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Structural, dielectric, and ferroelectric characteristics of the low-temperature sintered 65PMN-35PT sample for electroceramic applications
Authors:
B. Ramachandran,
N. Sudarshan,
G. Mangamma,
M. S. Ramachandra Rao
Abstract:
A single-phase 65PMN-35PT ceramic was synthesized at a relatively low temperature (875 oC) using a modified columbite method. X-ray diffraction analysis confirmed the single-phase formation of perovskite 65PMN-35PT with a tetragonal structure. Morphological studies indicated that the sample consisted of small grains with a size of about 2 micro-m. The dielectric properties of the material demonstr…
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A single-phase 65PMN-35PT ceramic was synthesized at a relatively low temperature (875 oC) using a modified columbite method. X-ray diffraction analysis confirmed the single-phase formation of perovskite 65PMN-35PT with a tetragonal structure. Morphological studies indicated that the sample consisted of small grains with a size of about 2 micro-m. The dielectric properties of the material demonstrate its relaxor behavior near the ferroelectric transition temperature, TC = 457 K. The saturation and remnant polarization values of approximately 25.9 and 20.1 micro-C cm-2 were achieved for an electrically poled sample. Additionally, the poling induced a negative internal electric field of about -0.2 kV cm-1 was detected due to the presence of ferroelectric nano-grains in this bulk 65PMN-35PT sample. These observed characteristics of the pyrochlore-free 65PMN-35PT ceramic are similar to those of its single-crystal counterpart.
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Submitted 1 July, 2025;
originally announced July 2025.
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Novel Observation of Piezoelectricity in VO2
Authors:
Raktima Basu,
G. Mangamma,
Sandip Dhara
Abstract:
VO2 is well known for its dual phase transitions; electrical as well as structural, at a single temperature of 340K. The low temperature structural phases of VO2 are different from its high temperature counterpart by means of structural symmetry. The strain induced modification of the structural distortion in VO2 is studied in details. A ferroelectric type distortion is observed, and therefore, th…
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VO2 is well known for its dual phase transitions; electrical as well as structural, at a single temperature of 340K. The low temperature structural phases of VO2 are different from its high temperature counterpart by means of structural symmetry. The strain induced modification of the structural distortion in VO2 is studied in details. A ferroelectric type distortion is observed, and therefore, the piezoelectric effect in the low temperature phases of VO2 is investigated, for the first time, using piezo-response force microscopy. The electronic behavior of piezoelectric materials can be tuned with the application of mechanical strain and strain is the only factor to separate the two low-temperature phases, namely, M1 and M2 in the phase diagram of VO2. The piezo-electric coefficient in the strained phase of VO2 was found as 11-12 pm/V making it eligible for piezotronic applications.
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Submitted 15 September, 2021;
originally announced September 2021.
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Si and N - vacancy color centers in discrete diamond nanoparticles: Raman and fluorescence spectroscopic studies
Authors:
K. Ganesan,
P. K. Ajikumar,
S. Ilango,
G. Mangamma,
S. Dhara
Abstract:
The present study reports on an innovative method to prepare discrete diamond nanoparticles or nanodiamonds (NDs) with high structural and optical quality through top-down approach by controlled oxidation of pre-synthesized nanocrystalline diamond (NCD) film. These NDs are studied for their structural and optical properties using atomic force microscopy (AFM), Raman and fluorescence (FL) spectrosc…
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The present study reports on an innovative method to prepare discrete diamond nanoparticles or nanodiamonds (NDs) with high structural and optical quality through top-down approach by controlled oxidation of pre-synthesized nanocrystalline diamond (NCD) film. These NDs are studied for their structural and optical properties using atomic force microscopy (AFM), Raman and fluorescence (FL) spectroscopy. While AFM analysis confirms uniform distribution of discrete NDs with different sizes varying from a few tens of nanometers to about a micron, spectroscopic investigations reveal the presence of impurity - vacancy related color centers exhibiting FL at 637 and 738 nm as a function of particle size. In addition, an intense emission originating from vacancy centers associated with N and Si (SiV-) is observed for all NDs at the temperature close to liquid nitrogen. A detailed spectral analysis is carried out on the structural defects in these NDs. The full width at half maximum of diamond Raman band ( ~ 1332 cm-1) is found to be as narrow as 1.5 cm-1 which reveals the superior structural quality of these NDs. Further, mapping of diamond Raman and FL spectra of SiV- confirm the uniform distribution of NDs throughout the substrate. The narrow line widths and a minimal shift in peak positions of Raman and FL spectra endorse this aspect.
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Submitted 9 January, 2019;
originally announced January 2019.
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Piezoelectric Domains in the AlGaN Hexagonal Microrods: Effect of Crystal Orientations
Authors:
A. K. Sivadasan,
G. Mangamma,
S. Bera,
M. Kamruddin,
S. Dhara
Abstract:
Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piez…
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Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence study reveal the formation of AlGaN microrods in the wurtzite phase and ensures the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.
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Submitted 11 May, 2016;
originally announced May 2016.
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Reduction of residual stress in AlN thin Films synthesized by magnetron sputtering technique
Authors:
Padmalochan Panda,
R. Ramaseshan,
N Ravi,
G. Mangamma,
Feby Jose,
S. Dash,
K. Suzuki,
H. Suematsu
Abstract:
We report the reduction in residual stress of AlN thin films and also the crystal structure, surface morphology and nanomechanical properties of magnetron sputtered as a function of substrate temperature (Ts, 35 - 600 ?C). The residual stress of these films was calculated by sin2 technique and found that they are varying from tensile to compression with temperature (Ts). Evolution of crystalline g…
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We report the reduction in residual stress of AlN thin films and also the crystal structure, surface morphology and nanomechanical properties of magnetron sputtered as a function of substrate temperature (Ts, 35 - 600 ?C). The residual stress of these films was calculated by sin2 technique and found that they are varying from tensile to compression with temperature (Ts). Evolution of crystalline growth of AlN films was studied by GIXRD and transmission electron microscopy (TEM) and a preferred a-axis orientation was observed at 400 ?C. The cross-sectional TEM micrograph and selected area electron difraction (SAED) of this film exhibited a high degree of orientation as well as a columnar structure. Hardness (H) measured by Nanoindentation technique on these films ranged between 12.8 - 19 GPa.
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Submitted 3 May, 2016; v1 submitted 29 July, 2015;
originally announced July 2015.
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Multi-phonon Raman scattering in GaN nanowires
Authors:
S. Dhara,
Sharat Chandra,
G. Mangamma,
S. Kalavathi,
P. Shankar,
K. G. M. Nair,
A. K. Tyagi,
C. W. Hsu,
C. C. Kuo,
L. C. Chen,
K. H. Chen,
K. K. Sriram
Abstract:
UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic field of ionic bonded GaN gives rise to enhancement in LO phonon modes. Good crystalline quality, as indicated by the crystallographic as well as luminescence studies, is thought to be responsible for this significant…
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UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic field of ionic bonded GaN gives rise to enhancement in LO phonon modes. Good crystalline quality, as indicated by the crystallographic as well as luminescence studies, is thought to be responsible for this significant observation. Calculated size dependence, incorporating size corrected dielectric constants, of electron-phonon interaction energy agrees well with measured values and also predict stronger interaction energy than that of the bulk for diameter below ~3 nm.
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Submitted 16 August, 2007;
originally announced August 2007.
