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Distributed Equivariant Graph Neural Networks for Large-Scale Electronic Structure Prediction
Authors:
Manasa Kaniselvan,
Alexander Maeder,
Chen Hao Xia,
Alexandros Nikolaos Ziogas,
Mathieu Luisier
Abstract:
Equivariant Graph Neural Networks (eGNNs) trained on density-functional theory (DFT) data can potentially perform electronic structure prediction at unprecedented scales, enabling investigation of the electronic properties of materials with extended defects, interfaces, or exhibiting disordered phases. However, as interactions between atomic orbitals typically extend over 10+ angstroms, the graph…
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Equivariant Graph Neural Networks (eGNNs) trained on density-functional theory (DFT) data can potentially perform electronic structure prediction at unprecedented scales, enabling investigation of the electronic properties of materials with extended defects, interfaces, or exhibiting disordered phases. However, as interactions between atomic orbitals typically extend over 10+ angstroms, the graph representations required for this task tend to be densely connected, and the memory requirements to perform training and inference on these large structures can exceed the limits of modern GPUs. Here we present a distributed eGNN implementation which leverages direct GPU communication and introduce a partitioning strategy of the input graph to reduce the number of embedding exchanges between GPUs. Our implementation shows strong scaling up to 128 GPUs, and weak scaling up to 512 GPUs with 87% parallel efficiency for structures with 3,000 to 190,000 atoms on the Alps supercomputer.
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Submitted 4 July, 2025;
originally announced July 2025.
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Learning the Electronic Hamiltonian of Large Atomic Structures
Authors:
Chen Hao Xia,
Manasa Kaniselvan,
Alexandros Nikolaos Ziogas,
Marko Mladenović,
Rayen Mahjoub,
Alexander Maeder,
Mathieu Luisier
Abstract:
Graph neural networks (GNNs) have shown promise in learning the ground-state electronic properties of materials, subverting ab initio density functional theory (DFT) calculations when the underlying lattices can be represented as small and/or repeatable unit cells (i.e., molecules and periodic crystals). Realistic systems are, however, non-ideal and generally characterized by higher structural com…
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Graph neural networks (GNNs) have shown promise in learning the ground-state electronic properties of materials, subverting ab initio density functional theory (DFT) calculations when the underlying lattices can be represented as small and/or repeatable unit cells (i.e., molecules and periodic crystals). Realistic systems are, however, non-ideal and generally characterized by higher structural complexity. As such, they require large (10+ Angstroms) unit cells and thousands of atoms to be accurately described. At these scales, DFT becomes computationally prohibitive, making GNNs especially attractive. In this work, we present a strictly local equivariant GNN capable of learning the electronic Hamiltonian (H) of realistically extended materials. It incorporates an augmented partitioning approach that enables training on arbitrarily large structures while preserving local atomic environments beyond boundaries. We demonstrate its capabilities by predicting the electronic Hamiltonian of various systems with up to 3,000 nodes (atoms), 500,000+ edges, ~28 million orbital interactions (nonzero entries of H), and $\leq$0.53% error in the eigenvalue spectra. Our work expands the applicability of current electronic property prediction methods to some of the most challenging cases encountered in computational materials science, namely systems with disorder, interfaces, and defects.
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Submitted 6 June, 2025; v1 submitted 31 January, 2025;
originally announced January 2025.
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Electron-Electron Interactions in Device Simulation via Non-equilibrium Green's Functions and the GW Approximation
Authors:
Leonard Deuschle,
Jiang Cao,
Alexandros Nikolaos Ziogas,
Anders Winka,
Alexander Maeder,
Nicolas Vetsch,
Mathieu Luisier
Abstract:
The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller channel cross sections. This development is associated with reduced screening of long-range Coulomb interactions. To accurately predict the behavior of such ultra-scaled devices, electron-electron (e-e) interactions mus…
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The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller channel cross sections. This development is associated with reduced screening of long-range Coulomb interactions. To accurately predict the behavior of such ultra-scaled devices, electron-electron (e-e) interactions must be explicitly incorporated in their quantum transport simulation. In this paper, we present an \textit{ab initio} atomistic simulation framework based on density functional theory, the non-equilibrium Green's function formalism, and the self-consistent GW approximation to perform this task. The implemented method is first validated with a carbon nanotube test structure before being applied to calculate the transfer characteristics of a silicon nanowire MOSFET in a gate-all-around configuration. As a consequence of e-e scattering, the energy and spatial distribution of the carrier and current densities both significantly change, while the on-current of the transistor decreases owing to the Coulomb repulsion between the electrons. Furthermore, we demonstrate how the resulting bandgap modulation of the nanowire channel as a function of the gate-to-source voltage could potentially improve the device performance. To the best of our knowledge, this study is the first one reporting large-scale atomistic quantum transport simulations of nano-devices under non-equilibrium conditions and in the presence of e-e interactions within the GW approximation.
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Submitted 17 December, 2024;
originally announced December 2024.
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Influence of Carrier-Carrier Interactions on the Sub-threshold Swing of Band-to-Band Tunnelling Transistors
Authors:
Chen Hao Xia,
Leonard Deuschle,
Jiang Cao,
Alexander Maeder,
Mathieu Luisier
Abstract:
Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room temperature. Previous theoretical studies identified Auger processes as possible mechanisms for the observed degradation of SS. Through first-principles quantum tran…
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Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room temperature. Previous theoretical studies identified Auger processes as possible mechanisms for the observed degradation of SS. Through first-principles quantum transport simulations incorporating carrier-carrier interactions within the Non-equilibrium Green's Function formalism and self-consistent GW approximation, we confirm here that Auger processes are indeed at least partly responsible for the poor performance of TFETs. Using a carbon nanotube TFET as testbed, we show that carrier-carrier scattering alone significantly increases the OFF-state current of these devices, thus worsening their sub-threshold behavior.
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Submitted 30 October, 2024;
originally announced October 2024.
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Broadband photon pair generation from a single lithium niobate microcube
Authors:
Ngoc My Hanh Duong,
Gregoire Saerens,
Flavia Timpu,
Maria Teresa Buscaglia,
Vincenzo Buscaglia,
Andrea Morandi,
Jolanda S. Muller,
Andreas Maeder,
Fabian Kaufmann,
Alexander Sonltsev,
Rachel Grange
Abstract:
Nonclassical light sources are highly sought after as they are an integral part of quantum communication and quantum computation devices. Typical sources rely on bulk crystals that are not compact and have limited bandwidth due to phase-matching conditions. In this work, we demonstrate the generation of photon pairs from a free-standing lithium niobate microcube at the telecommunication wavelength…
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Nonclassical light sources are highly sought after as they are an integral part of quantum communication and quantum computation devices. Typical sources rely on bulk crystals that are not compact and have limited bandwidth due to phase-matching conditions. In this work, we demonstrate the generation of photon pairs from a free-standing lithium niobate microcube at the telecommunication wavelength through the spontaneous parametric down-conversion process. The maximum photon pair generation rate obtained from a single microcube with the size of ~4 microns is ~80 Hz, resulting in an efficiency of ~1.2 GHz/Wm per unit volume, which is an order of magnitude higher than the efficiency of photon-pair generation in bulky nonlinear crystals. The microcubes are synthesized through a solvothermal method, offering the possibility for scalable devices via bottom-up assembly. Our work constitutes an important step forward in the realization of compact nonclassical light sources with broadband tunability for various applications in quantum communication, quantum computing, and quantum metrology.
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Submitted 17 September, 2021;
originally announced September 2021.
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Localization and band-gap pinning in semiconductor superlattices with layer-thickness fluctuations
Authors:
K. A. Mader,
A. Zunger
Abstract:
We consider (AlAs)_n/(GaAs)_n superlattices with random thickness fluctuations Delta-n around the nominal period n. Using three-dimensional pseudopotential plane-wave band theory, we show that (i) any amount Delta-n/n of thickness fluctuations leads to band-edge wavefunction localization, (ii) for small Delta-n/n the SL band gap is pinned at the gap level produced by a single layer with ``wrong'…
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We consider (AlAs)_n/(GaAs)_n superlattices with random thickness fluctuations Delta-n around the nominal period n. Using three-dimensional pseudopotential plane-wave band theory, we show that (i) any amount Delta-n/n of thickness fluctuations leads to band-edge wavefunction localization, (ii) for small Delta-n/n the SL band gap is pinned at the gap level produced by a single layer with ``wrong'' thickness n + Delta-n, (iii) the bound states due to monolayer thickness fluctuations lead to significant band-gap reductions, (iv) <001> AlAs/GaAs SL's with monolayer thickness fluctuations have a direct band gap, while the ideal <001> SL's are indirect for n<4.
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Submitted 27 July, 1995;
originally announced July 1995.
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Electronic structure of intentionally disordered AlAs/GaAs superlattices
Authors:
K. A. Mader,
L. -W. Wang,
A. Zunger
Abstract:
We use realistic pseudopotentials and a plane-wave basis to study the electronic structure of non-periodic, three-dimensional, 2000-atom (AlAs)_n/(GaAs)_m (001) superlattices, where the individual layer thicknesses n,m = {1,2,3} are randomly selected. We find that while the band gap of the equivalent (n = m = 2) ordered superlattice is indirect, random fluctuations in layer thicknesses lead to a d…
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We use realistic pseudopotentials and a plane-wave basis to study the electronic structure of non-periodic, three-dimensional, 2000-atom (AlAs)_n/(GaAs)_m (001) superlattices, where the individual layer thicknesses n,m = {1,2,3} are randomly selected. We find that while the band gap of the equivalent (n = m = 2) ordered superlattice is indirect, random fluctuations in layer thicknesses lead to a direct gap in the planar Brillouin zone, strong wavefunction localization along the growth direction, short radiative lifetimes, and a significant band-gap reduction, in agreement with experiments on such intentionally grown disordered superlattices.
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Submitted 24 January, 1995; v1 submitted 23 January, 1995;
originally announced January 1995.
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Effects of atomic clustering on the optical properties of III-V alloys
Authors:
Kurt A. Mader,
Alex Zunger
Abstract:
Self-consistent electronic structure calculations together with a structural model are used to study the effect of short-range atomic order on the optical properties of otherwise random Al(0.5)Ga(0.5)As, Ga(0.5)In(0.5)P, and Al(0.5)In(0.5)As alloys. We find that clustering can reduce the direct band gap of these alloys by as much as 100 meV. Furthermore, sufficiently strong clustering is predict…
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Self-consistent electronic structure calculations together with a structural model are used to study the effect of short-range atomic order on the optical properties of otherwise random Al(0.5)Ga(0.5)As, Ga(0.5)In(0.5)P, and Al(0.5)In(0.5)As alloys. We find that clustering can reduce the direct band gap of these alloys by as much as 100 meV. Furthermore, sufficiently strong clustering is predicted to transform Al(0.5)Ga(0.5)As into a direct gap material.
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Submitted 5 April, 1994;
originally announced April 1994.
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Electronic Structure and Bonding in Epitaxially Stabilized Cubic Iron Silicides
Authors:
K. A. Mader,
H. von Kanel,
A. Baldereschi
Abstract:
We present an ab initio full-potential linearized augmented plane-wave (FLAPW) study of the structural and electronic properties of the two bulk unstable compounds FeSi (CsCl structure) and FeSi$_2$ (CaF$_2$ structure) which have recently been grown by molecular beam epitaxy on Si(111). We obtain equilibrium bulk lattice constants of 2.72 Å and 5.32 Å for FeSi and FeSi$_2$, respectively. The den…
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We present an ab initio full-potential linearized augmented plane-wave (FLAPW) study of the structural and electronic properties of the two bulk unstable compounds FeSi (CsCl structure) and FeSi$_2$ (CaF$_2$ structure) which have recently been grown by molecular beam epitaxy on Si(111). We obtain equilibrium bulk lattice constants of 2.72 Å and 5.32 Å for FeSi and FeSi$_2$, respectively. The density of states (DOS) of FeSi agrees well with experiment, and shows metallic behavior. In agreement with a previous calculation the DOS of FeSi$_2$ shows a large density of $d$-states at the Fermi level, explaining the instability of the bulk phase. The electron charge distributions reveal a small charge transfer from Si to Fe atomic spheres in both compounds. While in FeSi the Fe-Si bond is indeed partially ionic, we show that in FeSi$_2$ the electron distribution corresponds to a covalent charge accumulation in the Fe-Si bond region. The reversed order of $d$-bands in FeSi with respect to FeSi$_2$ is understood in terms of crystal field splitting and Fe-Fe nearest neighbor $dd$-interactions in the CsCl structure, and a strong Si $p$/Fe $d$ bonding in the fluorite structure, respectively.
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Submitted 11 May, 1993;
originally announced May 1993.
