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Minute-long quantum coherence enabled by electrical depletion of magnetic noise
Authors:
Cyrus Zeledon,
Benjamin Pingault,
Jonathan C. Marcks,
Mykyta Onizhuk,
Yeghishe Tsaturyan,
Yu-xin Wang,
Benjamin S. Soloway,
Hiroshi Abe,
Misagh Ghezellou,
Jawad Ul-Hassan,
Takeshi Ohshima,
Nguyen T. Son,
F. Joseph Heremans,
Giulia Galli,
Christopher P. Anderson,
David D. Awschalom
Abstract:
Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor technology. We show, through bias control of an isotopically purified silicon carbide (SiC) p-i-n diode, the depletion of not only electrical noise sources but also magnetic noise sources, resulting in record coherences for…
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Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor technology. We show, through bias control of an isotopically purified silicon carbide (SiC) p-i-n diode, the depletion of not only electrical noise sources but also magnetic noise sources, resulting in record coherences for SiC electron spin qubits. We also uncover complementary improvements to the relaxation times of nuclear spin registers controllable by the defect, and measure diode-enhanced coherences. These improvements lead to record-long nuclear spin Hahn-echo times on the scale of minutes. These results demonstrate the power of materials control and electronic device integration to create highly coherent solid-state quantum network nodes and processors.
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Submitted 17 April, 2025;
originally announced April 2025.
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Valley Splitting Correlations Across a Silicon Quantum Well
Authors:
Jonathan C. Marcks,
Emily Eagen,
Emma C. Brann,
Merritt P. Losert,
Tali Oh,
John Reily,
Christopher S. Wang,
Daniel Keith,
Fahd A. Mohiyaddin,
Florian Luthi,
Matthew J. Curry,
Jiefei Zhang,
F. Joseph Heremans,
Mark Friesen,
Mark A. Eriksson
Abstract:
Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the…
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Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the Si/SiGe interfaces, and while Si devices are compatible with large-scale semiconductor manufacturing, achieving a uniformly large valley splitting energy across a many-qubit device spanning mesoscopic distances is an outstanding challenge. In this work we study valley splitting variations in a 1D quantum dot array manufactured by Intel. We observe correlations in valley splitting, at both sub-100nm (single gate) and >1μm (device) lengthscales, that are consistent with alloy disorder-dominated theory and simulation. Our results develop the mesoscopic understanding of Si/SiGe heterostructures necessary for scalable device design.
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Submitted 16 April, 2025;
originally announced April 2025.
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Nuclear Spin Engineering for Quantum Information Science
Authors:
Jonathan C. Marcks,
Benjamin Pingault,
Jiefei Zhang,
Cyrus Zeledon,
F. Joseph Heremans,
David D. Awschalom
Abstract:
Semiconductors are the backbone of modern technology, garnering decades of investment in high quality materials and devices. Electron spin systems in semiconductors, including atomic defects and quantum dots, have been demonstrated in the last two decades to host quantum coherent spin qubits, often with coherent spin-photon interfaces and proximal nuclear spins. These systems are at the center of…
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Semiconductors are the backbone of modern technology, garnering decades of investment in high quality materials and devices. Electron spin systems in semiconductors, including atomic defects and quantum dots, have been demonstrated in the last two decades to host quantum coherent spin qubits, often with coherent spin-photon interfaces and proximal nuclear spins. These systems are at the center of developing quantum technology. However, new material challenges arise when considering the isotopic composition of host and qubit systems. The isotopic composition governs the nature and concentration of nuclear spins, which naturally occur in leading host materials. These spins generate magnetic noise -- detrimental to qubit coherence -- but also show promise as local quantum memories and processors, necessitating careful engineering dependent on the targeted application. Reviewing recent experimental and theoretical progress towards understanding local nuclear spin environments in semiconductors, we show this aspect of material engineering as critical to quantum information technology.
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Submitted 25 February, 2025;
originally announced February 2025.
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Quantum spin probe of single charge dynamics
Authors:
Jonathan C. Marcks,
Mykyta Onizhuk,
Yu-Xin Wang,
Yizhi Zhu,
Yu Jin,
Benjamin S. Soloway,
Masaya Fukami,
Nazar Delegan,
F. Joseph Heremans,
Aashish A. Clerk,
Giulia Galli,
David D. Awschalom
Abstract:
Electronic defects in semiconductors form the basis for many emerging quantum technologies. Understanding defect spin and charge dynamics in solid state platforms is crucial to developing these building blocks, but many defect centers are difficult to access at the single-particle level due to the lack of sensitive readout techniques. A method for probing optically inactive spin defects would reve…
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Electronic defects in semiconductors form the basis for many emerging quantum technologies. Understanding defect spin and charge dynamics in solid state platforms is crucial to developing these building blocks, but many defect centers are difficult to access at the single-particle level due to the lack of sensitive readout techniques. A method for probing optically inactive spin defects would reveal semiconductor physics at the atomic scale and advance the study of new quantum systems. We exploit the intrinsic correlation between the charge and spin states of defect centers to measure defect charge populations and dynamics through the steady-state spin population, read-out at the single-defect level with a nearby optically active qubit. We directly measure ionization and charge relaxation of single dark defects in diamond, effects we do not have access to with traditional coherence-based quantum sensing. These spin resonance-based methods generalize to other solid state defect systems in relevant materials.
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Submitted 5 December, 2023;
originally announced December 2023.
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Quantifying the limits of controllability for the nitrogen-vacancy electron spin defect
Authors:
Paul Kairys,
Jonathan C. Marcks,
Nazar Delegan,
Jiefei Zhang,
David D. Awschalom,
F. Joseph Heremans
Abstract:
Solid-state electron spin qubits, like the nitrogen-vacancy center in diamond, rely on control sequences of population inversion to enhance sensitivity and improve device coherence. But even for this paradigmatic system, the fundamental limits of population inversion and potential impacts on applications like quantum sensing have not been assessed quantitatively. Here, we perform high accuracy sim…
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Solid-state electron spin qubits, like the nitrogen-vacancy center in diamond, rely on control sequences of population inversion to enhance sensitivity and improve device coherence. But even for this paradigmatic system, the fundamental limits of population inversion and potential impacts on applications like quantum sensing have not been assessed quantitatively. Here, we perform high accuracy simulations beyond the rotating wave approximation, including explicit unitary simulation of neighboring nuclear spins. Using quantum optimal control, we identify analytical pulses for the control of a qubit subspace within the spin-1 ground state and quantify the relationship between pulse complexity, control duration, and fidelity. We find exponentially increasing amplitude and bandwidth requirements with reduced control duration and further quantify the emergence of non-Markovian effects for multipulse sequences using sub-nanosecond population inversion. From this, we determine that the reduced fidelity and non-Markovianity is due to coherent interactions of the electron spin with the nuclear spin environment. Ultimately, we identify a potentially realizable regime of nanosecond control duration for high-fidelity multipulse sequences. These results provide key insights into the fundamental limits of quantum information processing using electron spin defects in diamond.
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Submitted 24 September, 2024; v1 submitted 6 September, 2023;
originally announced September 2023.
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Magnon-mediated qubit coupling determined via dissipation measurements
Authors:
Masaya Fukami,
Jonathan C. Marcks,
Denis R. Candido,
Leah R. Weiss,
Benjamin Soloway,
Sean E. Sullivan,
Nazar Delegan,
F. Joseph Heremans,
Michael E. Flatté,
David D. Awschalom
Abstract:
Controlled interaction between localized and delocalized solid-state spin systems offers a compelling platform for on-chip quantum information processing with quantum spintronics. Hybrid quantum systems (HQSs) of localized nitrogen-vacancy (NV) centers in diamond and delocalized magnon modes in ferrimagnets-systems with naturally commensurate energies-have recently attracted significant attention,…
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Controlled interaction between localized and delocalized solid-state spin systems offers a compelling platform for on-chip quantum information processing with quantum spintronics. Hybrid quantum systems (HQSs) of localized nitrogen-vacancy (NV) centers in diamond and delocalized magnon modes in ferrimagnets-systems with naturally commensurate energies-have recently attracted significant attention, especially for interconnecting isolated spin qubits at length-scales far beyond those set by the dipolar coupling. However, despite extensive theoretical efforts, there is a lack of experimental characterization of the magnon-mediated interaction between NV centers, which is necessary to develop such hybrid quantum architectures. Here, we experimentally determine the magnon-mediated NV-NV coupling from the magnon-induced self-energy of NV centers. Our results are quantitatively consistent with a model in which the NV center is coupled to magnons by dipolar interactions. This work provides a versatile tool to characterize HQSs in the absence of strong coupling, informing future efforts to engineer entangled solid-state systems.
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Submitted 22 August, 2023;
originally announced August 2023.
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Guiding Diamond Spin Qubit Growth with Computational Methods
Authors:
Jonathan C. Marcks,
Mykyta Onizhuk,
Nazar Delegan,
Yu-Xin Wang,
Masaya Fukami,
Maya Watts,
Aashish A. Clerk,
F. Joseph Heremans,
Giulia Galli,
David D. Awschalom
Abstract:
The nitrogen vacancy (NV) center in diamond, a well-studied, optically active spin defect, is the prototypical system in many state of the art quantum sensing and communication applications. In addition to the enticing properties intrinsic to the NV center, its diamond host's nuclear and electronic spin baths can be leveraged as resources for quantum information, rather than considered solely as s…
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The nitrogen vacancy (NV) center in diamond, a well-studied, optically active spin defect, is the prototypical system in many state of the art quantum sensing and communication applications. In addition to the enticing properties intrinsic to the NV center, its diamond host's nuclear and electronic spin baths can be leveraged as resources for quantum information, rather than considered solely as sources of decoherence. However, current synthesis approaches result in stochastic defect spin positions, reducing the technology's potential for deterministic control and yield of NV-spin bath systems, as well as scalability and integration with other technologies. Here, we demonstrate the use of theoretical calculations of electronic central spin decoherence as an integral part of an NV-spin bath synthesis workflow, providing a path forward for the quantitative design of NV center-based quantum sensing systems. We use computationally generated coherence data to characterize the properties of single NV center qubits across relevant growth parameters to find general trends in coherence time distributions dependent on spin bath dimensionality and density. We then build a maximum likelihood estimator with our theoretical model, enabling the characterization of a test sample through NV T2* measurements. Finally, we explore the impact of dimensionality on the yield of strongly coupled electron spin systems. The methods presented herein are general and applicable to other qubit platforms that can be appropriately simulated.
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Submitted 17 August, 2023;
originally announced August 2023.
