Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100
Authors:
Sandeep Vura,
Shubham Kumar Parate,
Subhajit Pal,
Upanya Khandelwal,
Rajeev Kumar Rai,
Sri Harsha Molleti,
Vishnu Kumar,
Rama Satya Sandilya Ventrapragada,
Girish Patil,
Mudit Jain,
Ambresh Mallya,
Majid Ahmadi,
Bart Kooi,
Sushobhan Avasthi,
Rajeev Ranjan,
Srinivasan Raghavan,
Saurabh Chandorkar,
Pavan Nukala
Abstract:
Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values o…
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Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients (M31) at frequencies as large as 5 kHz (1.04 x 10-14 m2 per V2 at 1 kHz, and 3.87 x 10-15 m2 per V2 at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained even after cycling the devices >5000 times. Our perovskite films are non-ferroelectric, exhibit a different symmetry compared to stoichiometric BaTiO3 and are characterized by twin boundaries and nano polar-like regions. We show that the dielectric relaxation arising from the defect-induced features correlates very well with the observed giant electrostrictive response. These films show large coefficient of thermal expansion (2.36 x 10-5/K), which along with the giant M31 implies a considerable increase in the lattice anharmonicity induced by the defects. Our work provides a crucial step forward towards formulating guidelines to engineer large electromechanical responses even at higher frequencies in lead-free thin films.
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Submitted 6 March, 2023;
originally announced March 2023.
