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Commensurate-incommensurate transition for graphene on hexagonal boron nitride
Authors:
C. R. Woods,
L. Britnell,
A. Eckmann,
R. S. Ma,
J. C. Lu,
H. M. Guo,
X. Lin,
G. L. Yu,
Y. Cao,
R. V. Gorbachev,
A. V. Kretinin,
J. Park,
L. A. Ponomarenko,
M. I. Katsnelson,
Yu. N. Gornostyrev,
K. Watanabe,
T. Taniguchi,
C. Casiraghi,
H. J. Gao,
A. K. Geim,
K. S. Novoselov
Abstract:
When a crystal is subjected to a periodic potential, under certain circumstances (such as when the period of the potential is close to the crystal periodicity; the potential is strong enough, etc.) it might adjust itself to follow the periodicity of the potential, resulting in a, so called, commensurate state. Such commensurate-incommensurate transitions are ubiquitous phenomena in many areas of c…
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When a crystal is subjected to a periodic potential, under certain circumstances (such as when the period of the potential is close to the crystal periodicity; the potential is strong enough, etc.) it might adjust itself to follow the periodicity of the potential, resulting in a, so called, commensurate state. Such commensurate-incommensurate transitions are ubiquitous phenomena in many areas of condensed matter physics: from magnetism and dislocations in crystals, to vortices in superconductors, and atomic layers adsorbed on a crystalline surface. Of particular interest might be the properties of topological defects between the two commensurate phases: solitons, domain walls, and dislocation walls. Here we report a commensurate-incommensurate transition for graphene on top of hexagonal boron nitride (hBN). Depending on the rotational angle between the two hexagonal lattices, graphene can either stretch to adjust to a slightly different hBN periodicity (the commensurate state found for small rotational angles) or exhibit little adjustment (the incommensurate state). In the commensurate state, areas with matching lattice constants are separated by domain walls that accumulate the resulting strain. Such soliton-like objects present significant fundamental interest, and their presence might explain recent observations when the electronic, optical, Raman and other properties of graphene-hBN heterostructures have been notably altered.
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Submitted 20 March, 2014; v1 submitted 12 January, 2014;
originally announced January 2014.
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Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window
Authors:
E. K. Liu,
H. G. Zhang,
G. Z. Xu,
X. M. Zhang,
R. S. Ma,
W. H. Wang,
J. L. Chen,
H. W. Zhang,
G. H. Wu,
L. Feng,
X. X. Zhang
Abstract:
An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting antiferromagnetic martensite to ferromagnetic state, a 200 K Curie-temperature window was established between Curie temperatures of austenite and martensite phases…
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An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting antiferromagnetic martensite to ferromagnetic state, a 200 K Curie-temperature window was established between Curie temperatures of austenite and martensite phases. In the window, a first-order magnetostructural transition between paramagnetic austenite and ferromagnetic martensite occurs with a sharp jump in magnetization, showing a magnetic entropy change as large as -40 J kg-1 K-1 in a 50 kOe field change. This giant magnetocaloric effect enables Mn1-xCoxNiGe to become a potential magnetic refrigerant.
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Submitted 28 March, 2013;
originally announced March 2013.
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Topological Insulators in Hexagonal Wurtzite-type Binary Compounds
Authors:
X. M. Zhang,
R S. Ma,
X. C. Liu,
E. K. Liu,
G. D. Liu,
Z. Y. Liu,
W. H. Wang,
G. H. Wu
Abstract:
We propose new topological insulators in hexagonal wurtzite-type binary compounds based on the first principles calculations. It is found that two compounds AgI and AuI are three-dimensional topological insulators with a naturally opened band-gap at Fermi level. From band inversion mechanism point view, this new family of topological insulators is similar with HgTe, which has s (Gamma 6) - p (Gamm…
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We propose new topological insulators in hexagonal wurtzite-type binary compounds based on the first principles calculations. It is found that two compounds AgI and AuI are three-dimensional topological insulators with a naturally opened band-gap at Fermi level. From band inversion mechanism point view, this new family of topological insulators is similar with HgTe, which has s (Gamma 6) - p (Gamma 8) band inversion. Our results strongly support that the spin-orbit coupling is not an essential factor to the band inversion mechanism; on the contrary, it is mainly responsible to the formation of a global band gap for the studied topological insulators. We further theoretically explore the feasibility of tuning the topological order of the studied compounds with two types of strains. The results show that the uniaxial strain can contribute extremely drastic impacts to the band inversion behavior, which provide an effective approach to induce topological phase transition.
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Submitted 28 March, 2013;
originally announced March 2013.
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Structure and magnetic properties of Heusler alloy Fe2NiZ (Z=Al, Ga, Si and Ge)
Authors:
Y. J. Zhang,
W. H. Wang,
H. G. Zhang,
E. K. Liu,
R. S. Ma,
G. H. Wu
Abstract:
The Heusler alloys Fe2NiZ (Z=Al, Ga, Si and Ge) have been synthesized and investigated focusing on the phase stability and the magnetic properties. The experimental and theoretical results reveal the covalent bonding originated from p-d hybridization takes an important role in these alloys, which dominates the stability of ordered structure but leads to the decline of the band splitting. The elect…
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The Heusler alloys Fe2NiZ (Z=Al, Ga, Si and Ge) have been synthesized and investigated focusing on the phase stability and the magnetic properties. The experimental and theoretical results reveal the covalent bonding originated from p-d hybridization takes an important role in these alloys, which dominates the stability of ordered structure but leads to the decline of the band splitting. The electronic structure shows the IV group main group element (Si and Ge) provides stronger covalent effect than that of the III group element (Al and Ga). It has been found that the variations of the physical parameters, lattice constants, critical ordering temperature, magnetic moments and Curie temperature, precisely follow these covalent characters.
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Submitted 30 January, 2013;
originally announced January 2013.
