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Experimental demonstration of a magnetically induced warping transition in a topological insulator mediated by rare-earth surface dopants
Authors:
Beatriz Muñiz Cano,
Yago Ferreiros,
Pierre A. Pantaleón,
Ji Dai,
Massimo Tallarida,
Adriana I. Figueroa,
Vera Marinova,
Kevin García Díez,
Aitor Mugarza,
Sergio O. Valenzuela,
Rodolfo Miranda,
Julio Camarero,
Francisco Guinea,
Jose Angel Silva-Guillén,
Miguel A. Valbuena
Abstract:
Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the T…
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Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the TSS, evolving its warped shape from hexagonal to trigonal. In this work, we demonstrate such a transition by means of angle-resolved photoemission spectroscopy after the deposition of low concentrations of magnetic rare earths, namely Er and Dy, on the ternary three-dimensional prototypical topological insulator Bi$_2$Se$_2$Te. Signatures of the gap opening occurring as a consequence of the TRS breaking have also been observed, whose existence is supported by the observation of the aforementioned transition. Moreover, increasing the Er coverage results in a tunable p-type doping of the TSS. As a consequence, the Fermi level (E$_{\textrm{F}}$) of our Bi$_2$Se$_2$Te crystals can be gradually tuned towards the TSS Dirac point, and therefore to the magnetically induced bandgap; thus fulfilling two of the necessary prerequisites for the realization of the quantum anomalous Hall effect (QAHE) in this system. The experimental results are rationalized by a theoretical model where a magnetic Zeeman out-of-plane term is introduced in the hamiltonian governing the TSS band dispersion. Our results offer new strategies to control magnetic interactions with TSSs based on a simple approach and open up viable routes for the realization of the QAHE.
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Submitted 3 February, 2023;
originally announced February 2023.
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Resolving spin currents and spin densities generated by charge-spin interconversion in systems with reduced crystal symmetry
Authors:
Lorenzo Camosi,
Josef Svetlik,
Marius V. Costache,
Williams Savero Torres,
Iván Fernández Aguirre,
Vera Marinova,
Dimitre Dimitrov,
Marin Gospodinov,
Juan F. Sierra,
Sergio O. Valenzuela
Abstract:
The ability to control the generation of spins in arbitrary directions is a long-sought goal in spintronics. Charge-to-spin interconversion (CSI) phenomena depend strongly on symmetry. Systems with reduced crystal symmetry allow anisotropic CSI with unconventional components, where charge and spin currents and the spin polarization are not mutually perpendicular to each other. Here, we demonstrate…
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The ability to control the generation of spins in arbitrary directions is a long-sought goal in spintronics. Charge-to-spin interconversion (CSI) phenomena depend strongly on symmetry. Systems with reduced crystal symmetry allow anisotropic CSI with unconventional components, where charge and spin currents and the spin polarization are not mutually perpendicular to each other. Here, we demonstrate experimentally that the CSI in graphene-WTe2 induces spins with components in all three spatial directions. By performing multi-terminal nonlocal spin precession experiments, with specific magnetic field orientations, we discuss how to disentangle the CSI from the spin Hall and inverse spin galvanic effects.
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Submitted 22 December, 2022;
originally announced December 2022.
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Time-independent free energies from metadynamics via Mean Force Integration
Authors:
Veselina Marinova,
Matteo Salvalaglio
Abstract:
Inspired by thermodynamic integration, we propose a method for the calculation of time-independent free energy profiles from history-dependent biased simulations via Mean Force Integration (MFI). MFI circumvents the need for computing the ensemble average of the bias acting on the system c(t) and can be applied to different variants of metadynamics. Moreover, MFI naturally extends to aggregate inf…
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Inspired by thermodynamic integration, we propose a method for the calculation of time-independent free energy profiles from history-dependent biased simulations via Mean Force Integration (MFI). MFI circumvents the need for computing the ensemble average of the bias acting on the system c(t) and can be applied to different variants of metadynamics. Moreover, MFI naturally extends to aggregate information obtained from independent metadynamics simulations, allowing to converge free energy surfaces without the need to sample recrossing events in a single continuous trajectory. We validate MFI against one- and two-dimensional analytical potentials and by computing the conformational free energy landscape of ibuprofen in the bulk of its most common crystal phase.
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Submitted 22 October, 2019; v1 submitted 19 July, 2019;
originally announced July 2019.
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Dynamics and thermodynamics of Ibuprofen conformational isomerism at the crystal/solution interface
Authors:
Veselina Marinova,
Geoffrey P. F. Wood,
Ivan Marziano,
Matteo Salvalaglio
Abstract:
Conformational flexibility of molecules involved in crystal growth and dissolution is rarely investigated in detail, and usually considered to be negligible in the formulation of mesoscopic models of crystal growth. In this work we set out to investigate the conformational isomerism of ibuprofen as it approaches and is incorporated in the morphologically dominant {100} crystal face, in a range of…
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Conformational flexibility of molecules involved in crystal growth and dissolution is rarely investigated in detail, and usually considered to be negligible in the formulation of mesoscopic models of crystal growth. In this work we set out to investigate the conformational isomerism of ibuprofen as it approaches and is incorporated in the morphologically dominant {100} crystal face, in a range of different solvents - water, 1-butanol, toluene, cyclohexanone, cyclohexane, acetonitrile and trichloromethane. To this end we combine extensive molecular dynamics and well-tempered metadynamics simulations to estimate the equilibrium distribution of conformers, compute conformer-conformer transition rates, and extract the characteristic relaxation time of the conformer population in solution, adsorbed at the solid/liquid interface, incorporated in the crystal in contact with the mother solution, and in the crystal bulk. We find that, while the conformational equilibrium distribution is weakly dependent on the solvent, relaxation times are instead significantly affected by it. Furthermore, differences in the relaxation dynamics are enhanced on the crystal surface, where conformational transitions become slower and specific patways are hindered. This leads to observe that the dominant mechanisms of conformational transition can also change significantly moving from the bulk solution to the crystal interface, even for a small molecule with limited conformational flexibility such as ibuprofen. Our findings suggests that understanding conformational flexibility is key to provide an accurate description of the solid/liquid interface during crystal dissolution and growth, and therefore its relevance should be systematically assessed in the formulation of mesoscopic growth models.
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Submitted 12 July, 2018; v1 submitted 10 July, 2018;
originally announced July 2018.
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Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$
Authors:
K. Shrestha,
D. Graf,
V. Marinova,
B. Lorenz,
C. W. Chu
Abstract:
We have investigated the weak antilocalization (WAL) effect in the p-type Bi$_2$Se$_{2.1}$Te$_{0.9}$ topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dom…
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We have investigated the weak antilocalization (WAL) effect in the p-type Bi$_2$Se$_{2.1}$Te$_{0.9}$ topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi$_2$Se$_{2.1}$Te$_{0.9}$ crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T=5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T=0.33K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.
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Submitted 11 October, 2017; v1 submitted 24 June, 2017;
originally announced June 2017.
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Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal
Authors:
K. Shrestha,
V. Marinova,
D. Graf,
B. Lorenz,
C. W. Chu
Abstract:
We have studied the magnetotransport properties of a Sb$_2$Se$_2$Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches to a value of 1100\% at $B$=31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above $B$=15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at $α$=3…
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We have studied the magnetotransport properties of a Sb$_2$Se$_2$Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches to a value of 1100\% at $B$=31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above $B$=15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at $α$=32 T, $β$=80 T and $γ$=117 T indicating the presence of three Fermi surface pockets. Among these frequencies, $β$ is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence $β$ and Berry phase calculations, we have confirmed the trivial topology of the $β$-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz-Kosevich formula, are found to be $m^{*}_β=0.16m_o$ and $m^{*}_γ=0.63m_o$ for the $β$ and $γ$ bands respectively. Large MR of Sb$_2$Se$_2$Te is suitable for utilization in electronic instruments such as a computer hard disc, high field magnetic sensors, and memory devices.
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Submitted 25 September, 2017; v1 submitted 9 April, 2017;
originally announced April 2017.
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Simultaneous detection of quantum oscillations from bulk and topological surface states in metallic Bi2Se2.1Te0.9
Authors:
Keshav Shrestha,
David E. Graf,
Vera Marinova,
Bernd Lorenz,
Paul C. W. Chu
Abstract:
Shubnikov-de Haas (SdH) oscillations in metallic Bi2Se2.1Te0.9 are studied in magnetic fields up to 35 Tesla. It is demonstrated that two characteristic frequencies determine the quantum oscillations of the conductivity. Angle dependent measurements and calculations of the Berry phase show that the two frequencies F1 and F2 describe oscillations from surface and bulk carriers, respectively. At low…
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Shubnikov-de Haas (SdH) oscillations in metallic Bi2Se2.1Te0.9 are studied in magnetic fields up to 35 Tesla. It is demonstrated that two characteristic frequencies determine the quantum oscillations of the conductivity. Angle dependent measurements and calculations of the Berry phase show that the two frequencies F1 and F2 describe oscillations from surface and bulk carriers, respectively. At low magnetic fields, only SdH oscillation from topological surface states can be detected whereas at high magnetic field the bulk oscillations dominate. The origin of the separation of bulk and surface SdH oscillations into different magnetic field ranges is revealed in the difference of the cyclotron masses mc. The bulk mc is nearly three times larger than the surface cyclotron mass resulting in a stronger attenuation of the bulk oscillation amplitude upon decreasing magnetic field. This makes it possible to detect and characterize the surface SdH oscillations in the low-field range and the bulk oscillations at high magnetic fields.
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Submitted 29 March, 2017; v1 submitted 26 March, 2017;
originally announced March 2017.
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Quantum oscillations in metallic Sb2Te2Se topological insulator
Authors:
K. Shrestha,
V. Marinova,
D. Graf,
B. Lorenz,
C. W. Chu
Abstract:
We have studied the magnetotransport properties of the metallic, p-type Sb2Te2Se which is a topological insulator. Magnetoresistance shows Shubnikov de Haas oscillations in fields above B=15 T. The maxima/minima positions of oscillations measured at different tilt angles with respect to the B direction align with the normal component of field Bcosine, implying the existence of a 2D Fermi surface i…
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We have studied the magnetotransport properties of the metallic, p-type Sb2Te2Se which is a topological insulator. Magnetoresistance shows Shubnikov de Haas oscillations in fields above B=15 T. The maxima/minima positions of oscillations measured at different tilt angles with respect to the B direction align with the normal component of field Bcosine, implying the existence of a 2D Fermi surface in Sb2Te2Se. The value of the Berry phase determined from a Landau level fan diagram is very close to 0.5, further suggesting that the oscillations result from topological surface states. From Lifshitz-Kosevich analyses, the position of the Fermi level is found to be EF =250 meV, above the Dirac point. This value of EF is almost 3 times as large as that in our previous study on the Bi2Se2:1Te0:9 topological insulator; however, it still touches the tip of the bulk valence band. This explains the metallic behavior and hole-like bulk charge carriers in the Sb2Te2Se compound.
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Submitted 5 January, 2017;
originally announced January 2017.
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Shubnikov-de Haas oscillations from topological surface states of metallic Bi$_2$Se$_{2.1}$Te$_{0.9}$
Authors:
Keshav Shrestha,
Vera Marinova,
Bernd Lorenz,
Paul C. W. Chu
Abstract:
We have studied the quantum oscillations in the conductivity of metallic, p-type Bi$_2$Se$_{2.1}$Te$_{0.9}$. The dependence of the oscillations on the angle of the magnetic field with the surface as well as the Berry phase determined from the Landau level fan plot indicate that the observed oscillations arise from surface carriers with the characteristic Dirac dispersion. Several quantities charac…
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We have studied the quantum oscillations in the conductivity of metallic, p-type Bi$_2$Se$_{2.1}$Te$_{0.9}$. The dependence of the oscillations on the angle of the magnetic field with the surface as well as the Berry phase determined from the Landau level fan plot indicate that the observed oscillations arise from surface carriers with the characteristic Dirac dispersion. Several quantities characterizing the surface conduction are calculated employing the Lifshitz-Kosevich theory. The low value of the Fermi energy with respect to the Dirac point is consistent with the metallic character of the bulk hole carriers. We conclude that, due to the peculiar shape of the valence band, the Shubnikov-de Haas oscillations of the bulk carriers are shifted to higher magnetic fields which allows for the detection of the quantum oscillations from the topological surface states at lower field.
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Submitted 11 December, 2014;
originally announced December 2014.
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Fingerprints of Inelastic Transport at the Surface of the Topological Insulator Bi2Se3: Role of Electron-Phonon Coupling
Authors:
M. V. Costache,
I. Neumann,
J. F. Sierra,
V. Marinova,
M. M. Gospodinov,
S. Roche,
S. O. Valenzuela
Abstract:
We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of t…
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We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of the current with voltage is obtained up to a threshold value at which current saturation takes place. We show that the activated behavior, the voltage threshold and the saturation current can all be quantitatively explained by considering a single optical phonon mode with energy $\hbar Ω\approx 8$ meV. This phonon mode strongly interacts with the surface states of the material and represents the dominant source of scattering at the surface at high electric fields.
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Submitted 8 April, 2014;
originally announced April 2014.
