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Optimizing Time-resolved Magneto-optical Kerr Effect for High-fidelity Magnetic Characterization
Authors:
Yun Kim,
Dingbin Huang,
Deyuan Lyu,
Haoyue Sun,
Jian-Ping Wang,
Paul A. Crowell,
Xiaojia Wang
Abstract:
Spintronics has emerged as a key technology for fast and non-volatile memory with great CMOS compatibility. As the building blocks for these cutting-edge devices, magnetic materials require precise characterization of their critical properties, such as the effective anisotropy field ($H_{\rm{k,eff}}$, related to magnetic stability) and damping ($α$ key factor in device energy efficiency). Accurate…
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Spintronics has emerged as a key technology for fast and non-volatile memory with great CMOS compatibility. As the building blocks for these cutting-edge devices, magnetic materials require precise characterization of their critical properties, such as the effective anisotropy field ($H_{\rm{k,eff}}$, related to magnetic stability) and damping ($α$ key factor in device energy efficiency). Accurate measurements of these properties are essential for designing and fabricating high-performance spintronic devices. Among advanced metrology techniques, Time-resolved Magneto-Optical Kerr Effect (TR-MOKE) stands out for its superb temporal and spatial resolutions, surpassing traditional methods like ferromagnetic resonance (FMR). However, the full potential of TR-MOKE has not yet been fully pledged due to the lack of systematic optimization and robust operational guidelines. In this study, we address this gap by developing experimentally validated guidelines for optimizing TR-MOKE metrology across materials with perpendicular magnetic anisotropy (PMA) and in-plane magnetic anisotropy (IMA). Our work identifies the optimal ranges of the field angle to simultaneously achieve high signal amplitudes and improve measurement sensitivities to $H_{\rm{k,eff}}$ and $α$. By suppressing the influence of inhomogeneities and boosting sensitivity, our work significantly enhances TR-MOKE capability to extract magnetic properties with high accuracy and reliability. This optimization framework positions TR-MOKE as an indispensable tool for advancing spintronics, paving the way for energy-efficient and high-speed devices that will redefine the landscape of modern computing and memory technologies.
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Submitted 19 June, 2025;
originally announced June 2025.
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Anomalous vortex Hall effect in a ferromagnet/superconductor heterostructure
Authors:
Weideng Sun,
Przemyslaw Swatek,
Yihong Fan,
Hwanhui Yun,
Deyuan Lyu,
K. Andre Mkhoyan,
Jian-Ping Wang,
Gang Qiu
Abstract:
The coexistence of superconductivity and ferromagnetism is a fascinating and complex phenomenon in condensed matter physics, as these two states are typically mutually exclusive due to their competing spin configurations. However, the interplay between these two orders through the proximity effect has been a subject of intense research as it opens up possibilities for novel technological applicati…
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The coexistence of superconductivity and ferromagnetism is a fascinating and complex phenomenon in condensed matter physics, as these two states are typically mutually exclusive due to their competing spin configurations. However, the interplay between these two orders through the proximity effect has been a subject of intense research as it opens up possibilities for novel technological applications. Here, we report the coexistence of superconductivity and ferromagnetism in superconducting δ-TaN/ferromagnetic CoFeB heterostructures grown by facing-target sputtering. Superconducting states are comprehensively investigated, with evidence of strong correlation between the superconducting and ferromagnetic order parameters. In particular, we observed an anomalous Hall signal without the presence of the magnetic field in the mixed state of the superconducting transition near the critical temperature. Systematic characterizations of the Hall resistance under varying temperatures and magnetic fields attribute this behavior to the vortex Hall effect (VHE), whereby superconducting vortices in the mixed state undergo transverse motions near the critical temperature. Unlike previously reported VHEs in conventional type-II superconductors, the anomalous VHE in TaN is induced by the stray field in the underlying CoFeB layers. The concurrency of strong spin-orbit coupling, the superconductivity in the TaN layer, and the highly spin-polarized ferromagnetic ordering in the CoFeB layer offers new insights into proximity-induced vortex dynamics and the design of novel superconducting spintronic devices.
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Submitted 3 April, 2025;
originally announced April 2025.
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Fast spin precession and strong perpendicular magnetic anisotropy in ferrimagnetic Mn4N thin films improved by Pd buffer layer
Authors:
Yao Zhang,
Yun Kim,
Peter P. Murmu,
Dingbin Huang,
Deyuan Lyu,
Jian-Ping Wang,
Xiaojia Wang,
Simon Granville
Abstract:
Ferrimagnets take the advantages of both ferromagnets and antiferromagnets making them promise for spintronic applications. Here we prepared ferrimagnetic Mn4N thin films with high Curie temperature and investigated the crystalline structure and magnetic properties affected by the Pd buffer layer. We demonstrated that both crystalline quality and perpendicular magnetic anisotropy (PMA) of Mn4N thi…
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Ferrimagnets take the advantages of both ferromagnets and antiferromagnets making them promise for spintronic applications. Here we prepared ferrimagnetic Mn4N thin films with high Curie temperature and investigated the crystalline structure and magnetic properties affected by the Pd buffer layer. We demonstrated that both crystalline quality and perpendicular magnetic anisotropy (PMA) of Mn4N thin films are enhanced significantly due to the relaxation of tensile stress induced by the Pd buffer layer. We also demonstrated a fast spin precession at room temperature, almost 100 GHz, in Mn4N thin films. With the characteristics of high thermal stability, enhanced PMA by buffer layer and fast spin precession, Mn4N thin film is a promising material for spintronic applications.
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Submitted 19 February, 2025;
originally announced February 2025.
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Energy Efficient Stochastic Signal Manipulation in Superparamagnetic Tunnel Junctions via Voltage-Controlled Exchange Coupling
Authors:
Qi Jia,
Onri J. Benally,
Brandon Zink,
Delin Zhang,
Yang Lv,
Shuang Liang,
Deyuan Lyu,
Yu-Chia Chen,
Yifei Yang,
Yu Han Huang,
Jian-Ping Wang
Abstract:
Superparamagnetic tunnel junctions (sMTJs) are emerging as promising components for stochastic units in neuromorphic computing, owing to their tunable random switching behavior. Conventional MTJ control methods, such as spin-transfer torque (STT) and spin-orbit torque (SOT), often require substantial power. Here, we introduce the voltage-controlled exchange coupling (VCEC) mechanism, enabling swit…
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Superparamagnetic tunnel junctions (sMTJs) are emerging as promising components for stochastic units in neuromorphic computing, owing to their tunable random switching behavior. Conventional MTJ control methods, such as spin-transfer torque (STT) and spin-orbit torque (SOT), often require substantial power. Here, we introduce the voltage-controlled exchange coupling (VCEC) mechanism, enabling switching between antiparallel and parallel states in sMTJs with an ultralow power consumption of only 40 nW, approximately two orders of magnitude lower than conventional STT-based sMTJs. This mechanism yields a sigmoid-shaped output response, making it ideally suited for neuromorphic computing applications. Furthermore, we validate the feasibility of integrating VCEC with the SOT current control, offering an additional dimension for magnetic state manipulation. This work marks the first practical demonstration of VCEC effect in sMTJs, highlighting its potential as a low-power control solution for probabilistic bits in advanced computing systems.
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Submitted 9 December, 2024;
originally announced December 2024.
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Giant spin Hall effect with multi-directional spin components in Ni4W
Authors:
Yifei Yang,
Seungjun Lee,
Yu-Chia Chen,
Qi Jia,
Duarte Sousa,
Michael Odlyzko,
Javier Garcia-Barriocanal,
Guichuan Yu,
Greg Haugstad,
Yihong Fan,
Yu-Han Huang,
Deyuan Lyu,
Zach Cresswell,
Tony Low,
Jian-Ping Wang
Abstract:
Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into the ferromagnet from the underlying SOT layer for conventional SOT materials such as heavy metals and topological materials. Through the use of materials with lo…
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Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into the ferromagnet from the underlying SOT layer for conventional SOT materials such as heavy metals and topological materials. Through the use of materials with low symmetries, or other symmetry breaking approaches, unconventional spin currents with out-of-plane polarization has been demonstrated and enabled field-free deterministic switching of perpendicular magnetization. Despite this progress, the SOT efficiency of these materials has typically remained low. Here, we report a giant SOT efficiency of 0.85 in sputtered Ni4W/CoFeB heterostructure at room temperature, as evaluated by second harmonic Hall measurements. In addition, due to the low crystal symmetry of Ni4W, unconventional out-of-plane and Dresselhaus-like spin components were observed. Macro-spin simulation suggests our spin Hall tensor to provide about an order of magnitude improvement in the magnetization switching efficiency, thus broadening the path towards energy efficient spintronic devices using low-symmetry materials.
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Submitted 8 November, 2024;
originally announced November 2024.
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Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN
Authors:
Przemyslaw Wojciech Swatek,
Xudong Hang,
Yihong Fan,
Wei Jiang,
Hwanhui Yun,
Deyuan Lyu,
Delin Zhang,
Thomas J. Peterson,
Protyush Sahu,
Onri Jay Benally,
Zach Cresswell,
Jinming Liu,
Rabindra Pahari,
Daniel Kukla,
Tony Low,
K. Andre Mkhoyan,
Jian-Ping Wang
Abstract:
In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pumping measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 la…
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In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pumping measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 layer attributed to the charge-to-spin conversion generated from the $δ-$TaN layer. Remarkably, the spin-torque efficiency determined from ST-FMR and spin pumping measurements is as large as $Θ =$ 0.034 and 0.031, respectively. These values are over two times larger than for $α-$Ta, but almost five times lower than for $β-$Ta, which can be attributed to the low room temperature electrical resistivity $\sim 74μΩ$ cm in $δ-$TaN. A large spin diffusion length of at least $\sim8$ nm is estimated, which is comparable to the spin diffusion length in pure Ta. Comprehensive experimental analysis, together with density functional theory calculations, indicates that the origin of the pronounced SOT effect in $δ-$TaN can be mostly related to a significant contribution from the Berry curvature associated with the presence of a topically nontrivial electronic band structure in the vicinity of the Fermi level (EF). Through additional detailed theoretical analysis, we also found that an isostructural allotrope of the superconducting $δ-$TaN phase, the simple hexagonal structure, $θ-$TaN, has larger Berry curvature, and that, together with expected reasonable charge conductivity, it can also be a promising candidate for exploring a generation of spin-orbit torque magnetic random access memory as cheap, temperature stable, and highly efficient spin current sources.
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Submitted 29 July, 2022; v1 submitted 18 July, 2022;
originally announced July 2022.
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Bipolar electric field switching of perpendicular magnetic tunnel junctions through voltage controlled exchange coupling
Authors:
Delin Zhang,
Mukund Bapna,
Wei Jiang,
Duarte Pereira de Sousa,
Yu-Ching Liao,
Zhengyang Zhao,
Yang Lv,
Protyush Sahu,
Deyuan Lyu,
Azad Naeemi,
Tony Low,
Sara A Majetich,
Jian-Ping Wang
Abstract:
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier of ferromagnetic layer via electric field effect and efficiently switches p-MTJs only with a unipolar behavior. Here we demonstrate a bipolar electric field eff…
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Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier of ferromagnetic layer via electric field effect and efficiently switches p-MTJs only with a unipolar behavior. Here we demonstrate a bipolar electric field effect switching of 100-nm p-MTJs with a synthetic antiferromagnetic free layer through voltage-controlled exchange coupling (VCEC). The switching current density, ~1.1x10^5 A/cm^2, is one order of magnitude lower than that of the best-reported spin-transfer torque devices. Theoretical results suggest that electric field induces a ferromagnetic-antiferromagnetic exchange coupling transition of the synthetic antiferromagnetic free layer and generates a field-like interlayer exchange coupling torque, which cause the bidirectional magnetization switching of p-MTJs. A preliminary benchmarking simulation estimates that VCEC dissipates an order of magnitude lower writing energy compared to spin-transfer torque at the 15-nm technology node. These results could eliminate the major obstacle in the development of spin memory devices beyond their embedded applications.
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Submitted 6 September, 2021; v1 submitted 21 December, 2019;
originally announced December 2019.
