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Frictional magneto-Coulomb drag in graphene double-layer heterostructure
Authors:
Xiaomeng Liu,
Lei Wang,
Kin Chung Fong,
Yuanda Gao,
Patrick Maher,
Kenji Watanabe,
Takashi Taniguchi,
James Hone,
Cory Dean,
Philip Kim
Abstract:
Coulomb interaction between two closely spaced parallel layers of electron system can generate the frictional drag effect by interlayer Coulomb scattering. Employing graphene double layers separated by few layer hexagonal boron nitride (hBN), we investigate density tunable magneto- and Hall-drag under strong magnetic fields. The observed large magneto-drag and Hall-drag signals can be related with…
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Coulomb interaction between two closely spaced parallel layers of electron system can generate the frictional drag effect by interlayer Coulomb scattering. Employing graphene double layers separated by few layer hexagonal boron nitride (hBN), we investigate density tunable magneto- and Hall-drag under strong magnetic fields. The observed large magneto-drag and Hall-drag signals can be related with Laudau level (LL) filling status of the drive and drag layers. We find that the sign and magnitude of the magneto- and Hall-drag resistivity tensor can be quantitatively correlated to the variation of magneto-resistivity tensors in the drive and drag layers, confirming a theoretical formula for magneto-drag in the quantum Hall regime. The observed weak temperature dependence and $\sim B^2$ dependence of the magneto-drag are qualitatively explained by Coulomb scattering phase-space argument.
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Submitted 25 December, 2016;
originally announced December 2016.
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Tunable Fractional Quantum Hall Phases in Bilayer Graphene
Authors:
Patrick Maher,
Lei Wang,
Yuanda Gao,
Carlos Forsythe,
Takashi Taniguchi,
Kenji Watanabe,
Dmitry Abanin,
Zlatko Papić,
Paul Cadden-Zimansky,
James Hone,
Philip Kim,
Cory R. Dean
Abstract:
Symmetry breaking in a quantum system often leads to complex emergent behavior. In bilayer graphene (BLG), an electric field applied perpendicular to the basal plane breaks the inversion symmetry of the lattice, opening a band gap at the charge neutrality point. In a quantizing magnetic field electron interactions can cause spontaneous symmetry breaking within the spin and valley degrees of freedo…
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Symmetry breaking in a quantum system often leads to complex emergent behavior. In bilayer graphene (BLG), an electric field applied perpendicular to the basal plane breaks the inversion symmetry of the lattice, opening a band gap at the charge neutrality point. In a quantizing magnetic field electron interactions can cause spontaneous symmetry breaking within the spin and valley degrees of freedom, resulting in quantum Hall states (QHS) with complex order. Here we report fractional quantum Hall states (FQHS) in bilayer graphene which show phase transitions that can be tuned by a transverse electric field. This result provides a model platform to study the role of symmetry breaking in emergent states with distinct topological order.
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Submitted 9 March, 2014;
originally announced March 2014.
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Hofstadter's butterfly in moire superlattices: A fractal quantum Hall effect
Authors:
C. R. Dean,
L. Wang,
P. Maher,
C. Forsythe,
F. Ghahari,
Y. Gao,
J. Katoch,
M. Ishigami,
P. Moon,
M. Koshino,
T. Taniguchi,
K. Watanabe,
K. L. Shepard,
J. Hone,
P. Kim
Abstract:
Electrons moving through a spatially periodic lattice potential develop a quantized energy spectrum consisting of discrete Bloch bands. In two dimensions, electrons moving through a magnetic field also develop a quantized energy spectrum, consisting of highly degenerate Landau energy levels. In 1976 Douglas Hofstadter theoretically considered the intersection of these two problems and discovered t…
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Electrons moving through a spatially periodic lattice potential develop a quantized energy spectrum consisting of discrete Bloch bands. In two dimensions, electrons moving through a magnetic field also develop a quantized energy spectrum, consisting of highly degenerate Landau energy levels. In 1976 Douglas Hofstadter theoretically considered the intersection of these two problems and discovered that 2D electrons subjected to both a magnetic field and a periodic electrostatic potential exhibit a self-similar recursive energy spectrum. Known as Hofstadter's butterfly, this complex spectrum results from a delicate interplay between the characteristic lengths associated with the two quantizing fields, and represents one of the first quantum fractals discovered in physics. In the decades since, experimental attempts to study this effect have been limited by difficulties in reconciling the two length scales. Typical crystalline systems (<1 nm periodicity) require impossibly large magnetic fields to reach the commensurability condition, while in artificially engineered structures (>100 nm), the corresponding fields are too small to completely overcome disorder. Here we demonstrate that moire superlattices arising in bilayer graphene coupled to hexagonal boron nitride provide a nearly ideal-sized periodic modulation, enabling unprecedented experimental access to the fractal spectrum. We confirm that quantum Hall effect features associated with the fractal gaps are described by two integer topological quantum numbers, and report evidence of their recursive structure. Observation of Hofstadter's spectrum in graphene provides the further opportunity to investigate emergent behaviour within a fractal energy landscape in a system with tunable internal degrees of freedom.
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Submitted 19 December, 2012;
originally announced December 2012.
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Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene
Authors:
Patrick Maher,
Cory R. Dean,
Andrea F. Young,
Takashi Taniguchi,
Kenji Watanabe,
Kenneth L. Shepard,
James Hone,
Philip Kim
Abstract:
The most celebrated property of the quantum spin Hall effect is the presence of spin-polarized counter-propagating edge states. This novel edge state configuration has also been predicted to occur in graphene when spin-split electron- and hole-like Landau levels are forced to cross at the edge of the sample. In particular, a quantum spin Hall analogue has been predicted at ν=0 in bilayer graphene…
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The most celebrated property of the quantum spin Hall effect is the presence of spin-polarized counter-propagating edge states. This novel edge state configuration has also been predicted to occur in graphene when spin-split electron- and hole-like Landau levels are forced to cross at the edge of the sample. In particular, a quantum spin Hall analogue has been predicted at ν=0 in bilayer graphene if the ground state is a spin ferromagnet. Previous studies have demonstrated that the bilayer ν=0 state is an insulator in a perpendicular magnetic field, though the exact nature of this state has not been identified. Here we present measurements of the ν=0 state in a dual-gated bilayer graphene device in tilted magnetic field. The application of an in-plane magnetic field and perpendicular electric field allows us to map out a full phase diagram of the ν=0 state as a function of experimentally tunable parameters. At large in-plane magnetic field we observe a quantum phase transition to a metallic state with conductance of order 4e^2/h, consistent with predictions for the ferromagnet.
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Submitted 16 February, 2013; v1 submitted 16 December, 2012;
originally announced December 2012.
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Multiband Transport in Bilayer Graphene at High Carrier Densities
Authors:
Dmitri K. Efetov,
Patrick Maher,
Simas Glinskis,
Philip Kim
Abstract:
We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples at carrier densities $|n|\geq2.4\times 10^{13}$ cm$^{-2}$. We observe a sudden increase of resistance and the onset of a second family of Shubnikov de Haas (Sd…
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We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples at carrier densities $|n|\geq2.4\times 10^{13}$ cm$^{-2}$. We observe a sudden increase of resistance and the onset of a second family of Shubnikov de Haas (SdH) oscillations as these high energy subbands are populated. From simultaneous Hall and magnetoresistance measurements together with SdH oscillations in the multiband conduction regime, we deduce the carrier densities and mobilities for the higher energy bands separately and find the mobilities to be at least a factor of two higher than those in the low energy bands.
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Submitted 31 May, 2011;
originally announced June 2011.
