Magnesium-vacancy optical centers in diamond
Authors:
Emilio Corte,
Greta Andrini,
Elena Nieto Hernández,
Vanna Pugliese,
Ângelo Costa,
Goele Magchiels,
Janni Moens,
Shandirai Malven Tunhuma,
Renan Villarreal,
Lino M. C. Pereira,
André Vantomme,
João Guilherme Correia,
Ettore Bernardi,
Paolo Traina,
Ivo Pietro Degiovanni,
Ekaterina Moreva,
Marco Genovese,
Sviatoslav Ditalia Tchernij,
Paolo Olivero,
Ulrich Wahl,
Jacopo Forneris
Abstract:
We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the…
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We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the identification of a major fraction of Mg atoms (~30-42%) in sites which are compatible with the split-vacancy structure of the MgV complex. A smaller fraction of Mg atoms (~13-17%) was found on substitutional sites. The photoluminescence emission was investigated both at the ensemble and individual defect level in a temperature range comprised between 5 K and 300 K, offering a detailed picture of the MgV-related emission properties and revealing the occurrence of previously unreported spectral features. The optical excitability of the MgV center was also studied as a function of the optical excitation wavelength enabling to identify the optimal conditions for photostable and intense emission. The results are discussed in the context of the preliminary experimental data and the theoretical models available in the literature, with appealing perspectives for the utilization of the tunable properties of the MgV center for quantum information processing applications.
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Submitted 17 June, 2022;
originally announced June 2022.
Room-temperature control and electrical readout of individual nitrogen-vacancy nuclear spins
Authors:
Michal Gulka,
Daniel Wirtitsch,
Viktor Ivády,
Jelle Vodnik,
Jaroslav Hruby,
Goele Magchiels,
Emilie Bourgeois,
Adam Gali,
Michael Trupke,
Milos Nesladek
Abstract:
Nuclear spins in semiconductors are leading candidates for quantum technologies, including quantum computation, communication, and sensing. Nuclear spins in diamond are particularly attractive due to their extremely long coherence lifetime. With the nitrogen-vacancy (NV) centre, such nuclear qubits benefit from an auxiliary electronic qubit, which has enabled entanglement mediated by photonic link…
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Nuclear spins in semiconductors are leading candidates for quantum technologies, including quantum computation, communication, and sensing. Nuclear spins in diamond are particularly attractive due to their extremely long coherence lifetime. With the nitrogen-vacancy (NV) centre, such nuclear qubits benefit from an auxiliary electronic qubit, which has enabled entanglement mediated by photonic links. The transport of quantum information by the electron itself, via controlled transfer to an adjacent centre or via the dipolar interaction, would enable even faster and smaller processors, but optical readout of arrays of such nodes presents daunting challenges due to the required sub-diffraction inter-site distances. Here, we demonstrate the electrical readout of a basic unit of such systems - a single 14N nuclear spin coupled to the NV electron. Our results provide the key ingredients for quantum gate operations and electrical readout of nuclear qubit registers, in a manner compatible with nanoscale electrode structures. This demonstration is therefore a milestone towards large-scale diamond quantum devices with semiconductor scalability.
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Submitted 12 January, 2021;
originally announced January 2021.
