Glassy low-energy spin fluctuations and anisotropy gap in La1.88Sr0.12CuO4
Authors:
A. T. Rømer,
J. Chang,
N. B. Christensen,
B. M. Andersen,
K. Lefmann,
L. Mähler,
J. Gavilano,
R. Gilardi,
Ch. Niedermayer,
H. M. Rønnow,
A. Schneidewind,
P. Link,
M. Oda,
M. Ido,
N. Momono,
J. Mesot
Abstract:
We present high-resolution triple-axis neutron scattering studies of the high-temperature superconductor La1.88Sr0.12CuO4 (Tc=27 K). The temperature dependence of the low-energy incommensurate magnetic fluctuations reveals distinctly glassy features. The glassiness is confirmed by the difference between the ordering temperature TN ~ Tc inferred from elastic neutron scattering and the freezing temp…
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We present high-resolution triple-axis neutron scattering studies of the high-temperature superconductor La1.88Sr0.12CuO4 (Tc=27 K). The temperature dependence of the low-energy incommensurate magnetic fluctuations reveals distinctly glassy features. The glassiness is confirmed by the difference between the ordering temperature TN ~ Tc inferred from elastic neutron scattering and the freezing temperature Tf ~ 11 K obtained from muon spin rotation studies. The magnetic field independence of the observed excitation spectrum as well as the observation of a partial suppression of magnetic spectral weight below 0.75 meV for temperatures smaller than Tf, indicate that the stripe frozen state is capable of supporting a spin anisotropy gap, of a magnitude similar to that observed in the spin and charge stripe ordered ground state of La1.875Ba0.125CuO4. The difference between TN and Tf implies that the significant enhancement in a magnetic field of nominally elastic incommensurate scattering is caused by strictly in-elastic scattering -- at least in the temperature range between Tf and Tc -- which is not resolved in the present experiment. Combining the results obtained from our study of La1.88Sr0.12CuO4 with a critical reappraisal of published neutron scattering work on samples with chemical composition close to p=0.12, where local probes indicate a sharp maximum in Tf(p), we arrive at the view that the low-energy fluctuations are strongly dependent on composition in this regime, with anisotropy gaps dominating only sufficiently close to p=0.12 and superconducting spin gaps dominating elsewhere.
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Submitted 4 April, 2013;
originally announced April 2013.
Lasing in planar semiconductor diodes
Authors:
Giorgio De Simoni,
Lukas Mahler,
Vincenzo Piazza,
Alessandro Tredicucci,
Christine A. Nicoll,
Harvey E. Beere,
David A. Ritchie,
Fabio Beltram
Abstract:
We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed.
We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed.
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Submitted 7 November, 2011;
originally announced November 2011.
