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Strong paramagnetic response in Y containing V$_{0.6}$Ti$_{0.4}$ superconductor
Authors:
SK Ramjan,
LS Sharath Chandra,
Rashmi Singh,
MK Chattopadhyay
Abstract:
We report here, the systematic field-cooled (FC) magnetisation of superconducting (V$_{0.6}$Ti$_{0.4}$)-Y alloys in presence of applied magnetic fields upto 7 T. Paramagnetic response is clearly observed just below the superconducting transition temperature (T$_{c}$) in low fields ($\leq$0.2 T). The lower T$_{c}$ of the Y-rich precipitates as compared to the bulk, is the origin of flux compression…
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We report here, the systematic field-cooled (FC) magnetisation of superconducting (V$_{0.6}$Ti$_{0.4}$)-Y alloys in presence of applied magnetic fields upto 7 T. Paramagnetic response is clearly observed just below the superconducting transition temperature (T$_{c}$) in low fields ($\leq$0.2 T). The lower T$_{c}$ of the Y-rich precipitates as compared to the bulk, is the origin of flux compression and this leads to paramagnetic response. It is also observed that the magnetisation obtained during field cooled (FC) cooling cycle is lower than that of FC warming, for all the alloys in the field range 0.02-7 T. In addition, paramagnetic relaxation of FC moment is observed. We identify that these features of Y containing alloys are related to the high field paramagnetic Meissner effect (HFPME). Our analysis shows that the large difference in pinning strength of the different pinning centres generated due to Y addition to V$_{0.6}$Ti$_{0.4}$ alloy, is responsible for the observed effect. We provide further evidence to our claim in the form of extension of range in temperature and magnetic fields over which HFPME is observed when samples are subjected to cold work.
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Submitted 13 October, 2021; v1 submitted 12 October, 2021;
originally announced October 2021.
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Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer
Authors:
Mattias Kruskopf,
Klaus Pierz,
Davood Momeni Pakdehi,
Stefan Wundrack,
Rainer Stosch,
Andrey Bakin,
Hans W. Schumacher
Abstract:
We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the origin of undesirably high step edges in excellent agreement with the predictions of a general model of step dynamics. The applied polymer-assisted sublimation grow…
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We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the origin of undesirably high step edges in excellent agreement with the predictions of a general model of step dynamics. The applied polymer-assisted sublimation growth method demonstrates that the key principle to suppress this behavior is the uniform nucleation of the buffer layer. In this way, the silicon carbide surface is stabilized such that ultra-flat surfaces can be conserved during graphene growth on a large variety of silicon carbide substrate surfaces. The analysis of the experimental results describes different growth modes which extend the current understanding of epitaxial graphene growth by emphasizing the importance of buffer layer nucleation and critical mass transport processes.
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Submitted 10 July, 2017; v1 submitted 26 April, 2017;
originally announced April 2017.
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Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
Authors:
Mattias Kruskopf,
Davood Momeni Pakdehi,
Klaus Pierz,
Stefan Wundrack,
Rainer Stosch,
Thorsten Dziomba,
Martin Goetz,
Jens Baringhaus,
Johannes Aprojanz,
Christoph Tegenkamp,
Jakob Lidzba,
Thomas Seyller,
Frank Hohls,
Franz J. Ahlers,
Hans W. Schumacher
Abstract:
We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation…
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We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of polymer adsorbates which act as a carbon source. With most of the steps well below 0.75 nm pure monolayer graphene without bilayer inclusions is formed with lateral dimensions only limited by the size of the substrate. This makes the polymer assisted sublimation growth technique the most promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K with until now unreached precision and high electron mobilities on mm scale devices.
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Submitted 6 June, 2016;
originally announced June 2016.
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Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
Authors:
Mattias Kruskopf,
Klaus Pierz,
Stefan Wundrack,
Rainer Stosch,
Thorsten Dziomba,
Cay-Christian Kalmbach,
André Müller,
Jens Baringhaus,
Christoph Tegenkamp,
Franz J. Ahlers,
Hans W. Schumacher
Abstract:
The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0001) substrates. It turns out that the…
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The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0001) substrates. It turns out that the often used hydrogen etching of the substrate is responsible for undesirable high macro steps evolving during graphene growth. A more advantageous type of sub-nanometer stepped graphene layers is obtained with a new method: a high-temperature conditioning of the SiC surface in argon atmosphere. The results can be explained by the observed graphene buffer layer domains after the conditioning process which suppress giant step bunching and graphene step flow growth. The superior electronic quality is demonstrated by a less extrinsic resistance anisotropy obtained in nano-probe transport experiments and by the excellent quantization of the Hall resistance in low-temperature magneto-transport measurements. The quantum Hall resistance agrees with the nominal value (half of the von Klitzing constant) within a standard deviation of 4.5*10(-9) which qualifies this method for the fabrication of electrical quantum standards.
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Submitted 27 April, 2015; v1 submitted 13 February, 2015;
originally announced February 2015.
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Molecular dynamics simulations of noble gas release from endohedral fullerene clusters
Authors:
M. K. Balasubramanya,
M. W. Roth,
P. D. Tilton,
B. A. Suchy
Abstract:
We report the results of molecular dynamics simulations of the release of five species of noble gas atoms trapped inside a small cluster of fullerenes in the temperature range 4000K < T < 5000K. We find that larger noble gas atoms are generally released at a slower rate and that helium is released considerably more rapidly than any of the other noble gases. The differing release rates are due no…
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We report the results of molecular dynamics simulations of the release of five species of noble gas atoms trapped inside a small cluster of fullerenes in the temperature range 4000K < T < 5000K. We find that larger noble gas atoms are generally released at a slower rate and that helium is released considerably more rapidly than any of the other noble gases. The differing release rates are due not only to the differences in the size and mass of a given endohedral species but also because larger trapped atoms tend to stabilize the fullerene cage against thermal fluctuations. Unlike with the case of atoms entering fullerenes, we find that any atom escaping from the cage results in a window which does not close. Escape rate constants are reported and comparisons with experiment are discussed.
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Submitted 20 July, 2006;
originally announced July 2006.
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Simulated Dynamics and Endohedral Relesase of Ne from Ne@C60 Clusters
Authors:
P. Tilton,
B. Suchy,
M. K. Balasubramanya,
M. W. Roth
Abstract:
Molecular Dynamics (MD) computer simulations are utilized to better understand the escape of neon from small (N=5) endohedral Ne@C60 clusters. Multiple runs at various temperatures are used to increase the reliability of our statistics. The cluster holds together until somewhere between T = 1150K and T = 1200K, where it dissociates, showing no intermediate sign of melting or fullerene disintegra…
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Molecular Dynamics (MD) computer simulations are utilized to better understand the escape of neon from small (N=5) endohedral Ne@C60 clusters. Multiple runs at various temperatures are used to increase the reliability of our statistics. The cluster holds together until somewhere between T = 1150K and T = 1200K, where it dissociates, showing no intermediate sign of melting or fullerene disintegration. When the temperature is increased to around T = 4000K, the encapsulated neon atoms begin to leave the cluster, with the fullerene molecules still remaining intact. At temperatures near T = 4400K, thermal disintegration of the fullerenes pre-empts the cluster dissociation. The neon atoms are then more quickly released and the fullerenes form a larger connected structure, with bonding taking place in atom pairs from different original fullerene molecules. Escape constants and half lives are calculated for the temperature range 4000K < T < 5000K. The agreements and disagreements of results of this work with experiments suggest that classical MD simulations are useful in describing fullerene systems at low temperatures and near disintegration, but require more thought and modification before accurately modeling windowing at temperatures below T = 3000K.
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Submitted 29 December, 2005;
originally announced December 2005.
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Control and Detection of Singlet-Triplet Mixing in a Random Nuclear Field
Authors:
F. H. L. Koppens,
J. A. Folk,
J. M. Elzerman,
R. Hanson,
L. H. Willems van Beveren,
I. T. Vink,
H. P. Tranitz,
W. Wegscheider,
L. P. Kouwenhoven,
L. M. K. Vandersypen
Abstract:
We observe mixing between two-electron singlet and triplet states in a double quantum dot, caused by interactions with nuclear spins in the host semiconductor. This mixing is suppressed by applying a small magnetic field, or by increasing the interdot tunnel coupling and thereby the singlet-triplet splitting. Electron transport involving transitions between triplets and singlets in turn polarize…
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We observe mixing between two-electron singlet and triplet states in a double quantum dot, caused by interactions with nuclear spins in the host semiconductor. This mixing is suppressed by applying a small magnetic field, or by increasing the interdot tunnel coupling and thereby the singlet-triplet splitting. Electron transport involving transitions between triplets and singlets in turn polarizes the nuclei, resulting in striking bistabilities. We extract from the fluctuating nuclear field a limitation on the time-averaged spin coherence time T2* of 25 ns. Control of the electron-nuclear interaction will therefore be crucial for the coherent manipulation of individual electron spins.
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Submitted 2 September, 2005;
originally announced September 2005.
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Real-time detection of single electron tunneling using a quantum point contact
Authors:
L. M. K. Vandersypen,
J. M. Elzerman,
R. N. Schouten,
L. H. Willems van Beveren,
R. Hanson,
L. P. Kouwenhoven
Abstract:
We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by about 1% if the number of electrons on the dot changes by one. The QPC is voltage biased and the current is monitored with an IV-convertor at room temperature. W…
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We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by about 1% if the number of electrons on the dot changes by one. The QPC is voltage biased and the current is monitored with an IV-convertor at room temperature. We can resolve tunnel events separated by only 8 $μ$s, limited by noise from the IV-convertor. Shot noise in the QPC sets a 25 ns lower bound on the accessible timescales.
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Submitted 6 July, 2004;
originally announced July 2004.
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Quantum Computing with Electron Spins in Quantum Dots
Authors:
L. M. K. Vandersypen,
R. Hanson,
L. H. Willems van Beveren,
J. M. Elzerman,
J. S. Greidanus,
S. De Franceschi,
L. P. Kouwenhoven
Abstract:
We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable spin-polarization. Read-out hinges on spin-to-charge conversion via spin-selective tunneling to or from the leads, followed by measurement of the number of elect…
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We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable spin-polarization. Read-out hinges on spin-to-charge conversion via spin-selective tunneling to or from the leads, followed by measurement of the number of electron charges on the dot via a charge detector. Single-qubit manipulation relies on a microfabricated wire located close to the quantum dot, and two-qubit interactions are controlled via the tunnel barrier connecting the respective quantum dots. Based on these ideas, we have begun a series of experiments in order to demonstrate unitary control and to measure the coherence time of individual electron spins in quantum dots.
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Submitted 10 July, 2002;
originally announced July 2002.
