Showing 1–9 of 9 results for author: March, S

Characterization of band offsets in Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ alloys with varying Al composition

Authors: Jiyuan Zheng, Andrew H. Jones, Yaohua Tan, Ann K. Rockwell, Stephen March, Sheikh Z. Ahmed, Catherine A. Dukes, Avik W. Ghosh, Seth R. Bank, Joe C. Campbell

Abstract: The unprecedented wide bandgap tunability (~1 eV) of Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ latticed-matched to GaSb enables the fabrication of photodetectors over a wide range from near-infrared to mid-infrared. In this paper, the valence band-offsets in AlxIn1-xAsySb1-y with different Al compositions are analyzed by tight-binding calculations and X-ray photoelectron spectroscopy (XPS) measurements. Th… ▽ More The unprecedented wide bandgap tunability (~1 eV) of Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ latticed-matched to GaSb enables the fabrication of photodetectors over a wide range from near-infrared to mid-infrared. In this paper, the valence band-offsets in AlxIn1-xAsySb1-y with different Al compositions are analyzed by tight-binding calculations and X-ray photoelectron spectroscopy (XPS) measurements. The observed weak variation in valence band offsets is consistent with the lack of any minigaps in the valence band, compared to the conduction band. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Journal ref: Applied Physics Letters 115.12 (2019): 122105

Full band Monte Carlo simulation of AlInAsSb digital alloys

Authors: Jiyuan Zheng, Sheikh Z. Ahmed, Yuan Yuan, Andrew Jones, Yaohua Tan, Ann K. Rockwell, Stephen D. March, Seth R. Bank, Avik W. Ghosh, Joe C. Campbell

Abstract: Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this paper, we investigate the band structure-related mechanisms that influence impact ionization. Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization. Good agreemen… ▽ More Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this paper, we investigate the band structure-related mechanisms that influence impact ionization. Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Journal ref: InfoMat 2.6 (2020): 1236-1240

Ultrafast acoustic phonon scattering in CH$_3$NH$_3$PbI$_3$ revealed by femtosecond four-wave mixing

Authors: Samuel A. March, Drew B. Riley, Charlotte Clegg, Daniel Webber, Ian G. Hill, Zhi-Gang Yu, Kimberley C. Hall

Abstract: Carrier scattering processes are studied in CH$_3$NH$_3$PbI$_3$ using temperature-dependent four-wave mixing experiments. Our results indicate that scattering by ionized impurities limits the interband dephasing time (T$_2$) below 30~K, with strong electron-phonon scattering dominating at higher temperatures (with a timescale of 125 fs at 100 K). Our theoretical simulations provide quantitative ag… ▽ More Carrier scattering processes are studied in CH$_3$NH$_3$PbI$_3$ using temperature-dependent four-wave mixing experiments. Our results indicate that scattering by ionized impurities limits the interband dephasing time (T$_2$) below 30~K, with strong electron-phonon scattering dominating at higher temperatures (with a timescale of 125 fs at 100 K). Our theoretical simulations provide quantitative agreement with the measured carrier scattering rate and show that the rate of acoustic phonon scattering is enhanced by strong spin-orbit coupling, which modifies the band-edge density of states. The Rashba coefficient extracted from fitting the experimental results ($γ_c=2$ eV angstrom) is in agreement with calculations of the surface Rashba effect and recent experiments using the photogalvanic effect on thin films. △ Less

Submitted 15 July, 2019; originally announced July 2019.

Detection of Rashba spin splitting in 2D organic-inorganic perovskite via precessional carrier spin relaxation

Authors: Seth B. Todd, Drew B. Riley, Ali Binai-Motlagh, Charlotte Clegg, Ajan Ramachandran, Samuel A. March, Ian G. Hill, Constantinos C. Stoumpos, Mercouri G. Kanatzidis, Zhi-Gang Yu, Kimberley C. Hall

Abstract: The strong spin-orbit interaction in the organic-inorganic perovskites tied to the incorporation of heavy elements (\textit{e.g.} Pb, I) makes these materials interesting for applications in spintronics. Due to a lack of inversion symmetry associated with distortions of the metal-halide octahedra, the Rashba effect (used \textit{e.g.} in spin field-effect transistors and spin filters) has been pre… ▽ More The strong spin-orbit interaction in the organic-inorganic perovskites tied to the incorporation of heavy elements (\textit{e.g.} Pb, I) makes these materials interesting for applications in spintronics. Due to a lack of inversion symmetry associated with distortions of the metal-halide octahedra, the Rashba effect (used \textit{e.g.} in spin field-effect transistors and spin filters) has been predicted to be much larger in these materials than in traditional III-V semiconductors such as GaAs, supported by the recent observation of a near record Rashba spin splitting in CH$_3$NH$_3$PbBr$_3$ using angle-resolved photoemission spectroscopy (ARPES). More experimental studies are needed to confirm and quantify the presence of Rashba effects in the organic-inorganic perovskite family of materials. Here we apply time-resolved circular dichroism techniques to the study of carrier spin dynamics in a 2D perovskite thin film [(BA)$_2$MAPb$_2$I$_7$; BA = CH$_3$(CH$_2$)$_3$NH$_3$, MA = CH$_3$NH$_3$]. Our findings confirm the presence of a Rashba spin splitting via the dominance of precessional spin relaxation induced by the Rashba effective magnetic field. The size of the Rashba spin splitting in our system was extracted from simulations of the measured spin dynamics incorporating LO-phonon and electron-electron scattering, yielding a value of 10 meV at an electron energy of 50 meV above the band gap, representing a 20 times larger value than in GaAs quantum wells. △ Less

Submitted 27 July, 2018; originally announced July 2018.

Carrier Diffusion in Thin-Film CH3NH3PbI3 Perovskite Measured using Four-Wave Mixing

Authors: D. Webber, C. Clegg, A. W. Mason, S. A. March, I. G. Hill, K. C. Hall

Abstract: We report the application of femtosecond four-wave mixing (FWM) to the study of carrier transport in solution-processed CH3NH3PbI3. The diffusion coefficient was extracted through direct detection of the lateral diffusion of carriers utilizing the transient grating technique, coupled with simultaneous measurement of decay kinetics exploiting the versatility of the boxcar excitation beam geometry.… ▽ More We report the application of femtosecond four-wave mixing (FWM) to the study of carrier transport in solution-processed CH3NH3PbI3. The diffusion coefficient was extracted through direct detection of the lateral diffusion of carriers utilizing the transient grating technique, coupled with simultaneous measurement of decay kinetics exploiting the versatility of the boxcar excitation beam geometry. The observation of exponential decay of the transient grating versus interpulse delay indicates diffusive transport with negligible trapping within the first nanosecond following excitation. The in-plane transport geometry in our experiments enabled the diffusion length to be compared directly with the grain size, indicating that carriers move across multiple grain boundaries prior to recombination. Our experiments illustrate the broad utility of FWM spectroscopy for rapid characterization of macroscopic film transport properties. △ Less

Submitted 13 June, 2017; originally announced June 2017.

Simultaneous observation of free and defect-bound excitons in CH3NH3PbI3 using four-wave mixing spectroscopy

Authors: Samuel A. March, Charlotte Clegg, Drew B. Riley, Daniel Webber, Ian G. Hill, Kimberley C. Hall

Abstract: Solar cells incorporating organic-inorganic perovskite, which may be fabricated using low-cost solution-based processing, have witnessed a dramatic rise in efficiencies yet their fundamental photophysical properties are not well understood. The exciton binding energy, central to the charge collection process, has been the subject of considerable controversy due to subtleties in extracting it from… ▽ More Solar cells incorporating organic-inorganic perovskite, which may be fabricated using low-cost solution-based processing, have witnessed a dramatic rise in efficiencies yet their fundamental photophysical properties are not well understood. The exciton binding energy, central to the charge collection process, has been the subject of considerable controversy due to subtleties in extracting it from conventional linear spectroscopy techniques due to strong broadening tied to disorder. Here we report the simultaneous observation of free and defect-bound excitons in CH3NH3PbI3 films using four-wave mixing (FWM) spectroscopy. Due to the high sensitivity of FWM to excitons, tied to their longer coherence decay times than unbound electron-hole pairs, we show that the exciton resonance energies can be directly observed from the nonlinear optical spectra. Our results indicate low-temperature binding energies of 13 meV (29 meV) for the free (defect-bound) exciton, with the 16 meV localization energy for excitons attributed to binding to point defects. Our findings shed light on the wide range of binding energies (2-55 meV) reported in recent years. △ Less

Submitted 5 August, 2016; originally announced August 2016.

Journal ref: Scientific Reports 6, Article number: 39139 (2016)

Four-wave mixing in perovskite photovoltaic materials reveals long dephasing times and weaker many-body interactions than GaAs

Authors: Samuel A. March, Drew B. Riley, Charlotte Clegg, Daniel Webber, Xinyu Liu, Margaret Dobrowolska, Jacek K. Furdyna, Ian G. Hill, Kimberley C. Hall

Abstract: Perovksite semiconductors have shown promise for low-cost solar cells, lasers and photodetectors, yet their fundamental photophysical properties are not well understood. Recent observations of a low ($\sim$few meV) exciton binding energy and evidence of hot phonon effects in the room temperature phase suggest that perovskites are much closer to inorganic semiconductors than the absorber layers in… ▽ More Perovksite semiconductors have shown promise for low-cost solar cells, lasers and photodetectors, yet their fundamental photophysical properties are not well understood. Recent observations of a low ($\sim$few meV) exciton binding energy and evidence of hot phonon effects in the room temperature phase suggest that perovskites are much closer to inorganic semiconductors than the absorber layers in traditional organic photovoltaics, signaling the need for experiments that shed light on the placement of perovskite materials within the spectrum of semiconductors used in optoelectronics and photovoltaics. Here we use four-wave mixing (FWM) to contrast the coherent optical response of CH$_3$NH$_3$PbI$_3$ thin films and crystalline GaAs. At carrier densities relevant for solar cell operation, our results show that carriers interact surprisingly weakly via the Coulomb interaction in perovskite, much weaker than in inorganic semiconductors. These weak many-body effects lead to a dephasing time in CH$_3$NH$_3$PbI$_3$ $\sim$3 times longer than in GaAs. Our results also show that the strong enhancement of the exciton FWM signal tied to excitation-induced dephasing in GaAs and other III-V semiconductors does not occur in perovskite due to weak exciton-carrier scattering interactions. △ Less

Submitted 22 September, 2016; v1 submitted 16 February, 2016; originally announced February 2016.

Comments: Added 10 K results to previous version (Feb 16, 2016)

Journal ref: ACS Photonics, 2017, 4, 1515

Structural and ferromagnetic properties of an orthorhombic phase of MnBi stabilized with Rh additions

Authors: Valentin Taufour, Srinivasa Thimmaiah, Stephen March, Scott Saunders, Kewei Sun, Tej Nath Lamichhane, Matthew J. Kramer, Sergey L. Budko, Paul C. Canfield

Abstract: The article addresses the possibility of alloy elements in MnBi which may modify the thermodynamic stability of the NiAs-type structure without significantly degrading the magnetic properties. The addition of small amounts of Rh and Mn provides an improvement in the thermal stability with some degradation of the magnetic properties. The small amounts of Rh and Mn additions in MnBi stabilize an ort… ▽ More The article addresses the possibility of alloy elements in MnBi which may modify the thermodynamic stability of the NiAs-type structure without significantly degrading the magnetic properties. The addition of small amounts of Rh and Mn provides an improvement in the thermal stability with some degradation of the magnetic properties. The small amounts of Rh and Mn additions in MnBi stabilize an orthorhombic phase whose structural and magnetic properties are closely related to the ones of the previously reported high-temperature phase of MnBi (HT~MnBi). To date, the properties of the HT~MnBi, which is stable between $613$ and $719$~K, have not been studied in detail because of its transformation to the stable low-temperature MnBi (LT~MnBi), making measurements near and below its Curie temperature difficult. The Rh-stabilized MnBi with chemical formula Mn$_{1.0625-x}$Rh$_{x}$Bi [$x=0.02(1)$] adopts a new superstructure of the NiAs/Ni$_2$In structure family. It is ferromagnetic below a Curie temperature of $416$~K. The critical exponents of the ferromagnetic transition are not of the mean-field type but are closer to those associated with the Ising model in three dimensions. The magnetic anisotropy is uniaxial; the anisotropy energy is rather large, and it does not increase when raising the temperature, contrary to what happens in LT~MnBi. The saturation magnetization is approximately $3$~$μ_B$/f.u. at low temperatures. While this exact composition may not be application ready, it does show that alloying is a viable route to modifying the stability of this class of rare-earth-free magnet alloys. △ Less

Submitted 3 August, 2015; originally announced August 2015.

Comments: 9 pages, 10 figures

Journal ref: Phys. Rev. Applied 4, 014021 (2015)

Magnetic order in GdBiPt studied by x-ray resonant magnetic scattering

Authors: A. Kreyssig, M. G. Kim, J. W. Kim, S. M. Sauerbrei, S. D. March, G. R. Tesdall, S. L. Bud'ko, P. C. Canfield, R. J. McQueeney, A. I. Goldman

Abstract: Rare earth (R) half-Heusler compounds, RBiPt, exhibit a wide spectrum of novel ground states. Recently, GdBiPt has been proposed as a potential antiferromagnetic topological insulator (AFTI). We have employed x-ray resonant magnetic scattering to elucidate the microscopic details of the magnetic structure in GdBiPt below T_N = 8.5 K. Experiments at the Gd L_2 absorption edge show that the Gd momen… ▽ More Rare earth (R) half-Heusler compounds, RBiPt, exhibit a wide spectrum of novel ground states. Recently, GdBiPt has been proposed as a potential antiferromagnetic topological insulator (AFTI). We have employed x-ray resonant magnetic scattering to elucidate the microscopic details of the magnetic structure in GdBiPt below T_N = 8.5 K. Experiments at the Gd L_2 absorption edge show that the Gd moments order in an antiferromagnetic stacking along the cubic diagonal [1 1 1] direction satisfying the requirement for an AFTI, where both time-reversal symmetry and lattice translational symmetry are broken, but their product is conserved. △ Less

Submitted 15 September, 2011; originally announced September 2011.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 84, 220408(R) (2011)