Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junction
Authors:
Stephen Margiotta,
Binzhi Liu,
Saleh Ahmed Khan,
Gabriel Calderon Ortiz,
Ahmed Ibreljic,
Jinwoo Hwang,
A F M Anhar Uddin Bhuiyan
Abstract:
In the rapidly evolving field of quantum computing, niobium nitride (NbN) superconductors have emerged as integral components due to their unique structural properties, including a high superconducting transition temperature (Tc), exceptional electrical conductivity, and compatibility with advanced device architectures. This study investigates the impact of high-temperature annealing and high-dose…
▽ More
In the rapidly evolving field of quantum computing, niobium nitride (NbN) superconductors have emerged as integral components due to their unique structural properties, including a high superconducting transition temperature (Tc), exceptional electrical conductivity, and compatibility with advanced device architectures. This study investigates the impact of high-temperature annealing and high-dose gamma irradiation on the structural and superconducting properties of NbN films grown on GaN via reactive DC magnetron sputtering. The as-deposited cubic δ-NbN (111) films exhibited a high-intensity XRD peak, high Tc of 12.82K, and an atomically flat surface. Annealing at 500 and 950 °C for varying durations revealed notable structural and surface changes. High-resolution STEM indicated improved local ordering, while AFM showed reduced surface roughness after annealing. XPS revealed a gradual increase in the Nb/N ratio with higher annealing temperatures and durations. High-resolution XRD and STEM analyses showed lattice constant modifications in δ-NbN films, attributed to residual stress changes following annealing. Additionally, XRD phi-scans revealed sixfold symmetry in NbN films due to rotational domains relative to GaN. While Tc remained stable after annealing at 500 °C, increasing the annealing temperature to 950 °C degraded Tc to ~8K and reduced the residual resistivity ratio from 0.85 in as-deposited films to 0.29 after 30 minutes. The effects of gamma radiation (5 Mrad (Si)) were also studied, demonstrating minimal changes to crystallinity and superconducting performance, indicating excellent radiation resilience. These findings highlight the potential of NbN superconductors for integration into advanced quantum devices and their suitability for applications in radiation-intensive environments such as space, satellites, and nuclear power plants.
△ Less
Submitted 28 May, 2025; v1 submitted 13 January, 2025;
originally announced January 2025.
LPCVD Grown Si-Doped $β$-Ga$_2$O$_3$ Films with Promising Electron Mobilities
Authors:
Saleh Ahmed Khan,
Ahmed Ibreljic,
Stephen Margiotta,
A F M Anhar Uddin Bhuiyan
Abstract:
We systematically investigated the growth of Si-doped $β$-Ga$_2$O$_3$ films using LPCVD system, achieving high electron mobilities of 162 cm$^2$/V.s and 149 cm$^2$/V.s at carrier concentrations of $1.51 \times 10^{17}$ cm$^{-3}$ and $1.15 \times 10^{17}$ cm$^{-3}$, respectively, for homoepitaxial (010) $β$-Ga$_2$O$_3$ films grown on $β$-Ga$_2$O$_3$ substrates and heteroepitaxial (-201) $β$-Ga$_2$O…
▽ More
We systematically investigated the growth of Si-doped $β$-Ga$_2$O$_3$ films using LPCVD system, achieving high electron mobilities of 162 cm$^2$/V.s and 149 cm$^2$/V.s at carrier concentrations of $1.51 \times 10^{17}$ cm$^{-3}$ and $1.15 \times 10^{17}$ cm$^{-3}$, respectively, for homoepitaxial (010) $β$-Ga$_2$O$_3$ films grown on $β$-Ga$_2$O$_3$ substrates and heteroepitaxial (-201) $β$-Ga$_2$O$_3$ films grown on off-axis c-sapphire substrates with 6° miscut, representing the highest mobilities reported for LPCVD-grown $β$-Ga$_2$O$_3$ materials. Carrier concentrations were precisely tuned by varying SiCl$_4$ flow rates at a growth temperature of 1000°C, resulting in concentrations ranging from $1.15 \times 10^{17}$ to $1.19 \times 10^{19}$ cm$^{-3}$, as confirmed by both Hall and C-V measurements. The films exhibited high crystalline quality, confirmed by high-resolution XRD and Raman spectroscopy, indicating phase purity and structural integrity. Surface morphologies characterized by FESEM and AFM imaging showed a strong correlation between carrier concentrations and surface smoothness, with lower concentrations resulting in reduced RMS roughness. SIMS analysis revealed uniform Si incorporation, with low carbon, hydrogen, and chlorine impurities below detection limits, indicating high purity of the films. A high low-temperature peak mobility exceeding 843 cm$^2$/V$\cdot$s was achieved for (-201) $β$-Ga$_2$O$_3$ films at 80 K, highlighting the high purity and low compensation of these films. These findings emphasize the potential of LPCVD growth system for producing high-purity $β$-Ga$_2$O$_3$ films with thickness ranging between ~2.3-11.7 $μ$m and faster growth rates (~4.7-17 $μ$m/hr), promising transport properties, controllable doping, and scalability for developing high power vertical devices.
△ Less
Submitted 11 January, 2025; v1 submitted 28 November, 2024;
originally announced December 2024.
