano, 2014, Article ASAP

Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing

Authors: Deep Jariwala, Vinod K. Sangwan, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in… ▽ More In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in selected applications, issues surrounding structural inhomogeneity and imprecise assembly have impeded robust and reliable implementation of carbon nanomaterials in widespread technologies. However, with recent advances in synthesis, sorting, and assembly techniques, carbon nanomaterials are experiencing renewed interest as the basis of numerous scalable technologies. Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity samples. Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area. In this manner, this article will provide guidance to future application developers and also articulate the remaining research challenges confronting this field. △ Less

Submitted 31 January, 2014; originally announced February 2014.

Comments: Review article, 15 figures

Journal ref: Chem. Soc. Rev., 2013, 42, 2824

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

Authors: Deep Jariwala, Vinod K. Sangwan, Chung-Chiang Wu, Pradyumna L. Prabhumirashi, Michael L. Geier, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Abstract: The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high performance field-effect devices have been achieved from monolayered materials and their heterost… ▽ More The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here, we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (s-SWCNTs) and single-layer molybdenum disulfide (SL-MoS2) as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10^4. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency (EQE) of 25% and fast photoresponse < 15 μs. Since SWCNTs have a diverse range of electrical properties as a function of chirality, and since an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics. △ Less

Submitted 22 October, 2013; originally announced October 2013.

Comments: 4 figures. Combined with supporting information Proceedings of the National Academy of Sciences of U.S.A. (2013)

Low Frequency Electronic Noise in Single-Layer MoS2 Transistors

Authors: Vinod K. Sangwan, Heather N. Arnold, Deep Jariwala, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Abstract: Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.0… ▽ More Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (< 10-5 Torr). The field-effect mobility decreased and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 K to 6.5 K. △ Less

Submitted 15 August, 2013; originally announced August 2013.

Comments: Nano Letters (2013)

Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy

Authors: Chung-Chiang Wu, Deep Jariwala, Vinod K. Sangwan, Tobin J. Marks, Mark C. Hersam, Lincoln J. Lauhon

Abstract: The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulphide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to band-bending assisted separation of photoexcited carriers at the MoS2/Au interface. The wavelength-dependent photocurrents of few layer MoS2 transistors qualitatively fo… ▽ More The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulphide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to band-bending assisted separation of photoexcited carriers at the MoS2/Au interface. The wavelength-dependent photocurrents of few layer MoS2 transistors qualitatively follow the optical absorption spectra of MoS2, providing direct evidence of interband photoexcitation. Time and spectrally resolved photocurrent measurements at varying external electric fields and carrier concentrations establish that drift-diffusion currents dominate photothermoelectric currents in devices under bias. △ Less

Submitted 18 July, 2013; originally announced July 2013.

Comments: 4 figure letter + supporting information. Journal of Physical Chemistry Letters (2013)

Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

Authors: Mariana C. Prado, Deep Jariwala, Tobin J. Marks, Mark C. Hersam

Abstract: Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O2 or Ar as the gaseous etchants. Although optical microscopy and Raman spectroscopy are widely used to determine the appropriate duration of dry etching, additional characterization with atomic force microscopy (AFM) reveals that residual graphene and/or etching byproducts persist… ▽ More Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O2 or Ar as the gaseous etchants. Although optical microscopy and Raman spectroscopy are widely used to determine the appropriate duration of dry etching, additional characterization with atomic force microscopy (AFM) reveals that residual graphene and/or etching byproducts persist beyond the point where the aforementioned methods suggest complete graphene etching. Recognizing that incomplete etching may have deleterious effects on devices and/or downstream processing, AFM characterization is used here to determine optimal etching conditions that eliminate graphene dry etching residues. △ Less

Submitted 19 May, 2013; originally announced May 2013.

Comments: manuscript+supporting information

Journal ref: APPLIED PHYSICS LETTERS 102, 193111 (2013)

Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors

Authors: Deep Jariwala, Vinod K. Sangwan, Dattatray J. Late, James E. Johns, Vinayak P. Dravid, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Abstract: Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with… ▽ More Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature. △ Less

Submitted 19 April, 2013; originally announced April 2013.

Extrinsic and Intrinsic Photoresponse in Monodisperse Carbon Nanotube Thin Film Transistors

Authors: Erik Sczygelski, Vinod K. Sangwan, Chung-Chiang Wu, Heather N. Arnold, Ken Everaerts, Tobin J. Marks, Mark C. Hersam, Lincoln J. Lauhon

Abstract: Spectroscopic, time-resolved scanning photocurrent microscopy is shown to distinguish the intrinsic photoresponse of monodisperse semiconducting (99%) single-walled carbon nanotubes (SWCNTs) from the extrinsic photoresponse of the substrate. A persistent positive photocurrent induced by near-IR excitation is attributed to the generation of free carriers by inter-band excitation in SWCNTs. For shor… ▽ More Spectroscopic, time-resolved scanning photocurrent microscopy is shown to distinguish the intrinsic photoresponse of monodisperse semiconducting (99%) single-walled carbon nanotubes (SWCNTs) from the extrinsic photoresponse of the substrate. A persistent positive photocurrent induced by near-IR excitation is attributed to the generation of free carriers by inter-band excitation in SWCNTs. For shorter excitation wavelengths, absorption by the Si substrate generates two types of photocurrent: a transient positive photoresponse, identified as a displacement current, and a persistent negative photocurrent that arises from photogating of the SWCNT thin film. △ Less

Submitted 9 February, 2013; originally announced February 2013.

Quantitatively Enhanced Reliability and Uniformity of High-κ Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers

Authors: Vinod K. Sangwan, Deep Jariwala, Stephen A. Filippone, Hunter J. Karmel, James E. Johns, Justice M. P. Alaboson, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

Abstract: The full potential of graphene in integrated circuits can only be realized with a reliable ultra-thin high-κ top-gate dielectric. Here, we report the first statistical analysis of the breakdown characteristics of dielectrics on graphene, which allows the simultaneous optimization of gate capacitance and the key parameters that describe large-area uniformity and dielectric strength. In particular,… ▽ More The full potential of graphene in integrated circuits can only be realized with a reliable ultra-thin high-κ top-gate dielectric. Here, we report the first statistical analysis of the breakdown characteristics of dielectrics on graphene, which allows the simultaneous optimization of gate capacitance and the key parameters that describe large-area uniformity and dielectric strength. In particular, vertically heterogeneous and laterally homogenous Al2O3 and HfO2 stacks grown via atomic-layer deposition and seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride organic monolayer exhibit high uniformities (Weibull shape parameter β > 25) and large breakdown strengths (Weibull scale parameter, EBD > 7 MV/cm) that are comparable to control dielectrics grown on Si substrates. △ Less

Submitted 9 February, 2013; originally announced February 2013.

Fundamental Performance Limits of Carbon Nanotube Thin-Film Transistors Achieved Using Hybrid Molecular Dielectrics

Authors: Vinod K. Sangwan, Rocio Ponce Ortiz, Justice M. P. Alaboson, Jonathan D. Emery, Michael J. Bedzyk, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam

Abstract: In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in post-growth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate… ▽ More In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in post-growth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm^2/Vs), sub-threshold swing (150 mV/decade), and on/off ratio (5 x 10^5), while also achieving hysteresis-free operation in ambient conditions. △ Less

Submitted 14 September, 2012; originally announced September 2012.

How water meets a very hydrophobic surface

Authors: Sudeshna Chattopadhyay, Ahmet Uysal, Benjamin Stripe, Young-geun Ha, Tobin J. Marks, Evguenia A. Karapetrova, Pulak Dutta

Abstract: Is there a low-density region ('gap') between water and a hydrophobic surface? Previous X-ray/neutron reflectivity results have been inconsistent because the effect (if any) is sub-resolution for the surfaces studied. We have used X-ray reflectivity to probe the interface between water and more hydrophobic smooth surfaces. The depleted region width increases with contact angle and becomes larger t… ▽ More Is there a low-density region ('gap') between water and a hydrophobic surface? Previous X-ray/neutron reflectivity results have been inconsistent because the effect (if any) is sub-resolution for the surfaces studied. We have used X-ray reflectivity to probe the interface between water and more hydrophobic smooth surfaces. The depleted region width increases with contact angle and becomes larger than the resolution, allowing definitive measurements. Large fluctuations are predicted at this interface; however, we find that their contribution to the interface roughness is too small to measure. △ Less

Submitted 23 June, 2010; originally announced June 2010.

Comments: 6 pages, 3 figures; Phys. Rev. Lett., to be published

Journal ref: Phys. Rev. Lett., 105, 37803 (2010)