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Thin Film Synthesis, Structural Analysis, and Magnetic Properties of Novel Ternary Transition Metal Nitride MnCoN2
Authors:
Sita Dugu,
Rebecca W Smaha,
Shaham Quadir,
Andrew Treglia,
Shaun ODonnell,
Julia Martin,
Sharad Mahatara,
Glenn Teeter,
Stephan Lany,
James R Neilson,
Sage R Bauers
Abstract:
Recent high-throughput computational searches have predicted many novel ternary nitride compounds providing new opportunities for materials discovery in under explored phase spaces. Nevertheless, there are hardly any predictions and/or syntheses that incorporate only transition metals into new ternary nitrides. Here, we report on the synthesis, structure, and properties of MnCoN$_2$, a new ternary…
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Recent high-throughput computational searches have predicted many novel ternary nitride compounds providing new opportunities for materials discovery in under explored phase spaces. Nevertheless, there are hardly any predictions and/or syntheses that incorporate only transition metals into new ternary nitrides. Here, we report on the synthesis, structure, and properties of MnCoN$_2$, a new ternary nitride material comprising only transition metals and N. We find that crystalline MnCoN$_2$ can be stabilized over its competing binaries, and over a tendency of this system to become amorphous, by controlling growth temperature within a narrow window slightly above ambient condition. We find that single-phase MnCoN$_2$ thin films form in a cation-disordered rocksalt crystal structure, which is supported by ab-initio calculations. X-ray photoelectron spectroscopy analysis suggests that MnCoN$_2$ is sensitive to oxygen through various oxides and hydroxides binding to cobalt on the surface. X-ray absorption spectroscopy is used to verify that Mn$^{3+}$ and Co$^{3+}$ cations exist in an octahedrally-coordinated environment, which is distinct from a combination of CoN and MnN binaries and in agreement with the rocksalt-based crystal structure prediction. Magnetic measurements suggest that MnCoN$_2$ has a canted antiferromagnetic ground state below 10 K. We extract a Weiss temperature of $θ$ = -49.7 K, highlighting the antiferromagnetic correlations in MnCoN$_2$.
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Submitted 20 June, 2024;
originally announced June 2024.
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High Mobility Two-Dimensional Electron Gas at the BaSnO$_{3}$/SrNbO$_{3}$ Interface
Authors:
Sharad Mahatara,
Suresh Thapa,
Hanjong Paik,
Ryan Comes,
Boris Kiefer
Abstract:
Oxide two-dimensional electron gases (2DEGs) promise high charge carrier concentrations and low-loss electronic transport in semiconductors such as BaSnO$_{3}$ (BSO). ACBN0 computations for BSO/SrNbO$_{3}$ (SNO) interfaces show Nb-4$\textit{d}$ electron injection into extended Sn-5$\textit{s}$ electronic states. The conduction band minimum consists of Sn-5$\textit{s}$ states ~1.2 eV below the Ferm…
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Oxide two-dimensional electron gases (2DEGs) promise high charge carrier concentrations and low-loss electronic transport in semiconductors such as BaSnO$_{3}$ (BSO). ACBN0 computations for BSO/SrNbO$_{3}$ (SNO) interfaces show Nb-4$\textit{d}$ electron injection into extended Sn-5$\textit{s}$ electronic states. The conduction band minimum consists of Sn-5$\textit{s}$ states ~1.2 eV below the Fermi level for intermediate thickness 6-unit cell BSO/6-unit cell SNO superlattices, corresponding to an electron density in BSO of ~10$^{21}$ cm$^{-3}$. Experimental studies of analogous SNO/BSO interfaces grown by molecular beam epitaxy confirm significant charge transfer from SNO to BSO. $\textit {In situ}$ angle-resolved X-ray photoelectron spectroscopy studies show an electron density of ~4 $\times$ 10$^{21}$ cm$^{-3}$. The consistency of theory and experiment shows that BSO/SNO interfaces provide a novel materials platform for low loss electron transport in 2DEGs.
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Submitted 23 June, 2022;
originally announced June 2022.
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AFLOW$π$: A minimalist approach to high-throughput ab initio calculations including the generation of tight-binding hamiltonians
Authors:
A. R. Supka,
T. E. Lyons,
L. Liyanage,
P. D'Amico,
R. Al Rahal Al Orabi,
S. Mahatara,
P. Gopal,
C. Toher,
D. Ceresoli,
A. Calzolari,
S. Curtarolo,
M. Buongiorno Nardelli,
M. Fornari
Abstract:
Tight-binding models provide a conceptually transparent and computationally efficient method to represent the electronic properties of materials. With AFLOW$π$ we introduce a framework for high-throughput first principles calculations that automatically generates tight-binding hamiltonians without any additional input. Several additional features are included in AFLOW$π$ with the intent to simplif…
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Tight-binding models provide a conceptually transparent and computationally efficient method to represent the electronic properties of materials. With AFLOW$π$ we introduce a framework for high-throughput first principles calculations that automatically generates tight-binding hamiltonians without any additional input. Several additional features are included in AFLOW$π$ with the intent to simplify the self-consistent calculation of Hubbard U corrections, the calculations of phonon dispersions, elastic properties, complex dielectric constants, and electronic transport coefficients. As examples we show how to compute the optical properties of layered nitrides in the $AM$N$_2$ family, and the elastic and vibrational properties of binary halides with CsCl and NaCl structure.
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Submitted 24 January, 2017;
originally announced January 2017.
