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Proximity-induced superconductivity in (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological-insulator nanowires
Authors:
Mengmeng Bai,
Xian-Kui Wei,
Junya Feng,
Martina Luysberg,
Andrea Bliesener,
Gertjan Lippertz,
Anjana Uday,
Alexey A. Taskin,
Joachim Mayer,
Yoichi Ando
Abstract:
When a topological insulator is made into a nanowire, the interplay between topology and size quantization gives rise to peculiar one-dimensional states whose energy dispersion can be manipulated by external fields. In the presence of proximity-induced superconductivity, these 1D states offer a tunable platform for Majorana zero modes. While the existence of such peculiar 1D states has been experi…
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When a topological insulator is made into a nanowire, the interplay between topology and size quantization gives rise to peculiar one-dimensional states whose energy dispersion can be manipulated by external fields. In the presence of proximity-induced superconductivity, these 1D states offer a tunable platform for Majorana zero modes. While the existence of such peculiar 1D states has been experimentally confirmed, the realization of robust proximity-induced superconductivity in topological-insulator nanowires remains a challenge. Here, we report the realization of superconducting topological-insulator nanowires based on (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST) thin films. When two rectangular pads of palladium are deposited on a BST thin film with a separation of 100--200 nm, the BST beneath the pads is converted into a superconductor, leaving a nanowire of BST in-between. We found that the interface is epitaxial and has a high electronic transparency, leading to a robust superconductivity induced in the BST nanowire. Due to its suitable geometry for gate-tuning, this platform is promising for future studies of Majorana zero modes.
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Submitted 29 April, 2022; v1 submitted 19 August, 2021;
originally announced August 2021.
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Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices
Authors:
Jinzhong Zhang,
Pok-Lam Tse,
Abdur-Rehman Jalil,
Jonas Kölzer,
Daniel Rosenbach,
Martina Luysberg,
Gregory Panaitov,
Hans Lüth,
Zhigao Hu,
Detlev Grützmacher,
Jia Grace Lu,
Thomas Schäpers
Abstract:
Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. Here, we report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations, a phase-coherence length of about 200nm at 0.5K is determine…
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Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. Here, we report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations, a phase-coherence length of about 200nm at 0.5K is determined for the hole carriers. The distinct phase-coherence is confirmed by the observation of Aharonov--Bohm type oscillations for magnetic fields applied along the nanowire axis. We interpret the occurrence of these magnetic flux-periodic oscillations by the formation of a tubular hole accumulation layer on the nanowire surface. In addition, for Nb/GeTe-nanowire/Nb Josephson junctions, we obtained a proximity-induced critical current of about 0.2$μ$A at 0.4K. By applying a magnetic field perpendicular to the nanowire axis, the critical current decreases monotonously with increasing magnetic field, which indicates that the structure is in the small-junction-limit. Whereas, by applying a parallel magnetic field the critical current oscillates with a period of the magnetic flux quantum indicating once again the presence of a tubular hole channel.
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Submitted 15 September, 2020;
originally announced September 2020.
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Structural and Nanochemical Properties of AlOx Layers in $Al/AlO_x/Al$-Layer Systems for Josephson Junctions
Authors:
S. Fritz,
L. Radtke,
R. Schneider,
M. Luysberg,
M. Weides,
D. Gerthsen
Abstract:
The structural and nanochemical properties of thin $AlO_x$ layers are decisive for the performance of advanced electronic devices. For example, they are frequently used as tunnel barriers in Josephson junction-based superconducting devices. However, systematic studies of the influence of oxidation parameters on structural and nanochemical properties are rare up to now, as most studies focus on the…
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The structural and nanochemical properties of thin $AlO_x$ layers are decisive for the performance of advanced electronic devices. For example, they are frequently used as tunnel barriers in Josephson junction-based superconducting devices. However, systematic studies of the influence of oxidation parameters on structural and nanochemical properties are rare up to now, as most studies focus on the electrical properties of $AlO_x$ layers. This study aims to close this gap by applying transmission electron microscopy in combination with electron energy loss spectroscopy to analyze the structural and nanochemical properties of differently fabricated $AlO_x$ layers and correlate them with fabrication parameters. With respect to the application of $AlO_x$ as tunnel barrier in superconducting Josephson junctions, $Al/AlO_x/Al$-layer systems were deposited on Si substrates. We will show that the oxygen content and structure of amorphous $AlO_x$ layers is strongly dependent on the fabrication process and oxidation parameters. Dynamic and static oxidation of Al yields oxygen-deficient amorphous $AlO_x$ layers, where the oxygen content ranges from x = 0.5 to x = 1.3 depending on oxygen pressure and substrate temperature. Thicker layers of stoichiometric crystalline $γ-Al_2O_3$ layers were grown by electron-beam evaporation of $Al_2O_3$ and reactive sputter deposition.
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Submitted 28 October, 2019;
originally announced October 2019.
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Novel self-epitaxy for inducing superconductivity in the topological insulator (Bi1-xSbx)2Te3
Authors:
Mengmeng Bai,
Fan Yang,
Martina Luysberg,
Junya Feng,
Andrea Bliesener,
Gertjan Lippertz,
A. A. Taskin,
Joachim Mayer,
Yoichi Ando
Abstract:
Using the superconducting proximity effect for engineering a topological superconducting state in a topological insulator (TI) is a promising route to realize Majorana fermions. However, epitaxial growth of a superconductor on the TI surface to achieve a good proximity effect has been a challenge. We discovered that simply depositing Pd on thin films of the TI material (Bi$_{1-x}$Sb$_x$)$_2$Te…
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Using the superconducting proximity effect for engineering a topological superconducting state in a topological insulator (TI) is a promising route to realize Majorana fermions. However, epitaxial growth of a superconductor on the TI surface to achieve a good proximity effect has been a challenge. We discovered that simply depositing Pd on thin films of the TI material (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ leads to an epitaxial self-formation of PdTe$_2$ superconductor having the superconducting transition temperature of ~1 K. This self-formed superconductor proximitizes the TI, which is confirmed by the appearance of a supercurrent in Josephson-junction devices made on (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$. This self-epitaxy phenomenon can be conveniently used for fabricating TI-based superconducting nanodevices to address the superconducting proximity effect in TIs.
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Submitted 27 July, 2020; v1 submitted 18 October, 2019;
originally announced October 2019.
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Boosting Transparency in Topological Josephson Junctions via Stencil Lithography
Authors:
Peter Schüffelgen,
Daniel Rosenbach,
Chuan Li,
Tobias Schmitt,
Michael Schleenvoigt,
Abdur R. Jalil,
Jonas Kölzer,
Meng Wang,
Benjamin Bennemann,
Umut Parlak,
Lidia Kibkalo,
Martina Luysberg,
Gregor Mussler,
Alexander. A. Golubov,
Alexander Brinkman,
Thomas Schäpers,
Detlev Grützmacher
Abstract:
Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. H…
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Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. Here, we present an in-situ process, which allows to fabricate such hybrids by combining molecular beam epitaxy and stencil lithography. As-prepared Josephson junctions show nearly perfect interface transparency and very large $I_CR_N$ products. The Shapiro response of radio frequency measurements indicates the presence of gapless Andreev bound states, so-called Majorana bound states.
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Submitted 20 October, 2018; v1 submitted 5 November, 2017;
originally announced November 2017.
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Nanoscale X-ray investigation of magnetic metallofullerene peapods
Authors:
Fabian Fritz,
Rasmus Westerström,
Aram Kostanyan,
Christin Schlesier,
Jan Dreiser,
Benjamin Watts,
Lothar Houben,
Martina Luysberg,
Stanislav M Avdoshenko,
Alexey A Popov,
Claus M Schneider,
Carola Meyer
Abstract:
Endohedral lanthanide ions packed inside carbon nanotubes (CNTs) in a one-dimensional assembly have been studied with a combination of high resolution transmission electron microscopy (HRTEM), scanning transmission X-ray microscopy (STXM), and X-ray magnetic circular dichroism (XMCD). By correlating HRTEM and STXM images we show that structures down to 30 nm are resolved with chemical contrast and…
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Endohedral lanthanide ions packed inside carbon nanotubes (CNTs) in a one-dimensional assembly have been studied with a combination of high resolution transmission electron microscopy (HRTEM), scanning transmission X-ray microscopy (STXM), and X-ray magnetic circular dichroism (XMCD). By correlating HRTEM and STXM images we show that structures down to 30 nm are resolved with chemical contrast and record X-ray absorption spectra from endohedral lanthanide ions embedded in individual nanoscale CNT bundles. XMCD measurements of an Er$_3$N@C$_{80}$ bulk sample and a macroscopic assembly of filled CNTs indicates that the magnetic properties of the endohedral Er3+ ions are unchanged when encapsulated in CNTs. This study demonstrates the feasibility of local magnetic X-ray characterization of low concentrations of lanthanide ions embedded in molecular nanostructures.
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Submitted 30 August, 2017;
originally announced August 2017.
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$\mbox{Bi}_{1}\mbox{Te}_{1}$: a dual topological insulator
Authors:
Markus Eschbach,
Martin Lanius,
Chengwang Niu,
Ewa Młyńczak,
Pika Gospodarič,
Jens Kellner,
Peter Schüffelgen,
Mathias Gehlmann,
Sven Döring,
Elmar Neumann,
Martina Luysberg,
Gregor Mussler,
Lukasz Plucinski,
Markus Morgenstern,
Detlev Grützmacher,
Gustav Bihlmayer,
Stefan Blügel,
Claus M. Schneider
Abstract:
A combined theoretical and experimental study reveals evidence for the dual topological insulating character of the stoichiometric natural superlattice phase $\mathrm{Bi_{1}Te_{1}}=\mathrm{[Bi_{2}]_{1}[Bi_{2}Te_{3}]_{2}}$, being a stack of alternating Bi bilayers and two quintuple layers of $\mathrm{Bi_{2}Te_{3}}$. We identify $\mathrm{Bi_{1}Te_{1}}$ by density functional theory to exhibit a non t…
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A combined theoretical and experimental study reveals evidence for the dual topological insulating character of the stoichiometric natural superlattice phase $\mathrm{Bi_{1}Te_{1}}=\mathrm{[Bi_{2}]_{1}[Bi_{2}Te_{3}]_{2}}$, being a stack of alternating Bi bilayers and two quintuple layers of $\mathrm{Bi_{2}Te_{3}}$. We identify $\mathrm{Bi_{1}Te_{1}}$ by density functional theory to exhibit a non trivial time-reversal symmetry-driven character of $\mathbb{Z}_{2}=(0;001)$ and additionally a mirror-symmetry induced mirror Chern number of $n_{\cal M}=-2$, which indicates that $\mathrm{Bi_{1}Te_{1}}$ is both a weak topological insulator and a topological crystalline insulator. The coexistence of the two phenomena preordains distinct crystal planes to host topological surface states that are protected by the respective symmetries. The surface perpendicular to the stacking direction is the 'dark' surface of the weak topological insulator, while hosting mirror-symmetry protected surface states along the $\bar{Γ\mathrm{M}}$ direction at non-time-reversal invariant momenta points. We confirm the stacking sequence of our MBE-grown $\mathrm{Bi_{1}Te_{1}}$ thin films by X-ray diffraction and transmission electron microscopy, and find indications of the topological crystalline and weak topological character in the surface electronic spin structure by spin- and angle-resolved photoemission spectroscopy, which nicely match the results from density functional theory.
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Submitted 29 April, 2016;
originally announced April 2016.
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Realization of a vertical topological p-n junction in epitaxial $\mathrm{Sb_2Te_3 / Bi_2Te_3}$ heterostructures
Authors:
Markus Eschbach,
Ewa Mlynczak,
Jens Kellner,
Jörn Kampmeier,
Martin Lanius,
Elmar Neumann,
Christian Weyrich,
Mathias Gehlmann,
Pika Gospodaric,
Sven Döring,
Gregor Mussler,
Nataliya Demarina,
Martina Luysberg,
Gustav Bihlmayer,
Thomas Schäpers,
Lukasz Plucinski,
Stefan Blügel,
Markus Morgenstern,
Claus M. Schneider,
Detlev Grützmacher
Abstract:
3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct…
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3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p-n junction made of a heterostructure of two different binary 3D TI materials $\mathrm{Bi_2Te_3}$ and $\mathrm{Sb_2Te_3}$ epitaxially grown on Si(111). We demonstrate that the chemical potential is tunable by about 200 meV when decreasing the upper $\mathrm{Sb_2Te_3}$ layer thickness from 25 to 6 quintuple layers without applying any external bias. These results make it realistic to observe the topological exciton condensate and pave the way of exploring other exotic quantum phenomena in the near future.
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Submitted 9 October, 2015;
originally announced October 2015.
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Interface Engineering to Create a Strong Spin Filter Contact to Silicon
Authors:
C. Caspers,
A. Gloskovskii,
M. Gorgoi,
C. Besson,
M. Luysberg,
K. Rushchanskii,
M. Ležaić,
C. S. Fadley,
W. Drube,
M. Müller
Abstract:
Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality.
To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides.
We present a solution to this long-standi…
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Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality.
To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides.
We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface:
($i$) an $in\:situ$ hydrogen-Si $(001)$ passivation and ($ii$) the application of oxygen-protective Eu monolayers --- without using any additional buffer layers.
By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime --- and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si $(001)$ in order to create a strong spin filter contact to silicon.
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Submitted 17 March, 2016; v1 submitted 20 April, 2015;
originally announced April 2015.
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Suppressing twin formation in Bi2Se3 thin films
Authors:
N. V. Tarakina,
S. Schreyeck,
M. Luysberg,
S. Grauer,
C. Schumacher,
G. Karczewski,
K. Brunner,
C. Gould,
H. Buhmann,
R. E. Dunin-Borkowski,
L. W. Molenkamp
Abstract:
The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete s…
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The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete suppression of twin formation in the Bi2Se3 thin films and a perfect interface between the films and their substrates. The only type of structural defects that persist in the "twin-free" films is an antiphase domain boundary, which is associated with variations in substrate height. It is also shown that the substrate surface termination determines which family of twin domains dominates.
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Submitted 22 March, 2015;
originally announced March 2015.
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Optimized fabrication of high quality La0.67Sr0.33MnO3 thin films considering all essential characteristics
Authors:
H Boschker,
M Huijben,
A Vailionis,
J Verbeeck,
S van Aert,
M Luysberg,
S Bals,
G van Tendeloo,
E P Houwman,
G Koster,
D H A Blank,
G Rijnders
Abstract:
In this article, an overview of the fabrication and properties of high quality La0.67Sr0.33MnO3 (LSMO) thin films is given. A high quality LSMO film combines a smooth surface morphology with a large magnetization and a small residual resistivity, while avoiding precipitates and surface segregation. In literature, typically only a few of these issues are adressed. We therefore present a thorough ch…
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In this article, an overview of the fabrication and properties of high quality La0.67Sr0.33MnO3 (LSMO) thin films is given. A high quality LSMO film combines a smooth surface morphology with a large magnetization and a small residual resistivity, while avoiding precipitates and surface segregation. In literature, typically only a few of these issues are adressed. We therefore present a thorough characterization of our films, which were grown by pulsed laser deposition. The films were characterized with reflection high energy electron diffraction, atomic force microscopy, x-ray diffraction, magnetization and transport measurements, x-ray photoelectron spectroscopy and scanning transmission electron microscopy. The films have a saturation magnetization of 4.0 μB/Mn, a Curie temperature of 350 K and a residual resistivity of 60 μΩcm. These results indicate that high quality films, combining both large magnetization and small residual resistivity, were realized. A comparison between different samples presented in literature shows that focussing on a single property is insufficient for the optimization of the deposition process. For high quality films, all properties have to be adressed. For LSMO devices, the thin film quality is crucial for the device performance. Therefore, this research is important for the application of LSMO in devices.
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Submitted 11 March, 2011;
originally announced March 2011.
