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Giant Fine Structure Splitting of the Bright Exciton in a Bulk MAPbBr$_3$ Single Crystal
Authors:
Michal Baranowski,
Krzysztof Galkowski,
Alessandro Surrente,
Joanna M. Urban,
Łukasz Klopotowski,
Sebastian Mackowski,
Duncan K. Maude,
Rim Ben Aich,
Kais Boujdaria,
Maria Chamarro,
Christophe Testelin,
Pabitra Nayak,
Markus Dollmann,
Henry J. Snaith,
Robin J. Nicholas,
Paulina Plochocka
Abstract:
Exciton fine structure splitting in semiconductors reflects the underlying symmetry of the crystal and quantum confinement. Since the latter factor strongly enhances the exchange interaction, most work has focused on nanostructures. Here, we report on the first observation of the bright exciton fine structure splitting in a bulk semiconductor crystal, where the impact of quantum confinement can be…
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Exciton fine structure splitting in semiconductors reflects the underlying symmetry of the crystal and quantum confinement. Since the latter factor strongly enhances the exchange interaction, most work has focused on nanostructures. Here, we report on the first observation of the bright exciton fine structure splitting in a bulk semiconductor crystal, where the impact of quantum confinement can be specifically excluded, giving access to the intrinsic properties of the material. Detailed investigation of the exciton photoluminescence and reflection spectra of a bulk methylammonium lead tribromide single crystal reveals a zero magnetic field splitting as large as $\sim 200μ$eV. This result provides an important starting point for the discussion of the origin of the large bright exciton fine structure observed in perovskite nanocrystals.
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Submitted 13 September, 2019;
originally announced September 2019.
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Probing the inter-layer exciton physics in a MoS$_2$/MoSe$_2$/MoS$_2$ van der Waals heterostructure
Authors:
M. Baranowski,
A. Surrente,
L. Klopotowski,
J. M. Urban,
N. Zhang,
D. K. Maude,
K. Wiwatowski,
S. Mackowski,
Y. C. Kung,
D. Dumcenco,
A. Kis,
P. Plochocka
Abstract:
Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the formation of inter-layer excitons with long lifetimes and robust valley polarization. However, these features have been observed simultaneously only in MoSe$_2$/WSe…
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Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the formation of inter-layer excitons with long lifetimes and robust valley polarization. However, these features have been observed simultaneously only in MoSe$_2$/WSe$_2$ heterostructures. Here we report on the observation of long lived inter-layer exciton emission in a MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructure. The inter-layer nature of the observed transition is confirmed by photoluminescence spectroscopy, as well as by analyzing the temporal, excitation power and temperature dependence of the inter-layer emission peak. The observed complex photoluminescence dynamics suggests the presence of quasi-degenerate momentum-direct and momentum-indirect bandgaps. We show that circularly polarized optical pumping results in long lived valley polarization of inter-layer exciton. Intriguingly, the inter-layer exciton photoluminescence has helicity opposite to the excitation. Our results show that through a careful choice of the TMDs forming the van der Waals heterostructure it is possible to control the circular polarization of the inter-layer exciton emission.
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Submitted 13 September, 2017;
originally announced September 2017.
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Understanding and optimising the packing density of perylene bisimide layers on CVD-grown graphene
Authors:
Nina C. Berner,
Sinéad Winters,
Claudia Backes,
Chanyoung Yim,
Kim C. Dümbgen,
Izabela Kaminska,
Sebastian Mackowski,
Attilio A. Cafolla,
Andreas Hirsch,
Georg S. Duesberg
Abstract:
The non-covalent functionalisation of graphene is an attractive strategy to alter the surface chemistry of graphene without damaging its superior electrical and mechanical properties. Using the facile method of aqueous-phase functionalisation on large-scale CVD-grown graphene, we investigated the formation of different packing densities in self-assembled monolayers (SAMs) of perylene bisimide deri…
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The non-covalent functionalisation of graphene is an attractive strategy to alter the surface chemistry of graphene without damaging its superior electrical and mechanical properties. Using the facile method of aqueous-phase functionalisation on large-scale CVD-grown graphene, we investigated the formation of different packing densities in self-assembled monolayers (SAMs) of perylene bisimide derivatives and related this to the amount of substrate contamination. We were able to directly observe wet-chemically deposited SAMs in scanning tunnelling microscopy (STM) on transferred CVD graphene and revealed that the densely packed perylene ad-layers adsorb with the conjugated π-system of the core perpendicular to the graphene substrate. This elucidation of the non-covalent functionalisation of graphene has major implications on controlling its surface chemistry and opens new pathways for adaptable functionalisation in ambient conditions and on the large scale.
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Submitted 16 July, 2015;
originally announced July 2015.
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Dependence of the Energy Transfer to Graphene on the Excitation Energy
Authors:
Sebastian Mackowski,
Izabela Kamińska
Abstract:
Fluorescence studies of natural photosynthetic complexes on a graphene layer demonstrate pronounced influence of the excitation wavelength on the energy transfer efficiency to graphene. Ultraviolet light yields much faster decay of fluorescence, with average efficiencies of the energy transfer equal to 87% and 65% for excitation at 405 nm and 640 nm, respectively. This implies that focused light c…
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Fluorescence studies of natural photosynthetic complexes on a graphene layer demonstrate pronounced influence of the excitation wavelength on the energy transfer efficiency to graphene. Ultraviolet light yields much faster decay of fluorescence, with average efficiencies of the energy transfer equal to 87% and 65% for excitation at 405 nm and 640 nm, respectively. This implies that focused light changes locally the properties of graphene affecting the energy transfer dynamics, in an analogous way as in the case of metallic nanostructures. Demonstrating optical control of the energy transfer is important for exploiting unique properties of graphene in photonic and sensing architectures.
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Submitted 10 July, 2015;
originally announced July 2015.
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Optical Orientation of Excitons in CdSe Self-Assembled Quantum Dots
Authors:
S. Mackowski,
T. Gurung,
H. E. Jackson,
L. M. Smith,
J. K. Furdyna,
M. Dobrowolska
Abstract:
We study spin dynamics of excitons confined in self-assembled CdSe quantum dots by means of optical orientation in magnetic field. At zero field the exciton emission from QDs populated via LO phonon-assisted absorption shows a circular polarization of 14%. The polarization degree of the excitonic emission increases dramatically when a magnetic field is applied. Using a simple model, we extract t…
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We study spin dynamics of excitons confined in self-assembled CdSe quantum dots by means of optical orientation in magnetic field. At zero field the exciton emission from QDs populated via LO phonon-assisted absorption shows a circular polarization of 14%. The polarization degree of the excitonic emission increases dramatically when a magnetic field is applied. Using a simple model, we extract the exciton spin relaxation times of 100 ps and 2.2 ns in the absence and presence of magnetic field, respectively. With increasing temperature the polarization of the QD emission gradually decreases. Remarkably, the activation energy which describes this decay is independent of the external magnetic field, and, therefore, of the degeneracy of the exciton levels in QDs. This observation implies that the temperature-induced enhancement of the exciton spin relaxation is insensitive to the energy level degeneracy and can be attributed to the same excited state distribution.
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Submitted 1 November, 2004;
originally announced November 2004.
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Sensitivity of Exciton Spin Relaxation in Quantum Dots to Confining Potential
Authors:
S. Mackowski,
T. Gurung,
H. E. Jackson,
L. M. Smith,
W. Heiss,
J. Kossut,
G. Karczewski
Abstract:
We observe a strong dependence of the exciton spin relaxation in CdTe quantum dots on the average dot size and the depth of the confining potential. For the excitons confined to the as-grown CdTe quantum dots we find the spin relaxation time to be 4.8 ns. After rapid thermal annealing, which increases the average dot size and leads to weaker confinement, we measure the spin relaxation tine to be…
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We observe a strong dependence of the exciton spin relaxation in CdTe quantum dots on the average dot size and the depth of the confining potential. For the excitons confined to the as-grown CdTe quantum dots we find the spin relaxation time to be 4.8 ns. After rapid thermal annealing, which increases the average dot size and leads to weaker confinement, we measure the spin relaxation tine to be 1.5 ns, resulting in smaller values of the absolute polarization of the quantum dot emission. This dramatic enhancement of the spin scattering efficiency upon annealing is attributed to increased mixing between different spin states in larger CdTe quantum dots.
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Submitted 20 September, 2004;
originally announced September 2004.
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Optical Studies of Zero-Field Magnetization of CdMnTe Quantum Dots: Influence of Average Size and Composition of Quantum Dots
Authors:
T. Gurung,
S. Mackowski,
H. E. Jackson,
L. M. Smith,
W. Heiss,
J. Kossut,
G. Karczewski
Abstract:
We show that through the resonant optical excitation of spin-polarized excitons into CdMnTe magnetic quantum dots, we can induce a macroscopic magnetization of the Mn impurities. We observe very broad (4 meV linewidth) emission lines of single dots, which are consistent with the formation of strongly confined exciton magnetic polarons. Therefore we attribute the optically induced magnetization o…
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We show that through the resonant optical excitation of spin-polarized excitons into CdMnTe magnetic quantum dots, we can induce a macroscopic magnetization of the Mn impurities. We observe very broad (4 meV linewidth) emission lines of single dots, which are consistent with the formation of strongly confined exciton magnetic polarons. Therefore we attribute the optically induced magnetization of the magnetic dots results to the formation of spin-polarized exciton magnetic polarons. We find that the photo-induced magnetization of magnetic polarons is weaker for larger dots which emit at lower energies within the QD distribution. We also show that the photo-induced magnetization is stronger for quantum dots with lower Mn concentration, which we ascribe to weaker Mn-Mn interaction between the nearest neighbors within the dots. Due to particular stability of the exciton magnetic polarons in QDs, where the localization of the electrons and holes is comparable to the magnetic exchange interaction, this optically induced spin alignment persists to temperatures as high as 160 K.
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Submitted 30 August, 2004;
originally announced August 2004.
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Sub-Wavelength Multi-Channel Imaging Using a Solid Immersion Lens: Spectroscopy of Excitons in Single Quantum Dots
Authors:
K. P. Hewaparakrama,
S. Mackowski,
H. E. Jackson,
L. M. Smith,
G. Karczewski,
J. Kossut
Abstract:
We demonstrate sub-wavelength imaging of excitons confined to single CdTe quantum dots. By combining slit-confocal microscopy with a hemispherical solid immersion lens we simultaneously map the emission of thousands of single quantum dots with a spatial resolution of 400 nm. By analyzing the linear polarization of the quantum dot emissions at B=0T, we find that the distribution of the exchange s…
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We demonstrate sub-wavelength imaging of excitons confined to single CdTe quantum dots. By combining slit-confocal microscopy with a hemispherical solid immersion lens we simultaneously map the emission of thousands of single quantum dots with a spatial resolution of 400 nm. By analyzing the linear polarization of the quantum dot emissions at B=0T, we find that the distribution of the exchange splitting is centered at zero with a standard deviation of 0.34 meV. Similar experiments performed at B=3T give an average value of the exciton effective g factor of 3.1. This experimental approach provides an effective means to gain statistical information about the quantum dot exciton fine structure in the ensemble.
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Submitted 25 August, 2004;
originally announced August 2004.
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Optically Induced Magnetization of CdMnTe Self-Assembled Quantum Dots
Authors:
S. Mackowski,
T. Gurung,
T. A. Nguyen,
H. E. Jackson,
L. M. Smith,
G. Karczewski,
J. Kossut
Abstract:
We demonstrate that resonant excitation of CdMnTe self-assembled quantum dots creates an ensemble of spin-polarized magnetic polarons at B=0 T. The strong spatial confinement characteristic of quantum dots significantly increases the stability of magnetic polarons so that the optically induced spin alignment is observed for temperatures > 120 K.
We demonstrate that resonant excitation of CdMnTe self-assembled quantum dots creates an ensemble of spin-polarized magnetic polarons at B=0 T. The strong spatial confinement characteristic of quantum dots significantly increases the stability of magnetic polarons so that the optically induced spin alignment is observed for temperatures > 120 K.
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Submitted 11 March, 2004;
originally announced March 2004.
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Resonant photoluminescence and excitation spectroscopy of CdSe/ZnSe and CdTe/ZnTe self-assembled quantum dots
Authors:
T. A. Nguyen,
S. Mackowski,
H. Rho,
H. E. Jackson,
L. M. Smith,
J. Wrobel,
K. Fronc,
J. Kossut,
G. Karczewski,
M. Dobrowolska,
J. Furdyna
Abstract:
We show that two major carrier excitation mechanisms are present in II-VI self-assembled quantum dots. The first one is related to direct excited state - ground state transition. It manifests itself by the presence of sharp and intense lines in the excitation spectrum measured from single quantum dots. Apart from these lines, we also observe up to four much broader excitation lines. The energy s…
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We show that two major carrier excitation mechanisms are present in II-VI self-assembled quantum dots. The first one is related to direct excited state - ground state transition. It manifests itself by the presence of sharp and intense lines in the excitation spectrum measured from single quantum dots. Apart from these lines, we also observe up to four much broader excitation lines. The energy spacing between these lines indicates that they are associated with absorption related to longitudinal optical phonons. By analyzing resonantly excited photoluminescence spectra, we are able to separate the contributions from these two mechanisms. In the case of CdTe dots, the excited state - ground state relaxation is important for all dots in ensemble, while phonon - assisted processes are dominant for the dots with smaller lateral size.
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Submitted 23 October, 2003;
originally announced October 2003.
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Resonant and non-resonant PL and PLE spectra of CdSe/ZnSe and CdTe/ZnTe self-assembled quantum dots
Authors:
T. A. Nguyen,
S. Mackowski,
L. M. Robinson,
H. Rho,
H. E. Jackson,
L. M. Smith,
M. Dobrowolska,
J. K. Furdyna,
G. Karczewski
Abstract:
Using micro- and nano-scale resonantly excited PL and PLE, we study the excitonic structure of CdSe/ZnSe and CdTe/ZnTe self assembled quantum dots (SAQD). Strong resonantly enhanced PL is seen at one to four optic phonon energies below the laser excitation energy. The maximum enhancement is not just one phonon energy above the peak energy distribution of QDs, but rather is 50 meV (for CdSe dots)…
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Using micro- and nano-scale resonantly excited PL and PLE, we study the excitonic structure of CdSe/ZnSe and CdTe/ZnTe self assembled quantum dots (SAQD). Strong resonantly enhanced PL is seen at one to four optic phonon energies below the laser excitation energy. The maximum enhancement is not just one phonon energy above the peak energy distribution of QDs, but rather is 50 meV (for CdSe dots) or 100 meV (for CdTe) above the peak distribution. We interpret this unusual result as from double resonances associated with excited state to ground state energies being commensurate with LO phonons. Such a situation appears to occur only for the high-energy quantum dots.
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Submitted 17 September, 2003;
originally announced September 2003.
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Resonant Spectroscopy of II-VI Self-Assembled Quantum Dots: Excited States and Exciton-LO Phonon Coupling
Authors:
T. A. Nguyen,
S. Mackowski,
H. E. Jackson,
L. M. Smith,
J. Wrobel,
K. Fronc,
G. Karczewski,
J. Kossut,
M. Dobrowolska J. K. Furdyna,
W. Heiss
Abstract:
Using resonantly excited photoluminescence along with photoluminescence excitation spectroscopies, we study the carrier excitation processes in CdTe/ZnTe and CdSe/ZnSe self-assembled quantum dots. Photoluminescence excitation spectra of single CdTe quantum dots reflect two major mechanisms for carrier excitation: The first, associated with the presence of sharp and intense lines in the spectrum,…
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Using resonantly excited photoluminescence along with photoluminescence excitation spectroscopies, we study the carrier excitation processes in CdTe/ZnTe and CdSe/ZnSe self-assembled quantum dots. Photoluminescence excitation spectra of single CdTe quantum dots reflect two major mechanisms for carrier excitation: The first, associated with the presence of sharp and intense lines in the spectrum, is a direct excited state ? ground state transition. The second, associated with the appearance of up to four much broader excitation lines, is a LO phonon-assisted absorption directly into the quantum dot ground states. LO phonons with energies of both quantum dots and ZnTe barrier material are identified in the photoluminescence excitation spectra. Resonantly excited PL measurements for the dot ensemble as a function of excitation energy makes it possible to separate the contributions of these two mechanisms. We find that for CdTe quantum dots the distribution of excited states coupled to the ground states reflects the energy distribution of the quantum dot emission, but shifted up in energy by 100 meV. This large splitting between excited and ground states in CdTe quantum dots suggests strong spatial confinement. In contrast, the LO phonon-assisted absorption shows significant size selectivity. In the case of CdTe dots the exciton-LO phonon coupling is strongly enhanced for smaller-sized dots which have higher emission energies. In contrast, for CdSe quantum dots the exciton-LO phonon coupling is uniform over the ensemble ? that is, the energy distribution determines the intensities of LO phonon replicas. We show that for CdTe quantum dots after annealing, that is after an increase in the average dot size, the exciton-LO phonon interaction reflects the dot energy distribution, as observed for CdSe quantum dots.
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Submitted 17 September, 2003;
originally announced September 2003.
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Exciton Spin Relaxation Time in Quantum Dots Measured by Continuous-Wave Photoluminescence Spectroscopy
Authors:
S. Mackowski,
T. A. Nguyen,
H. E. Jackson,
L. M. Smith,
J. Kossut,
G. Karczewski
Abstract:
We demonstrate a new method of measuring the exciton spin relaxation time in semiconductor nanostructures by continuous-wave photoluminescence. We find that for self-assembled CdTe quantum dots the degree of circular polarization of emission is larger when exciting polarized excitons into the lower energy spin state than in the case when the excitons are excited into the higher energy spin state…
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We demonstrate a new method of measuring the exciton spin relaxation time in semiconductor nanostructures by continuous-wave photoluminescence. We find that for self-assembled CdTe quantum dots the degree of circular polarization of emission is larger when exciting polarized excitons into the lower energy spin state than in the case when the excitons are excited into the higher energy spin state. A simple rate equation model gives the exciton spin relaxation time in CdTe quantum dots equal to 4.8+/-0.3 ns, significantly longer than the quantum dot exciton recombination time 300 ps.
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Submitted 6 August, 2003;
originally announced August 2003.
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Tuning the properties of magnetic CdMnTe quantum dots
Authors:
S. Mackowski,
H. E. Jackson,
L. M. Smith,
J. Kossut,
G. Karczewski,
W. Heiss
Abstract:
We show that CdMnTe self-assembled quantum dots can be formed by depositing a submonolayer of Mn ions over a ZnTe surface prior to deposition of the CdTe dot layer. Single dot emission lines and strongly polarized quantum dot photoluminescence in an applied magnetic field confirm the presence of Mn in individual quantum dots. The width of PL lines of the single CdMnTe dots is 3 meV due to magnet…
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We show that CdMnTe self-assembled quantum dots can be formed by depositing a submonolayer of Mn ions over a ZnTe surface prior to deposition of the CdTe dot layer. Single dot emission lines and strongly polarized quantum dot photoluminescence in an applied magnetic field confirm the presence of Mn in individual quantum dots. The width of PL lines of the single CdMnTe dots is 3 meV due to magnetic moment fluctuations of the Mn ions. After rapid thermal annealing, the emission lines of individual magnetic quantum dots narrow significantly to 0.25 meV showing that effect of magnetic fluctuations is strongly reduced most probably due to an increase in the average quantum dot size. These results suggest a way to tune the spin properties of magnetic quantum dots.
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Submitted 6 August, 2003;
originally announced August 2003.
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Exciton spin relaxation in resonantly excited CdTe/ZnTe self-assembled quantum dots
Authors:
S. Mackowski,
T. A. Nguyen,
T. Gurung,
K. Hewaparkarama,
H. E. Jackson,
L. M. Smith,
J. Wrobel,
K. Fronc,
J. Kossut,
G. Karczewski
Abstract:
We study the exciton spin relaxation in CdTe self-assembled quantum dots by using polarized photoluminescence spectroscopy in magnetic field. The experiments on single CdTe quantum dots and on large quantum dot ensembles show that by combining phonon-assisted absorption with circularly polarized resonant excitation the spin-polarized excitons are photo-excited directly into the ground states of…
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We study the exciton spin relaxation in CdTe self-assembled quantum dots by using polarized photoluminescence spectroscopy in magnetic field. The experiments on single CdTe quantum dots and on large quantum dot ensembles show that by combining phonon-assisted absorption with circularly polarized resonant excitation the spin-polarized excitons are photo-excited directly into the ground states of quantum dots. We find that for single symmetric quantum dots at B=0 T, where the exciton levels are degenerate, the spins randomize very rapidly, so that no net spin polarization is observed. In contrast, when this degeneracy is lifted by applying external magnetic field, optically created spin-polarized excitons maintain their polarization on a time scale much longer than the exciton recombination time. We also observe that the exciton spin polarization is conserved when the splitting between exciton states is caused by quantum dot shape asymmetry. Similar behavior is found in a large ensemble of CdTe quantum dots. These results show that while exciton spins scatter rapidly between degenerate states, the spin relaxation time increases by orders of magnitude as the exciton spin states in a quantum dot become non-degenerate. Finally, due to strong electronic confinement in CdTe quantum dots, the large spin polarization of excitons shows no dependence on the number of phonons emitted between the virtual state and the exciton ground state during the excitation.
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Submitted 28 July, 2003;
originally announced July 2003.