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Large spin-orbit torque in a-plane $α$-Fe$_{2}$O$_{3}$/Pt bilayers
Authors:
Igor Lyalin,
Hantao Zhang,
Justin Michel,
Daniel Russell,
Fengyuan Yang,
Ran Cheng,
Roland K. Kawakami
Abstract:
Realization of efficient spin-orbit torque switching of the Néel vector in insulating antiferromagnets is a challenge, often complicated by spurious effects. Quantifying the spin-orbit torques in antiferromagnet/heavy metal heterostructures is an important first step towards this goal. Here, we employ magneto-optic techniques to study damping-like spin-orbit torque (DL-SOT) in a-plane $α$-Fe$_2$O…
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Realization of efficient spin-orbit torque switching of the Néel vector in insulating antiferromagnets is a challenge, often complicated by spurious effects. Quantifying the spin-orbit torques in antiferromagnet/heavy metal heterostructures is an important first step towards this goal. Here, we employ magneto-optic techniques to study damping-like spin-orbit torque (DL-SOT) in a-plane $α$-Fe$_2$O$_3$ (hematite) with a Pt spin-orbit overlayer. We find that the DL-SOT efficiency is two orders of magnitude larger than reported in c- and r-plane hematite/Pt using harmonic Hall techniques. The large magnitude of DL-SOT is supported by direct imaging of current-induced motion of antiferromagnetic domains that happens at moderate current densities. Our study introduces a new method for quantifying spin-orbit torque in antiferromagnets with a small canted moment and identifies a-plane $α$-Fe$_2$O$_3$ as a promising candidate to realize efficient SOT switching.
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Submitted 10 July, 2024;
originally announced July 2024.
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Interface transparency to orbital current
Authors:
Igor Lyalin,
Roland K. Kawakami
Abstract:
The transport of spin currents across interfaces is relatively well studied, while the transport properties of orbital currents are just starting to be examined. In Cr/Ni bilayers, the spin-orbit torque (SOT) due to the orbital current generated in the Cr layer is believed to dominate over torques of other origins. In this work, we study SOT in Cr/X/Ni trilayers, where X is an ultra-thin spacer of…
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The transport of spin currents across interfaces is relatively well studied, while the transport properties of orbital currents are just starting to be examined. In Cr/Ni bilayers, the spin-orbit torque (SOT) due to the orbital current generated in the Cr layer is believed to dominate over torques of other origins. In this work, we study SOT in Cr/X/Ni trilayers, where X is an ultra-thin spacer of a different material. Using the SOT as a proxy for the orbital current transferred from the Cr to the Ni layer, we compare Cr/X/Ni results to Pt/X/Ni, the system in which spin current generated in the Pt layer plays a dominant role. We find that across 12 different spacers the apparent interface transparency to the orbital current is comparable or larger than to the spin current.
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Submitted 3 June, 2024;
originally announced June 2024.
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Atomic Layer Molecular Beam Epitaxy of Kagome Magnet RMn$_6$Sn$_6$ (R = Er, Tb) Thin Films
Authors:
Shuyu Cheng,
Igor Lyalin,
Wenyi Zhou,
Roland K. Kawakami
Abstract:
Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn$_6$Sn$_6$ (R = rare earth) compounds are particularly interesting because of the existence of large intrinsic anomalous Hall effect (AHE) which originates from the gapped Dirac cones near the Fermi level. This makes RMn$_6$Sn$_6$ an outstanding candidate for r…
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Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn$_6$Sn$_6$ (R = rare earth) compounds are particularly interesting because of the existence of large intrinsic anomalous Hall effect (AHE) which originates from the gapped Dirac cones near the Fermi level. This makes RMn$_6$Sn$_6$ an outstanding candidate for realizing the high-temperature quantum anomalous Hall effect. The growth of RMn$_6$Sn$_6$ thin films is beneficial for both fundamental research and potential applications. However, most of the studies on RMn$_6$Sn$_6$ have focused on bulk crystals so far, and the synthesis of RMn$_6$Sn$_6$ thin films has not been reported so far. Here we report the atomic layer molecular beam epitaxy growth, structural and magnetic characterizations, and transport properties of ErMn$_6$Sn$_6$ and TbMn$_6$Sn$_6$ thin films. It is especially noteworthy that TbMn$_6$Sn$_6$ thin films have out-of-plane magnetic anisotropy, which is important for realizing the quantum anomalous Hall effect. Our work paves the avenue toward the control of the AHE using devices patterned from RMn$_6$Sn$_6$ thin films.
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Submitted 9 January, 2024;
originally announced January 2024.
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Tuning the Curie temperature of a 2D magnet/topological insulator heterostructure to above room temperature by epitaxial growth
Authors:
Wenyi Zhou,
Alexander J. Bishop,
Xiyue S. Zhang,
Katherine Robinson,
Igor Lyalin,
Ziling Li,
Ryan Bailey-Crandell,
Thow Min Jerald Cham,
Shuyu Cheng,
Yunqiu Kelly Luo,
Daniel C. Ralph,
David A. Muller,
Roland K. Kawakami
Abstract:
Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize th…
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Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize their magnetic ordering to higher temperatures. In this work, we utilize molecular beam epitaxy to systematically tune the Curie temperature ($T_C$) in thin film Fe$_3$GeTe$_2$/Bi$_2$Te$_3$ from bulk-like values ($\sim$220 K) to above room temperature by increasing the growth temperature from 300 $^\circ$C to 375 $^\circ$C. For samples grown at 375 $^\circ$C, cross-sectional scanning transmission electron microscopy (STEM) reveals the spontaneous formation of different Fe$_m$Ge$_n$Te$_2$ compositions (e.g. Fe$_5$Ge$_2$Te$_2$ and Fe$_7$Ge$_6$Te$_2$) as well as intercalation in the vdW gaps, which are possible origins of the enhanced Curie temperature. This observation paves the way for developing various Fe$_m$Ge$_n$Te$_2$/TI heterostructures with novel properties.
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Submitted 25 August, 2023;
originally announced August 2023.
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Epitaxial Kagome Thin Films as a Platform for Topological Flat Bands
Authors:
Shuyu Cheng,
M. Nrisimhamurty,
Tong Zhou,
Nuria Bagues,
Wenyi Zhou,
Alexander J. Bishop,
Igor Lyalin,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
David W. McComb,
Igor Zutic,
Roland K. Kawakami
Abstract:
Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi l…
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Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi level via electrostatic gating or strain. Here we report the band structures of epitaxial CoSn thin films grown directly on insulating substrates. Flat bands are observed using synchrotron-based angle-resolved photoemission spectroscopy (ARPES). The band structure is consistent with density functional theory (DFT) calculations, and the transport properties are quantitatively explained by the band structure and semiclassical transport theory. Our work paves the way to realize flat band-induced phenomena through fine-tuning of flat bands in kagome materials.
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Submitted 28 July, 2023;
originally announced July 2023.
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Magneto-Optical Detection of the Orbital Hall Effect in Chromium
Authors:
Igor Lyalin,
Sanaz Alikhah,
Marco Berritta,
Peter M. Oppeneer,
Roland K. Kawakami
Abstract:
The orbital Hall effect has been theoretically predicted but its direct observation is a challenge. Here, we report the magneto-optical detection of current-induced orbital accumulation at the surface of a light 3$d$ transition metal, Cr. The orbital polarization is in-plane, transverse to the current direction, and scales linearly with current density, consistent with the orbital Hall effect. Com…
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The orbital Hall effect has been theoretically predicted but its direct observation is a challenge. Here, we report the magneto-optical detection of current-induced orbital accumulation at the surface of a light 3$d$ transition metal, Cr. The orbital polarization is in-plane, transverse to the current direction, and scales linearly with current density, consistent with the orbital Hall effect. Comparing the thickness-dependent magneto-optical measurements with $\textit{ab initio}$ calculations, we estimate an orbital diffusion length in Cr of $6.6\pm 0.6$ nm.
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Submitted 18 June, 2023;
originally announced June 2023.
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Atomic Layer Epitaxy of Kagome Magnet Fe${_3}$Sn${_2}$ and Sn-modulated Heterostructures
Authors:
Shuyu Cheng,
Igor Lyalin,
Alexander J. Bishop,
Roland K. Kawakami,
Binbin Wang,
Núria Bagués,
David W. McComb
Abstract:
Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe…
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Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe${_3}$Sn${_2}$. Structural and magnetic characterization of Fe${_3}$Sn${_2}$ on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies of the local magnetic structure by anomalous Nernst effect imaging reveals in-plane oriented micrometer size domains. Superlattice structures consisting of Fe${_3}$Sn${_2}$ and Fe${_3}$Sn are also synthesized by atomic layer molecular beam epitaxy, demonstrating the ability to modulate the sample structure at the atomic level. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe${_3}$Sn${_2}$ with other materials.
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Submitted 15 March, 2022;
originally announced March 2022.
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Kinetically-controlled epitaxial growth of Fe$_3$GeTe$_2$ van der Waals ferromagnetic films
Authors:
Wenyi Zhou,
Alexander J. Bishop,
Menglin Zhu,
Igor Lyalin,
Robert C. Walko,
Jay A. Gupta,
Jinwoo Hwang,
Roland K. Kawakami
Abstract:
We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning…
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We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning transmission electron microscopy and scanning tunneling microscopy, we optimize the FGT films to have atomically smooth surfaces and abrupt interfaces with the Ge(111) substrate. The magnetic properties of our high quality material are confirmed through magneto-optic, magnetotransport, and spin-polarized STM studies. Importantly, this demonstrates how the interplay of energetics and kinetics can help tune the re-evaporation rate of chalcogen atoms and interdiffusion from the underlayer, which paves the way for future studies of van der Waals epitaxy.
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Submitted 8 February, 2022;
originally announced February 2022.
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Epitaxial Growth and Domain Structure Imaging of Kagome Magnet Fe$_3$Sn$_2$
Authors:
Shuyu Cheng,
Igor Lyalin,
Alexander J. Bishop,
Roland K. Kawakami
Abstract:
Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the synthesis of high-quality epitaxial films of topological kagome magnet Fe$_3$Sn$_2$ by atomic layer mole…
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Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the synthesis of high-quality epitaxial films of topological kagome magnet Fe$_3$Sn$_2$ by atomic layer molecular beam epitaxy. Structural and magnetic characterization of Fe$_3$Sn$_2$ on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies of the local magnetic structure by anomalous Nernst effect imaging reveals in-plane oriented micrometer size domains. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe$_3$Sn$_2$ with other materials.
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Submitted 25 May, 2021;
originally announced May 2021.
