Showing 1–37 of 37 results for author: Mangler, C

Atomically clean free-standing two-dimensional materials through heating in ultra-high vacuum

Authors: Philipp Irschik, David Lamprecht, Shrirang Chokappa, Clemens Mangler, Carsten Speckmann, Thuy An Bui, Manuel Längle, Lado Filipovic, Jani Kotakoski

Abstract: Surface contamination not only influences but in some cases even dominates the measured properties of two-dimensional materials. Although different cleaning methods are often used for contamination removal, commonly used spectroscopic cleanliness assessment methods can leave the level of achieved cleanliness ambiguous. Despite two decades of research on 2D materials, the true cleanliness of the us… ▽ More Surface contamination not only influences but in some cases even dominates the measured properties of two-dimensional materials. Although different cleaning methods are often used for contamination removal, commonly used spectroscopic cleanliness assessment methods can leave the level of achieved cleanliness ambiguous. Despite two decades of research on 2D materials, the true cleanliness of the used samples is often left open to interpretation. In this work, freestanding monolayer graphene and hexagonal boron nitride are annealed at different temperatures in a custom-built ultra-high vacuum heating chamber, connected to a scanning transmission electron microscope via a vacuum transfer line, enabling atomically resolved cleanliness characterization as a function of annealing temperature, while eliminating the introduction of airborne contamination during sample transport. While annealing at 200 °C already reduces contamination significantly, it is not until 400 °C or higher, where over 90% of the free-standing monolayer areas are atomically clean. At this point, further contamination removal is mainly limited by defects in the material and metal contamination introduced during the sample transfer or growth. The achieved large, atomically clean areas can then be used for further nanoscale engineering steps or device processing, facilitating interaction with the material rather than contamination. △ Less

Submitted 27 August, 2025; v1 submitted 25 July, 2025; originally announced July 2025.

Comments: 48 pages, 4 figures in main text and 21 figures in supplement

Origin of circular and triangular pores in electron-irradiated hexagonal boron nitride

Authors: Umair Javed, Manuel Langle, Vladimir Zobac, Alexander Markevich, Clara Kofler, Martin Paul, Clemens Mangler, Toma Susi, Jani Kotakoski

Abstract: For nearly two decades, it has been known that electron irradiation of hexagonal boron nitride (hBN) in a transmission electron microscope leads to the formation of triangular pores. This has been attributed to the lower displacement threshold energy of boron, with or without the assistance of an inelastic scattering event, typically assuming that chemical etching caused by residual gases can be n… ▽ More For nearly two decades, it has been known that electron irradiation of hexagonal boron nitride (hBN) in a transmission electron microscope leads to the formation of triangular pores. This has been attributed to the lower displacement threshold energy of boron, with or without the assistance of an inelastic scattering event, typically assuming that chemical etching caused by residual gases can be neglected. In this study, in contrast to previous high-vacuum experiments, we show that electron irradiation in ultra-high vacuum leads to circular pores, whereas even small amounts of oxygen in the atmosphere during the experiment change the pores into triangles. Ab initio calculations show that oxygen atoms preferentially attach to boron at the pore edge, supporting the hypothesis that they are preferentially etched during irradiation, resulting in nitrogen-terminated triangular defects. Our results explain the origin of triangular pores in hBN and demonstrate a deterministic way to create atomically-defined pores into 2D materials. △ Less

Submitted 17 July, 2025; originally announced July 2025.

Comments: 13 pages; 10 figures and 2 tables

Self-ion implantation and structural relaxation in amorphous silicon

Authors: J. M. Gibson, Robe Elliman, T. Susi, C. Mangler

Abstract: Self-ion implantation amorphization is an established approach to study the structure and properties of amorphous silicon (a-Si). Fluctuation Electron Microscopy (FEM) has consistently observed Medium-Range Order (MRO) in this system that is not consistent with the Continuous Random Network (CRN) model. Using this technique we find that the degree of MRO first increases on thermal annealing and th… ▽ More Self-ion implantation amorphization is an established approach to study the structure and properties of amorphous silicon (a-Si). Fluctuation Electron Microscopy (FEM) has consistently observed Medium-Range Order (MRO) in this system that is not consistent with the Continuous Random Network (CRN) model. Using this technique we find that the degree of MRO first increases on thermal annealing and then decreases before finally recrystallizing. We discuss this new result in the light of previous experimental studies and recent theoretical observations on the favorability of the paracrystalline (PC) model over the CRN in a-Si. At ion doses far above the minimum required to amorphize, a high defect density is found in the PC phase, which anneals out at 500oC. The PC structure after 500oC annealing is independent of the initial implantation conditions and appears to represent a metastable and highly-ordered structure. Higher-temperature annealing causes a reduction in the degree of MRO and the structure approaches but does not reach a fully continuous random network before eventually crystallizing above 600oC. The effect of high dose implantation is to increase the defect density in the as-implanted state and the annealing of these defects is likely responsible for the large characteristic heat evolution at low temperature. △ Less

Submitted 24 July, 2025; v1 submitted 30 May, 2025; originally announced June 2025.

Journal ref: J. Appl. Phys. 138, 045303 (2025)

Uncovering the atomic structure of substitutional platinum dopants in MoS$_2$ with single-sideband ptychography

Authors: David Lamprecht, Anna Benzer, Manuel Längle, Mate Capin, Clemens Mangler, Toma Susi, Lado Filipovic, Jani Kotakoski

Abstract: We substitute individual Pt atoms into monolayer MoS$_2$ and study the resulting atomic structures with single-sideband (SSB) ptychography supported by ab initio simulations. We demonstrate that while high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) imaging provides excellent Z-contrast, distinguishing some defect types such as single and double sulfur vacanci… ▽ More We substitute individual Pt atoms into monolayer MoS$_2$ and study the resulting atomic structures with single-sideband (SSB) ptychography supported by ab initio simulations. We demonstrate that while high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) imaging provides excellent Z-contrast, distinguishing some defect types such as single and double sulfur vacancies remains challenging due to their low relative contrast difference. However, SSB with its nearly linear Z-contrast and high phase sensitivity enables reliable identification of these defect configurations as well as various Pt dopant structures at significantly lower electron doses. Our findings uncover the precise atomic placement and highlight the potential of SSB ptychography for detailed structural analysis of dopant-modified 2D materials while minimizing beam-induced damage, offering new pathways for understanding and engineering atomic-scale features in 2D systems. △ Less

Submitted 21 May, 2025; v1 submitted 17 February, 2025; originally announced February 2025.

Hexatic Phase in Covalent Two-Dimensional Silver Iodide

Authors: Thuy An Bui, David Lamprecht, Jacob Madsen, Marcin Kurpas, Peter Kotrusz, Alexander Markevich, Clemens Mangler, Jani Kotakoski, Lado Filipovic, Jannik C. Meyer, Timothy J. Pennycook, Viera Skakalova, Kimmo Mustonen

Abstract: According to the Kosterlitz-Thouless-Halperin-Nelson-Young (KTHNY) theory, the transition from a solid to liquid in two dimensions (2D) proceeds through an orientationally ordered liquid-crystal-like hexatic phase. While experiments have confirmed the KTHNY melting scenario in some 2D systems such as crystals of skyrmions and of noble gas atoms, no evidence has previously been found for it in cova… ▽ More According to the Kosterlitz-Thouless-Halperin-Nelson-Young (KTHNY) theory, the transition from a solid to liquid in two dimensions (2D) proceeds through an orientationally ordered liquid-crystal-like hexatic phase. While experiments have confirmed the KTHNY melting scenario in some 2D systems such as crystals of skyrmions and of noble gas atoms, no evidence has previously been found for it in covalently bonded 2D crystals. Here, 2D crystals of silver iodide embedded in multi-layer graphene are studied with in situ scanning transmission electron microscopy (STEM). Near the melting point, a highly dynamic state of AgI emerges that we show to be the first observation of the hexatic phase in covalent 2D materials. △ Less

Submitted 10 January, 2025; originally announced January 2025.

Corrugation-dominated mechanical softening of defect-engineered graphene

Authors: Wael Joudi, Rika Saskia Windisch, Alberto Trentino, Diana Propst, Jacob Madsen, Toma Susi, Clemens Mangler, Kimmo Mustonen, Florian Libisch, Jani Kotakoski

Abstract: We measure the two-dimensional elastic modulus $E^\text{2D}$ of atomically clean defect-engineered graphene with a known defect distribution and density in correlated ultra-high vacuum experiments. The vacancies are introduced via low-energy (< 200 eV) Ar ion irradiation and the atomic structure is obtained via semi-autonomous scanning transmission electron microscopy and image analysis. Based on… ▽ More We measure the two-dimensional elastic modulus $E^\text{2D}$ of atomically clean defect-engineered graphene with a known defect distribution and density in correlated ultra-high vacuum experiments. The vacancies are introduced via low-energy (< 200 eV) Ar ion irradiation and the atomic structure is obtained via semi-autonomous scanning transmission electron microscopy and image analysis. Based on atomic force microscopy nanoindentation measurements, a decrease of $E^\text{2D}$ from 286 to 158 N/m is observed when measuring the same graphene membrane before and after an ion irradiation-induced vacancy density of $1.0\times 10^{13}$ cm$^{-2}$. This decrease is significantly greater than what is predicted by most theoretical studies and in stark contrast to some measurements presented in the literature. With the assistance of atomistic simulations, we show that this softening is mostly due to corrugations caused by local strain at vacancies with two or more missing atoms, while the influence of single vacancies is negligible. We further demonstrate that the opposite effect can be measured when surface contamination is not removed before defect engineering △ Less

Submitted 31 March, 2025; v1 submitted 6 December, 2024; originally announced December 2024.

Comments: 16 pages, 10 figures

Electron-irradiation effects on monolayer MoS2 at elevated temperatures

Authors: Carsten Speckmann, Kimmo Mustonen, Diana Propst, Clemens Mangler, Jani Kotakoski

Abstract: The effect of electron irradiation on 2D materials is an important topic, both for the correct interpretation of electron microscopy experiments and for possible applications in electron lithography. After the importance of including inelastic scattering damage in theoretical models describing beam damage, and the lack of oxygen-sensitivity under electron irradiation in 2D MoS2 were recently shown… ▽ More The effect of electron irradiation on 2D materials is an important topic, both for the correct interpretation of electron microscopy experiments and for possible applications in electron lithography. After the importance of including inelastic scattering damage in theoretical models describing beam damage, and the lack of oxygen-sensitivity under electron irradiation in 2D MoS2 were recently shown, the role of temperature has remained unexplored on a quantitative level. Here we show the effect of temperature on both the creation of individual defects as well as the effect of temperature on defect dynamics. Based on the measured displacement cross section of sulphur atoms in MoS2 by atomic resolution scanning transmission electron microscopy, we find an increased probability for defect creation for temperatures up to 150°C, in accordance with theoretical predictions. However, higher temperatures lead to a decrease of the observed cross sections. Despite this apparent decrease, we find that the elevated temperature does not mitigate the creation of defects as this observation would suggest, but rather hides the created damage due to rapid thermal diffusion of the created vacancies before their detection, leading to the formation of vacancy lines and pores outside the measurement's field of view. Using the experimental data in combination with previously reported theoretical models for the displacement cross section, we estimate the migration energy barrier of sulphur vacancies in MoS2 to be 0.26 +- 0.13 eV. These results mark another step towards the complete understanding of electron beam damage in MoS2. △ Less

Submitted 15 January, 2025; v1 submitted 5 November, 2024; originally announced November 2024.

Comments: 7 pages, 4 figures

Electron-beam-induced adatom-vacancy-complexes in mono- and bilayer phosphorene

Authors: Carsten Speckmann, Andrea Angeletti, Lukáš Kývala, David Lamprecht, Felix Herterich, Clemens Mangler, Lado Filipovic, Christoph Dellago, Cesare Franchini, Jani Kotakoski

Abstract: Phosphorene, a puckered two-dimensional allotrope of phosphorus, has sparked considerable interest in recent years due to its potential especially for optoelectronic applications with its layer-number-dependant direct band gap and strongly bound excitons. However, detailed experimental characterization of its intrinsic defects as well as its defect creation characteristics under electron irradiati… ▽ More Phosphorene, a puckered two-dimensional allotrope of phosphorus, has sparked considerable interest in recent years due to its potential especially for optoelectronic applications with its layer-number-dependant direct band gap and strongly bound excitons. However, detailed experimental characterization of its intrinsic defects as well as its defect creation characteristics under electron irradiation are scarce. Here, we report on the creation and stability of a variety of defect configurations under 60 kV electron irradiation in mono- and bilayer phosphorene including the first experimental reports of stable adatom-vacancy-complexes. Displacement cross section measurements in bilayer phosphorene yield a value of 7.7 +- 1.4 barn with an estimated lifetime of adatom-vacancy-complexes of 19.9 +- 0.7 s, while some are stable for up to 68 s under continuous electron irradiation. Surprisingly, ab initio-based simulations indicate that the complexes should readily recombine, even in structures strained by up to 3 %. The presented results will help to improve the understanding of the wide variety of defects in phosphorene, their creation, and their stability, which may enable new pathways for defect engineered phosphorene devices. △ Less

Submitted 17 September, 2024; originally announced September 2024.

Comments: 11 pages, 7 figures

Defect-engineering hexagonal boron nitride using low-energy Ar+ irradiation

Authors: Manuel Längle, Barbara Maria Mayer, Jacob Madsen, Diana Propst, Arixin Bo, Clara Kofler, Vinzent Hana, Clemens Mangler, Toma Susi, Jani Kotakoski

Abstract: Monolayer hexagonal boron nitride (hBN) has recently become the focus of intense research as a material to host quantum emitters. Although it is well known that such emission is associated with point defects, so far no conclusive correlation between the spectra and specific defects has been demonstrated. Here, we prepare atomically clean suspended hBN samples and subject them to low-energy ion irr… ▽ More Monolayer hexagonal boron nitride (hBN) has recently become the focus of intense research as a material to host quantum emitters. Although it is well known that such emission is associated with point defects, so far no conclusive correlation between the spectra and specific defects has been demonstrated. Here, we prepare atomically clean suspended hBN samples and subject them to low-energy ion irradiation. The samples are characterized before and after irradiation via automated scanning transmission electron microscopy imaging to assess the defect concentrations and distributions. We find an intrinsic defect concentration of ca. 0.03/nm2 (with ca. 55% boron and 8% nitrogen single vacancies, 20% double vacancies and 16% more complex vacancy structures). To be able to differentiate between these and irradiation-induced defects, we create a significantly higher (but still moderate) concentration of defects with the ions (0.30/nm2), and now find ca. 55% boron and 12% nitrogen single vacancies, 14% double vacancies, and 18% more complex vacancy structures. The results demonstrate that already the simplest irradiation provides selectivity for the defect types, and open the way for future experiments to explore changing the selectivity by modifying the irradiation parameters. △ Less

Submitted 10 April, 2024; originally announced April 2024.

Comments: 7 pages, 4 figures

Two-dimensional few-atom noble gas clusters in a graphene sandwich

Authors: Manuel Längle, Kenichiro Mizohata, Clemens Mangler, Alberto Trentino, Kimmo Mustonen, E. Harriet Åhlgren, Jani Kotakoski

Abstract: Van der Waals atomic solids of noble gases on metals at cryogenic temperatures were the first experimental examples of two-dimensional systems. Recently such structures have also been created on surfaces under encapsulation by graphene, allowing studies at elevated temperatures through scanning tunneling microscopy. However, for this technique, the encapsulation layer often obscures the actual arr… ▽ More Van der Waals atomic solids of noble gases on metals at cryogenic temperatures were the first experimental examples of two-dimensional systems. Recently such structures have also been created on surfaces under encapsulation by graphene, allowing studies at elevated temperatures through scanning tunneling microscopy. However, for this technique, the encapsulation layer often obscures the actual arrangement of the noble gas atoms. Here, we create Kr and Xe clusters in between two suspended graphene layers, and uncover their atomic structure through direct imaging with transmission electron microscopy. We show that small crystals (N<9) arrange as expected based on the simple non-directional van der Waals interaction. Crystals larger than this show some deviations for the outermost atoms, possibly enabled by deformations in the encapsulating graphene lattice. We further discuss the dynamics of the clusters within the graphene sandwich, and show that while all Xe clusters with up to N~100 remain solid, Kr clusters with already N~16 turn occasionally fluid under our experimental conditions with an estimated pressure of ca. 0.3 GPa. This study opens a way for the so-far unexplored frontier of encapsulated two-dimensional van der Waals solids with exciting possibilities for fundamental condensed matter physics research and possible applications in quantum information technology. △ Less

Submitted 18 August, 2023; v1 submitted 27 June, 2023; originally announced June 2023.

Comments: 31 pages, 14 figures, including the supplement

Creation of single vacancies in hBN with electron irradiation

Authors: Thuy An Bui, Gregor T. Leuthner, Jacob Madsen, Mohammad R. A. Monazam, Alexandru I. Chirita, Andreas Postl, Clemens Mangler, Jani Kotakoski, Toma Susi

Abstract: Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections of monolayer hBN are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 5… ▽ More Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections of monolayer hBN are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 50 and 90 keV. Damage rates below 80 keV are up to three orders of magnitude lower than previously measured at edges under poorer residual vacuum conditions where chemical etching appears to have been dominant. Notably, is possible to create single vacancies in hBN using electron irradiation, with boron almost twice as likely as nitrogen to be ejected below 80 keV. Moreover, any damage at such low energies cannot be explained by elastic knock-on, even when accounting for vibrations of the atoms. A theoretical description is developed to account for lowering of the displacement threshold due to valence ionization resulting from inelastic scattering of probe electrons, modelled using charge-constrained density functional theory molecular dynamics. Although significant reductions are found depending on the constrained charge, quantitative predictions for realistic ionization states are currently not possible. Nonetheless, there is potential for defect-engineering of hBN at the level of single vacancies using electron irradiation. △ Less

Submitted 16 May, 2023; v1 submitted 1 March, 2023; originally announced March 2023.

Comments: 38 pages, 15 figures

Combined electronic excitation and knock-on damage in monolayer MoS2

Authors: Carsten Speckmann, Julia Lang, Jacob Madsen, Mohammad Reza Ahmadpour Monazam, Georg Zagler, Gregor T. Leuthner, Niall McEvoy, Clemens Mangler, Toma Susi, Jani Kotakoski

Abstract: Electron irradiation-induced damage is often the limiting factor in imaging materials prone to ionization or electronic excitations due to inelastic electron scattering. Quantifying the related processes at the atomic scale has only become possible with the advent of aberration-corrected (scanning) transmission electron microscopes and two-dimensional materials that allow imaging each lattice atom… ▽ More Electron irradiation-induced damage is often the limiting factor in imaging materials prone to ionization or electronic excitations due to inelastic electron scattering. Quantifying the related processes at the atomic scale has only become possible with the advent of aberration-corrected (scanning) transmission electron microscopes and two-dimensional materials that allow imaging each lattice atom. While it has been shown for graphene that pure knock-on damage arising from elastic scattering is sufficient to describe the observed damage, the situation is more complicated with two-dimensional semiconducting materials such as MoS2. Here, we measure the displacement cross section for sulfur atoms in MoS2 with primary beam energies between 55 and 90 keV, and correlate the results with existing measurements and theoretical models. Our experimental data suggests that the displacement process can occur from the ground state, or with single or multiple excitations, all caused by the same impinging electron. The results bring light to reports in the recent literature, and add necessary experimental data for a comprehensive description of electron irradiation damage in a two-dimensional semiconducting material. Specifically, the results agree with a combined inelastic and elastic damage mechanism at intermediate energies, in addition to a pure elastic mechanism that dominates above 80 keV. When the inelastic contribution is assumed to arise through impact ionization, the associated excitation lifetime is on the order of picoseconds, on par with expected excitation lifetimes in MoS2, whereas it drops to some tens of femtoseconds when direct valence excitation is considered. △ Less

Submitted 27 February, 2023; v1 submitted 21 February, 2023; originally announced February 2023.

Comments: 19 pages, 4 figures, 1 table

Atomic-scale Oxygen-mediated Etching of 2D MoS$_2$ and MoTe$_2$

Authors: E. Harriet Åhlgren, Alexander Markevich, Sophie Scharinger, Bernhard Fickl, Georg Zagler, Felix Herterich, Niall McEvoy, Clemens Mangler, Jani Kotakoski

Abstract: Some of the materials are more affected by oxidation than others. To elucidate the oxidation-induced degradation mechanisms in transition metal chalcogenides, the chemical effects in single layer MoS$_2$ and MoTe$_2$ were studied in situ in an electron microscope under controlled low-pressure oxygen environments at room temperature.Oxidation is the main cause of degradation of many two-dimensional… ▽ More Some of the materials are more affected by oxidation than others. To elucidate the oxidation-induced degradation mechanisms in transition metal chalcogenides, the chemical effects in single layer MoS$_2$ and MoTe$_2$ were studied in situ in an electron microscope under controlled low-pressure oxygen environments at room temperature.Oxidation is the main cause of degradation of many two-dimensional materials, including transition metal dichalcogenides, under ambient conditions. MoTe$_2$ is found to be reactive to oxygen, leading to significant degradation above a pressure of 1$\times 10^{-7}$ torr. Curiously, the common hydrocarbon contamination found on practically all surfaces accelerates the damage rate significantly, by up to a factor of forty. In contrast to MoTe$_2$, MoS$_2$ is found to be inert under oxygen environment, with all observed structural changes being caused by electron irradiation only, leading to well-defined pores with high proportion of molybdenum nanowire-terminated edges. Using density functional theory calculations, a further atomic-scale mechanism leading to the observed oxygen-related degradation in MoTe$_2$ is proposed and the role of the carbon in the etching is explored. Together, the results provide an important insight into the oxygen-related deterioration of two-dimensional materials under ambient conditions relevant in many fields. △ Less

Submitted 2 May, 2022; originally announced May 2022.

Comments: 17 pages, 9 figures and 3 tables

Interface effects on titanium growth on graphene

Authors: Georg Zagler, Alberto Trentino, Kimmo Mustonen, Clemens Mangler, Jani Kotakoski

Abstract: Poor quality interfaces between metal and graphene cause non-linearity and impair the carrier mobility in graphene devices. Here, we use aberration corrected scanning transmission electron microscopy to observe hexagonally close-packed Ti nano-islands grown on atomically clean graphene, and establish a 30° epitaxial relationship between the lattices. Due to the strong binding of Ti on graphene, at… ▽ More Poor quality interfaces between metal and graphene cause non-linearity and impair the carrier mobility in graphene devices. Here, we use aberration corrected scanning transmission electron microscopy to observe hexagonally close-packed Ti nano-islands grown on atomically clean graphene, and establish a 30° epitaxial relationship between the lattices. Due to the strong binding of Ti on graphene, at the limit of a monolayer, the Ti lattice constant is mediated by the graphene epitaxy, and compared to bulk Ti, is strained by ca. 3.7% to a value of 0.306(3) nm. The resulting interfacial strain is slightly greater than what has been predicted by density functional theory calculations. Our early growth stage investigations also reveal that, in contrast to widespread assumptions, Ti does not fully wet graphene but grows initially in clusters with a thickness of 1-2 layers. Raman spectroscopy implies charge transfer between the Ti islands and graphene substrate. △ Less

Submitted 10 August, 2023; v1 submitted 20 April, 2022; originally announced April 2022.

Comments: 11 pages, 5 figures

Towards Exotic Layered Materials: 2D Cuprous Iodide

Authors: Kimmo Mustonen, Christoph Hofer, Peter Kotrusz, Alexander Markevich, Martin Hulman, Clemens Mangler, Toma Susi, Timothy J. Pennycook, Karol Hricovini, Christine M. Richter, Jannik C. Meyer, Jani Kotakoski, Viera Skakalova

Abstract: Heterostructures composed of two-dimensional (2D) materials are already opening many new possibilities in such fields of technology as electronics and magnonics, but far more could be achieved if the number and diversity of 2D materials is increased. So far, only a few dozen 2D crystals have been extracted from materials that exhibit a layered phase in ambient conditions, omitting entirely the lar… ▽ More Heterostructures composed of two-dimensional (2D) materials are already opening many new possibilities in such fields of technology as electronics and magnonics, but far more could be achieved if the number and diversity of 2D materials is increased. So far, only a few dozen 2D crystals have been extracted from materials that exhibit a layered phase in ambient conditions, omitting entirely the large number of layered materials that may exist in other temperatures and pressures. Here, we demonstrate how these structures can be stabilized in 2D van der Waals stacks under room temperature via growing them directly in graphene encapsulation by using graphene oxide as the template material. Specifically, we produce an ambient stable 2D structure of copper and iodine, a material that normally only occurs in layered form at elevated temperatures between 645 and 675 K. Our results establish a route to the production of more exotic phases of materials that would otherwise be difficult or impossible to stabilize for experiments in ambient. △ Less

Submitted 3 December, 2021; v1 submitted 17 September, 2021; originally announced September 2021.

Comments: 15 pages, 6 figures, separate supplementary material included

Chemistry at graphene edges in the electron microscope

Authors: Gregor T. Leuthner, Toma Susi, Clemens Mangler, Jannik C. Meyer, Jani Kotakoski

Abstract: Transmission electron microscopy (TEM) and scanning TEM (STEM) are indispensable tools for materials characterization. However, during a typical (S)TEM experiment, the sample is subject to a number of effects that can change its atomic structure. Of these, perhaps the least discussed are chemical modifications due to the non-ideal vacuum around the sample. With single-layer graphene, we show that… ▽ More Transmission electron microscopy (TEM) and scanning TEM (STEM) are indispensable tools for materials characterization. However, during a typical (S)TEM experiment, the sample is subject to a number of effects that can change its atomic structure. Of these, perhaps the least discussed are chemical modifications due to the non-ideal vacuum around the sample. With single-layer graphene, we show that even at relatively low pressures typical for many instruments, these processes can have a significant impact on the sample structure. For example, pore growth becomes up to two orders of magnitude faster at a pressure of ca. 10^{-6} mbar as compared to ultra-high vacuum (UHV; 10^{-10} mbar). Even more remarkably,the presence of oxygen at the sample also changes the observed atomic structure: When imaged in UHV, nearly 90% of the identifiable graphene edge configurations have the armchair structure, whereas armchair and zigzag structures are nearly equally likely to occur when the oxygen partial pressure in the column is higher. Our results both bring attention to the role of the often neglected vacuum composition of the microscope column, and show that control over it can allow atomic-scale tailoring of the specimen structure. △ Less

Submitted 7 December, 2020; originally announced December 2020.

Comments: 33 pages, including the supplement, 9 figures

Resolving Few-Layer Antimonene/Graphene Heterostructures

Authors: Tushar Gupta, Kenan Elibol, Stefan Hummel, Michael Stöger-Pollach, Clemens Mangler, Gerlinde Habler, Jannik C. Meyer, Dominik Eder, Bernhard C. Bayer

Abstract: Two-dimensional (2D) antimony (Sb, antimonene) recently attracted interest due to its peculiar electronic properties and its suitability as anode material in next generation batteries. Sb however exhibits a large polymorphic/allotropic structural diversity, which is also influenced by the Sb's support. Thus understanding Sb heterostructure formation is key in 2D Sb integration. Particularly 2D Sb/… ▽ More Two-dimensional (2D) antimony (Sb, antimonene) recently attracted interest due to its peculiar electronic properties and its suitability as anode material in next generation batteries. Sb however exhibits a large polymorphic/allotropic structural diversity, which is also influenced by the Sb's support. Thus understanding Sb heterostructure formation is key in 2D Sb integration. Particularly 2D Sb/graphene interfaces are of prime importance as contacts in electronics and electrodes in batteries. We thus study here few-layered 2D Sb/graphene heterostructures by atomic-resolution (scanning) transmission electron microscopy. We find the co-existence of two Sb morphologies: First is a 2D growth morphology of layered beta-Sb with beta-Sb(001)||graphene(001) texture. Second are one-dimensional (1D) Sb nanowires which can be matched to beta-Sb with beta-Sb[2-21] perpendicular to graphene(001) texture and are structurally also closely related to thermodynamically non-preferred cubic Sb(001)||graphene(001). Importantly, both Sb morphologies show rotational van-der-Waals epitaxy with the graphene support. Both Sb morphologies are well resilient against environmental bulk oxidation, although superficial Sb-oxide layer formation merits consideration, including formation of novel epitaxial Sb2O3(111)/beta-Sb(001) heterostructures. Exact Sb growth behavior is sensitive on employed processing and substrate properties including, notably, the nature of the support underneath the direct graphene support. This introduces the substrate underneath a direct 2D support as a key parameter in 2D Sb heterostructure formation. Our work provides insights into the rich phase and epitaxy landscape in 2D Sb and 2D Sb/graphene heterostructures. △ Less

Submitted 7 September, 2020; originally announced September 2020.

Single indium atoms and few-atom indium clusters anchored onto graphene via silicon heteroatoms

Authors: Kenan Elibol, Clemens Mangler, David D. O'Regan, Kimmo Mustonen, Dominik Eder, Jannik C. Meyer, Jani Kotakoski, Richard G. Hobbs, Toma Susi, Bernhard C. Bayer

Abstract: Single atoms and few-atom nanoclusters are of high interest in catalysis and plasmonics, but pathways for their fabrication and stable placement remain scarce. We report here the self-assembly of room-temperature-stable single indium (In) atoms and few-atom In clusters (2-6 atoms) that are anchored to substitutional silicon (Si) impurity atoms in suspended monolayer graphene membranes. Using atomi… ▽ More Single atoms and few-atom nanoclusters are of high interest in catalysis and plasmonics, but pathways for their fabrication and stable placement remain scarce. We report here the self-assembly of room-temperature-stable single indium (In) atoms and few-atom In clusters (2-6 atoms) that are anchored to substitutional silicon (Si) impurity atoms in suspended monolayer graphene membranes. Using atomically resolved scanning transmission electron microscopy (STEM), we find that the exact atomic arrangements of the In atoms depend strongly on the original coordination of the Si anchors in the graphene lattice: Single In atoms and In clusters with 3-fold symmetry readily form on 3-fold coordinated Si atoms, whereas 4-fold symmetric clusters are found attached to 4-fold coordinated Si atoms. All structures are produced by our fabrication route without the requirement for electron-beam induced materials modification. In turn, when activated by electron beam irradiation in the STEM, we observe in situ the formation, restructuring and translation dynamics of the Si-anchored In structures: Hexagon-centered 4-fold symmetric In clusters can (reversibly) transform into In chains or In dimers, whereas C-centered 3-fold symmetric In clusters can move along the zig-zag direction of the graphene lattice due to the migration of Si atoms during electron-beam irradiation, or transform to Si-anchored single In atoms. Our results provide a novel framework for the controlled self-assembly and heteroatomic anchoring of single atoms and few-atom clusters on graphene. △ Less

Submitted 31 August, 2020; originally announced September 2020.

Journal ref: ACS Nano 2021, 15, 9, 14373-14383

CuAu, a hexagonal two-dimensional metal

Authors: Georg Zagler, Michele Reticcioli, Clemens Mangler, Daniel Scheinecker, Cesare Franchini, Jani Kotakoski

Abstract: Growth of two-dimensional metals has eluded materials scientists since the discovery of the atomically thin graphene and other covalently bound 2D materials. Here, we report a two-atom-thick hexagonal copper-gold alloy, grown through thermal evaporation on freestanding graphene and hexagonal boron nitride. The structures are imaged at atomic resolution with scanning transmission electron microscop… ▽ More Growth of two-dimensional metals has eluded materials scientists since the discovery of the atomically thin graphene and other covalently bound 2D materials. Here, we report a two-atom-thick hexagonal copper-gold alloy, grown through thermal evaporation on freestanding graphene and hexagonal boron nitride. The structures are imaged at atomic resolution with scanning transmission electron microscopy and further characterized with spectroscopic techniques. Electron irradiation in the microscope provides sufficient energy for a phase transformation of the 2D structure--atoms are released from their lattice sites with the gold atoms eventually forming face-centered cubic nanoclusters on top of 2D regions during observation. The presence of copper in the alloy enhances sticking of gold to the substrate, which has clear implications for creating atomically thin electrodes for applications utilizing 2D materials. Its practically infinite surface-to-bulk ratio also makes the 2D CuAu particularly interesting for catalysis applications. △ Less

Submitted 11 June, 2020; v1 submitted 13 September, 2019; originally announced September 2019.

Comments: 24 pages, including 4 figures in main text and 6 in the supplementary information

Electron-Beam Manipulation of Silicon Impurities in Single-Walled Carbon Nanotubes

Authors: Kimmo Mustonen, Alexander Markevich, Mukesh Tripathi, Heena Inani, Er-Xiong Ding, Aqeel Hussain, Clemens Mangler, Esko I. Kauppinen, Jani Kotakoski, Toma Susi

Abstract: The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances in electron optics and microscope stability, but also in the preparation of suitable materials with impurity elements incorporated via ion and electron-beam irradiation or chemical m… ▽ More The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances in electron optics and microscope stability, but also in the preparation of suitable materials with impurity elements incorporated via ion and electron-beam irradiation or chemical means. Here it is shown that silicon heteroatoms introduced via plasma irradiation into the lattice of single-walled carbon nanotubes (SWCNTs) can be manipulated using a focused 55-60 keV electron probe aimed at neighboring carbon sites. Moving the silicon atom mainly along the longitudinal axis of large 2.7 nm diameter tubes, more than 90 controlled lattice jumps were recorded and the relevant displacement cross sections estimated. Molecular dynamics simulations show that even in 2 nm SWCNTs the threshold energies for out-of-plane dynamics are different than in graphene, and depend on the orientation of the silicon-carbon bond with respect to the electron beam as well as the local bonding of the displaced carbon atom and its neighbors. Atomic-level engineering of SWCNTs where the electron wave functions are more strictly confined than in two-dimensional materials may enable the fabrication of tunable electronic resonators and other devices. △ Less

Submitted 11 February, 2019; originally announced February 2019.

Comments: 15 pages, 4 figures

Si Substitution in Nanotubes and Graphene via Intermittent Vacancies

Authors: Heena Inani, Kimmo Mustonen, Alexander Markevich, Er-Xiong Ding, Mukesh Tripathi, Aqeel Hussain, Clemens Mangler, Esko I. Kauppinen, Toma Susi, Jani Kotakoski

Abstract: The properties of single-walled carbon nanotubes (SWCNTs) and graphene can be modified by the presence of covalently bound impurities. Although this can be achieved by introducing chemical additives during synthesis, that often hinders growth and leads to limited crystallite size and quality. Here, through the simultaneous formation of vacancies with low-energy argon plasma and the thermal activat… ▽ More The properties of single-walled carbon nanotubes (SWCNTs) and graphene can be modified by the presence of covalently bound impurities. Although this can be achieved by introducing chemical additives during synthesis, that often hinders growth and leads to limited crystallite size and quality. Here, through the simultaneous formation of vacancies with low-energy argon plasma and the thermal activation of adatom diffusion by laser irradiation, silicon impurities are incorporated into the lattice of both materials. After an exposure of $\sim$1 ion/nm$^{2}$, we find Si substitution densities of 0.15 nm$^{-2}$ in graphene and 0.05 nm$^{-2}$ in nanotubes, as revealed by atomically resolved scanning transmission electron microscopy. In good agreement with predictions of Ar irradiation effects in SWCNTs, we find Si incorporated in both mono- and divacancies, with $\sim$2/3 being of the first type. Controlled inclusion of impurities in the quasi-1D and 2D carbon lattices may prove useful for applications such as gas sensing, and a similar approach might also be used to substitute other elements with migration barriers lower than that of carbon. △ Less

Submitted 7 February, 2019; originally announced February 2019.

Comments: 5 Pages, 5 Figures, 1 Table

Scanning transmission electron microscopy under controlled low-pressure atmospheres

Authors: Gregor T. Leuthner, Stefan Hummel, Clemens Mangler, Timothy J. Pennycook, Toma Susi, Jannik C. Meyer, Jani Kotakoski

Abstract: Transmission electron microscopy (TEM) is carried out in vacuum to minimize the interaction of the imaging electrons with gas molecules while passing through the microscope column. Nevertheless, in typical devices, the pressure remains at 10^-7 mbar or above, providing a large number of gas molecules for the electron beam to crack, which can lead to structural changes in the sample. Here, we descr… ▽ More Transmission electron microscopy (TEM) is carried out in vacuum to minimize the interaction of the imaging electrons with gas molecules while passing through the microscope column. Nevertheless, in typical devices, the pressure remains at 10^-7 mbar or above, providing a large number of gas molecules for the electron beam to crack, which can lead to structural changes in the sample. Here, we describe experiments carried out in a modified scanning TEM (STEM) instrument, based on the Nion UltraSTEM 100. In this instrument, the base pressure at the sample is around 2x10^-10 mbar, and can be varied up to 10^-6 mbar through introduction of gases directly into the objective area while maintaining atomic resolution imaging conditions. We show that air leaked into the microscope column during the experiment is efficient in cleaning graphene samples from contamination, but ineffective in damaging the pristine lattice. Our experiments also show that exposure to O2 and H2O lead to a similar result, oxygen providing an etching effect nearly twice as efficient as water, presumably due to the two O atoms per molecule. H2 and N2 environments have no influence on etching. These results show that the residual gas environment in typical TEM instruments can have a large influence on the observations, and show that chemical etching of carbon-based structures can be effectively carried out with oxygen. △ Less

Submitted 24 January, 2019; v1 submitted 10 November, 2018; originally announced November 2018.

Comments: 15 pages, 7 figure

Direct visualization of the 3D structure of silicon impurities in graphene

Authors: Christoph Hofer, Viera Skakalova, Mohammad Reza Ahmadpour Monazam, Clemens Mangler, Jani Kotakoski, Toma Susi, Jannik C. Meyer

Abstract: We directly visualize the three-dimensional (3D) geometry and dynamics of silicon impurities in graphene as well as their dynamics by aberration-corrected scanning transmission electron microscopy. By acquiring images when the sample is tilted, we show that an asymmetry of the atomic position of the heteroatom in the projection reveals the non-planarity of the structure. From a sequence of images,… ▽ More We directly visualize the three-dimensional (3D) geometry and dynamics of silicon impurities in graphene as well as their dynamics by aberration-corrected scanning transmission electron microscopy. By acquiring images when the sample is tilted, we show that an asymmetry of the atomic position of the heteroatom in the projection reveals the non-planarity of the structure. From a sequence of images, we further demonstrate that the Si atom switches between up- and down- configurations with respect to the graphene plane, with an asymmetric cross-section. We further analyze the 3D structure and dynamics of a silicon tetramer in graphene. Our results clarify the out-of-plane structure of impurities in graphene by direct experimental observation and open a new route to study their dynamics in three dimensions. △ Less

Submitted 24 September, 2018; originally announced September 2018.

Intrinsic core level photoemission of suspended graphene

Authors: Toma Susi, Mattia Scardamaglia, Kimmo Mustonen, Andreas Mittelberger, Mohamed Al-Hada, Matteo Amati, Hikmet Sezen, Patrick Zeller, Ask H. Larsen, Clemens Mangler, Jannik C. Meyer, Luca Gregoratti, Carla Bittencourt, Jani Kotakoski

Abstract: X-ray photoelectron spectroscopy of graphene is important both for its characterization and as a model for other carbon materials. Despite great recent interest, the intrinsic photoemission of its single layer has not been unambiguously measured, nor is the layer-dependence in free-standing multilayers accurately determined. We combine scanning transmission electron microscopy and Raman spectrosco… ▽ More X-ray photoelectron spectroscopy of graphene is important both for its characterization and as a model for other carbon materials. Despite great recent interest, the intrinsic photoemission of its single layer has not been unambiguously measured, nor is the layer-dependence in free-standing multilayers accurately determined. We combine scanning transmission electron microscopy and Raman spectroscopy with synchrotron-based scanning photoelectron microscopy to characterize the same areas of suspended graphene samples down to the atomic level. This allows us to assign spectral signals to regions of precisely known layer number and purity. The core level binding energy of the monolayer is measured at 284.70 eV, thus 0.28 eV higher than that of graphite, with intermediate values found for few layers. This trend is reproduced by density functional theory with or without explicit van der Waals interactions, indicating that intralayer charge rearrangement dominates, but in our model of static screening the magnitudes of the shifts are underestimated by half. △ Less

Submitted 31 July, 2018; originally announced July 2018.

Comments: 5 pages, 4 figures, 1 table

Journal ref: Phys. Rev. Materials 2, 074005 (2018)

Revealing the 3D Structure of Graphene Defects

Authors: Christoph Hofer, Christian Kramberger, Mohammad Reza Ahmadpour Monazam, Clemens Mangler, Andreas Mittelberger, Giacomo Argentero, Jani Kotakoski, Jannik C. Meyer

Abstract: We demonstrate insights into the three-dimensional structure of defects in graphene, in particular grain boundaries, obtained via a new approach from two transmission electron microscopy images recorded at different angles. The structure is obtained through an optimization process where both the atomic positions as well as the simulated imaging parameters are iteratively changed until the best pos… ▽ More We demonstrate insights into the three-dimensional structure of defects in graphene, in particular grain boundaries, obtained via a new approach from two transmission electron microscopy images recorded at different angles. The structure is obtained through an optimization process where both the atomic positions as well as the simulated imaging parameters are iteratively changed until the best possible match to the experimental images is found. We first demonstrate that this method works using an embedded defect in graphene that allows direct comparison to the computationally predicted three-dimensional shape. We then applied the method to a set of grain boundary structures with misorientation angles nearly spanning the whole available range (2.6-29.8°). The measured height variations at the boundaries reveal a strong correlation with the misorientation angle with lower angles resulting in stronger corrugation and larger kink angles. Our results allow for the first time a direct comparison with theoretical predictions for the corrugation at grain boundaries and we show that the measured kink angles are significantly smaller than the largest predicted ones. △ Less

Submitted 2 July, 2018; originally announced July 2018.

Comments: submitted

Structure evolution of hcp/ccp metal oxide interfaces in solid-state reactions

Authors: C. Li, G. Habler, T. Griffiths, A. Rečnik, P. Jeřábek, L. C. Götze, C. Mangler, T. J. Pennycook, J. Meyer, R. Abart

Abstract: The structure of crystalline interfaces plays an important role in solid-state reactions. The Al2O3/MgAl2O4/MgO system provides an ideal model system for investigating the mechanisms underlying the migration of interfaces during interface reaction. MgAl2O4 layers have been grown between Al2O3 and MgO, and the atomic structure of Al2O3/MgAl2O4 interfaces at different growth stages was characterized… ▽ More The structure of crystalline interfaces plays an important role in solid-state reactions. The Al2O3/MgAl2O4/MgO system provides an ideal model system for investigating the mechanisms underlying the migration of interfaces during interface reaction. MgAl2O4 layers have been grown between Al2O3 and MgO, and the atomic structure of Al2O3/MgAl2O4 interfaces at different growth stages was characterized using aberration-corrected scanning transmission electron microscopy. The oxygen sublattice transforms from hexagonal close-packed (hcp) stacking in Al2O3 to cubic close-packed (ccp) stacking in MgAl2O4. Partial dislocations associated with steps are observed at the interface. At the reaction-controlled early growth stages, such partial dislocations coexist with the edge dislocations. However, at the diffusion-controlled late growth stages, such partial dislocations are dominant. The observed structures indicate that progression of the Al2O3/MgAl2O4 interface into Al2O3 is accomplished by the glide of partial dislocations accompanied by the exchange of Al3+ and Mg2+ cations. The interface migration may be envisaged as a plane-by-plane zipper-like motion, which repeats along the interface facilitating its propagation. MgAl2O4 grains can adopt two crystallographic orientations with a twinning orientation relationship, and grow by dislocations gliding in opposite directions. Where the oppositely propagating partial dislocations and interface steps meet, interlinked twin boundaries and incoherent Σ3 grain boundaries form. The newly grown MgAl2O4 grains compete with each other, leading to a growth-selection and successive coarsening of the MgAl2O4 grains. This understanding could help to interpret the interface reaction or phase transformation of a wide range of materials that exhibit a similar hcp/ccp transition. △ Less

Submitted 19 December, 2018; v1 submitted 14 April, 2018; originally announced April 2018.

Journal ref: Acta Crystallographica Section A (2018). A74, 466-480

Automated image acquisition for low-dose STEM at atomic resolution

Authors: Andreas Mittelberger, Christian Kramberger, Christoph Hofer, Clemens Mangler, Jannik C. Meyer

Abstract: Beam damage is a major limitation in electron microscopy that becomes increasingly severe at higher resolution. One possible route to circumvent radiation damage, which forms the basis for single-particle electron microscopy and related techniques, is to distribute the dose over many identical copies of an object. For the acquisition of low-dose data, ideally no dose should be applied to the regio… ▽ More Beam damage is a major limitation in electron microscopy that becomes increasingly severe at higher resolution. One possible route to circumvent radiation damage, which forms the basis for single-particle electron microscopy and related techniques, is to distribute the dose over many identical copies of an object. For the acquisition of low-dose data, ideally no dose should be applied to the region of interest prior to the acquisition of data. We present an automated approach that can collect large amounts of data efficiently by acquiring images in an user-defined area-of-interest with atomic resolution. We demonstrate that the stage mechanics of the Nion UltraSTEM, combined with an intelligent algorithm to move the sample, allows the automated acquisition of atomically resolved images from micron-sized areas of a graphene substrate. Moving the sample stage automatically in a regular pattern over the area-of-interest enables the collection of data from pristine sample regions without exposing them to the electron beam before recording an image. Therefore, it is possible to obtain data with minimal dose (no prior exposure from focusing), which is only limited by the minimum signal needed for data processing. This enables us to prevent beam induced damage in the sample and to acquire large datasets within a reasonable amount of time. △ Less

Submitted 16 March, 2018; v1 submitted 15 March, 2018; originally announced March 2018.

Journal ref: Mittelberger, A., Kramberger, C., Hofer, C., Mangler, C., & Meyer, J. (2017). Microscopy and Microanalysis, 23(4), 809-817

Electron-Beam Manipulation of Silicon Dopants in Graphene

Authors: Mukesh Tripathi, Andreas Mittelberger, Nicholas A. Pike, Clemens Mangler, Jannik C. Meyer, Matthieu J. Verstraete, Jani Kotakoski, Toma Susi

Abstract: The direct manipulation of individual atoms in materials using scanning probe microscopy has been a seminal achievement of nanotechnology. Recent advances in imaging resolution and sample stability have made scanning transmission electron microscopy a promising alternative for single-atom manipulation of covalently bound materials. Pioneering experiments using an atomically focused electron beam h… ▽ More The direct manipulation of individual atoms in materials using scanning probe microscopy has been a seminal achievement of nanotechnology. Recent advances in imaging resolution and sample stability have made scanning transmission electron microscopy a promising alternative for single-atom manipulation of covalently bound materials. Pioneering experiments using an atomically focused electron beam have demonstrated the directed movement of silicon atoms over a handful of sites within the graphene lattice. Here, we achieve a much greater degree of control, allowing us to precisely move silicon impurities along an extended path, circulating a single hexagon, or back and forth between the two graphene sublattices. Even with manual operation, our manipulation rate is already comparable to the state-of-the-art in any atomically precise technique. We further explore the influence of electron energy on the manipulation rate, supported by improved theoretical modeling taking into account the vibrations of atoms near the impurities, and implement feedback to detect manipulation events in real time. In addition to atomic-level engineering of its structure and properties, graphene also provides an excellent platform for refining the accuracy of quantitative models and for the development of automated manipulation. △ Less

Submitted 25 June, 2018; v1 submitted 23 December, 2017; originally announced December 2017.

Comments: 5 figures, 4 supporting figures

Buckyball sandwiches

Authors: Rasim Mirzayev, Kimmo Mustonen, Mohammad R. A. Monazam, Andreas Mittelberger, Timothy J. Pennycook, Clemens Mangler, Toma Susi, Jani Kotakoski, Jannik C. Meyer

Abstract: Two-dimensional (2D) materials have considerably expanded the field of materials science in the last decade. Even more recently, various 2D materials have been assembled into vertical van der Waals heterostacks, and it has been proposed to combine them with other low- dimensional structures to create new materials with hybridized properties. Here, we demonstrate the first direct images of a suspen… ▽ More Two-dimensional (2D) materials have considerably expanded the field of materials science in the last decade. Even more recently, various 2D materials have been assembled into vertical van der Waals heterostacks, and it has been proposed to combine them with other low- dimensional structures to create new materials with hybridized properties. Here, we demonstrate the first direct images of a suspended 0D/2D heterostructure incorporating $C_{60}$ molecules between two graphene layers in a buckyball sandwich structure. We find clean and ordered $C_{60}$ islands with thicknesses down to one molecule, shielded by the graphene layers from the microscope vacuum and partially protected from radiation damage during scanning transmission electron microscopy imaging. The sandwich structure serves as a 2D nanoscale reaction chamber allowing the analysis of the structure of the molecules and their dynamics at atomic resolution. △ Less

Submitted 19 June, 2017; originally announced June 2017.

Journal ref: Science Advances 09 Jun 2017: Vol. 3, no. 6, e1700176

Cleaning graphene: comparing heat treatments in air and in vacuum

Authors: Mukesh Tripathi, Andreas Mittelberger, Kimmo Mustonen, Clemens Mangler, Jani Kotakoski, Jannik C. Meyer, Toma Susi

Abstract: Surface impurities and contamination often seriously degrade the properties of two-dimensional materials such as graphene. To remove contamination, thermal annealing is commonly used. We present a comparative analysis of annealing treatments in air and in vacuum, both ex situ and "pre-situ", where an ultra-high vacuum treatment chamber is directly connected to an aberration-corrected scanning tran… ▽ More Surface impurities and contamination often seriously degrade the properties of two-dimensional materials such as graphene. To remove contamination, thermal annealing is commonly used. We present a comparative analysis of annealing treatments in air and in vacuum, both ex situ and "pre-situ", where an ultra-high vacuum treatment chamber is directly connected to an aberration-corrected scanning transmission electron microscope. While ex situ treatments do remove contamination, it is challenging to obtain atomically clean surfaces after ambient transfer. However, pre-situ cleaning with radiative or laser heating appears reliable and well suited to clean graphene without undue damage to its structure. △ Less

Submitted 26 April, 2017; originally announced April 2017.

Comments: 5 pages, 4 figures

Journal ref: Physica Status Solidi Rapid Research Letters (2017)

Unraveling the 3D atomic structure of a suspended graphene/hBN van der Waals heterostructure

Authors: G. Argentero, A. Mittelberger, M. R. A. Monazam, Y. Cao, T. J. Pennycook, C. Mangler, C. Kramberger, J. Kotakoski, A. K. Geim, J. C. Meyer

Abstract: In this work we demonstrate that a free-standing van der Waals heterostructure, usually regarded as a flat object, can exhibit an intrinsic buckled atomic structure resulting from the interaction between two layers with a small lattice mismatch. We studied a freely suspended membrane of well aligned graphene on a hexagonal boron nitride (hBN) monolayer by transmission electron microscopy (TEM) and… ▽ More In this work we demonstrate that a free-standing van der Waals heterostructure, usually regarded as a flat object, can exhibit an intrinsic buckled atomic structure resulting from the interaction between two layers with a small lattice mismatch. We studied a freely suspended membrane of well aligned graphene on a hexagonal boron nitride (hBN) monolayer by transmission electron microscopy (TEM) and scanning TEM (STEM). We developed a detection method in the STEM that is capable of recording the direction of the scattered electron beam and that is extremely sensitive to the local stacking of atoms. Comparison between experimental data and simulated models shows that the heterostructure effectively bends in the out-of-plane direction, producing an undulated structure having a periodicity that matches the moiré wavelength. We attribute this rippling to the interlayer interaction and also show how this affects the intralayer strain in each layer. △ Less

Submitted 9 February, 2017; originally announced February 2017.

Comments: 21 pages, 5 figures

Computational insights and the observation of SiC nanograin assembly: towards 2D silicon carbide

Authors: Toma Susi, Viera Skakalova, Andreas Mittelberger, Peter Kotrusz, Martin Hulman, Timothy J. Pennycook, Clemens Mangler, Jani Kotakoski, Jannik C. Meyer

Abstract: While an increasing number of two-dimensional (2D) materials, including graphene and silicene, have already been realized, others have only been predicted. An interesting example is the two-dimensional form of silicon carbide (2D-SiC). Here, we present an observation of atomically thin and hexagonally bonded nanosized grains of SiC assembling temporarily in graphene oxide pores during an atomic re… ▽ More While an increasing number of two-dimensional (2D) materials, including graphene and silicene, have already been realized, others have only been predicted. An interesting example is the two-dimensional form of silicon carbide (2D-SiC). Here, we present an observation of atomically thin and hexagonally bonded nanosized grains of SiC assembling temporarily in graphene oxide pores during an atomic resolution scanning transmission electron microscopy experiment. Even though these small grains do not fully represent the bulk crystal, simulations indicate that their electronic structure already approaches that of 2D-SiC. This is predicted to be flat, but some doubts have remained regarding the preference of Si for sp$^{3}$ hybridization. Exploring a number of corrugated morphologies, we find completely flat 2D-SiC to have the lowest energy. We further compute its phonon dispersion, with a Raman-active transverse optical mode, and estimate the core level binding energies. Finally, we study the chemical reactivity of 2D-SiC, suggesting it is like silicene unstable against molecular absorption or interlayer linking. Nonetheless, it can form stable van der Waals-bonded bilayers with either graphene or hexagonal boron nitride, promising to further enrich the family of two-dimensional materials once bulk synthesis is achieved. △ Less

Submitted 15 November, 2018; v1 submitted 25 January, 2017; originally announced January 2017.

Comments: 10 pages, 5 figures, 4 supplementary figures

Single-atom spectroscopy of phosphorus dopants implanted into graphene

Authors: Toma Susi, Trevor P. Hardcastle, Hans Hofsäss, Andreas Mittelberger, Timothy J. Pennycook, Clemens Mangler, Rik Drummond-Brydson, Andrew J. Scott, Jannik C. Meyer, Jani Kotakoski

Abstract: One of the keys behind the success of the modern semiconductor technology has been the ion implantation of silicon, which allows its electronic properties to be tailored. For similar purposes, heteroatoms have been introduced into carbon nanomaterials both during growth and using post-growth methods. However, due to the nature of the samples, it has been challenging to determine whether the hetero… ▽ More One of the keys behind the success of the modern semiconductor technology has been the ion implantation of silicon, which allows its electronic properties to be tailored. For similar purposes, heteroatoms have been introduced into carbon nanomaterials both during growth and using post-growth methods. However, due to the nature of the samples, it has been challenging to determine whether the heteroatoms have been incorporated into the lattice as intended, with direct observations so far being limited to N and B dopants, and incidental Si impurities. Furthermore, ion implantation of these materials is more challenging due to the requirement of very low ion energies and atomically clean surfaces. Here, we provide the first atomic-resolution imaging and electron energy loss spectroscopy (EELS) evidence of phosphorus atoms incorporated into the graphene lattice by low-energy ion irradiation. The measured P L-edge response of an single-atom EELS spectrum map shows excellent agreement with an ab initio spectrum simulation, conclusively identifying the P in a buckled substitutional configuration. Our results demonstrate the viability of phosphorus as a lattice dopant in $sp^2$-bonded carbon structures and provide its unmistakeable fingerprint for further studies. △ Less

Submitted 11 October, 2016; originally announced October 2016.

Comments: 15 pages, 5 figures

Isotope analysis in the transmission electron microscope

Authors: Toma Susi, Christoph Hofer, Giacomo Argentero, Gregor T. Leuthner, Timothy J. Pennycook, Clemens Mangler, Jannik C. Meyer, Jani Kotakoski

Abstract: The Ångström-sized probe of the scanning transmission electron microscope can visualize and collect spectra from single atoms. This can unambiguously resolve the chemical structure of materials, but not their isotopic composition. Here we differentiate between two isotopes of the same element by quantifying how likely the energetic imaging electrons are to eject atoms. First, we measure the displa… ▽ More The Ångström-sized probe of the scanning transmission electron microscope can visualize and collect spectra from single atoms. This can unambiguously resolve the chemical structure of materials, but not their isotopic composition. Here we differentiate between two isotopes of the same element by quantifying how likely the energetic imaging electrons are to eject atoms. First, we measure the displacement probability in graphene grown from either $^{12}$C or $^{13}$C and describe the process using a quantum mechanical model of lattice vibrations coupled with density functional theory simulations. We then test our spatial resolution in a mixed sample by ejecting individual atoms from nanoscale areas spanning an interface region that is far from atomically sharp, mapping the isotope concentration with a precision better than 20%. Although we use a scanning instrument, our method should be applicable to any atomic resolution transmission electron microscope and to other low-dimensional materials. △ Less

Submitted 16 August, 2016; originally announced August 2016.

Comments: 35 pages, 6 figures, 1 table

Silicon-carbon bond inversions driven by 60 keV electrons in graphene

Authors: Toma Susi, Jani Kotakoski, Demie Kepaptsoglou, Clemens Mangler, Tracy C. Lovejoy, Ondrej L. Krivanek, Recep Zan, Ursel Bangert, Paola Ayala, Jannik C. Meyer, Quentin Ramasse

Abstract: We demonstrate that 60 keV electron irradiation drives the diffusion of threefold coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probabi… ▽ More We demonstrate that 60 keV electron irradiation drives the diffusion of threefold coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probability for their occurrence in a good agreement with the simulations. Conversions from three- to fourfold coordinated dopant structures and the subsequent reverse process are significantly less likely than the direct bond inversion. Our results thus provide a model of non-destructive and atomically precise structural modification and detection for two-dimensional materials. △ Less

Submitted 17 July, 2014; v1 submitted 16 July, 2014; originally announced July 2014.

Comments: Article: 12 pages, 4 figures. Supplemental Material: 9 pages, 8 figures, 1 table

Journal ref: Phys. Rev. Lett. 113, 115501 (2014)

Imaging Atomic-Level Random Walk of a Point Defect in Graphene

Authors: Jani Kotakoski, Clemens Mangler, Jannik C. Meyer

Abstract: Deviations from the perfect atomic arrangements in crystals play an important role in affecting their properties. Similarly, diffusion of such deviations is behind many microstructural changes in solids. However, observation of point defect diffusion is hindered both by the difficulties related to direct imaging of non-periodic structures and by the time scales involved in the diffusion process. H… ▽ More Deviations from the perfect atomic arrangements in crystals play an important role in affecting their properties. Similarly, diffusion of such deviations is behind many microstructural changes in solids. However, observation of point defect diffusion is hindered both by the difficulties related to direct imaging of non-periodic structures and by the time scales involved in the diffusion process. Here, instead of imaging thermal diffusion, we stimulate and follow the migration of a divacancy through graphene lattice using a scanning transmission electron microscope operated at 60 kV. The beam-activated process happens on a timescale that allows us to capture a significant part of the structural transformations and trajectory of the defect. The low voltage combined with ultra-high vacuum conditions ensure that the defect remains stable over long image sequences, which allows us for the first time to directly follow the diffusion of a point defect in a crystalline material. △ Less

Submitted 29 April, 2014; originally announced April 2014.

Journal ref: Nat. Commun. 5, 4991 (2014)

Electronic Transport in Composites of Graphite Oxide with Carbon Nanotubes

Authors: Viera Skakalova, Viliam Vretenar, Lubomir Kopera, Peter Kotrusz, Clemens Mangler, Marcel Mesko, Jannik C. Meyer, Martin Hulman

Abstract: We show that the presence of electrically insulating graphite oxide (GO) within a single wall carbon nanotube network strongly enhances electrical conductivity, whereas reduced graphite oxide, even though electrically conductive, suppresses electrical conductivity within a composite network with single wall carbon nanotubes. Measurements of Young modulus and of Raman spectra strongly support our i… ▽ More We show that the presence of electrically insulating graphite oxide (GO) within a single wall carbon nanotube network strongly enhances electrical conductivity, whereas reduced graphite oxide, even though electrically conductive, suppresses electrical conductivity within a composite network with single wall carbon nanotubes. Measurements of Young modulus and of Raman spectra strongly support our interpretation of the indirect role of the oxide groups, present in graphite oxide within the single wall carbon nanotubes/graphite oxide composite, through electronic doping of metallic single wall carbon nanotubes. △ Less

Submitted 30 November, 2013; originally announced December 2013.