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Meta-GGA dielectric-dependent and range-separated screened hybrid functional for reliable prediction of material properties
Authors:
Subrata Jana,
Abhishek Bhattacharjee,
Suman Mahakal,
Szymon Smiga,
Prasanjit Samal
Abstract:
We propose a range-separated hybrid exchange-correlation functional to calculate solid-state material properties. The functional mixes Hartree-Fock exchange with the semilocal exchange of the meta-generalized gradient approximation (meta-GGA) and the fraction of Hartree-Fock exchange is determined from the dielectric function. First-principles calculations and comparison with other meta-GGA approx…
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We propose a range-separated hybrid exchange-correlation functional to calculate solid-state material properties. The functional mixes Hartree-Fock exchange with the semilocal exchange of the meta-generalized gradient approximation (meta-GGA) and the fraction of Hartree-Fock exchange is determined from the dielectric function. First-principles calculations and comparison with other meta-GGA approximations show that the functional leads to reasonably good performance for the band gap and optical properties. We also show that the present functional also successfully resolves the well-known ``band gap problem'' of narrow gap Cu-based semiconductors, such as Cu3SbSe4 and Cu3AsSe4, where, in general, a considerably large band inversion energy leads to a ``false'' negative or metallic band gap for all other methods. Furthermore, reasonable accuracy for the occupied d-bands and transition energies is also obtained for bulk solids. Thus, overall, our results demonstrate the predictive power of range-separated meta-GGA hybrid functionals for quantum materials simulations.
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Submitted 25 February, 2025;
originally announced February 2025.
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Drastic modification in thermal conductivity of TiCoSb Half-Heusler alloy: Phonon engineering by lattice softening and ionic polarization
Authors:
Suman Mahakal,
Avijit Jana,
Diptasikha Das,
Nabakumar Rana,
Pallabi Sardar,
Shamima Hussain,
Santanu K. Maiti,
Kartick Malik
Abstract:
A drastic variation (~47%) in thermal conductivity (\k{appa}) for synthesized samples (TiCoSb1+x, x=0.0, 0.01, 0.02, 0.03, 0.04, and 0.06) is observed. The lowest \k{appa} is reported for the TiCoSb1.02 sample. Thermal variation of \k{appa} is estimated from the temperature and power-dependent Raman spectroscopy data. Embedded phases and Co vacancy are analysed, employing scanning electron microsc…
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A drastic variation (~47%) in thermal conductivity (\k{appa}) for synthesized samples (TiCoSb1+x, x=0.0, 0.01, 0.02, 0.03, 0.04, and 0.06) is observed. The lowest \k{appa} is reported for the TiCoSb1.02 sample. Thermal variation of \k{appa} is estimated from the temperature and power-dependent Raman spectroscopy data. Embedded phases and Co vacancy are analysed, employing scanning electron microscopy and transmission electron microscopy data. X-ray absorption fine structure (XAFS) spectroscopy reveals the Co vacancy in synthesized samples, and the most ordered phase is TiCoSb1.02 amid the synthesized samples. X-ray photoelectron spectroscopy measurement of the synthesized samples provides direct evidence of Co vacancies and their increase with Sb concentration (x). Lattice dynamics are revealed using Raman Spectroscopy (RS) measurements. RS data accomplishes that variation in \k{appa} as a function of Sb concentration is observed owing to an alteration in phonon group velocity, related to lattice softening. The polar nature of the TiCoSb half-Heusler (HH) sample is revealed. Longitudinal Optical and Transvers Optical phonon (LO-TO) splitting in RS is observed due to the polar nature of TiCoSb1+x synthesized samples. Tailoring in LO-TO splitting due to the screening effect, correlated with Co vacancies, is reported for TiCoSb1+x synthesized samples. Lattice softening and LO-TO splitting lead to a minimum \k{appa} for the TiCoSb1.02 synthesized sample.
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Submitted 27 May, 2025; v1 submitted 22 May, 2024;
originally announced May 2024.
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Transport phenomena of TiCoSb: Defects induced modification in structure and density of states
Authors:
S. Mahakal,
Diptasikha Das,
Pintu Singha,
Aritra Banerjee,
S. Chatterjee,
Santanu K. Maiti,
S. Assa Aravindh,
K. Malik
Abstract:
TiCoSb1+x (x=0.0, 0.01, 0.02, 0.03, 0.04, 0.06) samples have been synthesized, employing solid state reaction method followed by arc menting. Theoretical calculations, using Density Functional Theory (DFT) have been performed to estimate band structure and density of states (DOS). Further, energitic calculations, using first principle have been carried out to reveal the formation energy for vacanc…
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TiCoSb1+x (x=0.0, 0.01, 0.02, 0.03, 0.04, 0.06) samples have been synthesized, employing solid state reaction method followed by arc menting. Theoretical calculations, using Density Functional Theory (DFT) have been performed to estimate band structure and density of states (DOS). Further, energitic calculations, using first principle have been carried out to reveal the formation energy for vacancy, interstitial, anti-site defects. Detail structural calculation, employing Rietveld refinement reveals the presence of embedded phases, vacancy and interstitial atom, which is also supported by the theoretical calculations. Lattice strain, crystalline size and dislocation density have been estimated by Williamson-Hall and modified Williamson-Hall methods. Thermal variation of resistivity [\r{ho}(T)] and thermopower [S(T)] have been explained using Mott equation and density of states (DOS) modification near the Fermi surface due to Co vancancy and embedded phases. Figure of merit (ZT) has been calculated and 4 to 5 times higher ZT for TiCoSb than earlier reported value is obtained at room temperature.
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Submitted 24 May, 2023;
originally announced May 2023.
