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Dual-wavelength femtosecond laser-induced low-fluence single-shot damage and ablation of silicon
Authors:
Alexander V. Bulgakov,
Juraj Sládek,
Jan Hrabovský,
Inam Mirza,
Wladimir Marine,
Nadezhda M. Bulgakova
Abstract:
A study of damage and ablation of silicon induced by two individual femtosecond laser pulses of different wavelengths, 1030 and 515 nm, is performed to address the physical mechanisms of dual-wavelength ablation and reveal possibilities for increasing the ablation efficiency. The produced ablation craters and damaged areas are analyzed as a function of time separation between the pulses and are co…
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A study of damage and ablation of silicon induced by two individual femtosecond laser pulses of different wavelengths, 1030 and 515 nm, is performed to address the physical mechanisms of dual-wavelength ablation and reveal possibilities for increasing the ablation efficiency. The produced ablation craters and damaged areas are analyzed as a function of time separation between the pulses and are compared with monochromatic pulses of the same total energy. Particular attention is given to low-fluence irradiation regimes when the energy densities in each pulse are below the ablation threshold and thus no shielding of the subsequent pulse by the ablation products occurs. The sequence order of pulses is demonstrated to be essential in bi-color ablation with higher material removal rates when a shorter-wavelength pulse arrives first at the surface. At long delays of 30-100 ps, the dual-wavelength ablation is found to be particularly strong with the formation of deep smooth craters. This is explained by the expansion of a hot liquid layer produced by the first pulse with a drastic decrease in the surface reflectivity at this timescale. The results provide insight into the processes of dual-wavelength laser ablation offering a better control of the energy deposition into material.
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Submitted 24 February, 2024;
originally announced February 2024.
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Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors
Authors:
Alexander Bulgakov,
Anton Evtushenko,
Yuri Shukhov,
Igor Ozerov,
Wladimir Marine
Abstract:
A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR-and visible laser pulses with particular attention to cluster generation. Neutral and cationic Zn\_n O\_m and In\_n P\_m particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablat…
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A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR-and visible laser pulses with particular attention to cluster generation. Neutral and cationic Zn\_n O\_m and In\_n P\_m particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablation, large cationic (n>9) and all neutral clusters are mainly stoichiometric in the ablation plume. In contrast, indium phosphide clusters are strongly indium-rich with In\_4 P being a magic cluster. Analysis of the plume composition upon laser exposure has revealed congruent vaporization of ZnO and a disproportionate loss of phosphorus by the irradiated InP surface. Plume expansion conditions under ZnO ablation are shown to be favourable for stoichiometric cluster formation. A delayed vaporization of phosphorus under InP ablation has been observed that results in generation of off-stoichiometric clusters.
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Submitted 23 October, 2017;
originally announced October 2017.
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Picosecond laser structuration under high pressures: observation of boron nitride nanorods
Authors:
Luc Museur,
Jean Pierre Petitet,
Jean Pierre Michel,
Wladimir Marine,
Demetrios Anglos,
Costa Fotakis,
Andrei Kanaev
Abstract:
We report on picosecond UV-laser processing of hexagonal boron nitride (hBN) at moderately high pressures above 500 bar. The main effect is specific to the ambient gas and laser pulse duration in the ablation regime: when samples are irradiated by 5 ps or 0.45 ps laser pulses in nitrogen gas environment, multiple nucleation of a new crystalline product - BN nanorods - takes place. This process i…
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We report on picosecond UV-laser processing of hexagonal boron nitride (hBN) at moderately high pressures above 500 bar. The main effect is specific to the ambient gas and laser pulse duration in the ablation regime: when samples are irradiated by 5 ps or 0.45 ps laser pulses in nitrogen gas environment, multiple nucleation of a new crystalline product - BN nanorods - takes place. This process is triggered on structural defects, which number density strongly decreases upon recrystallization. Non-linear photon absorption by adsorbed nitrogen molecules is suggested to mediate the nucleation-growth. High pressure is responsible for the confinement and strong backscattering of ablation products. A strong surface structuring also appears at longer 150-ps laser irradiation in similar experimental conditions. However, the transformed product in this case is amorphous strongly contaminated by boron suboxides BxOy.
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Submitted 15 November, 2008;
originally announced November 2008.
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Incorporation of cobalt into ZnO nanoclusters
Authors:
Igor Ozerov,
Francoise Chabre,
Wladimir Marine
Abstract:
The structural, optical and magnetic properties of nanostructured ZnO films co-doped with cobalt and aluminium have been studied. The nanocrystalline films, with cluster sizes in range 50 - 100 nm, were deposited by pulsed laser ablation in a mixed atmosphere of oxygen and helium. The nanocrystallites have the wurtzite structure and are highly oriented with the c-axis perpendicular to the substr…
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The structural, optical and magnetic properties of nanostructured ZnO films co-doped with cobalt and aluminium have been studied. The nanocrystalline films, with cluster sizes in range 50 - 100 nm, were deposited by pulsed laser ablation in a mixed atmosphere of oxygen and helium. The nanocrystallites have the wurtzite structure and are highly oriented with the c-axis perpendicular to the substrate. Both optical and electron spin resonance (ESR) spectroscopy results show the substitutional incorporation of Co$^{2+}$ ions on the Zn site inside the ZnO nanoclusters. The temperature dependence of the ESR spectra follows Curie law corresponding to a paramagnetic material.
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Submitted 1 July, 2005;
originally announced July 2005.
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Production of Gas Phase Zinc Oxide Nanoclusters by Pulsed Laser Ablation
Authors:
Igor Ozerov,
Alexander V. Bulgakov,
Dmitry K. Nelson,
Ricardo Castell,
Wladimir Marine
Abstract:
We present experimental results on the photoluminescence (PL) of gas-suspended zinc oxide nanoclusters prepared during ablation of sintered ZnO targets by a pulsed ArF laser in the presence of oxygen ambient gas. The PL spectra in the UV spectral region correspond to the exciton recombination in the nanoclusters which are crystallized and cooled down to the temperature of the ambient gas in the…
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We present experimental results on the photoluminescence (PL) of gas-suspended zinc oxide nanoclusters prepared during ablation of sintered ZnO targets by a pulsed ArF laser in the presence of oxygen ambient gas. The PL spectra in the UV spectral region correspond to the exciton recombination in the nanoclusters which are crystallized and cooled down to the temperature of the ambient gas in the ablation chamber. The time evolution of the spectra as well as their dependence on the ambient gas pressure are discussed.
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Submitted 10 June, 2004;
originally announced June 2004.
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Phosphorus cluster production by laser ablation
Authors:
A. V. Bulgakov,
O. F. Bobrenok,
Igor Ozerov,
W. Marine,
S. Giorgio,
A. Lassesson,
E. E. B. Campbell
Abstract:
Neutral and charged phosphorus clusters of a wide size range have been produced by pulsed laser ablation (PLA) in vacuum at 532, 337, and 193 nm ablating wavelengths and investigated by time-of-flight mass spectrometry. The neutral P_n clusters are even-numbered with local abundance maxima at n = 10 and 14, while the cationic and anionic clusters are preferentially odd-numbered with (P_7)+, (P_2…
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Neutral and charged phosphorus clusters of a wide size range have been produced by pulsed laser ablation (PLA) in vacuum at 532, 337, and 193 nm ablating wavelengths and investigated by time-of-flight mass spectrometry. The neutral P_n clusters are even-numbered with local abundance maxima at n = 10 and 14, while the cationic and anionic clusters are preferentially odd-numbered with (P_7)+, (P_21)+, and (P_17)- being the most abundant ions. The dominance of the magic clusters is more pronounced at 337-nm ablation that is explained by efficient direct ejection of their building blocks under these conditions. Nanocrystalline phosphorus films have been produced by PLA in ambient helium gas.
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Submitted 5 April, 2004;
originally announced April 2004.
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Electronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: Experiment and modeling
Authors:
Wladimir Marine,
Nadezhda M. Bulgakova,
Lionel Patrone,
Igor Ozerov
Abstract:
We present experimental and modeling studies of UV nanosecond pulsed laser desorption and ablation of (111) bulk silicon. The results involve a new approach to the analysis of plume formation dynamics under high-energy photon irradiation of the semiconductor surface. Non-thermal, photo-induced desorption has been observed at low laser fluence, well below the melting threshold. Under ablation con…
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We present experimental and modeling studies of UV nanosecond pulsed laser desorption and ablation of (111) bulk silicon. The results involve a new approach to the analysis of plume formation dynamics under high-energy photon irradiation of the semiconductor surface. Non-thermal, photo-induced desorption has been observed at low laser fluence, well below the melting threshold. Under ablation conditions, the non-thermal ions have also a high concentration. The origin of these ions is discussed on the basis of electronic excitation of Si surface states associated with the Coulomb explosion mechanism. We present a model describing dynamics of silicon target excitation, heating and harge-carrier transport.
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Submitted 14 March, 2004; v1 submitted 12 March, 2004;
originally announced March 2004.
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Laser ablation synthesis of zinc oxide clusters: a new family of fullerenes?
Authors:
Alexander V. Bulgakov,
Igor Ozerov,
Wladimir Marine
Abstract:
Positively charged zinc oxide clusters ZnnOm (up to n = 16, m <= n) of various stoichiometry were synthesized in the gas phase by excimer ArF laser ablation of a ZnO target and investigated using time-of-flight mass spectrometry. Depending on ablation conditions, either metal rich or stoichiometric clusters dominate in the mass spectrum. When the irradiated target surface is fairly fresh, the mo…
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Positively charged zinc oxide clusters ZnnOm (up to n = 16, m <= n) of various stoichiometry were synthesized in the gas phase by excimer ArF laser ablation of a ZnO target and investigated using time-of-flight mass spectrometry. Depending on ablation conditions, either metal rich or stoichiometric clusters dominate in the mass spectrum. When the irradiated target surface is fairly fresh, the most abundant clusters are metal rich with Zn(n+1)On and Zn(n+3)On being the major series. The stoichiometric clusters are observed with an etched ablated surface. The magic numbers at n = 9, 11 and 15 in mass spectra of (ZnO)n clusters indicate that the clusters have hollow spheroid structures related to fullerenes. A local abundance minimum at n = 13 provides an additional evidence for the presence in the ablation plume of fullerene-like (ZnO)n clusters.
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Submitted 24 November, 2003;
originally announced November 2003.
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Cluster emission under femtosecond laser ablation of silicon
Authors:
Alexander V. Bulgakov,
Igor Ozerov,
Wladimir Marine
Abstract:
Rich populations of clusters have been observed after femtosecond laser ablation of bulk silicon in vacuum. Size and velocity distributions of the clusters as well as their charge states have been analyzed by reflectron time-of-flight mass spectrometry. An efficient emission of both neutral silicon clusters Sin (up to n = 6) and their cations Sin+ (up to n = 10) has been observed. The clusters a…
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Rich populations of clusters have been observed after femtosecond laser ablation of bulk silicon in vacuum. Size and velocity distributions of the clusters as well as their charge states have been analyzed by reflectron time-of-flight mass spectrometry. An efficient emission of both neutral silicon clusters Sin (up to n = 6) and their cations Sin+ (up to n = 10) has been observed. The clusters are formed even at very low laser fluences, below ablation threshold, and their relative yield increases with fluence. We show the dependencies of the cluster yield as well as the expansion dynamics on both laser wavelength and laser fluence. The mechanisms of the cluster formation are discussed.
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Submitted 10 March, 2004; v1 submitted 24 November, 2003;
originally announced November 2003.
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Interaction of UV photons with solid and nanocrystalline silicon
Authors:
Lionel Patrone,
Igor Ozerov,
Marc Sentis,
Wladimir Marine
Abstract:
The studies of interaction of the UV photons with bulk and nanocristalline silicon by time-of-flight (TOF) mass-spectrometry allowed to reveal two populations of Si ion monomers. The first rapid population ejected even at low laser fluences is attributed to Colombian repulsion between the surface charges which are induced by emission of the photoelectrons. When the laser fluence increases, the s…
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The studies of interaction of the UV photons with bulk and nanocristalline silicon by time-of-flight (TOF) mass-spectrometry allowed to reveal two populations of Si ion monomers. The first rapid population ejected even at low laser fluences is attributed to Colombian repulsion between the surface charges which are induced by emission of the photoelectrons. When the laser fluence increases, the second slow ion population appears. This population originates from the thermal processes in the irradiated material. The original result of this work is the observation of the non-thermal ion population which represents a considerable part of the laser-induced plume.
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Submitted 14 November, 2003;
originally announced November 2003.
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Synthesis and Laser Processing of ZnO Nanocrystalline Thin Films
Authors:
Igor Ozerov,
Dimitri Nelson,
Alexander V. Bulgakov,
Wladimir Marine,
Marc Sentis
Abstract:
We present the results of experiments on synthesis of ZnO nanoclusters by reactive pulsed laser deposition (PLD). The nanoclusters were formed and crystallized in the gas phase and deposited on SiO2 substrates. The nanostructured films were characterized by conventional photoluminescence (PL). The PL spectra consist of a narrow UV excitonic band and a broad visible band related to defects in the…
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We present the results of experiments on synthesis of ZnO nanoclusters by reactive pulsed laser deposition (PLD). The nanoclusters were formed and crystallized in the gas phase and deposited on SiO2 substrates. The nanostructured films were characterized by conventional photoluminescence (PL). The PL spectra consist of a narrow UV excitonic band and a broad visible band related to defects in the film. The film preparation conditions such as the substrate temperature, ambient gas nature and pressure, were optimized in order to increase the intensity of excitonic emission and prevent the formation of defects. A post-growth annealing by UV laser radiation improved the optical quality of the deposited films. The photoluminescence intensity was found to be dependent significantly on the laser fluence and on the number of shots per site. The nature of the defects responsible for the observed luminescence in a visible range is discussed.
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Submitted 13 November, 2003;
originally announced November 2003.
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Enhancement of Exciton Emission from Zno Nanocrystalline Films by Pulsed Laser Annealing
Authors:
Igor Ozerov,
Madjid Arab,
Viatcheslav I. Safarov,
Wladimir Marine,
Suzanne Giorgio,
Marc Sentis,
L. Nanai
Abstract:
Pulsed ArF laser annealing in air and in hydrogen atmosphere improves the optical properties of ZnO nanostructured films. Independently on the ambient atmosphere, laser annealing produces two major effects on the photoluminescence (PL) spectra: first, the efficiency of the exciton PL increases due to decrease of the number of non-radiative recombination centers; second, the intensity of the defe…
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Pulsed ArF laser annealing in air and in hydrogen atmosphere improves the optical properties of ZnO nanostructured films. Independently on the ambient atmosphere, laser annealing produces two major effects on the photoluminescence (PL) spectra: first, the efficiency of the exciton PL increases due to decrease of the number of non-radiative recombination centers; second, the intensity of the defect-related orange band decreases because of the removing of excessive oxygen trapped into the films during deposition. However, annealing in the ambient air also increases the intensity of the green band related to oxygen vacancies. We show that the combination of laser annealing and passivation of oxygen vacancies by hydrogen results in films free of defect-related emission and keeps intact their nanostructural character.
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Submitted 13 November, 2003;
originally announced November 2003.
