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An ultrastrongly coupled single THz meta-atom
Authors:
Shima Rajabali,
Sergej Markmann,
Elsa Jöchl,
Mattias Beck,
Christian A. Lehner,
Werner Wegscheider,
Jérôme Faist,
Giacomo Scalari
Abstract:
Free-space coupling to strongly subwavelength individual optical elements is a central theme in quantum optics, as it allows to control and manipulate the properties of quantum systems. In this work, we show that by combining an asymmetric immersion lens setup and complementary design of metasurfaces we are able to perform THz time-domain spectroscopy of an individual, strongly subwavelength (d/λ0…
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Free-space coupling to strongly subwavelength individual optical elements is a central theme in quantum optics, as it allows to control and manipulate the properties of quantum systems. In this work, we show that by combining an asymmetric immersion lens setup and complementary design of metasurfaces we are able to perform THz time-domain spectroscopy of an individual, strongly subwavelength (d/λ0=1/20) meta-atom. We unravel the linewidth dependence of planar metamaterials as a function of the meta-atom number indicating quenching of the Dicke superradiance.
On these grounds, we investigate ultrastrongly coupled Landau polaritons at the single resonator level, measuring a normalized coupling ratio of Ω/ω=0.60 resulting from coupling of the fundamental mode to a few thousand electrons. Similar measurements on a low loss, less doped two dimensional electron gas yield a coupling ratio Ω/ω=0.33 with a cooperativity C=4g^2/κγ= 94. Interestingly, the coupling strength of a coupled single resonator is the same as of a coupled array. Our findings pave the way towards the control of light-matter interaction in the ultrastrong coupling regime at the single electron/single resonator level. The proposed technique is way more general and can be useful to characterize the complex conductivity of micron-sized samples in the THz and sub-THz domain.
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Submitted 19 October, 2021;
originally announced October 2021.
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Universal nuclear focusing of confined electron spins
Authors:
Sergej Markmann,
Christian Reichl,
Werner Wegscheider,
Gian Salis
Abstract:
For spin-based quantum computation in semiconductors, dephasing of electron spins by a fluctuating background of nuclear spins is a main obstacle. Here we show that this nuclear background can be precisely controlled in generic quantum dots by periodically exciting electron spins. We demonstrate this universal phenomenon in many-electron GaAs/AlGaAs quantum dot ensembles using optical pump-probe s…
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For spin-based quantum computation in semiconductors, dephasing of electron spins by a fluctuating background of nuclear spins is a main obstacle. Here we show that this nuclear background can be precisely controlled in generic quantum dots by periodically exciting electron spins. We demonstrate this universal phenomenon in many-electron GaAs/AlGaAs quantum dot ensembles using optical pump-probe spectroscopy. A feedback mechanism between the saturable electron spin polarization and the nuclear system focuses the electron spin precession frequency into discrete spin modes. Employing such control of nuclear spin polarization, the electron spin lifetime within individual dots can surpass the limit of nuclear background fluctuations, thus substantially enhancing the spin coherence time. This opens the door to achieve long electron spin coherence times also in lithographically-defined many-electron systems that can be controlled in shape, size and position.
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Submitted 20 August, 2018;
originally announced August 2018.
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Nanoscale nonlinear effects in Erbium-implanted Yttrium Orthosilicate
Authors:
Nadezhda Kukharchyk,
Stepan Shvarkov,
Sebastian Probst,
Kangwei Xia,
Hans-Werner Becker,
Shovon Pal,
Sergej Markmann,
Roman Kolesov,
Petr Siyushev,
Jörg Wrachtrup,
Arne Ludwig,
Alexey V. Ustinov,
Andreas D. Wieck,
Pavel Bushev
Abstract:
Doping of substrates at desired locations is a key technology for spin-based quantum memory devices. Focused ion beam implantation is well-suited for this task due to its high spacial resolution. In this work, we investigate ion-beam implanted erbium ensembles in Yttrium Orthosilicate crystals by means of confocal photoluminescence spectroscopy. The sample temperature and the post-implantation ann…
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Doping of substrates at desired locations is a key technology for spin-based quantum memory devices. Focused ion beam implantation is well-suited for this task due to its high spacial resolution. In this work, we investigate ion-beam implanted erbium ensembles in Yttrium Orthosilicate crystals by means of confocal photoluminescence spectroscopy. The sample temperature and the post-implantation annealing step strongly reverberate in the properties of the implanted ions. We find that hot implantation leads to a higher activation rate of the ions. At high enough fluences, the relation between the fluence and final concentration of ions becomes non-linear. Two models are developed explaining the observed behaviour.
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Submitted 17 September, 2015;
originally announced September 2015.
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Strong Coupling of Intersubband Resonance in a High Electron Mobility Transistor Structure to a THz Metamaterial by Ultrawide Electrical Tuning
Authors:
Shovon Pal,
Hanond Nong,
Sergej Markmann,
Nadezhda Kukharchyk,
Sascha R. Valentin,
Sven Scholz,
Arne Ludwig,
Claudia Bock,
Ulrich Kunze,
Andreas D. Wieck,
Nathan Jukam
Abstract:
The interaction between intersubband resonances (ISRs) and metamaterial microcavities can form a strongly coupled system where new resonances form that depend on the coupling strength. Here we present experimental evidence of strong coupling between the cavity resonance of a THz metamaterial and the ISR in a high electron mobility transistor structure with a triangular confinement. The device is e…
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The interaction between intersubband resonances (ISRs) and metamaterial microcavities can form a strongly coupled system where new resonances form that depend on the coupling strength. Here we present experimental evidence of strong coupling between the cavity resonance of a THz metamaterial and the ISR in a high electron mobility transistor structure with a triangular confinement. The device is electrically switched from an uncoupled to a strongly coupled regime by tuning the ISR with epitaxially grown transparent gates. An asymmetric triangular potential in the heterostructure enables ultrawide electrical tuning of ISR which is an order of magnitude higher as compared to the equivalent square well. For a single triangular well, we achieve a coupling strength of 0.52 THz, with a normalized coupling ratio of 0.26.
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Submitted 14 April, 2015;
originally announced April 2015.
