Complex impedance and Raman spectroscopy of Na$_{0.5}$(Bi$_{1-x}$Dy$_x$)$_{0.5}$TiO$_3$ ceramics
Authors:
Manal Benyoussef,
Moneim Zannen,
Jamal Belhadi,
Bouchaib Manoun,
Jean-Luc Dellis,
Abdelilah Lahmar,
Mimoun El Marssi
Abstract:
In this work structural refinement, complex impedance spectroscopy, and Raman spectroscopy have been investigated on Na$_{0.5}$(Bi$_{1-x}$Dy$_x$)$_{0.5}$TiO$_3$ (xDyNBT) ceramic systems. The pure NBT, 2DyNBT and 5DyNBT compounds crystallize in a rhombohedral structure while the 15DyNBT composition crystallizes in an orthorhombic Pnma structure. We reported that dysprosium addition affects the phas…
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In this work structural refinement, complex impedance spectroscopy, and Raman spectroscopy have been investigated on Na$_{0.5}$(Bi$_{1-x}$Dy$_x$)$_{0.5}$TiO$_3$ (xDyNBT) ceramic systems. The pure NBT, 2DyNBT and 5DyNBT compounds crystallize in a rhombohedral structure while the 15DyNBT composition crystallizes in an orthorhombic Pnma structure. We reported that dysprosium addition affects the phase transition temperatures as well as the dielectric losses. The electrical transport at high temperatures was investigated using the CIS over a wide frequency range. The studied samples showed a non-Debye type process, with a short-range relaxation for the pure NBT and a coexistence of both localized and long-range relaxations of charge carriers for the 2DyNBT and 5DyNBT compounds. For the high concentration, 15DyNBT, a short-range relaxation is observed. Moreover, using a brick-layer model we discuss the resistance and capacitance of the different contributors (grain and grain boundaries) in our samples. High temperature Raman spectroscopy investigation was performed in order to follow the temperature evolution of the structural transformations on ferroelectric compounds. Anomalies in the temperature evolution of the vibrational modes are seen to correlate well with the temperature transitions observed from dielectric measurements.
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Submitted 8 December, 2020;
originally announced December 2020.
Structural, dielectric, electrocaloric, and energy storage properties of lead free Ba$_{0.975}$La$_{0.017}$(ZrxTi$_{0.95-x}$)Sn$_{0.05}$O$_3$ (x = 0.05; 0.20) ceramics
Authors:
Sihem Smail,
Manal Benyoussef,
Kamel Taïbi,
Bouchai Manoun,
Mimoun El Marssi,
Abdelilah Lahmar
Abstract:
A-site deficient Ba$_{0.975}$La$_{0.017}$(ZrxTi$_{0.95-x}$)Sn$_{0.05}$O$_3$ (x = 0.05; 0.20) ceramics (BLaZ100xTS) were synthesized using the solid-state reaction. The microstructural study revealed a high density and low porosity in the studied ceramics. Besides, grain size lower than 1.5 micrometer was observed in the studied compounds, which is due to the incorporation of the rare earth element…
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A-site deficient Ba$_{0.975}$La$_{0.017}$(ZrxTi$_{0.95-x}$)Sn$_{0.05}$O$_3$ (x = 0.05; 0.20) ceramics (BLaZ100xTS) were synthesized using the solid-state reaction. The microstructural study revealed a high density and low porosity in the studied ceramics. Besides, grain size lower than 1.5 micrometer was observed in the studied compounds, which is due to the incorporation of the rare earth element (lanthanum). X-ray diffraction and Raman studies revealed that BLaZ5TS and BLaZ20TS crystallize in a perovskite-type structure with tetragonal and cubic symmetry, respectively. The dielectric study showed a normal ferroelectric-paraelectric phase transition for BLaZ5TS while a diffuse phase transition is noticed for BLaZ20TS sample. The energy-storage density and the associated energy efficiency were determined from the P-E loops versus temperature and the calculated values are comparable with results obtained on BCZT systems. Furthermore, the adiabatic temperature change (Delta)T was calculated through the indirect method and a relatively high value of (Delta)T/(Delta)E = 0.2 10-6 K m/V is obtained in BLaZ5TS system. The simultaneous presence of energy storage property and electrocaloric responsivity makes this system a promising environmentally friendly candidate for application in electronic devices.
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Submitted 8 December, 2020;
originally announced December 2020.