Versatile Top-Down Patterning of 3D, 2D and 0D Perovskites for On-Chip Integration
Authors:
Federico Fabrizi,
Saeed Goudarzi,
Sana Khan,
Tauheed Mohammad,
Liudmila Starodubtceva,
Piotr J. Cegielski,
Gerhard Müller-Newen,
Surendra B. Anantharaman,
Maryam Mohammadi,
Max C. Lemme
Abstract:
Metal-halide perovskites (MHPs) have exciting optoelectronic properties and are under investigation for various applications, such as photovoltaics, light-emitting diodes, and lasers. An essential step toward exploiting the full potential of this class of materials is their large-scale, on-chip integration with high-resolution, top-down patterning. The development of such patterning methods for pe…
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Metal-halide perovskites (MHPs) have exciting optoelectronic properties and are under investigation for various applications, such as photovoltaics, light-emitting diodes, and lasers. An essential step toward exploiting the full potential of this class of materials is their large-scale, on-chip integration with high-resolution, top-down patterning. The development of such patterning methods for perovskite films is challenging because of their ionic behavior and adverse reactions with the solvents used in standard lithography processes. Here, we introduce a versatile and precise method comprising photolithography and reactive ion etching (RIE) processes that can be tuned to accommodate different perovskite compositions and morphologies, including 3D, quasi-2D, and quasi-0D structures. Our method utilizes conventional photoresists at reduced temperatures to create micron-sized features down to 1 $μ$m, providing high reproducibility from chip to chip. The patterning technique is validated through atomic force microscopy (AFM), X-ray diffraction (XRD), optical spectroscopy, and scanning electron microscopy (SEM). It enables the scalable and high-throughput on-chip monolithic integration of MHPs.
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Submitted 22 November, 2024;
originally announced November 2024.
