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Artificial neural network interatomic potential for dislocation and fracture properties of Molybdenum
Authors:
Masud Alam,
Liverios Lymperakis
Abstract:
A high dimensional artificial neural network interatomic potential for Mo is developed. To train and validate the potential density functional theory calculations on structures and properties that correlate to fracture, such as elastic constants, surface energies, generalized stacking fault energies, and surface decohesion energies, have been employed. The potential provides total energies with a…
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A high dimensional artificial neural network interatomic potential for Mo is developed. To train and validate the potential density functional theory calculations on structures and properties that correlate to fracture, such as elastic constants, surface energies, generalized stacking fault energies, and surface decohesion energies, have been employed. The potential provides total energies with a root mean square error less than 5\;meV per atom both in the training and validation data sets. The potential was applied to investigate screw dislocation core properties as well as to conduct large scale fracture simulations. These calculations revealed that the 1/2$\langle111\rangle$ screw dislocation core is non-degenerate and symmetric and mode I fracture is brittle. It is anticipated that the thus constructed potential is well suited to be applied in large scale atomistic calculations of plasticity and fracture.
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Submitted 8 December, 2021;
originally announced December 2021.
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Al$_{5+α}$Si$_{5+δ}$N$_{12}$, a new Nitride compound
Authors:
R. Dagher,
L. Lymperakis,
V. Delaye,
L. Largeau,
A. Michon,
J Brault,
P. Vennegues
Abstract:
We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350$^\circ$C and 1550$^\circ$C. The structure and stoichiometry of this compound are investigated by high-resolution scanning transmission electron microscopy (HRSTEM), energy dispersive X-Ray (EDX) spectroscopy, and density functional theory (DFT…
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We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350$^\circ$C and 1550$^\circ$C. The structure and stoichiometry of this compound are investigated by high-resolution scanning transmission electron microscopy (HRSTEM), energy dispersive X-Ray (EDX) spectroscopy, and density functional theory (DFT) calculations. The identified structure is a derivative of the parent wurtzite AlN crystal where anion sublattice is fully occupied by N atoms and the cation sublattice is the stacking of 2 different planes along <0001>. The first one exhibits a $\times$3 periodicity along <10-10> with 1/3 of the sites being vacant. The rest of the sites in the cation sublattice are occupied by equal number of Si and Al atoms. Assuming a semiconducting alloy, which is expected to have a wide band gap, a range of stoichiometries is proposed, Al$_{5+α}$Si$_{5+δ}$N$_{12}$, with $α$ being between 0 and 1/3 and $δ$ between 0 and 1/4.
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Submitted 22 March, 2019;
originally announced March 2019.
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Adsorption and desorption of hydrogen at nonpolar GaN(1-100) surfaces: Kinetics and impact on surface vibrational and electronic properties
Authors:
L. Lymperakis,
J. Neugebauer,
M. Himmerlich,
S. Krischok,
M. Rink,
J. Kröger,
V. M. Polyakov
Abstract:
The adsorption of hydrogen at nonpolar GaN(1-100) surfaces and its impact on the electronic and vibrational properties is investigated using surface electron spectroscopy in combination with density functional theory (DFT) calculations. For the surface mediated dissociation of H2 and the subsequent adsorption of H, an energy barrier of 0.55 eV has to be overcome. The calculated kinetic surface pha…
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The adsorption of hydrogen at nonpolar GaN(1-100) surfaces and its impact on the electronic and vibrational properties is investigated using surface electron spectroscopy in combination with density functional theory (DFT) calculations. For the surface mediated dissociation of H2 and the subsequent adsorption of H, an energy barrier of 0.55 eV has to be overcome. The calculated kinetic surface phase diagram indicates that the reaction is kinetically hindered at low pressures and low temperatures. At higher temperatures ab-initio thermodynamics show, that the H-free surface is energetically favored. To validate these theoretical predictions experiments at room temperature and under ultrahigh vacuum conditions were performed. They reveal that molecular hydrogen does not dissociatively adsorb at the GaN(1-100) surface. Only activated atomic hydrogen atoms attach to the surface. At temperatures above 820 K, the attached hydrogen gets desorbed. The adsorbed hydrogen atoms saturate the dangling bonds of the gallium and nitrogen surface atoms and result in an inversion of the Ga-N surface dimer buckling. The signatures of the Ga-H and N-H vibrational modes on the H-covered surface have experimentally been identified and are in good agreement with the DFT calculations of the surface phonon modes. Both theory and experiment show that H adsorption results in a removal of occupied and unoccupied intragap electron states of the clean GaN(1-100) surface and a reduction of the surface upward band bending by 0.4 eV. The latter mechanism largely reduces surface electron depletion.
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Submitted 2 February, 2017;
originally announced February 2017.
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Gallium adsorption on (0001) GaN surfaces
Authors:
C. Adelmann,
J. Brault,
G. Mula,
B. Daudin,
L. Lymperakis,
J. Neugebauer
Abstract:
We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function o…
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We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the impinging Ga flux. The temperature dependence is discussed within an {\em ab initio} based growth model for adsorption taking into account the nucleation of Ga clusters.
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Submitted 7 April, 2003;
originally announced April 2003.
