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Magnetization relaxation and search for the magnetic gap in bulk-insulating V-doped (Bi, Sb)$_2$Te$_3$
Authors:
E. Golias,
E. Weschke,
T. Flanagan,
E. Schierle,
A. Richardella,
E. D. L. Rienks,
P. S. Mandal,
A. Varykhalov,
J. Sánchez-Barriga,
F. Radu,
N. Samarth,
O. Rader
Abstract:
V-doped (Bi,Sb)$_2$Te$_3$ has a ten times higher magnetic coercivity than its Cr-doped counterpart and therefore is believed to be a superior system for the quantum anomalous Hall effect (QAHE). The QAHE requires the opening of a magnetic band gap at the Dirac point. We do not find this gap by angle-resolved photoelectron spectroscopy down to 1 K. By x-ray magnetic circular dichroism (XMCD) we dir…
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V-doped (Bi,Sb)$_2$Te$_3$ has a ten times higher magnetic coercivity than its Cr-doped counterpart and therefore is believed to be a superior system for the quantum anomalous Hall effect (QAHE). The QAHE requires the opening of a magnetic band gap at the Dirac point. We do not find this gap by angle-resolved photoelectron spectroscopy down to 1 K. By x-ray magnetic circular dichroism (XMCD) we directly probe the magnetism at the V site and in zerofield. Hysteresis curves of the XMCD signal show a strong dependence of the coercivity on the ramping velocity of the magnetic field. The XMCD signal decays on a time scale of minutes which we conclude contributes to the absence of a detectable magnetic gap at the Dirac point.
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Submitted 14 October, 2020;
originally announced October 2020.
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Large magnetic gap at the Dirac point in a Mn-induced Bi$_2$Te$_3$ heterostructure
Authors:
E. D. L. Rienks,
S. Wimmer,
P. S. Mandal,
O. Caha,
J. Růžička,
A. Ney,
H. Steiner,
V. V. Volobuev,
H. Groiss,
M. Albu,
S. A. Khan,
J. Minár,
H. Ebert,
G. Bauer,
A. Varykhalov,
J. Sánchez-Barriga,
O. Rader,
G. Springholz
Abstract:
Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge states are hosted by a magnetic energy gap at the Dirac point but all attempts to observe it directly have been unsuccessful. The gap size is considered crucial to overcoming the present limitations of the QAHE, which so…
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Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge states are hosted by a magnetic energy gap at the Dirac point but all attempts to observe it directly have been unsuccessful. The gap size is considered crucial to overcoming the present limitations of the QAHE, which so far occurs only at temperatures one to two orders of magnitude below its principle limit set by the ferromagnetic Curie temperature $T_C$. Here, we use low temperature photoelectron spectroscopy to unambiguously reveal the magnetic gap of Mn-doped Bi$_2$Te$_3$ films, which is present only below $T_C$. Surprisingly, the gap turns out to be $\sim$90 meV wide, which not only exceeds $k_BT$ at room temperature but is also 5 times larger than predicted by density functional theory. By an exhaustive multiscale structure characterization we show that this enhancement is due to a remarkable structure modification induced by Mn doping. Instead of a disordered impurity system, it forms an alternating sequence of septuple and quintuple layer blocks, where Mn is predominantly incorporated in the septuple layers. This self-organized heterostructure substantially enhances the wave-function overlap and the size of the magnetic gap at the Dirac point, as recently predicted. Mn-doped Bi$_2$Se$_3$ forms a similar heterostructure, however, only a large, nonmagnetic gap is formed. We explain both differences based on the higher spin-orbit interaction in Bi$_2$Te$_3$ with the most important consequence of a magnetic anisotropy perpendicular to the films, whereas for Bi$_2$Se$_3$ the spin-orbit interaction it is too weak to overcome the dipole-dipole interaction. Our findings provide crucial insights for pushing the lossless transport properties of topological insulators towards room-temperature applications.
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Submitted 15 October, 2018;
originally announced October 2018.
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Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials
Authors:
B. A. Assaf,
T. Phuphachong,
E. Kampert,
V. V. Volobuev,
P. S. Mandal,
J. Sánchez-Barriga,
O. Rader,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation current. We perform pulsed and DC field measurements on Pb1-xSnxSe epilayers where the topological state can be chemically tuned. The NLMR is observed in the topological state, but is suppressed and becomes positive when…
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Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation current. We perform pulsed and DC field measurements on Pb1-xSnxSe epilayers where the topological state can be chemically tuned. The NLMR is observed in the topological state, but is suppressed and becomes positive when the system becomes trivial. In a topological material, the lowest N=0 conduction Landau level disperses down in energy as a function of increasing magnetic field, while the N=0 valence Landau level disperses upwards. This anomalous behavior is shown to be responsible for the observed NLMR. Our work provides an explanation of the outstanding question of NLMR in topological insulators and establishes this effect as a possible hallmark of bulk conduction in topological matter.
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Submitted 11 August, 2017; v1 submitted 6 April, 2017;
originally announced April 2017.
