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Viscous hydrodynamics of excitons in van der Waals heterostructures
Authors:
V. N. Mantsevich,
M. M. Glazov
Abstract:
Excitons in semiconductors can form a variety of collective states leading to different regimes of exciton propagation. Here we theoretically demonstrate the possibility to reach the viscous hydrodynamic -- liquid-like -- regime of exciton propagation in two-dimensional materials, focusing on the mono- and bi-layers of transition metal dichalcogenides. This regime can be realized where the exciton…
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Excitons in semiconductors can form a variety of collective states leading to different regimes of exciton propagation. Here we theoretically demonstrate the possibility to reach the viscous hydrodynamic -- liquid-like -- regime of exciton propagation in two-dimensional materials, focusing on the mono- and bi-layers of transition metal dichalcogenides. This regime can be realized where the exciton-exciton collisions dominate over exciton-phonon and disorder scattering. We have derived the hydrodynamic-like set of equations describing viscous flow of interacting excitons based on the Boltzmann kinetic equation for the exciton distribution function. A comparison of various exciton propagation regimes including diffusive, viscous hydrodynamic, and superfluid regime is presented. Conditions which allow one to observe the hydrodynamic regime of exciton transport, and the role of material are discussed.
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Submitted 19 August, 2024;
originally announced August 2024.
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Diffusion of fast and slow excitons with an exchange in quasi-two-dimensional systems
Authors:
Oluwafemi P. Adejumobi,
Vladimir N. Mantsevich,
Vladimir V. Palyulin
Abstract:
By means of analytical calculations and numerical simulations we study the diffusion properties in quasi-two-dimensional structures with two exciton subsystems with an exchange between them. The experimental realisation is possible in systems where fast and slow exciton subsystems appear. For substantially different diffusion coefficients of the species the negative diffusion can be observed, if o…
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By means of analytical calculations and numerical simulations we study the diffusion properties in quasi-two-dimensional structures with two exciton subsystems with an exchange between them. The experimental realisation is possible in systems where fast and slow exciton subsystems appear. For substantially different diffusion coefficients of the species the negative diffusion can be observed, if one measures the transport properties of only a single subsystem, just as was obtained in experimental studies for quasi-two-dimensional semiconductor systems. The initial transition from a fast subsystem to a slow one results in a delayed release of fast excitons in the area close to the original excitation spot. Hence, the signal from the fast excitons alone includes the delayed replenishment from the transition of slow quasi-particles. This is seen as the narrowing of the exciton density profile or decrease of mean-squared displacement which is then interpreted as a negative diffusion. The average diffusion coefficients for the combined population are analytically expressed through the diffusion coefficients of fast and slow excitons. Simple analytical expressions for effective diffusion coefficients obtained in limiting cases are of interest both for theoretical and experimental analysis of not only the exciton transport, but also for a variety of systems, where fast and slow moving subsystems are present.
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Submitted 17 July, 2024;
originally announced July 2024.
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Tunneling spin Nernst effect for a single quantum dot
Authors:
V. N. Mantsevich,
D. S. Smirnov
Abstract:
We describe theoretically the spin Nernst effect for electrons tunneling to a quantum dot from a quantum wire with the heat flowing along it. Such a tunneling spin Nernst effect is shown to take place due to the spin-dependent electron tunneling produced by the spin-orbit coupling. The Coulomb interaction of electrons in the quantum dot is taken into account using nonequilibrium Green's functions…
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We describe theoretically the spin Nernst effect for electrons tunneling to a quantum dot from a quantum wire with the heat flowing along it. Such a tunneling spin Nernst effect is shown to take place due to the spin-dependent electron tunneling produced by the spin-orbit coupling. The Coulomb interaction of electrons in the quantum dot is taken into account using nonequilibrium Green's functions and is shown to increase significantly the accumulated spin in a single quantum dot. The largest possible degree of spin polarization is discussed.
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Submitted 6 August, 2024; v1 submitted 22 December, 2023;
originally announced December 2023.
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Negative diffusion of excitons in quasi-two-dimensional systems
Authors:
Alerksandr A. Kurilovich,
Vladimir N. Mantsevich,
Aleksey V. Chechkin,
Vladimir V. Palyulin
Abstract:
We show how two different mobile-immobile type models explain the observation of negative diffusion of excitons reported in experimental studies in quasi-two-dimensional semiconductor systems. The main reason for the effect is the initial trapping and a delayed release of free excitons in the area close to the original excitation spot. The density of trapped excitons is not registered experimental…
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We show how two different mobile-immobile type models explain the observation of negative diffusion of excitons reported in experimental studies in quasi-two-dimensional semiconductor systems. The main reason for the effect is the initial trapping and a delayed release of free excitons in the area close to the original excitation spot. The density of trapped excitons is not registered experimentally. Hence, the signal from the free excitons alone includes the delayed release of not diffusing trapped particles. This is seen as the narrowing of the exciton density profile or decrease of mean-squared displacement which is then interpreted as a negative diffusion. The effect is enhanced with the increase of recombination intensity as well as the rate of the exciton-exciton binary interactions.
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Submitted 25 July, 2023;
originally announced July 2023.
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Kondo enhancement of current induced spin accumulation in a quantum dot
Authors:
V. N. Mantsevich,
D. S. Smirnov
Abstract:
Weak spin-orbit coupling produces very limited current induced spin accumulation in semiconductor nanostructures. We demonstrate a possibility to increase parametrically the spin polarization using the Kondo effect. As a model object we consider a quantum dot side coupled to a quantum wire taking into account the spin dependent electron tunneling from the wire to the dot. Using the nonequilibrium…
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Weak spin-orbit coupling produces very limited current induced spin accumulation in semiconductor nanostructures. We demonstrate a possibility to increase parametrically the spin polarization using the Kondo effect. As a model object we consider a quantum dot side coupled to a quantum wire taking into account the spin dependent electron tunneling from the wire to the dot. Using the nonequilibrium Green's functions, we show that the many body correlations between the quantum dot and the quantum wire can increase the current induced spin accumulation at low temperatures by almost two orders of magnitude for the moderate system parameters. The enhancement is related to the Kondo peak formation in the density of states and the spin instability due to the strong Coulomb interaction. This effect may be useful to electrically manipulate the localized electron spins in quantum dots for their quantum applications.
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Submitted 21 March, 2023;
originally announced March 2023.
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Current Induced Hole Spin Polarization in Quantum Dot via Chiral Quasi Bound State
Authors:
V. N. Mantsevich,
D. S. Smirnov
Abstract:
We put forward a mechanism for current induced spin polarization for a hole in a quantum dot side-coupled to a quantum wire, that is based on the spin-orbit splitting of the valence band. We predict that in a stark contrast with the traditional mechanisms based on the linear in momentum spin-orbit coupling, an exponentially small bias applied to the quantum wire with heavy holes is enough to creat…
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We put forward a mechanism for current induced spin polarization for a hole in a quantum dot side-coupled to a quantum wire, that is based on the spin-orbit splitting of the valence band. We predict that in a stark contrast with the traditional mechanisms based on the linear in momentum spin-orbit coupling, an exponentially small bias applied to the quantum wire with heavy holes is enough to create the 100% spin polarization of a localized light hole. Microscopically, the effect is related with the formation of chiral quasi bound states and the spin dependent tunneling of holes from the quantum wire to the quantum dot. This novel current induced spin polarization mechanism is equally relevant for the GaAs, Si and Ge based semiconductor nanostructures.
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Submitted 14 July, 2021;
originally announced July 2021.
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Complex diffusion-based kinetics of photoluminescence in semiconductor nanoplatelets
Authors:
Aleksandr A. Kurilovich,
Vladimir N. Mantsevich,
Keith J. Stevenson,
Aleksei V. Chechkin,
Vladimir V. Palyulin
Abstract:
We present a diffusion-based simulation and theoretical models for explanation of photoluminescence (PL) emission intensity in semiconductor nanoplatelets. It is shown that the shape of PL intensity curves can be reproduced by the interplay of recombination, diffusion and trapping of excitons. The emission intensity at short times is purely exponential and is defined by recombination. At long time…
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We present a diffusion-based simulation and theoretical models for explanation of photoluminescence (PL) emission intensity in semiconductor nanoplatelets. It is shown that the shape of PL intensity curves can be reproduced by the interplay of recombination, diffusion and trapping of excitons. The emission intensity at short times is purely exponential and is defined by recombination. At long times it is governed by the release of excitons from surface traps and is characterized by a power-law tail. We show that the crossover from one limit to another is controlled by diffusion properties. This intermediate region exhibits a rich behaviour depending on the value of diffusivity. Proposed approach reproduces all the features of experimental curves measured for different nanoplatelet systems.
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Submitted 17 January, 2021;
originally announced January 2021.
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Theory of optically detected spin noise in nanosystems
Authors:
D. S. Smirnov,
V. N. Mantsevich,
M. M. Glazov
Abstract:
Theory of spin noise in low dimensional systems and bulk semiconductors is reviewed. Spin noise is usually detected by optical means, continuously measuring the rotation angle of the polarization plane of the probe beam passing through the sample. Spin noise spectra yield rich information about the spin properties of the system including, for example, $g$-factors of the charge carriers, spin relax…
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Theory of spin noise in low dimensional systems and bulk semiconductors is reviewed. Spin noise is usually detected by optical means, continuously measuring the rotation angle of the polarization plane of the probe beam passing through the sample. Spin noise spectra yield rich information about the spin properties of the system including, for example, $g$-factors of the charge carriers, spin relaxation times, parameters of the hyperfine interaction, spin-orbit interaction constants, frequencies and widths of the optical resonances. The review describes basic models of spin noise, methods of its theoretical description, and their relation with the experimental results. We also discuss the relation between the spin noise spectroscopy, the strong and weak quantum measurements and the spin flip Raman scattering, and analyze similar effects including manifestations of the charge, current and valley polarization fluctuations in the optical response. Possible directions for further development of the spin noise spectroscopy are outlined.
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Submitted 29 October, 2020;
originally announced October 2020.
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Exciton-Exciton Interaction and Cascade Relaxation of Excitons in Colloidal CdSe Nanoplatelets
Authors:
Aleksandr M. Smirnov,
Anastasiya D. Golinskaya,
Bedil M. Saidzhonov,
Vladimir N. Mantsevich,
Vladimir S. Dneprovskii,
Roman B. Vasiliev
Abstract:
We experimentally investigated for the first time the lowest four band structure of Cd Se nanoplatelets at the r point of Brillouin zone [heavy-hole (hh), light-hole (lh) and two spin-orbital bands] and its modification due to the changing of the CdS shell thickness. The results of an experimental and theoretical study of exciton dynamics in colloidal CdSe/CdS nanoplateles are presented in the cas…
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We experimentally investigated for the first time the lowest four band structure of Cd Se nanoplatelets at the r point of Brillouin zone [heavy-hole (hh), light-hole (lh) and two spin-orbital bands] and its modification due to the changing of the CdS shell thickness. The results of an experimental and theoretical study of exciton dynamics in colloidal CdSe/CdS nanoplateles are presented in the case of stationary laser excitation. The excitation was performed by means of the powerful nanosecond laser and the pump and probe technique was utilized. The differential transmission spectra peculiarities
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Submitted 10 March, 2020;
originally announced March 2020.
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Universal power law decay of spin polarization in double quantum dot
Authors:
V. N. Mantsevich,
D. S. Smirnov
Abstract:
We study the spin dynamics and spin noise in a double quantum dot taking into account the interplay between hopping, exchange interaction and the hyperfine interaction. At short time scales the spin relaxation is governed by the spin dephasing in the random nuclear fields. At long time scales the spin polarization obeys universal power law $1/t$ independent of the relation between all the paramete…
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We study the spin dynamics and spin noise in a double quantum dot taking into account the interplay between hopping, exchange interaction and the hyperfine interaction. At short time scales the spin relaxation is governed by the spin dephasing in the random nuclear fields. At long time scales the spin polarization obeys universal power law $1/t$ independent of the relation between all the parameters of the system. This effect is related to the competition between the spin blockade effect and the hyperfine interaction. The spin noise spectrum of the system universally diverges as $\ln(1/ω)$ at low frequencies.
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Submitted 17 May, 2019;
originally announced May 2019.
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Nonlinear light absorption in colloidal CdSe/CdS nanoplatelets
Authors:
V. N. Mantsevich,
D. S. Smirnov,
A. M. Smirnov,
A. D. Golinskaya,
M. V. Kozlova,
B. M. Saidjonov,
V. S. Dneprovskii,
R. B. Vasiliev
Abstract:
We investigated the nonlinear optical properties of CdSe/CdS nanoplatelets in the vicinity of heavy hole and light hole exciton resonances. The two color pump-probe technique was applied. The first intense pulse created non-equilibrium exciton population, which was detected as a decrease of probe light absorption. We observed intense scattering of excitons between heavy- and light-hole excitonic s…
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We investigated the nonlinear optical properties of CdSe/CdS nanoplatelets in the vicinity of heavy hole and light hole exciton resonances. The two color pump-probe technique was applied. The first intense pulse created non-equilibrium exciton population, which was detected as a decrease of probe light absorption. We observed intense scattering of excitons between heavy- and light-hole excitonic states. We also studied experimentally saturation of absorption in nanoplatelets. Theoretical description of these phenomena allowed us to determine parameters of exciton dynamics in nanoplatelets.
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Submitted 2 July, 2018;
originally announced July 2018.
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Dynamic spin injection into a quantum well coupled to a spin-split bound state
Authors:
N. S. Maslova,
I. V. Rozhansky,
V. N. Mantsevich,
P. I. Arseyev,
N. S. Averkiev,
E. Lahderanta
Abstract:
We present a theoretical analysis of dynamic spin injection due to spin-dependent tunneling between a quantum well (QW) and a bound state split in spin projection due to an exchange interaction or external magnetic field. We focus on the impact of Coulomb correlations at the bound state on spin polarization and sheet density kinetics of the charge carriers in the QW. The theoretical approach is ba…
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We present a theoretical analysis of dynamic spin injection due to spin-dependent tunneling between a quantum well (QW) and a bound state split in spin projection due to an exchange interaction or external magnetic field. We focus on the impact of Coulomb correlations at the bound state on spin polarization and sheet density kinetics of the charge carriers in the QW. The theoretical approach is based on kinetic equations for the electron occupation numbers taking into account high order correlation functions for the bound state electrons. It is shown that the on-site Coulomb repulsion leads to an enhanced dynamic spin polarization of the electrons in the QW and a delay in the carriers tunneling into the bound state. The interplay of these two effects leads to non-trivial dependence of the spin polarization degree, which can be probed experimentally using time-resolved photoluminescence experiments. It is demonstrated that the influence of the Coulomb interactions can be controlled by adjusting the relaxation rates. These findings open a new way of studying the Hubbard-like electron interactions experimentally.
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Submitted 18 February, 2018;
originally announced February 2018.
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Comparison of pure and combined search strategies for single and multiple targets
Authors:
V. V. Palyulin,
Vladimir N. Mantsevich,
R. Klages,
R. Metzler,
A. V. Chechkin
Abstract:
We address the generic problem of random search for a point-like target on a line. Using the measures of search reliability and efficiency to quantify the random search quality, we compare Brownian search with Lévy search based on long-tailed jump length distributions. We then compare these results with a search process combined of two different long-tailed jump length distributions. Moreover, we…
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We address the generic problem of random search for a point-like target on a line. Using the measures of search reliability and efficiency to quantify the random search quality, we compare Brownian search with Lévy search based on long-tailed jump length distributions. We then compare these results with a search process combined of two different long-tailed jump length distributions. Moreover, we study the case of multiple targets located by a Lévy searcher.
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Submitted 31 October, 2017;
originally announced October 2017.
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Quenched dynamics of entangled states in correlated quantum dots
Authors:
N. S. Maslova,
P. I. Arseyev,
V. N. Mantsevich
Abstract:
Time evolution of initially prepared entangled state in the system of coupled quantum dots has been analyzed by means of two different theoretical approaches: equations of motion for the all orders localized electron correlation functions, considering interference effects, and kinetic equations for the pseudo-particle occupation numbers with constraint on the possible physical states. Results obta…
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Time evolution of initially prepared entangled state in the system of coupled quantum dots has been analyzed by means of two different theoretical approaches: equations of motion for the all orders localized electron correlation functions, considering interference effects, and kinetic equations for the pseudo-particle occupation numbers with constraint on the possible physical states. Results obtained by means of different approaches were carefully analyzed and compared with each other. Revealed direct link between concurrence (degree of entanglement) and quantum dots pair correlation functions allowed us to follow the changes of entanglement during time evolution of the coupled quantum dots system. It was demonstrated that the degree of entanglement can be controllably tuned during the time evolution of quantum dots system.
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Submitted 17 October, 2017;
originally announced October 2017.
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Non-stationary spin-filtering effects in correlated quantum dot
Authors:
V. N. Mantsevich,
N. S. Maslova,
P. I. Arseyev
Abstract:
The influence of external magnetic field switching $"$on$"$ and $"$off$"$ on the non-stationary spin-polarized currents in the system of correlated single-level quantum dot coupled to non-magnetic electronic reservoirs has been analyzed. It was shown that considered system can be used for the effective spin filtering by analyzing its non-stationary characteristics in particular range of applied bi…
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The influence of external magnetic field switching $"$on$"$ and $"$off$"$ on the non-stationary spin-polarized currents in the system of correlated single-level quantum dot coupled to non-magnetic electronic reservoirs has been analyzed. It was shown that considered system can be used for the effective spin filtering by analyzing its non-stationary characteristics in particular range of applied bias voltage.
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Submitted 5 May, 2017;
originally announced May 2017.
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Fluid photonic crystal from colloidal quantum dots
Authors:
Vladimir N. Mantsevich,
Sergey A. Tarasenko
Abstract:
We study optical forces acting upon semiconductor quantum dots and the force driven motion of the dots in a colloid. In the spectral range of exciton transitions in uantum dots, when the photon energy is close to the exciton energy, the polarizability of the dots is drastically increased. It leads to a resonant increase of both the gradient and the scattering contributions to the optical force, wh…
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We study optical forces acting upon semiconductor quantum dots and the force driven motion of the dots in a colloid. In the spectral range of exciton transitions in uantum dots, when the photon energy is close to the exciton energy, the polarizability of the dots is drastically increased. It leads to a resonant increase of both the gradient and the scattering contributions to the optical force, which enables the efficient manipulation with the dots. We reveal that the optical grating of the colloid leads to the formation of a fluid photonic crystal with spatially periodic circulating fluxes and density of the dots. Pronounced resonant dielectric response of semiconductor quantum dots enables a separation of the quantum dots with different exciton frequencies.
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Submitted 17 October, 2017; v1 submitted 8 January, 2017;
originally announced January 2017.
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Kondo correlations formation and the local magnetic moment dynamics in the Anderson model
Authors:
N. S. Maslova,
P. I. Arseyev,
V. N. Mantsevich
Abstract:
We investigated the typical time scales of the Kondo correlations formation for the single-state Anderson model, when coupling to the reservoir is switched on at the initial time moment. The influence of the Kondo effect appearance on the system non-stationary characteristics was analyzed and discussed.
We investigated the typical time scales of the Kondo correlations formation for the single-state Anderson model, when coupling to the reservoir is switched on at the initial time moment. The influence of the Kondo effect appearance on the system non-stationary characteristics was analyzed and discussed.
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Submitted 2 December, 2016;
originally announced December 2016.
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Diagnostics of many-particle electronic states from non-stationary currents and residual charge
Authors:
N. S. Maslova,
P. I. Arseyev,
V. N. Mantsevich
Abstract:
We propose the method for identifying many particle electronic states in the system of coupled quantum dots (impurities) with Coulomb correlations. We demonstrate that different electronic states can be distinguished by the complex analysis of localized charge dynamics and non-stationary characteristics. We show that localized charge time evolution strongly depends on the properties of initial sta…
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We propose the method for identifying many particle electronic states in the system of coupled quantum dots (impurities) with Coulomb correlations. We demonstrate that different electronic states can be distinguished by the complex analysis of localized charge dynamics and non-stationary characteristics. We show that localized charge time evolution strongly depends on the properties of initial state and analyze different time scales in charge kinetics for initially prepared singlet and triplet states. We reveal the conditions for existence of charge trapping effects governed by the selection rules for electron transitions between the states with different occupation numbers.
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Submitted 19 November, 2016;
originally announced November 2016.
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Control of the non-stationary spin-polarized tunneling currents by applied bias changing
Authors:
N. S. Maslova,
P. I. Arseyev,
V. N. Mantsevich
Abstract:
We reveal that for the single Anderson impurity localized between non-magnetic leads of the tunneling contact $"$magnetic$"$ state can be distinguished from the $"$paramagnetic$"$ one only by the analysis of the non-stationary system characteristics or the behavior of the second order correlation functions for the localized electrons occupation numbers. We investigate the response of the system to…
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We reveal that for the single Anderson impurity localized between non-magnetic leads of the tunneling contact $"$magnetic$"$ state can be distinguished from the $"$paramagnetic$"$ one only by the analysis of the non-stationary system characteristics or the behavior of the second order correlation functions for the localized electrons occupation numbers. We investigate the response of the system to the sudden shift of the applied bias and to the switching $"$on$"$ the coupling to the second lead of the tunneling contact. We demonstrate that in addition to the changes of the relaxation regimes and typical relaxation time scales, non-stationary spin-polarized currents flowing in the both leads are present in the system. Spin polarization and direction of the non-stationary currents in each lead can be simultaneously inverted by the sudden changing of the applied bias voltage.
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Submitted 14 July, 2016;
originally announced July 2016.
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Kinetics of local $"$magnetic$"$ moment and non-stationary spin-polarized current in the single impurity Anderson-model
Authors:
N. S. Maslova,
V. N. Mantsevich,
P. I. Arseyev
Abstract:
We perform theoretical investigation of the localized state dynamics in the presence of interaction with the reservoir and Coulomb correlations. We analyze kinetic equations for electron occupation numbers with different spins taking into account high order correlation functions for the localized electrons. We reveal that in the stationary state electron occupation numbers with the opposite spins…
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We perform theoretical investigation of the localized state dynamics in the presence of interaction with the reservoir and Coulomb correlations. We analyze kinetic equations for electron occupation numbers with different spins taking into account high order correlation functions for the localized electrons. We reveal that in the stationary state electron occupation numbers with the opposite spins always have the same value - the stationary state is a $"$paramagnetic$"$ one. $"$Magnetic$"$ properties can appear only in the non-stationary characteristics of the single-impurity Anderson model and in the dynamics of the localized electrons second order correlation functions. We found, that for deep energy levels and strong Coulomb correlations, relaxation time for initial $"$magnetic$"$ state can be several orders larger than for $"$paramagnetic$"$ one. So, long-living $"$magnetic$"$ moment can exist in the system. We also found non-stationary spin polarized currents flowing in opposite directions for the different spins in the particular time interval.
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Submitted 29 June, 2016;
originally announced June 2016.
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External field induced switching of tunneling current in the coupled quantum dots
Authors:
V. N. Mantsevich,
N. S. Maslova,
P. I. Arseyev
Abstract:
We investigated the tunneling current peculiarities in the system of two coupled by means of the external field quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. It was found that tuning of the external field frequency induces fast multiple tunneling current switching and leads to the negative tunneling conductivity. Special role of multi-electrons stat…
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We investigated the tunneling current peculiarities in the system of two coupled by means of the external field quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. It was found that tuning of the external field frequency induces fast multiple tunneling current switching and leads to the negative tunneling conductivity. Special role of multi-electrons states was demonstrated. Moreover we revealed conditions for bistable behavior of the tunneling current in the coupled QDs with Coulomb correlations.
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Submitted 24 July, 2014;
originally announced July 2014.
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Tunneling transport through multi-electrons states in coupled quantum dots with Coulomb correlations
Authors:
V. N. Mantsevich,
N. S. Maslova,
P. I. Arseyev
Abstract:
We investigated the peculiarities of non-equilibrium charge configurations in the system of two strongly coupled quantum dots (QDs) weakly connected to the reservoirs in the presence of Coulomb correlations. We revealed that total electron occupation demonstrates in some cases significant decreasing with increasing of applied bias - contrary to the situation when Coulomb correlations are absent an…
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We investigated the peculiarities of non-equilibrium charge configurations in the system of two strongly coupled quantum dots (QDs) weakly connected to the reservoirs in the presence of Coulomb correlations. We revealed that total electron occupation demonstrates in some cases significant decreasing with increasing of applied bias - contrary to the situation when Coulomb correlations are absent and found well pronounced ranges of system parameters where negative tunneling conductivity appears due to the Coulomb correlations.
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Submitted 2 July, 2014;
originally announced July 2014.
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Time evolution of an entangled initial state in coupled quantum dots with Coulomb correlations
Authors:
N. S. Maslova,
V. N. Mantsevich,
P. I. Arseyev
Abstract:
We analyzed the dynamics of the initial singlet electronic state in the two interacting single-level quantum dots (QDs) with Coulomb correlations, weakly tunnel coupled to an electronic reservoir. We obtained correlation functions of all orders for the electrons in the QDs by decoupling high-order correlations between localized and band electrons in the reservoir. We proved that for arbitrary mixe…
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We analyzed the dynamics of the initial singlet electronic state in the two interacting single-level quantum dots (QDs) with Coulomb correlations, weakly tunnel coupled to an electronic reservoir. We obtained correlation functions of all orders for the electrons in the QDs by decoupling high-order correlations between localized and band electrons in the reservoir. We proved that for arbitrary mixed state the concurrence and entanglement can be determined from the average value of particular combinations of electron's pair correlation functions. Analysis of the pair correlation functions time evolution allows to follow the changes of concurrence and entanglement during the relaxation processes. We investigated the dependence of concurrence on the value of Coulomb interaction and the energy levels spacing and found it's non-monotonic behavior in the non-resonant case. We also demonstrated that the behavior of pair correlation functions for two-electron entangled state in coupled QDs points to the fulfillment of the Hund's rule for the strong Coulomb interaction. We revealed the appearance of dynamical inverse occupation of the QDs energy levels during the relaxation processes. Our results open up further perspectives in solid state quantum information based on the controllable dynamics of the entangled electronic states.
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Submitted 15 May, 2014; v1 submitted 18 April, 2014;
originally announced April 2014.
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In situ visualization of Ni-Nb bulk metallic glasses phase transition
Authors:
A. I. Oreshkin,
V. N. Mantsevich,
S. V. Savinov,
S. I. Oreshkin,
V. I. Panov,
A. R. Yavari,
D. B. Miracle,
D. V. Louzguine-Luzgin
Abstract:
We report the results of the Ni-based bulk metallic glass structural evolution and crystallization behavior in situ investigation. The X-ray diffraction (XRD), transmission electron microscopy (TEM), nano-beam diffraction (NBD), differential scanning calorimetry (DSC), radial distribution function (RDF) and scanning probe microscopy/spectroscopy (STM/STS) techniques were applied to analyze the str…
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We report the results of the Ni-based bulk metallic glass structural evolution and crystallization behavior in situ investigation. The X-ray diffraction (XRD), transmission electron microscopy (TEM), nano-beam diffraction (NBD), differential scanning calorimetry (DSC), radial distribution function (RDF) and scanning probe microscopy/spectroscopy (STM/STS) techniques were applied to analyze the structure and electronic properties of Ni63.5Nb36.5 glasses before and after crystallization. It was proved that partial surface crystallization of Ni63.5Nb36.5 can occur at the temperature lower than for the full sample crystallization. According to our STM measurements the primary crystallization is originally starting with the Ni3Nb phase formation. It was shown that surface crystallization drastically differs from the bulk crystallization due to the possible surface reconstruction. The mechanism of Ni63.5Nb36.5 glass alloy 2D-crystallization was suggested, which corresponds to the local metastable (3x3)-Ni(111) surface phase formation. The possibility of different surface nano-structures development by the annealing of the originally glassy alloy in ultra high vacuum at the temperature lower, than the crystallization temperature was shown. The increase of mean square surface roughness parameter Rq while moving from glassy to fully crystallized state can be caused by concurrent growth of Ni3Nb and Ni6Nb7 bulk phases. The simple empirical model for the estimation of Ni63.5Nb36.5 cluster size was suggested, and the obtained values (7.64 A, 8.08 A) are in good agreement with STM measurements data (8 A-10 A).
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Submitted 13 February, 2013; v1 submitted 8 February, 2013;
originally announced February 2013.
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Non-stationary effects in the coupled quantum dots influenced by the electron-phonon interaction
Authors:
V. N. Mantsevich,
N. S. Maslova,
P. I. Arseyev
Abstract:
We analyzed time evolution of the localized charge in the system of two interacting single level quantum dots (QDs) coupled with the continuous spectrum states in the presence of electron-phonon interaction.
We demonstrated that electron-phonon interaction leads to the increasing of localized charge relaxation rate. We also found that several time scales with different relaxation rates appear in…
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We analyzed time evolution of the localized charge in the system of two interacting single level quantum dots (QDs) coupled with the continuous spectrum states in the presence of electron-phonon interaction.
We demonstrated that electron-phonon interaction leads to the increasing of localized charge relaxation rate. We also found that several time scales with different relaxation rates appear in the system in the case of non-resonant tunneling between the dots. We revealed the formation of oscillations in the filling numbers time evolution caused by the emission and adsorption processes of phonons.
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Submitted 6 December, 2012;
originally announced December 2012.
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Charge and spin configurations in the coupled quantum dots with Coulomb correlations induced by tunneling current
Authors:
P. I. Arseyev,
N. S. Maslova,
V. N. Mantsevich
Abstract:
We investigated the peculiarities of non-equilibrium charge states and spin configurations in the system of two strongly coupled quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. We analyzed the modification of non-equilibrium charge states and different spin configurations of the system in a wide range of applied bias voltage and revealed well pronounc…
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We investigated the peculiarities of non-equilibrium charge states and spin configurations in the system of two strongly coupled quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. We analyzed the modification of non-equilibrium charge states and different spin configurations of the system in a wide range of applied bias voltage and revealed well pronounced ranges of system parameters where negative tunneling conductivity appears due to the Coulomb correlations.
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Submitted 25 June, 2012;
originally announced June 2012.
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Non-stationary effects in the system of coupled quantum dots influenced by the Coulomb correlations
Authors:
P. I. Arseev,
N. S. Maslova,
V. N. Mantsevich
Abstract:
We found analytical solution for the time evolution of localized electron density in a system of two coupled single-level quantum dots (QDs) connected with continuous spectrum states in the presence of Coulomb interaction. This solution takes into account QD electrons correlation functions of all orders neglecting any correlations between localized and conduction electron filling numbers.
We dem…
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We found analytical solution for the time evolution of localized electron density in a system of two coupled single-level quantum dots (QDs) connected with continuous spectrum states in the presence of Coulomb interaction. This solution takes into account QD electrons correlation functions of all orders neglecting any correlations between localized and conduction electron filling numbers.
We demonstrated that several time scales with the strongly different relaxation rates appear in the system for a wide range of the Coulomb interaction value. We revealed that specific non monotonic behavior of charge relaxation in QD takes place due to Coulomb correlations.
We also found out that besides the usual charge oscillations with the period determined by the detuning between the energy levels of the QDs a new effect of period doubling appears in the presence of Coulomb interaction at particular range of the system parameters.
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Submitted 15 October, 2012; v1 submitted 8 June, 2012;
originally announced June 2012.
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Non-adiabatic electron charge pumping in coupled semiconductor quantum dots
Authors:
P. I. Arseyev,
N. S. Maslova,
V. N. Mantsevich
Abstract:
The possibility of non-adiabatic electron pumping in the system of three coupled quantum dots attached to the leads is discussed. We have found out that periodical changing of energy level position in the middle quantum dot results in non zero mean tunneling current appeared due to non-adiabatic non-equilibrium processes. The same principle can be used for fabrication of a new class of semiconduct…
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The possibility of non-adiabatic electron pumping in the system of three coupled quantum dots attached to the leads is discussed. We have found out that periodical changing of energy level position in the middle quantum dot results in non zero mean tunneling current appeared due to non-adiabatic non-equilibrium processes. The same principle can be used for fabrication of a new class of semiconductor electronic devices based on non-stationary non-equilibrium currents. As an example we propose a nanometer quantum emitter with non-stationary inverse level occupation achieved by electron pumping.
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Submitted 26 December, 2011;
originally announced December 2011.
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Localized charge bifurcation in the coupled quantum dots
Authors:
V. N. Mantsevich,
N. S. Maslova,
P. I. Arseyev
Abstract:
We analyzed theoretically localized charge relaxation in a double quantum dot (QD) system coupled with continuous spectrum states in the presence of localized electrons Coulomb interaction in a single QD. We have found that for a wide range of system parameters charge relaxation occurs through two stable regimes with significantly different relaxation rates. A peculiar time moment exists in the sy…
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We analyzed theoretically localized charge relaxation in a double quantum dot (QD) system coupled with continuous spectrum states in the presence of localized electrons Coulomb interaction in a single QD. We have found that for a wide range of system parameters charge relaxation occurs through two stable regimes with significantly different relaxation rates. A peculiar time moment exists in the system at which rapid switching between stable regimes takes place. We consider this phenomenon to be applicable for creation of active elements in nano-electronics based on the fast transition effect between two stable states.
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Submitted 31 May, 2012; v1 submitted 16 December, 2011;
originally announced December 2011.
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Coulomb correlations effects on localized charge relaxation in the coupled quantum dots
Authors:
P. I. Arseyev,
N. S. Maslova,
V. N. Mantsevich
Abstract:
We analyzed localized charge time evolution in the system of two interacting quantum dots (QD) (artificial molecule) coupled with the continuous spectrum states. We demonstrated that Coulomb interaction modifies relaxation rates and is responsible for non-monotonic time evolution of the localized charge. We suggested new mechanism of this non-monotonic charge time evolution connected with charge r…
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We analyzed localized charge time evolution in the system of two interacting quantum dots (QD) (artificial molecule) coupled with the continuous spectrum states. We demonstrated that Coulomb interaction modifies relaxation rates and is responsible for non-monotonic time evolution of the localized charge. We suggested new mechanism of this non-monotonic charge time evolution connected with charge redistribution between different relaxation channels in each QD.
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Submitted 31 May, 2012; v1 submitted 24 November, 2011;
originally announced November 2011.
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The effect of Coulomb correlations on non-equilibrium charge redistribution tuned by the tunneling current
Authors:
P. I. Arseyev,
N. S. Maslova,
V. N. Mantsevich
Abstract:
It was shown that tunneling current flowing through a system with Coulomb correlations leads to charge redistribution between the different localized states. Simple model consisting of two electron levels have been analyzed by means of Heisenberg motion equations taking into account all order correlations of electron filling numbers in localized states exactly. We consider various relations betwee…
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It was shown that tunneling current flowing through a system with Coulomb correlations leads to charge redistribution between the different localized states. Simple model consisting of two electron levels have been analyzed by means of Heisenberg motion equations taking into account all order correlations of electron filling numbers in localized states exactly. We consider various relations between Coulomb interaction and localized electron energies. Sudden jumps of electron density at each level in a certain range of applied bias have been found. We found that for some parameter range inverse occupation in the two-level system appeared due to Coulomb correlations. It was shown also that Coulomb correlations lead to appearance of negative tunneling conductivity at certain relation between the values of tunneling rates from the two electronic levels.
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Submitted 1 September, 2011;
originally announced September 2011.
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Correlation induced switching of local spatial charge distribution in two-level system
Authors:
P. I. Arseyev,
N. S. Maslova,
V. N. Mantsevich
Abstract:
We present theoretical investigation of spatial charge distribution in the two-level system with strong Coulomb correlations by means of Heisenberg equations analysis for localized states total electron filling numbers taking into account pair correlations of local electron density. It was found that tunneling current through nanometer scale structure with strongly coupled localized states causes…
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We present theoretical investigation of spatial charge distribution in the two-level system with strong Coulomb correlations by means of Heisenberg equations analysis for localized states total electron filling numbers taking into account pair correlations of local electron density. It was found that tunneling current through nanometer scale structure with strongly coupled localized states causes Coulomb correlations induced spatial redistribution of localized charges. Conditions for inverse occupation of two-level system in particular range of applied bias caused by Coulomb correlations have been revealed. We also discuss possibility of charge manipulation in the proposed system.
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Submitted 9 June, 2011;
originally announced June 2011.
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The influence of tunneling matrix elements modification due to on-site Coulomb interaction on local tunneling conductivity
Authors:
V. N. Mantsevich,
N. S. Maslova
Abstract:
Interplay between changes of energy levels and tunneling amplitudes caused by localized electrons on-site Coulomb interaction depending on non-equilibrium electron filling numbers is analyzed. Specific features of local tunneling conductivity spectra for different positions of localized states energy relative to the Fermi level have been investigated by means of self-consistent mean field approxim…
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Interplay between changes of energy levels and tunneling amplitudes caused by localized electrons on-site Coulomb interaction depending on non-equilibrium electron filling numbers is analyzed. Specific features of local tunneling conductivity spectra for different positions of localized states energy relative to the Fermi level have been investigated by means of self-consistent mean field approximation in the presence of non-equilibrium effects. The conditions when modifications of tunneling transfer amplitude due to changes of electron filling numbers in the presence of on-site Coulomb interaction should be taken into account in tunneling conductivity spectra have been revealed.
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Submitted 31 January, 2011; v1 submitted 9 December, 2010;
originally announced December 2010.
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Spatial distribution of local tunneling conductivity due to interference and Coulomb interaction effects for deep and shallow impurities on semiconductor surfaces
Authors:
V. N. Mantsevich,
N. S. Maslova
Abstract:
Spatial distribution of local tunneling conductivity was investigated for deep and shallow impurities on semiconductor surfaces. Non-equilibrium Coulomb interaction and interference effects were taken into account and analyzed theoretically with the help of Keldysh formalism. Two models were investigated: mean field self-consistent approach for shallow impurity state and Hubbard-{I} model for deep…
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Spatial distribution of local tunneling conductivity was investigated for deep and shallow impurities on semiconductor surfaces. Non-equilibrium Coulomb interaction and interference effects were taken into account and analyzed theoretically with the help of Keldysh formalism. Two models were investigated: mean field self-consistent approach for shallow impurity state and Hubbard-{I} model for deep impurity state. We have found that not only above the impurity but also at the distances comparable to the lattice period both effects interference between direct and resonant tunneling channels and on-site Coulomb repulsion of localized electrons strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS).
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Submitted 20 May, 2010;
originally announced May 2010.
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Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface
Authors:
V. N. Mantsevich,
N. S. Maslova
Abstract:
We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We…
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We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS) depending on the distance value from the impurity.
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Submitted 22 December, 2009;
originally announced December 2009.
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Spatial distribution of local density of states in vicinity of impurity on semiconductor surface
Authors:
V. N. Mantsevich,
N. S. Maslova
Abstract:
We present the results of detailed theoretical investigations of changes in local density of total electronic surface states in 2D anisotropic atomic semiconductor lattice in vicinity of impurity atom for a wide range of applied bias voltage. We have found that taking into account changes in density of continuous spectrum states leads to the formation of a downfall at the particular value of app…
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We present the results of detailed theoretical investigations of changes in local density of total electronic surface states in 2D anisotropic atomic semiconductor lattice in vicinity of impurity atom for a wide range of applied bias voltage. We have found that taking into account changes in density of continuous spectrum states leads to the formation of a downfall at the particular value of applied voltage when we are interested in the density of states above the impurity atom or even to a series of downfalls for the fixed value of the distance from the impurity. The behaviour of local density of states with increasing of the distance from impurity along the chain differs from behaviour in the direction perpendicular to the chain.
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Submitted 14 May, 2009;
originally announced May 2009.
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A crystal cleavage mechanism for UHV STM
Authors:
A. I. Oreshkin,
D. A. Muzychenko,
I. V. Radchenko,
V. N. Mantsevich,
V. I. Panov,
S. I. Oreshkin
Abstract:
A device for UHV cleavage of crystal specimens for the use with STM has been suggested and developed. We present a device suitable for the precise cleavage of semiconductors. The device needs only small space and can be easily mounted in a small and compact UHV chamber equipped with a wobble stick manipulator. In order to prove the technique UHV STM measurements on InAs(110) surfaces with differ…
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A device for UHV cleavage of crystal specimens for the use with STM has been suggested and developed. We present a device suitable for the precise cleavage of semiconductors. The device needs only small space and can be easily mounted in a small and compact UHV chamber equipped with a wobble stick manipulator. In order to prove the technique UHV STM measurements on InAs(110) surfaces with different bulk conductivities (p-and n-type) have been performed.
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Submitted 14 October, 2008;
originally announced October 2008.
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Tuning of tunneling current noise spectra singularities by localized states charging
Authors:
V. N. Mantsevich,
N. S. Maslova
Abstract:
We report the results of theoretical investigations of tunneling current noise spectra in a wide range of applied bias voltage. Localized states of individual impurity atoms play an important role in tunneling current noise formation. It was found that switching "on" and "off" of Coulomb interaction of conduction electrons with two charged localized states results in power law singularity of low…
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We report the results of theoretical investigations of tunneling current noise spectra in a wide range of applied bias voltage. Localized states of individual impurity atoms play an important role in tunneling current noise formation. It was found that switching "on" and "off" of Coulomb interaction of conduction electrons with two charged localized states results in power law singularity of low-frequency tunneling current noise spectrum ($1/f^α$) and also results on high frequency component of tunneling current spectra (singular peaks appear).
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Submitted 1 October, 2008;
originally announced October 2008.
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The influence of localized states charging on 1/f^α tunneling current noise spectrum
Authors:
V. N. Mantsevich,
N. S. Maslova
Abstract:
We report the results of theoretical investigations of low frequency tunneling current noise spectra component (1/f^α). Localized states of individual impurity atoms play the key role in low frequency tunneling current noise formation. It is found that switching "on" and "off" of Coulomb interaction of conduction electrons with one or two charged localized states results in power law singularity…
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We report the results of theoretical investigations of low frequency tunneling current noise spectra component (1/f^α). Localized states of individual impurity atoms play the key role in low frequency tunneling current noise formation. It is found that switching "on" and "off" of Coulomb interaction of conduction electrons with one or two charged localized states results in power law singularity of low-frequency tunneling current noise spectrum 1/f^α. Power law exponent in different low frequency ranges depends on the relative values of Coulomb interaction of conduction electrons with different charged impurities.
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Submitted 14 February, 2008;
originally announced February 2008.
