Showing 1–50 of 82 results for author: Machida, T

Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions

Authors: Sabin Park, Rai Moriya, Yijin Zhang, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida

Abstract: Graphene is known to exhibit a pronounced photo-thermoelectric effect (PTE) in its in-plane carrier transport and attracting attention toward various optoelectronic applications. In this study, we demonstrate an out-of-plane PTE by utilizing electron tunneling across a barrier, namely, the tunneling photo-thermoelectric effect (TPTE). This was achieved in a monolayer graphene (MLG)/bilayer hexagon… ▽ More Graphene is known to exhibit a pronounced photo-thermoelectric effect (PTE) in its in-plane carrier transport and attracting attention toward various optoelectronic applications. In this study, we demonstrate an out-of-plane PTE by utilizing electron tunneling across a barrier, namely, the tunneling photo-thermoelectric effect (TPTE). This was achieved in a monolayer graphene (MLG)/bilayer hexagonal boron nitride (h-BN)/bilayer graphene (BLG) asymmetric tunnel junction. MLG and BLG exhibit different cyclotron resonance (CR) optical absorption energies when their energies are Landau quantized under an out-of-plane magnetic field. We tuned the magnetic field under mid-infrared (MIR) irradiation to bring MLG into CR conditions, whereas BLG was not in CR. The CR absorption in the MLG generates an electron temperature difference between the MLG and BLG, and induces an out-of-plane TPTE voltage across the h-BN tunnel barrier. The TPTE exhibited a unique dependence on the Fermi energy of the MLG, which differed from that of the in-plane PTE of the MLG. The TPTE signal was large when the Fermi energy of the MLG was tuned near the phase transition between the quantum Hall state (QHS) and non-QHS, that is, the transition between carrier localization and delocalization. The TPTE provides another degree of freedom for probing the electronic and optoelectronic properties of two-dimensional material heterostructures. △ Less

Submitted 22 August, 2024; originally announced August 2024.

Comments: 18 pages, 4 figures

Twisted Bogoliubov quasiparticles in the superconducting NbSe$_2$ monolayer on graphene

Authors: Masahiro Naritsuka, Tadashi Machida, Shun Asano, Youichi Yanase, Tetsuo Hanaguri

Abstract: The superconducting properties of layered materials can be controlled by thinning, stacking, and twisting, demanding investigation of electronic states by spectroscopic means at the nanometer scale. Here, we reveal the spatial variations of the electronic states in heterostructures of the superconducting monolayer NbSe$_2$/graphene using spectroscopic-imaging scanning tunneling microscopy. The NbS… ▽ More The superconducting properties of layered materials can be controlled by thinning, stacking, and twisting, demanding investigation of electronic states by spectroscopic means at the nanometer scale. Here, we reveal the spatial variations of the electronic states in heterostructures of the superconducting monolayer NbSe$_2$/graphene using spectroscopic-imaging scanning tunneling microscopy. The NbSe$_2$ monolayer grown by molecular beam epitaxy is naturally twisted with respect to the graphene substrate and exhibits interference patterns of Bogoliubov quasiparticles twisted with respect to the NbSe$_2$ and graphene lattices. We find that the twisted interference patterns originate from a sextet of regions in momentum space where the Fermi surfaces of NbSe$_2$ and graphene overlap. The Fermi surface overlap is sensitive to the twist angle, providing a knob to tune superconductivity. △ Less

Submitted 23 May, 2024; originally announced May 2024.

Comments: 20 pages + 8 pages supplementary, 5 figures in main text + 6 supplementary figures

Journal ref: Nature Physics (2025)

180$^\circ$-twisted bilayer ReSe$_2$ as an artificial noncentrosymmetric semiconductor

Authors: S. Akatsuka, M. Sakano, T. Yamamoto, T. Nomoto, R. Arita, R. Murata, T. Sasagawa, K. Watanabe, T. Taniguchi, M. Kitamura, K. Horiba, K. Sugawara, S. Souma, T. Sato, H. Kumigashira, K. Shinokita, H. Wang, K. Matsuda, S. Masubuchi, T. Machida, K. Ishizaka

Abstract: We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the fi… ▽ More We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the finite lifting of spin degeneracy (~50 meV) distinct from natural monolayer and bilayer ReSe$_2$. Our results demonstrate that the spin-momentum locked state, which leads to spintronic functions and Berry-curvature-related phenomena, can be realized even with the stacking of centrosymmetric monolayers. △ Less

Submitted 27 September, 2023; originally announced September 2023.

Comments: 15 pages, 4 figures

Searching for Majorana quasiparticles at vortex cores in iron-based superconductors

Authors: Tadashi Machida, Tetsuo Hanaguri

Abstract: The unambiguous detection of the Majorana zero mode (MZM), which is essential for future topological quantum computing, has been a challenge in recent condensed matter experiments. The MZM is expected to emerge at the vortex core of topological superconductors as a zero-energy vortex bound state (ZVBS), amenable to detection using scanning tunneling microscopy/spectroscopy (STM/STS). However, the… ▽ More The unambiguous detection of the Majorana zero mode (MZM), which is essential for future topological quantum computing, has been a challenge in recent condensed matter experiments. The MZM is expected to emerge at the vortex core of topological superconductors as a zero-energy vortex bound state (ZVBS), amenable to detection using scanning tunneling microscopy/spectroscopy (STM/STS). However, the typical energy resolution of STM/STS has made it challenging to distinguish the MZM from the low-lying trivial vortex bound states. Here, we review the recent high-energy-resolution STM/STS experiments on the vortex cores of Fe(Se,Te), where the MZM is expected to emerge, and the energy of the lowest trivial bound states is reasonably high. Tunneling spectra taken at the vortex cores exhibit a ZVBS well below any possible trivial state, suggesting its MZM origin. However, it should be noted that ZVBS is a necessary but not sufficient condition for the MZM; a qualitative feature unique to the MZM needs to be explored. We discuss the current status and issues in the pursuit of such Majorananess, namely the level sequence of the vortex bound states and the conductance plateau of the ZVBS. We also argue for future experiments to confirm the Majorananess, such as the detection of the doubling of the shot noise intensity and spin polarization of the MZM. △ Less

Submitted 2 August, 2023; originally announced August 2023.

Comments: 22 pages, 7 figures

Imaging Josephson Vortices on Curved Junctions

Authors: Yuita Fujisawa, Anjana Krishnadas, Barnaby R. M. Smith, Markel Pardo-Almanza, Hoshu Hiyane, Yuki Nagai, Tadashi Machida, Yoshinori Okada

Abstract: Understanding the nature of vortices in type-II superconductors is crucial for comprehending exotic superconductors and advancing the application of superconducting materials in future electronic devices. This study uses spectroscopic scanning tunneling microscopy to visualize Josephson vortices along crystalline domain boundaries in the superconducting spinel oxide LiTi2O4 (LTO). Our experimental… ▽ More Understanding the nature of vortices in type-II superconductors is crucial for comprehending exotic superconductors and advancing the application of superconducting materials in future electronic devices. This study uses spectroscopic scanning tunneling microscopy to visualize Josephson vortices along crystalline domain boundaries in the superconducting spinel oxide LiTi2O4 (LTO). Our experimental results reveal that the local curvature of the Josephson junction dictates the positioning of Josephson vortices. Self-consistent solutions of the Bogoliubov-de Gennes and gap equations theoretically corroborate this observation. In addition to enhancing our understanding of the physics of Josephson vortex formation, this study offers potential guidelines for developing vortex-based superconducting devices. △ Less

Submitted 15 November, 2024; v1 submitted 21 July, 2023; originally announced July 2023.

Comments: This manuscript is accepted by Physical Review B

Visualizing magnetic field-induced rotational electronic symmetry breaking in a spinel oxide superconductor

Authors: Yuita Fujisawa, Anjana Krishnadas, Chia-Hsiu Hsu, Barnaby R. M. Smith, Markel Pardo-Almanza, Yukiko Obata, Dyon van Dinter, Guoqing Chang, Yuki Nagai, Tadashi Machida, Yoshinori Okada

Abstract: The spinel oxide superconductor LiTi2O4 (LTO) is an intriguing material platform where the electronic structure near the Fermi energy (EF) is derived from 3d elections on the geometrically frustrated Ti pyrochlore network. A recent angle-resolved photoemission spectroscopy (ARPES) study has revealed the existence of an exotic quasiparticle state arising from the competition between instability tow… ▽ More The spinel oxide superconductor LiTi2O4 (LTO) is an intriguing material platform where the electronic structure near the Fermi energy (EF) is derived from 3d elections on the geometrically frustrated Ti pyrochlore network. A recent angle-resolved photoemission spectroscopy (ARPES) study has revealed the existence of an exotic quasiparticle state arising from the competition between instability towards orbital ordering and geometrical frustration below 150 K. An intriguing remaining challenge is the imaging of Abrikosov vortices, which generally inherits the symmetry of the Fermi surface at k_z=0. Here, we observe surprising triangular-shaped Abrikosov vortices on an LTO(111) film, deviating from the conventional expectations of the six-fold symmetric Fermi surface at k_z=0. In combination with the experimentally observed isotropic pairing, we propose magnetic field-driven rotational electronic symmetry breaking of the underlying Fermi surface. Consequently, we observe Josephson vortices along the crystalline domain boundary, across which quasiparticle hopping is suppressed due to the symmetry-broken Fermi surface in each domain. Our discoveries point to the existence of unique physics of magnetic field-induced electronic rotational symmetry breaking in the spinel oxide superconductor LTO. This picture is in stark contrast to the other exotic superconductors with partial gap opening or long-range ordering with broken symmetry above the superconducting critical temperature at zero magnetic field. △ Less

Submitted 11 June, 2023; originally announced June 2023.

Ultrafast Control of Crystal Structure in a Topological Charge-Density-Wave Material

Authors: Takeshi Suzuki, Yuya Kubota, Natsuki Mitsuishi, Shunsuke Akatsuka, Jumpei Koga, Masato Sakano, Satoru Masubuchi, Yoshikazu Tanaka, Tadashi Togashi, Hiroyuki Ohsumi, Kenji Tamasaku, Makina Yabashi, Hidefumi Takahashi, Shintaro Ishiwata, Tomoki Machida, Iwao Matsuda, Kyoko Ishizaka, Kozo Okazaki

Abstract: Optical control of crystal structures is a promising route to change physical properties including topological nature of a targeting material. Time-resolved X-ray diffraction measurements using the X-ray free-electron laser are performed to study the ultrafast lattice dynamics of VTe$_2$, which shows a unique charge-density-wave (CDW) ordering coupled to the topological surface states as a first-o… ▽ More Optical control of crystal structures is a promising route to change physical properties including topological nature of a targeting material. Time-resolved X-ray diffraction measurements using the X-ray free-electron laser are performed to study the ultrafast lattice dynamics of VTe$_2$, which shows a unique charge-density-wave (CDW) ordering coupled to the topological surface states as a first-order phase transition. A significant oscillation of the CDW amplitude mode is observed at a superlattice reflection as well as Bragg reflections. The frequency of the oscillation is independent of the fluence of the pumping laser, which is prominent to the CDW ordering of the first-order phase transition. Furthermore, the timescale of the photoinduced 1$T^{\prime\prime}$ to 1$T$ phase transition is independent of the period of the CDW amplitude mode. △ Less

Submitted 26 May, 2023; originally announced May 2023.

Journal ref: Phys. Rev. B 108, 184305 (2023)

Zeeman effects on Yu-Shiba-Rusinov states

Authors: T. Machida, Y. Nagai, T. Hanaguri

Abstract: When the exchange interaction between the impurity spin and the spins of itinerant quasiparticles are strong or weak enough, the ground states for a magnetic impurity in a superconductor are the screened or free spins, respectively. In both cases, the lowest excited state is a bound state within the superconducting gap, known as the Yu-Shiba-Rusinov (YSR) state. The YSR state is spatially localize… ▽ More When the exchange interaction between the impurity spin and the spins of itinerant quasiparticles are strong or weak enough, the ground states for a magnetic impurity in a superconductor are the screened or free spins, respectively. In both cases, the lowest excited state is a bound state within the superconducting gap, known as the Yu-Shiba-Rusinov (YSR) state. The YSR state is spatially localized, energetically isolated, and fully spin-polarized, leading to applications such as functional scanning probes. While any application demands identifying whether the impurity spin is screened or free, a suitable experimental technique has been elusive. Here we demonstrate an unambiguous way to determine the impurity ground state using the Zeeman effect. We performed ultra-low temperature scanning tunneling spectroscopy of junctions formed between a Cu(111) surface and superconducting Nb tips decorated by single magnetic Fe atoms. Depending on the condition of the Fe adsorbate, the YSR peak in the spectrum either splits or shifts in a magnetic field, signifying that the Fe spin is screened or free, respectively. Our observations provide renewed insights into the competition between magnetism and superconductivity and constitute a basis for the applications of the YSR state. △ Less

Submitted 17 August, 2022; originally announced August 2022.

Comments: 21 pages, 10 figures

Journal ref: Phys. Rev. Research 4, 033182 (2022)

Observation of phonon Poiseuille flow in isotopically-purified graphite ribbons

Authors: Xin Huang, Yangyu Guo, Yunhui Wu, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Zhongwei Zhang, Sebastian Volz, Tomoki Machida, Masahiro Nomura

Abstract: In recent times, the unique collective transport physics of phonon hydrodynamics motivates theoreticians and experimentalists to explore it in micro- and nanoscale and at elevated temperatures. Graphitic materials have been predicted to facilitate hydrodynamic heat transport with their intrinsically strong normal scattering. However, owing to the experimental difficulties and vague theoretical und… ▽ More In recent times, the unique collective transport physics of phonon hydrodynamics motivates theoreticians and experimentalists to explore it in micro- and nanoscale and at elevated temperatures. Graphitic materials have been predicted to facilitate hydrodynamic heat transport with their intrinsically strong normal scattering. However, owing to the experimental difficulties and vague theoretical understanding, the observation of phonon Poiseuille flow in graphitic systems remains challenging. In this study, based on a microscale experimental platform and the pertinent occurrence criterion in anisotropic solids, we demonstrate the phonon Poiseuille flow in a 5 μm-wide suspended graphite ribbon with purified 13C isotope concentration. Our observation is well supported by our theoretical model based on a kinetic theory with fully first-principles inputs. Thus, this study paves the way for deeper insight into phonon hydrodynamics and cutting-edge heat manipulating applications. △ Less

Submitted 4 July, 2022; originally announced July 2022.

Superconductivity near the saddle point in the two-dimensional Rashba system Si(111)-$\sqrt{3}\times\sqrt{3}$-(Tl,Pb)

Authors: T. Machida, Y. Yoshimura, T. Nakamura, Y. Kohsaka, T. Hanaguri, C. -R. Hsing, C. -M. Wei, Y. Hasegawa, S. Hasegawa, A. Takayama

Abstract: Two-dimensional Rashba superconductor Si(111)-$\sqrt{3}\times\sqrt{3}$-(Tl,Pb) is a candidate platform of mixed spin-singlet and -triplet superconductivity. A recent scanning tunneling microscope (STM) experiment revealed a pseudogap at the vortex core, suggesting the finite triplet component [T. Nakamura $\textit{et al.}$, Phys. Rev. B $\bf{ 98}$, 134505 (2018)]. Detailed spectroscopic informatio… ▽ More Two-dimensional Rashba superconductor Si(111)-$\sqrt{3}\times\sqrt{3}$-(Tl,Pb) is a candidate platform of mixed spin-singlet and -triplet superconductivity. A recent scanning tunneling microscope (STM) experiment revealed a pseudogap at the vortex core, suggesting the finite triplet component [T. Nakamura $\textit{et al.}$, Phys. Rev. B $\bf{ 98}$, 134505 (2018)]. Detailed spectroscopic information of the superconducting gap and the low-energy band structure is necessary to establish the putative triplet superconductivity. Here, we performed high-energy-resolution spectroscopic imaging experiments on Si(111)-$\sqrt{3}\times\sqrt{3}$-(Tl,Pb) using an ultra-low temperature STM. We found that various spectroscopic features, including the vortex-core spectrum, are consistent with spin-singlet $s$-wave superconductivity, having no sign of the triplet component. The apparent contradiction with the previous STM result suggests that the nature of superconductivity changes within the same system. From the analysis of the quasiparticle interference patterns, we found that the Fermi energy is in the close vicinity of the saddle point near the $\overline{\rm{M}}$ point. We speculate that the nature of superconductivity varies depending on the saddle-point energy with respect to the Fermi energy, which is sample-dependent due to different band filling. △ Less

Submitted 29 January, 2022; originally announced January 2022.

Comments: 23 pages, 7 figures

Quasiparticle Nodal Plane in the Fulde-Ferrell-Larkin-Ovchinnikov State of FeSe

Authors: S. Kasahara, H. Suzuki, T. Machida, Y. Sato, Y. Ukai, H. Murayama, S. Suetsugu, Y. Kasahara, T. Shibauchi, T. Hanaguri, Y. Matsuda

Abstract: The Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, characterized by Cooper pairs condensed at finite momentum, has been a long-sought state that remains unresolved in many classes of fermionic systems, including superconductors and ultracold atoms. A fascinating aspect of the FFLO state is the emergence of periodic nodal planes in real space, but its observation is still lacking. Here we investiga… ▽ More The Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, characterized by Cooper pairs condensed at finite momentum, has been a long-sought state that remains unresolved in many classes of fermionic systems, including superconductors and ultracold atoms. A fascinating aspect of the FFLO state is the emergence of periodic nodal planes in real space, but its observation is still lacking. Here we investigate the superconducting order parameter at high magnetic fields $H$ applied perpendicular to the $ab$ plane in a high-purity single crystal of FeSe. The heat capacity and magnetic torque provide thermodynamic evidence for a distinct superconducting phase at the low-temperature/high-field corner of the phase diagram. Despite the bulk superconductivity, spectroscopic-imaging scanning tunneling microscopy performed on the same crystal demonstrates that the order parameter vanishes at the surface upon entering the high-field phase. These results provide the first demonstration of a pinned planar node perpendicular to $H$, which is consistent with a putative FFLO state. △ Less

Submitted 17 November, 2021; originally announced November 2021.

Comments: 11 pages, 9 figures, including Supplemental Material. Accepted for publication in Phys. Rev. Lett

Direct observation of the layer-number-dependent electronic structure in few-layer WTe2

Authors: M. Sakano, Y. Tanaka, S. Masubuchi, S. Okazaki, T. Nomoto, A. Oshima, K. Watanabe, T. Taniguchi, R. Arita, T. Sasagawa, T. Machida, K. Ishizaka

Abstract: When a crystal becomes thinner and thinner to the atomic level, peculiar phenomena discretely depending on its layer-numbers (n) start to appear. The symmetry and wave functions strongly reflect the layer-numbers and stacking order, which brings us a potential of realizing new properties and functions that are unexpected in either bulk or simple monolayer. Multilayer WTe2 is one such example exhib… ▽ More When a crystal becomes thinner and thinner to the atomic level, peculiar phenomena discretely depending on its layer-numbers (n) start to appear. The symmetry and wave functions strongly reflect the layer-numbers and stacking order, which brings us a potential of realizing new properties and functions that are unexpected in either bulk or simple monolayer. Multilayer WTe2 is one such example exhibiting unique ferroelectricity and non-linear transport properties related to the antiphase stacking and Berry-curvature dipole. Here we investigate the electronic band dispersions of multilayer WTe2 (2-5 layers), by performing laser-based micro-focused angle-resolved photoelectron spectroscopy on exfoliated-flakes that are strictly sorted by n and encapsulated by graphene. We clearly observed the insulator-semimetal transition occurring between 2- and 3-layers, as well as the 30-70 meV spin-splitting of valence bands manifesting in even n as a signature of stronger structural asymmetry. Our result fully demonstrates the possibility of the large energy-scale band and spin manipulation through the finite n stacking procedure. △ Less

Submitted 22 March, 2021; originally announced March 2021.

Comments: 19 pages, 4 figures. M. Sakano, Y. Tanaka, and S. Masubuchi equally contributed to this work

Selective Etching of Hexagonal Boron Nitride by High-Pressure CF4 Plasma for Individual One-dimensional Ohmic Contacts to Graphene Layers

Authors: Yuta Seo, Satoru Masubuchi, Eisuke Watanabe, Momoko Onodera, Rai Moriya, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida

Abstract: We describe a technique for making one-dimensional ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved by increasing the plasma pressure, which enables etching of h-BN, while graphene acts as an etch stop to protect underlying h-BN. A low-pressure O2 plasma aniso… ▽ More We describe a technique for making one-dimensional ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved by increasing the plasma pressure, which enables etching of h-BN, while graphene acts as an etch stop to protect underlying h-BN. A low-pressure O2 plasma anisotropically etches graphene in the vertical direction, which exposes graphene edges at h-BN sidewalls. Despite the O2 plasma bombardment, the lower h-BN layer functions as an insulating layer. Thus, this method allows us to pattern metal electrodes on h-BN over a second graphene layer. Subsequent electron-beam lithography and evaporation fabricate metal contacts at the graphene edges that are active down to cryogenic temperatures. This fabrication method is demonstrated by the preparation of a graphene Hall bar with a graphite back-gate and double bilayer-graphene Hall bar devices. The high flexibility of the device geometries enabled by this method creates access to a variety of experiments on electrostatically coupled graphene layers. △ Less

Submitted 4 December, 2020; originally announced December 2020.

Comments: 4 figures, accepted for publication in Applied Physics Letters

Dark-state impact on the exciton recombination of WS2 monolayers as revealed by multi-time-scale pump-and-probe spectroscopy

Authors: Takashi Kuroda, Yusuke Hoshi, Satoru Masubuchi, Mitsuhiro Okada, Ryo Kitaura, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida

Abstract: The luminescence yield of transition metal dichalcogenide monolayers frequently suffers from the formation of long-lived dark states, which include excitons with intervalley charge carriers, spin-forbidden transitions, and a large center-of-mass momentum located outside the light cone of dispersion relations. Efficient relaxation from bright exciton states to dark states suppresses the quantum yie… ▽ More The luminescence yield of transition metal dichalcogenide monolayers frequently suffers from the formation of long-lived dark states, which include excitons with intervalley charge carriers, spin-forbidden transitions, and a large center-of-mass momentum located outside the light cone of dispersion relations. Efficient relaxation from bright exciton states to dark states suppresses the quantum yield of photon emission. In addition, the radiative recombination of excitons is heavily influenced by Auger-type exciton-exciton scattering, which yields another nonradiative relaxation channel at room temperature. Here, we show that Auger-type scattering is promoted not only between (bright) excitons but also between excitons and long-lived dark states. We studied the luminescence dynamics of monolayer WS2 capped with hexagonal BN over broad time ranges of picoseconds to milliseconds using carefully designed pump-and-probe techniques. We observed that luminescence quenching associated with Auger-type scattering occurs on 1-100 microsecond time scales, which thus correspond to the lifetimes of the relevant dark states. The broad distribution of the measured lifetimes implies the impact of various types of long-lived states on the exciton annihilation process. △ Less

Submitted 20 October, 2020; originally announced October 2020.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 102, 195407 (2020); open access

Deep-Learning-Based Image Segmentation Integrated with Optical Microscopy for Automatically Searching for Two-Dimensional Materials

Authors: Satoru Masubuchi, Eisuke Watanabe, Yuta Seo, Shota Okazaki, Takao Sasagawa, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida

Abstract: Deep-learning algorithms enable precise image recognition based on high-dimensional hierarchical image features. Here, we report the development and implementation of a deep-learning-based image segmentation algorithm in an autonomous robotic system to search for two-dimensional (2D) materials. We trained the neural network based on Mask-RCNN on annotated optical microscope images of 2D materials… ▽ More Deep-learning algorithms enable precise image recognition based on high-dimensional hierarchical image features. Here, we report the development and implementation of a deep-learning-based image segmentation algorithm in an autonomous robotic system to search for two-dimensional (2D) materials. We trained the neural network based on Mask-RCNN on annotated optical microscope images of 2D materials (graphene, hBN, MoS2, and WTe2). The inference algorithm is run on a 1024 x 1024 px2 optical microscope images for 200 ms, enabling the real-time detection of 2D materials. The detection process is robust against changes in the microscopy conditions, such as illumination and color balance, which obviates the parameter-tuning process required for conventional rule-based detection algorithms. Integrating the algorithm with a motorized optical microscope enables the automated searching and cataloging of 2D materials. This development will allow researchers to utilize unlimited amounts of 2D materials simply by exfoliating and running the automated searching process. △ Less

Submitted 28 October, 2019; originally announced October 2019.

Journal ref: npj 2D Mater Appl 4, 3 (2020)

Detection of cyclotron resonance using photo-induced thermionic emission at graphene/MoS2 van der Waals interface

Authors: Yusai Wakafuji, Rai Moriya, Sabin Park, Kei Kinoshita, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida

Abstract: We demonstrate the detection of cyclotron resonance in graphene by using a photo-induced thermionic emission mechanism at the graphene/MoS2 van der Waals (vdW) Schottky junction. At cyclotron resonance in Landau-quantized graphene, the infrared light is absorbed and an electron-hole pair is generated. When the energy of a photoexcited electron exceeds the band offset energy at the graphene/MoS2 in… ▽ More We demonstrate the detection of cyclotron resonance in graphene by using a photo-induced thermionic emission mechanism at the graphene/MoS2 van der Waals (vdW) Schottky junction. At cyclotron resonance in Landau-quantized graphene, the infrared light is absorbed and an electron-hole pair is generated. When the energy of a photoexcited electron exceeds the band offset energy at the graphene/MoS2 interface, the electron transfer occurs from graphene to the conduction band of MoS2, and the hole remains in graphene. This creates an electron-hole separation at the graphene/MoS2 interface at cyclotron resonance and a photovoltage is generated. The proposed method is an infrared photodetection technique through out-of-plane transport at the vdW junction, which is distinct from the previously reported methods that use in-plane transport in graphene for electronic detection of the cyclotron resonance. Despite the simple structure of our device with a single-vdW junction, our method exhibits a very high sensitivity of about 10^6 V/W, which shows an improvement of three orders of magnitude over the previously reported values. Therefore, the proposed method displays a high potential for cyclotron resonance-based infrared photodetector applications. △ Less

Submitted 31 October, 2019; v1 submitted 18 September, 2019; originally announced September 2019.

Comments: This article has been published in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 115, 143101 (2019)

Photo-Nernst detection of cyclotron resonance in partially irradiated graphene

Authors: Kei Kinoshita, Rai Moriya, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida

Abstract: Cyclotron resonance of a Landau-quantized graphene can absorb significant amount of infrared light. However, application of this phenomenon to the photodetector had been limited due to the lack of efficient photon to charge conversion scheme. Here, we demonstrate the detection of cyclotron resonance in a partially metal-masked monolayer graphene two-terminal device using photo-Nernst effect. Due t… ▽ More Cyclotron resonance of a Landau-quantized graphene can absorb significant amount of infrared light. However, application of this phenomenon to the photodetector had been limited due to the lack of efficient photon to charge conversion scheme. Here, we demonstrate the detection of cyclotron resonance in a partially metal-masked monolayer graphene two-terminal device using photo-Nernst effect. Due to the presence of the mask, incident infrared light is irradiated on only one-half of the graphene channel. This partial irradiation creates a temperature gradient perpendicular to the graphene channel. In the presence of an external magnetic field, thermopower is generated perpendicular to the temperature gradient due to the Nernst effect. Consequently, photo-Nernst voltage is generated along the graphene channel, which can be detected from the contacts on both ends of the channel. We demonstrate selective detection of the photo-Nernst effect while minimizing the other photovoltaic contributions, such as the photo-Seebeck effect. We investigate the dependence of the photo-Nernst effect on magnetic field and excitation wavelength, which reveals a significant enhancement of photo-Nernst signal at the cyclotron resonance conditions in graphene. Our finding could facilitate the realization of far-infrared light detector using cyclotron resonance of graphene. △ Less

Submitted 31 October, 2019; v1 submitted 8 September, 2019; originally announced September 2019.

Comments: This paper has been published in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 115, 153102 (2019)

Scalable Majorana vortex modes in iron-based superconductors

Authors: Ching-Kai Chiu, T. Machida, Yingyi Huang, T. Hanaguri, Fu-Chun Zhang

Abstract: A vortex in an s-wave superconductor with a surface Dirac cone can trap a Majorana bound state with zero energy leading to a zero-bias peak (ZBP) of tunneling conductance. The iron-based superconductor FeTe$_x$Se$_{1-x}$ is one of the material candidates hosting these Majorana vortex modes. It has been observed by recent scanning tunneling spectroscopy measurement that the fraction of vortex cores… ▽ More A vortex in an s-wave superconductor with a surface Dirac cone can trap a Majorana bound state with zero energy leading to a zero-bias peak (ZBP) of tunneling conductance. The iron-based superconductor FeTe$_x$Se$_{1-x}$ is one of the material candidates hosting these Majorana vortex modes. It has been observed by recent scanning tunneling spectroscopy measurement that the fraction of vortex cores possessing ZBPs decreases with increasing magnetic field on the surface of this iron-based superconductor. We construct a three-dimensional tight-binding model simulating the physics of over a hundred Majorana vortex modes in FeTe$_x$Se$_{1-x}$ with realistic physical parameters. Our simulation shows that the Majorana hybridization and disordered vortex distribution can explain the decreasing fraction of the ZBPs observed in the experiment. Furthermore, we find the statistics of the energy peaks off zero energy in our simulation with the Majorana physics in agreement with the analyzed peak statistics in the vortex cores from the experiment. This agreement and the explanation of the decreasing ZBP fraction lead to an important indication of scalable Majorana vortex modes in the iron-based superconductor. Thus, FeTe$_x$Se$_{1-x}$ can be one promising platform possessing scalable Majorana qubits for quantum computing. In addition, we further show the interplay of the ZBP presence and the vortex locations qualitatively agrees with our additional experimental observation and predict the universal spin signature of the hybridized multiple Majorana vortex modes. △ Less

Submitted 29 September, 2019; v1 submitted 30 April, 2019; originally announced April 2019.

Comments: 10 pages, 7 figures, Supplementary Information

Journal ref: Science Advances Vol. 6, no. 9, eaay0443 (2020)

Dry release transfer of graphene and few-layer h-BN by utilizing thermoplasticity of polypropylene carbonate for fabricating edge-contact-free van der Waals heterostructures

Authors: Kei Kinoshita, Rai Moriya, Momoko Onodera, Yusai Wakafuji, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida

Abstract: The dry release transfer of two-dimensional (2D) materials such as graphene, h-BN, and TMDs is a versatile method for fabricating high-quality van der Waals heterostructures. Up until now, polydimethylpolysiloxane (PDMS) sheets have been widely used for the dry release transfer of TMD materials. However, this method has been known to have limitations that make it difficult to transfer few-layer-th… ▽ More The dry release transfer of two-dimensional (2D) materials such as graphene, h-BN, and TMDs is a versatile method for fabricating high-quality van der Waals heterostructures. Up until now, polydimethylpolysiloxane (PDMS) sheets have been widely used for the dry release transfer of TMD materials. However, this method has been known to have limitations that make it difficult to transfer few-layer-thick graphene and h-BN because of the difficulty to fabricate these materials on PDMS. As an alternative method, we demonstrate the dry release transfer of single- and bi-layer graphene and few-layer h-BN in this study by utilizing poly(propylene) carbonate (PPC) films. Because of the strong adhesion between PPC and 2D materials around room temperature, we demonstrate that single- to few-layer graphene, as well as few-layer h-BN, can be fabricated on a spin-coated PPC film/290-nm-thick SiO2/Si substrate via the mechanical exfoliation method. In addition, we show that these few-layer crystals are clearly distinguishable using an optical microscope with the help of optical interference. Because of the thermoplastic properties of PPC film, the adhesion force between the 2D materials and PPC significantly decreases at about 70 °C. Therefore, we demonstrate that single- to few-layer graphene, as well as few-layer h-BN flakes, on PPC can be easily dry-transferred onto another h-BN substrate. This method enables a multilayer van der Waals heterostructure to be constructed with a minimum amount of polymer contamination. We demonstrate the fabrication of encapsulated h-BN/graphene/h-BN devices and graphene/few-layer h-BN/graphene vertical-tunnel-junction devices using this method. Since devices fabricated by this method do not require an edge-contact scheme, our finding provide a simples method for constructing high-quality graphene and h-BN-based van der Waals heterostructures. △ Less

Submitted 27 April, 2019; originally announced April 2019.

Comments: 25 pages, 5 figures

Journal ref: This is a pre-print of an article published in npj 2D Materials and Applications 3, 22 (2019) . The final authenticated version is available online at following DOI

Zero-energy vortex bound state in the superconducting topological surface state of Fe(Se,Te)

Authors: T. Machida, Y. Sun, S. Pyon, S. Takeda, Y. Kohsaka, T. Hanaguri, T. Sasagawa, T. Tamegai

Abstract: Majorana quasiparticles (MQPs) in condensed matter play an important role in strategies for topological quantum computing but still remain elusive. Vortex cores of topological superconductors may accommodate MQPs that appear as the zero-energy vortex bound state (ZVBS). An iron-based superconductor Fe(Se,Te) possesses a superconducting topological surface state that has been investigated by scanni… ▽ More Majorana quasiparticles (MQPs) in condensed matter play an important role in strategies for topological quantum computing but still remain elusive. Vortex cores of topological superconductors may accommodate MQPs that appear as the zero-energy vortex bound state (ZVBS). An iron-based superconductor Fe(Se,Te) possesses a superconducting topological surface state that has been investigated by scanning tunneling microscopies to detect the ZVBS. However, the results are still controversial. Here, we performed spectroscopic-imaging scanning tunneling microscopy with unprecedentedly high energy resolution to clarify the nature of the vortex bound states in Fe(Se,Te). We found the ZVBS at 0 $\pm$ 20 $μ$eV suggesting its MQP origin, and revealed that some vortices host the ZVBS while others do not. The fraction of vortices hosting the ZVBS decreases with increasing magnetic field, while chemical and electronic quenched disorders are apparently unrelated to the ZVBS. These observations elucidate the conditions to achieve the ZVBS, and may lead to controlling MQPs. △ Less

Submitted 24 December, 2018; v1 submitted 21 December, 2018; originally announced December 2018.

Comments: 7 pages, 4 figures, Supplementary information is available at http://www.riken.jp/epmrt/Machida/SI/FeSeTe_vortex181221_suppl_arXiv.pdf

Journal ref: Nature Materials 18, 811 (2019)

Optical coupling between atomically-thin black phosphorus and a two dimensional photonic crystal nanocavity

Authors: Yasutomo Ota, Rai Moriya, Naoto Yabuki, Miho Arai, Masahiro Kakuda, Satoshi Iwamoto, Tomoki Machida, Yasuhiko Arakawa

Abstract: Atomically-thin black phosphorus (BP) is an emerging two dimensional (2D) material exhibiting bright photoluminescence in the near infrared. Coupling its radiation to photonic nanostructures will be an important step toward the realization of 2D material based nanophotonic devices that operate efficiently in the near infrared, which includes the technologically important optical telecommunication… ▽ More Atomically-thin black phosphorus (BP) is an emerging two dimensional (2D) material exhibiting bright photoluminescence in the near infrared. Coupling its radiation to photonic nanostructures will be an important step toward the realization of 2D material based nanophotonic devices that operate efficiently in the near infrared, which includes the technologically important optical telecommunication wavelength bands. In this letter, we demonstrate the optical coupling between atomically-thin BP and a 2D photonic crystal nanocavity. We employed a home-build dry transfer apparatus for placing a thin BP flake on the surface of the nanocavity. Their optical coupling was analyzed through measuring cavity mode emission under optical carrier injection at room temperature. △ Less

Submitted 28 September, 2018; originally announced September 2018.

Comments: 13 pages, 4 figures. This article has already been published in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 110, 223105 (2017)

Photo-thermoelectric detection of cyclotron resonance in asymmetrically carrier-doped graphene two-terminal device

Authors: Kei Kinoshita, Rai Moriya, Miho Arai, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida

Abstract: Graphene is known to show a significant photo-thermoelectric effect that can exceed its photovoltaic contribution. Here, by utilizing this effect, we demonstrate a photovoltage measurement of cyclotron resonance in a double-back-gated h-BN/graphene/h-BN two-terminal device. A graphite local bottom gate was fabricated in addition to a p-doped Si global back gate. By tuning the two gate voltages, an… ▽ More Graphene is known to show a significant photo-thermoelectric effect that can exceed its photovoltaic contribution. Here, by utilizing this effect, we demonstrate a photovoltage measurement of cyclotron resonance in a double-back-gated h-BN/graphene/h-BN two-terminal device. A graphite local bottom gate was fabricated in addition to a p-doped Si global back gate. By tuning the two gate voltages, an in-plane graphene junction having an asymmetric carrier-doping profile was created. With the help of this asymmetric structure, the photo-thermoelectric voltage generated in the vicinity of the metal-electrode/graphene junction was detected. At a low temperature and in the presence of a magnetic field, a photo-induced voltage was measured under the irradiation of an infrared laser (Wavelength= 9.28 to 10.61 micron). We observed a strong enhancement of the photovoltage signal under the cyclotron resonance condition, at which the energy of excitation coincides with a transition between Landau levels. These results highlight the possibility of using the photo-thermoelectric effect in graphene for THz photo-detection. △ Less

Submitted 6 September, 2018; originally announced September 2018.

Comments: 18 pages, 4 Figures, Supplementary information is not included

Journal ref: Appl. Phys. Lett. 113, 103102 (2018)

A scanning tunneling microscope for spectroscopic imaging below 90 mK in magnetic fields up to 17.5 T

Authors: T. Machida, Y. Kohsaka, T. Hanaguri

Abstract: We describe the development and performance of an ultra-high vacuum scanning tunneling microscope working under combined extreme conditions of ultra-low temperatures and high magnetic fields. We combined a top-loading dilution refrigerator and a standard bucket dewar with a bottom-loading superconducting magnet to achieve 4.5 days operating time, which is long enough to perform various spectroscop… ▽ More We describe the development and performance of an ultra-high vacuum scanning tunneling microscope working under combined extreme conditions of ultra-low temperatures and high magnetic fields. We combined a top-loading dilution refrigerator and a standard bucket dewar with a bottom-loading superconducting magnet to achieve 4.5 days operating time, which is long enough to perform various spectroscopic-imaging measurements. To bring the effective electron temperature closer to the mixing-chamber temperature, we paid particular attention to filtering out the radio-frequency noise, as well as enhancing the thermal link between the microscope unit and the mixing chamber. We estimated the lowest effective electron temperature to be below 90 mK by measuring the superconducting-gap spectrum of aluminum. We confirmed the long-term stability of the spectroscopic-imaging measurement by visualizing superconducting vortices in the cuprate superconductor Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$. △ Less

Submitted 24 July, 2018; originally announced July 2018.

Comments: 12 pages, 10 figures

Heat transfer at the van der Waals interface between graphene and NbSe2

Authors: Yohta Sata, Rai Moriya, Naoto Yabuki, Satoru Masubuchi, Tomoki Machida

Abstract: Graphene has been widely used to construct low-resistance van der Waals (vdW) contacts to other two-dimensional (2D) materials. However, a rise of electron temperature of the graphene under a current flow has not been seriously considered in many applications. Owing to its small electronic heat capacity and electron-phonon coupling, electron temperature of the graphene can be increased easily by t… ▽ More Graphene has been widely used to construct low-resistance van der Waals (vdW) contacts to other two-dimensional (2D) materials. However, a rise of electron temperature of the graphene under a current flow has not been seriously considered in many applications. Owing to its small electronic heat capacity and electron-phonon coupling, electron temperature of the graphene can be increased easily by the application of current. The heat generated within the graphene is transferred to the contacted 2D materials through the vdW interface and potentially influences their properties. Here, we compare the superconducting critical currents of an NbSe2 flake for two different methods of current application: with a Au/Ti electrode fabricated by thermal evaporation and with a graphene electrode contacted to the NbSe2 flake through a vdW interface. The influence of the heat transfer from the graphene to NbSe2 is detected through the change of the superconductivity of NbSe2. We found that the critical current of NbSe2 significantly reduces when the current is applied with the graphene electrode compared to that from the conventional Au/Ti electrode. Further, since the electron heating in graphene exhibits ambipolar back-gate modulation, we demonstrate the electric field modulation of the critical current in NbSe2 when the current is applied with graphene electrode. These results are attributed to the significant heat transfer from the graphene electrode to NbSe2 through vdW interface. △ Less

Submitted 18 July, 2018; originally announced July 2018.

Comments: 22 pages, 8 figures

Journal ref: Phys. Rev. B 98, 035422 (2018)

Imaging bulk and edge transport near the Dirac point in graphene moiré superlattices

Authors: Ziwei Dou, Sei Morikawa, Alessandro Cresti, Shu-Wei Wang, Charles G. Smith, Christos Melios, Olga Kazakova, Kenji Watanabe, Takashi Taniguchi, Satoru Masubuchi, Tomoki Machida, Malcolm R. Connolly

Abstract: Van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride exhibit a moiré superlattice that is expected to break sublattice symmetry. Despite an energy gap of several tens of millielectron volts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states a… ▽ More Van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride exhibit a moiré superlattice that is expected to break sublattice symmetry. Despite an energy gap of several tens of millielectron volts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states are likely to play a role in this behavior, their precise nature is unclear. We present a scanning gate microscopy study of moiré superlattice devices with comparable activation energy but with different charge disorder levels. In the device with higher charge impurity (~${10}^{10}$ $cm^{-2}$) and lower resistivity (~$10$ $kΩ$) at the Dirac point we observe current flow along the graphene edges. Combined with simulations, our measurements suggest that enhanced edge doping is responsible for this effect. In addition, a device with low charge impurity (~$10^9$ $cm^{-2}$) and higher resistivity (~$100$ $kΩ$) shows subgap states in the bulk, consistent with the absence of shunting by edge currents. △ Less

Submitted 21 November, 2017; originally announced November 2017.

Journal ref: Nano Letters18, 2530 (2018)

Appearance of a Domain Structure and its Electronic states in Iron Doped 1$T$-TaS$_2$ Observed using Scanning Tunneling Microscopy and Spectroscopy

Authors: Yuita Fujisawa, Tatsunari Shimabukuro, Hiroyuki Kojima, Kai Kobayashi, Shun Ohta, Tadashi Machida, Satoshi Demura, Hideaki Sakata

Abstract: In this paper, we report on scanning tunneling microscopy and spectroscopy (STM/STS) measurements on iron doped 1$T$-Ta$_{1-x}$Fe$_x$S$_2$. A novel domain structure composed of the domains with localized nature divided by the walls is observed in Ta$_{0.99}$Fe$_{0.01}$S$_2$, where the Mott transition is completely suppressed. This indicates that the melting of the Mott state accompanies the appear… ▽ More In this paper, we report on scanning tunneling microscopy and spectroscopy (STM/STS) measurements on iron doped 1$T$-Ta$_{1-x}$Fe$_x$S$_2$. A novel domain structure composed of the domains with localized nature divided by the walls is observed in Ta$_{0.99}$Fe$_{0.01}$S$_2$, where the Mott transition is completely suppressed. This indicates that the melting of the Mott state accompanies the appearance of the domain structure. Since the number of walls increase in superconducting Ta$_{0.98}$Fe$_{0.02}$S$_2$, the domain walls seem to be responsible for superconductivity in iron doped 1$T$-TaS$_2$. △ Less

Submitted 9 October, 2017; originally announced October 2017.

Journal ref: Journal of the Physical Society of Japan 86, 113703 (2017)

Two distinct superconducting pairing states divided by the nematic end point in FeSe$_{1-x}$S$_{x}$

Authors: T. Hanaguri, K. Iwaya, Y. Kohsaka, T. Machida, T. Watashige, S. Kasahara, T. Shibauchi, Y. Matsuda

Abstract: Unconventional superconductivity often competes or coexists with other electronic orders. In iron-based superconductors, relationship between superconductivity and the nematic state, where the lattice rotational symmetry is spontaneously broken in the electronic states, has been discussed but unclear. Using spectroscopic-imaging scanning tunneling microscopy, we investigate how the band structure… ▽ More Unconventional superconductivity often competes or coexists with other electronic orders. In iron-based superconductors, relationship between superconductivity and the nematic state, where the lattice rotational symmetry is spontaneously broken in the electronic states, has been discussed but unclear. Using spectroscopic-imaging scanning tunneling microscopy, we investigate how the band structure and the superconducting gap evolve in FeSe$_{1-x}$S$_x$, as the sulfur substitution suppresses nematicity that eventually diminishes at the nematic end point (NEP) at $x=0.17$. Anisotropic quasiparticle-interference patterns, which represent the nematic band structure, gradually become isotropic with increasing $x$ without detectable anomalies in the band parameters at the NEP. By contrast, the superconducting gap, which is almost intact in the nematic phase, suddenly shrinks as soon as $x$ exceeds the NEP. Our observation implies that the presence or absence of nematicity results in two distinct pairing states, whereas the pairing interaction is insensitive to the strength of nematicity. This provides a clue for understanding the pairing mechanism. △ Less

Submitted 6 October, 2017; originally announced October 2017.

Comments: 9 pages, 4 figures. Supplementary information is available at http://www.riken.jp/epmrt/Hanaguri/SI/FeSeS_QPI_SI.pdf

Journal ref: Sci. Adv. 4, eaar6419 (2018)

Inter-subband Landau level couplings induced by in-plane magnetic fields in trilayer graphene

Authors: Yuta Asakawa, Satoru Masubuchi, Naoko Inoue, Sei Morikawa, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida

Abstract: We observed broken-symmetry quantum Hall effects and level crossings between spin- and valley- resolved Landau levels (LLs) in Bernal stacked trilayer graphene. When the magnetic field was tilted with respect to sample normal from $0^{\circ}$ to $66^\circ$, the LL crossings formed at intersections of zeroth and second LLs from monolayer-graphene-like and bilayer-graphene-like subbands, respectivel… ▽ More We observed broken-symmetry quantum Hall effects and level crossings between spin- and valley- resolved Landau levels (LLs) in Bernal stacked trilayer graphene. When the magnetic field was tilted with respect to sample normal from $0^{\circ}$ to $66^\circ$, the LL crossings formed at intersections of zeroth and second LLs from monolayer-graphene-like and bilayer-graphene-like subbands, respectively, exhibited a sequence of transitions. The results indicate the LLs from different subbands are coupled by in-plane magnetic fields ($B_{\parallel}$), which was explained by developing the tight-binding model Hamiltonian of trilayer graphene under $B_{\parallel}$. △ Less

Submitted 25 September, 2017; originally announced September 2017.

Comments: 4 figures, accepted for publication in Physical Review Letters

Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2

Authors: Yuji Yamasaki, Rai Moriya, Miho Arai, Satoru Masubuchi, Sunseng Pyon, Tsuyoshi Tamegai, Keiji Ueno, Tomoki Machida

Abstract: Ferromagnetic van der Waals (vdW) materials are in demand for spintronic devices with all-two-dimensional-materials heterostructures. Here, we demonstrate mechanical exfoliation of magnetic-atom-intercalated transition metal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously such intercalated materials were thought difficult to exfoliate. Magnetotransport in exfoliated tens-of-nanometres-t… ▽ More Ferromagnetic van der Waals (vdW) materials are in demand for spintronic devices with all-two-dimensional-materials heterostructures. Here, we demonstrate mechanical exfoliation of magnetic-atom-intercalated transition metal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously such intercalated materials were thought difficult to exfoliate. Magnetotransport in exfoliated tens-of-nanometres-thick flakes revealed ferromagnetic ordering below its Curie temperature TC ~ 110 K as well as strong in-plane magnetic anisotropy; these are identical to its bulk properties. Further, van der Waals heterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnet Fe1/4TaS2 is demonstrated using a dry-transfer method. The fabricated heterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxide tunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealing possible spin injection and detection with these exfoliatable ferromagnetic materials through the vdW junction. △ Less

Submitted 25 September, 2017; originally announced September 2017.

Comments: 21 pages, 10 Figures, published in 2D Materials

Journal ref: 2D Materials 4, 041007 (2017)

Full-gap superconductivity in spin-polarized surface states of topological semimetal $β$-PdBi$_2$

Authors: K. Iwaya, Y. Kohsaka, K. Okawa, T. Machida, M. S. Bahramy, T. Hanaguri, T. Sasagawa

Abstract: A bulk superconductor possessing a topological surface state at the Fermi level is a promising system to realize long-sought topological superconductivity. Although several candidate materials have been proposed, experimental demonstrations concurrently exploring spin textures and superconductivity at the surface have remained elusive. Here we perform spectroscopic-imaging scanning tunnelling micr… ▽ More A bulk superconductor possessing a topological surface state at the Fermi level is a promising system to realize long-sought topological superconductivity. Although several candidate materials have been proposed, experimental demonstrations concurrently exploring spin textures and superconductivity at the surface have remained elusive. Here we perform spectroscopic-imaging scanning tunnelling microscopy on the centrosymmetric superconductor $β$-PdBi$_2$ that hosts a topological surface state. By combining first-principles electronic-structure calculations and quasiparticle interference experiments, we determine the spin textures at the surface, and show not only the topological surface state but also all other surface bands exhibit spin polarizations parallel to the surface. We find that the superconducting gap fully opens in all the spin-polarized surface states. This behaviour is consistent with a possible spin-triplet order parameter expected for such in-plane spin textures, but the observed superconducting gap amplitude is comparable to that of the bulk, suggesting that the spin-singlet component is predominant in $β$-PdBi$_2$. △ Less

Submitted 14 November, 2017; v1 submitted 28 August, 2017; originally announced August 2017.

Comments: 22 pages, 8 figures. Figure 3 is corrected

Journal ref: Nature Communications 8, 976 (2017)

Orbital-dependent quasiparticle scattering interference in 3R-NbS2

Authors: T. Machida, Y. Kohsaka, R. Suzuki, M. Ochi, K. Iwaya, R. Arita, T. Hanaguri, Y. Iwasa

Abstract: A valley degree of freedom (DOF) in transition metal dichalcogenides with broken inversion symmetry can be controlled through spin and orbital DOFs owing to their valley-contrasting characters. Another important aspect of the spin and orbital DOFs is that they affect quasiparticle scattering processes that govern the valley lifetime. Here we combine quasiparticle-interference (QPI) imaging experim… ▽ More A valley degree of freedom (DOF) in transition metal dichalcogenides with broken inversion symmetry can be controlled through spin and orbital DOFs owing to their valley-contrasting characters. Another important aspect of the spin and orbital DOFs is that they affect quasiparticle scattering processes that govern the valley lifetime. Here we combine quasiparticle-interference (QPI) imaging experiments and theoretical simulations to study the roles of the spin and orbital DOFs in 3R-NbS2. We find that the QPI signal arising from an inter-valley scattering is noticeably weaker than that caused by an intra-valley scattering. We show that this behavior is predominantly associated with the orbital DOF, signifying the different spin and orbital structures of spin-split bands at each valley. These findings provide important insights into understanding the valley-related transport properties. △ Less

Submitted 9 August, 2017; v1 submitted 6 August, 2017; originally announced August 2017.

Comments: 12 pages, 6 figures, accepted for publication in PRB

Journal ref: Physical Review B 96, 075206 (2017)

Spin-orbit scattering visualized in quasiparticle interference

Authors: Y. Kohsaka, T. Machida, K. Iwaya, M. Kanou, T. Hanaguri, T. Sasagawa

Abstract: In the presence of spin-orbit coupling, electron scattering off impurities depends on both spin and orbital angular momentum of electrons -- spin-orbit scattering. Although some transport properties are subject to spin-orbit scattering, experimental techniques directly accessible to this effect are limited. Here we show that a signature of spin-orbit scattering manifests itself in quasiparticle in… ▽ More In the presence of spin-orbit coupling, electron scattering off impurities depends on both spin and orbital angular momentum of electrons -- spin-orbit scattering. Although some transport properties are subject to spin-orbit scattering, experimental techniques directly accessible to this effect are limited. Here we show that a signature of spin-orbit scattering manifests itself in quasiparticle interference (QPI) imaged by spectroscopic-imaging scanning tunneling microscopy. The experimental data of a polar semiconductor BiTeI are well reproduced by numerical simulations with the $T$-matrix formalism that include not only scalar scattering normally adopted but also spin-orbit scattering stronger than scalar scattering. To accelerate the simulations, we extend the standard efficient method of QPI calculation for momentum-independent scattering to be applicable even for spin-orbit scattering. We further identify a selection rule that makes spin-orbit scattering visible in the QPI pattern. These results demonstrate that spin-orbit scattering can exert predominant influence on QPI patterns and thus suggest that QPI measurement is available to detect spin-orbit scattering. △ Less

Submitted 17 March, 2017; originally announced March 2017.

Comments: 21 pages, 6 figures

Journal ref: Phys. Rev. B 95, 115307 (2017)

Dirac fermion reflector by ballistic graphene sawtooth-shaped npn junctions

Authors: Sei Morikawa, Quentin Wilmart, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Bernard Plaçais, Tomoki Machida

Abstract: We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the first straight np interface works as a collimator and the collimated ballistic carriers can be totally reflected at the second zigzag pn interface. We observed cl… ▽ More We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the first straight np interface works as a collimator and the collimated ballistic carriers can be totally reflected at the second zigzag pn interface. We observed clear resistance enhancement around the np+n regime, which is in good agreement with the numerical simulation. The tunable reflectance of ballistic carriers could be an elementary and important step for realizing ultrahigh-mobility graphene field effect transistors utilizing Dirac fermion optics in the near future. △ Less

Submitted 13 February, 2017; originally announced February 2017.

N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials

Authors: Yohta Sata, Rai Moriya, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida

Abstract: We demonstrated n-type and p-type carrier injections into a transition metal dichalcogenide (TMD) WSe2 using van der Waals (vdW) contacts of two-dimensional (2D) materials: graphite for an n-type contact and NbSe2 for a p-type contact. Instead of conventional methods such as the evaporation of metals on TMD, 2D metals were transferred onto WSe2 in order to form van der Waals contacts. With these c… ▽ More We demonstrated n-type and p-type carrier injections into a transition metal dichalcogenide (TMD) WSe2 using van der Waals (vdW) contacts of two-dimensional (2D) materials: graphite for an n-type contact and NbSe2 for a p-type contact. Instead of conventional methods such as the evaporation of metals on TMD, 2D metals were transferred onto WSe2 in order to form van der Waals contacts. With these contacts, we demonstrated a small Schottky barrier height for both carrier polarities. Our finding reveals the potential of a high-performance vdW metal/semiconductor contact for use in electronics applications. △ Less

Submitted 28 March, 2017; v1 submitted 8 February, 2017; originally announced February 2017.

Comments: 15 pages, 3 figures

Journal ref: Jpn. J. Appl. Phys. 56 04CK09 (2017)

Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy

Authors: Takehiro Yamaguchi, Rai Moriya, Yoichiro Oki, Shinya Yamada, Satoru Masubuchi, Kohei Hamada, Tomoki Machida

Abstract: We demonstrate electrical spin injection into multilayer graphene (MLG) in a lateral spin valve device from a highly spin-polarized Co2FeSi (CFS) Huesler electrode. Exfoliated MLG was transferred onto pre-patterned epitaxial CFS wires grown on an Si(111) substrate by a polymer-based transfer method. This method enabled us to fabricate multiple single-crystal CFS electrodes in contact with MLG. Ele… ▽ More We demonstrate electrical spin injection into multilayer graphene (MLG) in a lateral spin valve device from a highly spin-polarized Co2FeSi (CFS) Huesler electrode. Exfoliated MLG was transferred onto pre-patterned epitaxial CFS wires grown on an Si(111) substrate by a polymer-based transfer method. This method enabled us to fabricate multiple single-crystal CFS electrodes in contact with MLG. Electrical spin injection from CFS to MLG was detected through non-local magnetoresistance (MR) measurement. A non-local spin signal of 430 ohm was observed; this is the largest value among all reported non-local MR values in graphene-based devices. △ Less

Submitted 13 May, 2016; originally announced May 2016.

Comments: 12 pages, 5 figures

Journal ref: Applied Physics Express 9, 063006 (2016)

Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

Authors: Miho Arai, Rai Moriya, Naoto Yabuki, Satoru Masubuchi, Keiji Ueno, Tomoki Machida

Abstract: We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2. The vdW interlayer coupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an exter… ▽ More We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2. The vdW interlayer coupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material through the vdW junction. △ Less

Submitted 11 September, 2015; originally announced September 2015.

Comments: 16 pages, 4 figures

Journal ref: Applied Physics Letters 107, 103107 (2015)

Bipartite electronic superstructures in the vortex core of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$

Authors: T. Machida, Y. Kohsaka, K. Matsuoka, K. Iwaya, T. Hanaguri, T. Tamegai

Abstract: A magnetic field applied to type-II superconductors introduces quantized vortices that locally quench superconductivity, providing a unique opportunity to investigate electronic orders that may compete with superconductivity. This is especially true in cuprate superconductors in which mutual relationships among superconductivity, pseudogap, and broken-spatial-symmetry states have attracted much at… ▽ More A magnetic field applied to type-II superconductors introduces quantized vortices that locally quench superconductivity, providing a unique opportunity to investigate electronic orders that may compete with superconductivity. This is especially true in cuprate superconductors in which mutual relationships among superconductivity, pseudogap, and broken-spatial-symmetry states have attracted much attention. Here we observe energy and momentum dependent bipartite electronic superstructures in the vortex core of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ using spectroscopic-imaging scanning tunneling microscopy (SI-STM). In the low-energy range where the nodal Bogoliubov quasiparticles are well-defined, we show that the quasiparticle scattering off vortices generates the electronic superstructure known as "vortex checkerboard". In the high-energy region where the pseudogap develops, vortices amplify the broken-spatial-symmetry patterns that preexist in zero field. These data reveal canonical d-wave superconductivity near the node, yet competition between superconductivity and broken-spatial-symmetry states near the antinode. △ Less

Submitted 4 August, 2015; v1 submitted 3 August, 2015; originally announced August 2015.

Comments: 14 pages, 9 figures, If you need manuscript with high resolution figures, please contact us

Journal ref: Nature Communications 7, 11747, (2016)

Imaging ballistic carrier trajectories in graphene using scanning gate microscopy

Authors: Sei Morikawa, Ziwei Dou, Shu-Wei Wang, Charles Gorden Smith, Kenji Watanabe, Takashi Taniguchi, Satoru Masubuchi, Tomoki Machida, Malcolm Richard Connolly

Abstract: We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collecto… ▽ More We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local electric field generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector. △ Less

Submitted 15 December, 2015; v1 submitted 2 August, 2015; originally announced August 2015.

Comments: 15 pages including 3 figures. Appl. Phys. Lett. 107, 243102 (2015)

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

Authors: Yohta Sata, Rai Moriya, Sei Morikawa, Naoto Yabuki, Satoru Masubuchi, Tomoki Machida

Abstract: We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an extern… ▽ More We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10^5. These results point to the potential high performance of the graphene/MoSe2 vdW heterostructure for electronics applications. △ Less

Submitted 18 July, 2015; originally announced July 2015.

Comments: 17 pages, 4 figures

Journal ref: Appl. Phys. Lett. 107, 023109 (2015)

Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors

Authors: Rai Moriya, Takehiro Yamaguchi, Yoshihisa Inoue, Yohta Sata, Sei Morikawa, Satoru Masubuchi, Tomoki Machida

Abstract: We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus the external electric field. Under the application of a bias voltage VB between graphene and the metal layer in the graphene/MoS2/metal heterostructure for dri… ▽ More We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus the external electric field. Under the application of a bias voltage VB between graphene and the metal layer in the graphene/MoS2/metal heterostructure for driving current through the van der Waals interface, the electric field across the MoS2 dielectric induces a shift in the Fermi level of graphene. When the Fermi level of graphene coincides with the Dirac point, a significant nonlinearity appears in the measured I-V curve, thus enabling us to perform spectroscopy of the Dirac point. By detecting the Dirac point for different back-gate voltages, we revealed that the capacitance of the nanometer-thick MoS2 layer can be determined from a simple DC transport measurement. △ Less

Submitted 2 June, 2015; originally announced June 2015.

Comments: 14 pages, 3 figures

Journal ref: Appl. Phys. Lett. 106, 223103 (2015)

Edge-channel interferometer at the graphene quantum Hall pn junction

Authors: Sei Morikawa, Satoru Masubuchi, Rai Moriya, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida

Abstract: We demonstrate a quantum Hall edge-channel interferometer in a high-quality graphene pn junction under a high magnetic field. The co-propagating p and n quantum Hall edge channels traveling along the pn interface functions as a built-in Aharanov-Bohm-type interferometer, the interferences in which are sensitive to both the external magnetic field and the carrier concentration. The trajectories of… ▽ More We demonstrate a quantum Hall edge-channel interferometer in a high-quality graphene pn junction under a high magnetic field. The co-propagating p and n quantum Hall edge channels traveling along the pn interface functions as a built-in Aharanov-Bohm-type interferometer, the interferences in which are sensitive to both the external magnetic field and the carrier concentration. The trajectories of peak and dip in the observed resistance oscillation are well reproduced by our numerical calculation that assumes magnetic flux quantization in the area enclosed by the co-propagating edge channels. Coherent nature of the co-propagating edge channels are confirmed by the checkerboard-like pattern in the dc-bias and magnetic-field dependences of the resistance oscillations. △ Less

Submitted 29 March, 2015; originally announced March 2015.

Comments: 16 pages, 4 figures, supplementary material: 3 pages, 2 figures

Journal ref: Appl. Phys. Lett. 106, 183101 (2015)

Modulation of Schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current ON-OFF ratio

Authors: Yohta Sata, Rai Moriya, Takehiro Yamaguchi, Yoshihisa Inoue, Sei Morikawa, Naoto Yabuki, Satoru Masubuchi, Tomoki Machida

Abstract: Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer enables us to modulate the Schottky barrier height; thus gives rise to the control of the current flow across the interface. By analyzing the temperature depende… ▽ More Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer enables us to modulate the Schottky barrier height; thus gives rise to the control of the current flow across the interface. By analyzing the temperature dependence of the conductance, the modulation of Schottky barrier height Δφ has been directly determined. We observed significant MoS2 layer number dependence of Δφ. Moreover, we demonstrate that the device which shows larger Δφ exhibits larger current modulation; this is consistent with the fact that the transport of these devices is dominated by graphene/MoS2 Schottky barrier. △ Less

Submitted 7 March, 2015; originally announced March 2015.

Comments: Proceeding for 2014 International Conference on Solid State Devices and Materials (SSDM2014)

Journal ref: Japanese Journal of Applied Physics 54, 04DJ04 (2015)

Visualizing the Pt doping effect on surface and electronic structure in Ir_{1-x}Pt_{x}Te_{2} by scanning tunneling microscopy and spectroscopy

Authors: Y. Fujisawa, T. Machida, K. Igarashi, A. Kaneko, T. Mochiku, S. Ooi, M. Tachiki, K. Komori, K. Hirata, H. Sakata

Abstract: We report on the Pt doping effect on surface and electronic structure in Ir$_{\mathrm{1-x}}$Pt$_{\mathrm{x}}$Te$_ {\mathrm{2}}$ by scanning tunneling microscopy (STM) and spectroscopy (STS). The surface prepared by cleavage at 4.2 K shows a triangular lattice of topmost Te atoms. The compounds that undergo structural transition have supermodulation with a fixed wave vector $q = \frac{2π}{5a_m}$ (w… ▽ More We report on the Pt doping effect on surface and electronic structure in Ir$_{\mathrm{1-x}}$Pt$_{\mathrm{x}}$Te$_ {\mathrm{2}}$ by scanning tunneling microscopy (STM) and spectroscopy (STS). The surface prepared by cleavage at 4.2 K shows a triangular lattice of topmost Te atoms. The compounds that undergo structural transition have supermodulation with a fixed wave vector $q = \frac{2π}{5a_m}$ (where $a_m$ is the lattice constant in the monoclinic phase) despite the different Pt concentrations. The superconducting compounds show patch structures. The surface of the compound that exhibits neither the superconductivity nor the structural transition shows no superstructure. In all doped samples, the dopant is observed as a dark spot in STM images. The tunneling spectra near the dopant show the change in the local density of state at approximately -200 mV. Such microscopic effects of the dopant give us the keys for establishing a microscopic model of this material. △ Less

Submitted 3 March, 2015; originally announced March 2015.

Comments: 6 pages, 3 figures

Journal ref: J. Phys. Soc. Jpn. 84, 043706 (2015)

Tunneling transport in a few monolayer-thick WS2/graphene heterojunction

Authors: Takehiro Yamaguchi, Rai Moriya, Yoshihisa Inoue, Sei Morikawa, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida

Abstract: This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a few monolayers in thickness. Investigation of vertical transport in WS2 and MoS2 TMDs in graphene/TMD/metal heterostructures revealed that WS2 exhibits tunnel barrier characteristics when its thickness is between 2 to 5 mo… ▽ More This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a few monolayers in thickness. Investigation of vertical transport in WS2 and MoS2 TMDs in graphene/TMD/metal heterostructures revealed that WS2 exhibits tunnel barrier characteristics when its thickness is between 2 to 5 monolayers, whereas MoS2 experiences a transition from tunneling to thermionic emission transport with increasing thickness within the same range. Tunnel resistance in a graphene/WS2/metal heterostructure therefore increases exponentially with the number of WS2 layers, revealing the tunnel barrier height of WS2 to be 0.37 eV. △ Less

Submitted 9 December, 2014; v1 submitted 17 November, 2014; originally announced November 2014.

Comments: 15 pages, 3 figures

Journal ref: Appl. Phys. Lett. 105, 223109 (2014)

On the bad metallicity and phase diagrams of Fe$_{1+δ}X$ ($X$ =Te, Se, S, solid solutions): an electrical resistivity study

Authors: M. ElMassalami, K. Deguchi, T. Machida, H. Takeya, Y. Takano

Abstract: Based on a systematic analysis of the thermal evolution of the resistivities of Fe-based chalcogenides Fe$_{1+δ}$Te$_{1-x}X_{x}$ ($X$= Se, S), it is inferred that their often observed nonmetallic resistivities are related to a presence of two resistive channels: one is a high-temperature thermally-activated process while the other is a low-temperature log-in-$T$ process. On lowering temperature, t… ▽ More Based on a systematic analysis of the thermal evolution of the resistivities of Fe-based chalcogenides Fe$_{1+δ}$Te$_{1-x}X_{x}$ ($X$= Se, S), it is inferred that their often observed nonmetallic resistivities are related to a presence of two resistive channels: one is a high-temperature thermally-activated process while the other is a low-temperature log-in-$T$ process. On lowering temperature, there are often two metal-to-nonmetall crossover events: one from the high-$T$ thermally-activated nonmetallic regime into a metal-like phase and the other from the log-in-$T$ regime into a second metal-like phase. Based on these events, together with the magnetic and superconducting transitions, a phase diagram is constructed for each series. We discuss the origin of both processes as well as the associated crossover events. We also discuss how these resistive processes are being influenced by pressure, intercalation, disorder, doping, or sample condition and, in turn, how these modifications are shaping the associated phase diagrams. △ Less

Submitted 10 October, 2014; originally announced October 2014.

Comments: 6 pages, 4 figures, presented at 27th International Conference on Low Temperature Physics,LT27, Argentine, 2014. To be published in J. Phys: conf. series

Journal ref: Journal of Physics: Conference Series 568 (2014) 022012

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

Authors: Rai Moriya, Takehiro Yamaguchi, Yoshihisa Inoue, Sei Morikawa, Yohta Sata, Satoru Masubuchi, Tomoki Machida

Abstract: Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current ratios or ON current densities. We fabricate a graphene/MoS2/metal vertical heterostructure by using mechanical exfoliation and dry transfer of graphene and MoS… ▽ More Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current ratios or ON current densities. We fabricate a graphene/MoS2/metal vertical heterostructure by using mechanical exfoliation and dry transfer of graphene and MoS2 layers. The van der Waals interface between graphene and MoS2 exhibits a Schottky barrier, thus enabling the possibility of well-defined current rectification. The height of the Schottky barrier can be strongly modulated by an external gate electric field owing to the small density of states of graphene. We obtain large current modulation exceeding 10^5 simultaneously with a large current density of ~10^4 A/cm^2 , thereby demonstrating the superior performance of the exfoliated-graphene/MoS2/metal vertical field effect transistor △ Less

Submitted 29 August, 2014; originally announced August 2014.

Journal ref: Appl. Phys. Lett. 105, 083119 (2014)

Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well

Authors: Rai Moriya, Kentarou Sawano, Yusuke Hoshi, Satoru Masubuchi, Yasuhiro Shiraki, Andreas Wild, Christian Neumann, Gerhard Abstreiter, Dominique Bougeard, Takaaki Koga, Tomoki Machida

Abstract: The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba… ▽ More The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba SOI. Our findings reveal that the heavy hole (HH) in strained-Ge is a purely cubic-Rashba-system, which is consistent with the spin angular momentum mj = +-3/2 nature of the HH wave function. △ Less

Submitted 7 August, 2014; v1 submitted 5 August, 2014; originally announced August 2014.

Comments: To be published in Phys. Rev. Lett

Checkerboard stripe electronic state on cleaved surface of NdO$_{0.7}$F$_{0.3}$BiS$_{2}$ probed by scanning tunneling microscope

Authors: T. Machida, Y. Fujisawa, M. Nagao, S. Demura, K. Deguchi, Y. Mizuguchi, Y. Takano, H. Sakata

Abstract: We present scanning tunneling microscopy measurements on a cleaved surface of the recently discovered superconductor NdO$_{0.7}$F$_{0.3}$BiS$_{2}$ with a transition temperature ($T_{\mathrm{c}}$) of 5.1 K.Tunneling spectra at 4.2 K (below $T_{\mathrm{c}}$) and 22 K (above $T_{\mathrm{c}}$) show a large spectroscopic gap ($\sim$40 mV), which is inconsistent with the metallic nature demonstrated in… ▽ More We present scanning tunneling microscopy measurements on a cleaved surface of the recently discovered superconductor NdO$_{0.7}$F$_{0.3}$BiS$_{2}$ with a transition temperature ($T_{\mathrm{c}}$) of 5.1 K.Tunneling spectra at 4.2 K (below $T_{\mathrm{c}}$) and 22 K (above $T_{\mathrm{c}}$) show a large spectroscopic gap ($\sim$40 mV), which is inconsistent with the metallic nature demonstrated in bulk measurements. Moreover, we find two interesting real-space electronic features. The first feature is a `checkerboard stripe' electronic state characterized by an alternating arrangement of two types of nanocluster. In one cluster, one-dimensional electronic stripes run along one Bi-Bi direction, whereas, in the other cluster, the stripes run along the other Bi-Bi direction. The second feature is a nanoscale electronic inhomogeneity whose microscopic source seems to be atomic defects on the cleaved surface or dopant F atoms. △ Less

Submitted 17 October, 2014; v1 submitted 24 March, 2014; originally announced March 2014.

Comments: 5 pages, 4 figures

Journal ref: J. Phys. Soc. Jpn 83, 113701 (2014)

Visualization of the effect of structural supermodulation on electronic structure in IrTe$_{2}$ by scanning tunneling spectroscopy

Authors: T. Machida, Y. Fujisawa, K. Igarashi, A. Kaneko, S. Ooi, T. Mochiku, M. Tachiki, K. Komori, K. Hirata, H. Sakata

Abstract: We report on the scanning tunneling spectroscopy experiments on single crystals of IrTe$_{2}$. A structural supermodulation and a local density-of-states (LDOS) modulation with a wave vector of $q$ = 1/5$\times$$2π/a_{0}$ ($a_{0}$ is the lattice constant in the $ab$-plane) have been observed at 4.2K where the sample is in the monoclinic phase. %We cannot find an energy gap emerging reproducibly.%… ▽ More We report on the scanning tunneling spectroscopy experiments on single crystals of IrTe$_{2}$. A structural supermodulation and a local density-of-states (LDOS) modulation with a wave vector of $q$ = 1/5$\times$$2π/a_{0}$ ($a_{0}$ is the lattice constant in the $ab$-plane) have been observed at 4.2K where the sample is in the monoclinic phase. %We cannot find an energy gap emerging reproducibly.% on the region where the supermodulation resides. As synchronized with the supermodulation, the LDOS spatially modulates within two energy ranges (below -200 meV and around -100 meV). We further investigated the effect of the local perturbations including the antiphase boundaries and the twin boundaries on the LDOS. These perturbations also modify the LDOS below -200 meV and around -100 meV, even though the lattice distortions induced by these perturbations appear to be different from those by the supermodulation. Our results indicating several microscopic structural effects on the LDOS seem to offer crucial keys for the establishment of the microscopic model describing the parent state. △ Less

Submitted 3 December, 2013; originally announced December 2013.

Comments: 5 pages, 4 figures, to be published in Phys. Rev. B

Journal ref: Phys. Rev. B 88, 245125 (2013)

Observation of isosceles triangular electronic structure around excess iron atoms in Fe$_{1+δ}$Te

Authors: T. Machida, K. Kogure, T. Kato, H. Nakamura, H. Takeya, T. Mochiku, S. Ooi, Y. Mizuguchi, Y. Takano, K. Hirata, H. Sakata

Abstract: We present scanning tunneling microscopy and spectroscopy studies around an individual excess Fe atom, working as a local perturbation, in the parent material of the iron-chalcogenide superconductor Fe$_{1+δ}$Te. Spectroscopic imaging reveals a novel isosceles triangular electronic structure around the excess Fe atoms. Its spatial symmetry reects the underlying bicollinear antiferromagnetic spin s… ▽ More We present scanning tunneling microscopy and spectroscopy studies around an individual excess Fe atom, working as a local perturbation, in the parent material of the iron-chalcogenide superconductor Fe$_{1+δ}$Te. Spectroscopic imaging reveals a novel isosceles triangular electronic structure around the excess Fe atoms. Its spatial symmetry reects the underlying bicollinear antiferromagnetic spin state and the structural monoclinic symmetry. These findings provide important clues to understand the role of the excess Fe atoms, which complicate the understanding of the phenomena occurring in iron-chalcogenide materials. △ Less

Submitted 30 May, 2013; originally announced May 2013.

Comments: 6 pages, 5 figures, to be published in Phys. Rev. B

Journal ref: Phys. Rev. B 87, 214508 (2013)