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Contact induced spin relaxation in Hanle spin precession measurements
Authors:
T. Maassen,
I. J. Vera-Marun,
M. H. D. Guimarães,
B. J. van Wees
Abstract:
In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be backscattered into the leads and to lose their spin information. We study the effect of the resulting contact induced spin relaxation on spin transport, in particular o…
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In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be backscattered into the leads and to lose their spin information. We study the effect of the resulting contact induced spin relaxation on spin transport, in particular on non-local Hanle precession measurements. As the Hanle line shape is modified by the contact induced effects, the fits to Hanle curves can result in incorrectly determined spin transport properties of the transport channel. We quantify this effect that mimics a decrease of the spin relaxation time of the channel reaching more than 4 orders of magnitude and a minor increase of the diffusion coefficient by less than a factor of 2. Then we compare the results to spin transport measurements on graphene from the literature. We further point out guidelines for a Hanle precession fitting procedure that allows to reliably extract spin transport properties from measurements.
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Submitted 29 September, 2012;
originally announced October 2012.
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Enhancement of spin relaxation time in hydrogenated graphene spin valve devices
Authors:
M. Wojtaszek,
I. J. Vera-Marun,
T. Maassen,
B. J. van Wees
Abstract:
Hydrogen adsorbates in graphene are interesting as they are not only strong Coulomb scatterers but they also induce a change in orbital hybridization of the carbon network from sp^2 into sp^3. This change increases the spin-orbit coupling and is expected to largely modify spin relaxation. In this work we report the change in spin transport properties of graphene due to plasma hydrogenation. We obs…
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Hydrogen adsorbates in graphene are interesting as they are not only strong Coulomb scatterers but they also induce a change in orbital hybridization of the carbon network from sp^2 into sp^3. This change increases the spin-orbit coupling and is expected to largely modify spin relaxation. In this work we report the change in spin transport properties of graphene due to plasma hydrogenation. We observe an up to three-fold increase of spin relaxation time tau_S after moderate hydrogen exposure. This increase of tau_S is accompanied by the decrease of charge and spin diffusion coefficients, resulting in a minor change in spin relaxation length lambda_S. At high carrier density we obtain lambda_S of 7 microns, which allows for spin detection over a distance of 11 microns. After hydrogenation a value of tau_S as high as 2.7 ns is measured at room temperature.
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Submitted 11 September, 2012;
originally announced September 2012.
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Localized states influence spin transport in epitaxial graphene
Authors:
T. Maassen,
J. J. van den Berg,
E. H. Huisman,
H. Dijkstra,
F. Fromm,
T. Seyller,
B. J. van Wees
Abstract:
We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001) (MLEG). Combined with newly performed measurements on quasi-free-standing…
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We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001) (MLEG). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements in MLEG and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.
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Submitted 15 August, 2012;
originally announced August 2012.
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Spin transport in high quality suspended graphene devices
Authors:
M. H. D. Guimarães,
A. Veligura,
P. J. Zomer,
T. Maassen,
I. J. Vera-Marun,
N. Tombros,
B. J. van Wees
Abstract:
We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (τ_s ~ 150 ps) and spin relaxation length (λ_s=4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.
We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (τ_s ~ 150 ps) and spin relaxation length (λ_s=4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.
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Submitted 6 July, 2012;
originally announced July 2012.
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Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)
Authors:
T. Maassen,
J. J. van den Berg,
N. IJbema,
F. Fromm,
T. Seyller,
R. Yakimova,
B. J. van Wees
Abstract:
We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probab…
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We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer graphene, while the spin diffusion coefficient D_S is strongly reduced compared to typical results on exfoliated graphene. The increase of tau_S is probably related to the changed substrate, while the cause for the small value of D_S remains an open question.
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Submitted 14 February, 2012;
originally announced February 2012.
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Intermediate state switching dynamics in magnetic double layer nanopillars grown by molecular beam epitaxy
Authors:
N. Müsgens,
T. Maassen,
E. Maynicke,
S. Rizwan Ali,
A. Heiss,
R. Ghadimi,
J. Mayer,
G. Güntherodt,
B. Beschoten
Abstract:
We observe a stable intermediate resistance switching state in the current perpendicular to plane geometry for all Co/Cu/Co double layer nanopillar junctions grown by molecular beam epitaxy. This novel state has a resistance between the resistances of the parallel and antiparallel alignment of both Co-layer magnetizations. The state, which originates from an additional in-plane magnetic easy axis,…
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We observe a stable intermediate resistance switching state in the current perpendicular to plane geometry for all Co/Cu/Co double layer nanopillar junctions grown by molecular beam epitaxy. This novel state has a resistance between the resistances of the parallel and antiparallel alignment of both Co-layer magnetizations. The state, which originates from an additional in-plane magnetic easy axis, can be reached by spin transfer torque switching or by an external magnetic field. In addition to spin torque-induced coherent small-angle spin wave modes we observe a broad microwave emission spectrum. The latter is attributed to incoherent magnetic excitations that lead to a switching between the intermediate state and the parallel or antiparallel alignment of both ferromagnetic layers. We conclude that the additional magnetic easy axis suppresses a stable trajectory of coherent large-angle precession, which is not observed in our samples.
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Submitted 13 January, 2012;
originally announced January 2012.
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Frequency domain studies of current-induced magnetization dynamics in single magnetic-layer nanopillars
Authors:
N. Müsgens,
S. Fahrendorf,
T. Maassen,
A. Heiss,
J. Mayer,
B. Özyilmaz,
B. Beschoten,
G. Güntherodt
Abstract:
Spin transfer torque-induced high-frequency dynamics of single thin cobalt-layer nanopillars of circular and elliptical shape have been observed directly. Two types of precessional modes can be identified as a function of magnetic field perpendicular to the layer plane, excited for negative current polarity only. They are assigned to vortex-core and transverse spin-wave excitations, which corrobor…
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Spin transfer torque-induced high-frequency dynamics of single thin cobalt-layer nanopillars of circular and elliptical shape have been observed directly. Two types of precessional modes can be identified as a function of magnetic field perpendicular to the layer plane, excited for negative current polarity only. They are assigned to vortex-core and transverse spin-wave excitations, which corroborate recent model predictions. The observed narrow linewidth of 4 MHz at room temperature indicates the high coherence of the magnetic excitations.
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Submitted 11 January, 2012;
originally announced January 2012.
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Comparison between charge and spin transport in few layer graphene
Authors:
T. Maassen,
F. K. Dejene,
M. H. D. Guimarães,
C. Józsa,
B. J. van Wees
Abstract:
Transport measurements on few layer graphene (FLG) are important as they interpolate between the properties of single layer graphene (SLG) as a true 2-dimensional material and the 3-dimensional bulk properties of graphite. In this article we present 4-probe local charge transport and non-local spin valve and spin precession measurements on lateral spin field-effect transistors (FET) on FLG. We stu…
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Transport measurements on few layer graphene (FLG) are important as they interpolate between the properties of single layer graphene (SLG) as a true 2-dimensional material and the 3-dimensional bulk properties of graphite. In this article we present 4-probe local charge transport and non-local spin valve and spin precession measurements on lateral spin field-effect transistors (FET) on FLG. We study systematically the charge and spin transport properties depending on the number of layers and the electrical back gating of the device. We explain the charge transport measurements by taking the screening of scattering potentials into account and use the results to understand the spin data. The measured samples are between 3 and 20 layers thick and we include in our analysis our earlier results of the measurements on SLG for comparison. In our room temperature spin transport measurements we manage to observe spin signals over distances up to 10 u m and measure spin-relaxation times up to tau_s ~500 ps, about 4 times higher than in SLG. We calculate the density of states (DOS) of FLG using a zone-folding scheme to determine the charge diffusion coefficient D_C from the square resistance R_S. The resulting D_C and the spin diffusion coefficient D_S show similar values and depend only weakly on the number of layers and gate induced charge carriers. We discuss the implications of this on the identification of the spin-relaxation mechanism.
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Submitted 22 March, 2011; v1 submitted 2 December, 2010;
originally announced December 2010.
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Linear scaling between momentum and spin scattering in graphene
Authors:
C. Jozsa,
T. Maassen,
M. Popinciuc,
P. J. Zomer,
A. Veligura,
H. T. Jonkman,
B. J. van Wees
Abstract:
Spin transport in graphene carries the potential of a long spin diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 um. We present Hanle spin precession measurements in gated lateral spin valve devices in the low to high (up to 10^13 cm^-2) carrier density range of graphene. A linear scaling between the spin diffusion length…
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Spin transport in graphene carries the potential of a long spin diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 um. We present Hanle spin precession measurements in gated lateral spin valve devices in the low to high (up to 10^13 cm^-2) carrier density range of graphene. A linear scaling between the spin diffusion length and the diffusion coefficient is observed. We measure nearly identical spin- and charge diffusion coefficients indicating that electron-electron interactions are relatively weak and transport is limited by impurity potential scattering. When extrapolated to the maximum carrier mobilities of 2x10^5 cm^2/Vs, our results predict that a considerable increase in the spin diffusion length should be possible.
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Submitted 28 November, 2009; v1 submitted 6 October, 2009;
originally announced October 2009.
