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Low-energy excitations in multiple modulation-doped CdTe/(CdMg)Te quantum wells
Authors:
D. Yavorskiy,
F. Le Mardelé,
I. Mohelsky,
M. Orlita,
Z. Adamus,
T. Wojtowicz,
J. Wróbel,
K. Karpierz,
J. Łusakowski
Abstract:
Low energy excitations of a two-dimensional electron gas (2DEG) in modulation-doped multiple (ten) quantum wells (QWs) was studied using far-infrared magneto-transmission technique at liquid helium temperatures. A large distance between neighbouring QWs of 54 nm excluded a direct interaction of electron wave functions confined in the wells. In four samples which differed in the spacer width and th…
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Low energy excitations of a two-dimensional electron gas (2DEG) in modulation-doped multiple (ten) quantum wells (QWs) was studied using far-infrared magneto-transmission technique at liquid helium temperatures. A large distance between neighbouring QWs of 54 nm excluded a direct interaction of electron wave functions confined in the wells. In four samples which differed in the spacer width and the level of doping with iodine donors, supplied with a metallic grid coupler, a uniform picture of exitations of the 2DEG was observed. These involved the cyclotron resonance (CR), its second harmonic (2CR) and magnetoplasmon modes (MPMs). MPMs with a small amplitude originated from excitations of the 2DEG in a single QW and these with a high amplitude resulted from a coherent excitation of the 2DEG in all wells. A polaron effect resulting from the interaction of the CR, 2CR and MPMs with an optical phonon was observed and discribed with appropriate models. Both types of MPMs exhibited gaps in the disperion relations at the frequency close to the 2CR, leading to Bernstein modes, which was discribed with an appropriate (non-local) theoretical model.
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Submitted 28 March, 2025;
originally announced March 2025.
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Extreme Terahertz Nonlinearity of AlGaN/GaN-based Grating-Gate Plasmonic Crystals
Authors:
Pavlo Sai,
Vadym V. Korotyeyev,
Dmytro B. But,
Maksym Dub,
Dmitriy Yavorskiy,
Jerzy Łusakowski,
Mateusz Słowikowski,
Serhii Kukhtaruk,
Yurii Liashchuk,
Jeong Woo Han,
Christoph Böttger,
Alexej Pashkin,
Stephan Winnerl,
Wojciech Knap,
Martin Mittendorff
Abstract:
We present a novel approach to enhance THz nonlinearity by the resonant excitation of two-dimensional plasmons in grating-gate plasmonic crystals. Using a high-electric-field THz pump-THz probe technique, we investigate the nonlinear interaction of spectrally narrow THz pulses with plasmon oscillations in a two-dimensional electron gas on an AlGaN/GaN interface integrated with metallic grating. No…
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We present a novel approach to enhance THz nonlinearity by the resonant excitation of two-dimensional plasmons in grating-gate plasmonic crystals. Using a high-electric-field THz pump-THz probe technique, we investigate the nonlinear interaction of spectrally narrow THz pulses with plasmon oscillations in a two-dimensional electron gas on an AlGaN/GaN interface integrated with metallic grating. Nonlinear effects are observed as ultrafast, pump-induced changes in THz transmission, with relative transparency strongly dependent on plasmonic mode excitation and saturating at pump fluences of about 200 nJ cm-2. The maximal relative transparency, reaching 45 % at 350 nJ cm -2, occurs under resonant excitation of a localized plasmon mode at the strong electrostatic modulation of 2DEG concentration. Transient dynamics reveal ultrafast relaxation times of 15-20 ps, while the effects can be observed at elevated temperatures of up to 150 K. A nonlinear model of plasmonic crystal, based on finite-difference time-domain electrodynamic simulations coupled with viscous hydrodynamic electron transport model, elucidates key nonlinear mechanisms, including near-field effects under metallic gratings, electron heating, plasmon resonance broadening, and redshift. These results demonstrate that even conventional semiconductors such as AlGaN/GaN can achieve nonlinear THz responses comparable to or exceeding those of graphene, showing strong potential for ultrafast THz modulation and nonlinear photonics applications.
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Submitted 4 March, 2025;
originally announced March 2025.
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Pressure tuning of HgCdTe epitaxial layers -- the role of the highly disordered buffer layer
Authors:
D. Yavorskiy,
Y. Ivonyak,
D. But,
K. Karpierz,
A. Krajewska,
M. Haras,
P. Sai,
M. Dub,
A. Kazakov,
G. Cywiński,
W. Knap,
J. Łusakowski
Abstract:
HgCdTe alloys are unique because by increasing the Cd content x, one modifies the band structure from inverted to normal, which fundamentally modifies the dispersion of bulk and surface or edge (in the case of quantum wells) energy states. Using alloys with x close to the concentration x_c at which the band inversion transition is observed and with additional application of hydrostatic pressure (p…
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HgCdTe alloys are unique because by increasing the Cd content x, one modifies the band structure from inverted to normal, which fundamentally modifies the dispersion of bulk and surface or edge (in the case of quantum wells) energy states. Using alloys with x close to the concentration x_c at which the band inversion transition is observed and with additional application of hydrostatic pressure (p), one creates a favorable playground for studying the evolution of Dirac matter and its topological properties. In this work, cryogenic magnetospectroscopy in quantizing magnetic fields (B) at the far-infrared is used to study inter-Landau-level transitions in high-quality HgCdTe MBE-grown epitaxial layers with x ~ x_c as a function of p up to 4.2 kbar. Special attention is paid to elucidate the role of the substrate and buffer layers, which usually modify the pressure coefficients of epitaxial layers. For this purpose, comparative measurements were carried out on as-grown epilayers with a GaAs substrate and on free-standing layers obtained by etching off the substrate. Spectra registered as a function of B (at given p) were analyzed with the help of the Kane model modified to include magnetic field. The pressure coefficient as well as the difference between conduction and valence band deformation potentials of the free-standing layer were determined at 2 K. Surprisingly, the deformation potentials and pressure coefficients of the epitaxial layer and those of the free-standing layer differed by no more than 10 % in the pressure range up to 4.2 kbar. This finding questions the common belief of a dominant influence of the substrate on the pressure coefficients of epitaxial layers...
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Submitted 23 June, 2024;
originally announced June 2024.
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Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: manifestation of spin-orbit band splitting
Authors:
P. Sai,
S. O. Potashin,
M. Szola,
D. Yavorskiy,
G. Cywinski,
P. Prystawko,
J. Lusakowski,
S. D. Ganichev,
S. Rumyantsev,
W. Knap,
V. Yu. Kachorovskii
Abstract:
We report on the study of the magnetic ratchet effect in AlGaN/GaN heterostructures superimposed with lateral superlattice formed by dual-grating gate structure. We demonstrate that irradiation of the superlattice with terahertz beam results in the dc ratchet current, which shows giant magneto-oscillations in the regime of Shubnikov de Haas oscillations. The oscillations have the same period and a…
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We report on the study of the magnetic ratchet effect in AlGaN/GaN heterostructures superimposed with lateral superlattice formed by dual-grating gate structure. We demonstrate that irradiation of the superlattice with terahertz beam results in the dc ratchet current, which shows giant magneto-oscillations in the regime of Shubnikov de Haas oscillations. The oscillations have the same period and are in phase with the resistivity oscillations. Remarkably, their amplitude is greatly enhanced as compared to the ratchet current at zero magnetic field, and the envelope of these oscillations exhibits large beatings as a function of the magnetic field. We demonstrate that the beatings are caused by the spin-orbit splitting of the conduction band. We develop a theory which gives a good qualitative explanation of all experimental observations and allows us to extract the spin-orbit splitting constant α_{\rm SO}= 7.5 \pm 1.5 meV \unicode{x212B}. We also discuss how our results are modified by plasmonic effects and show that these effects become more pronounced with decreasing the period of the gating gate structures down to sub-microns.
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Submitted 25 February, 2021;
originally announced February 2021.
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The photoresponse of a two-dimensional electron gas at the second harmonic of the cyclotron resonance
Authors:
M. Białek,
M. Czapkiewicz,
J. Wróbel,
V. Umansky,
J. Łusakowski
Abstract:
Terahertz spectroscopy experiments at magnetic fields and low temperatures were carried out on samples of different gate shapes processed on a high electron mobility GaAs/AlGaAs heterostructure. For a given radiation frequency, multiple magnetoplasmon resonances were observed with a dispersion relation described within a local approximation of the magnetoconductivity tensor. The second harmonic of…
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Terahertz spectroscopy experiments at magnetic fields and low temperatures were carried out on samples of different gate shapes processed on a high electron mobility GaAs/AlGaAs heterostructure. For a given radiation frequency, multiple magnetoplasmon resonances were observed with a dispersion relation described within a local approximation of the magnetoconductivity tensor. The second harmonic of the cyclotron resonance was observed and its appearance was interpreted as resulting from a high frequency, inhomogeneous electromagnetic field on the border of a two-dimensional electron gas with a metallic gate and/or an ohmic contact.
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Submitted 9 December, 2014; v1 submitted 3 December, 2014;
originally announced December 2014.
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Magnetic field tuning of exciton polaritons in a semiconductor microcavity
Authors:
B. Pietka,
D. Zygmunt,
M. Krol,
J. Szczytko,
J. Lusakowski,
M. R. Molas,
A. A. L. Nicolet,
P. Stepnicki,
P. Zieba,
I. Tralle,
F. Morier-Genoud,
M. Matuszewski,
M. Potemski,
B. Deveaud
Abstract:
We detail the influence of a magnetic field on exciton-polaritons inside a semiconductor microcavity. Magnetic field can be used as a tuning parameter for exciton and photon resonances. We discuss the change of the exciton energy, the oscillator strength and redistribution of the polariton density along the dispersion curves due to the magnetically-induced detuning. We have observed that field-ind…
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We detail the influence of a magnetic field on exciton-polaritons inside a semiconductor microcavity. Magnetic field can be used as a tuning parameter for exciton and photon resonances. We discuss the change of the exciton energy, the oscillator strength and redistribution of the polariton density along the dispersion curves due to the magnetically-induced detuning. We have observed that field-induced shrinkage of the exciton wave function has a direct influence not only on the exciton oscillator strength, which is observed to increase with the magnetic field, but also on the polariton linewidth. We discuss the effect of the Zeeman splitting on polaritons which magnitude changes with the exciton Hopfield coefficient and can be modelled by independent coupling of the two spin components of excitons with cavity photons.
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Submitted 28 November, 2014;
originally announced November 2014.
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Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure
Authors:
M. Białek,
A. M. Witowski,
M. Orlita,
M. Potemski,
M. Czapkiewicz,
J. Wróbel,
V. Umansky,
M. Grynberg,
J. Łusakowski
Abstract:
In order to characterize magnetic-field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a fun…
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In order to characterize magnetic-field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the cyclotron resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with the THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.
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Submitted 7 May, 2014; v1 submitted 9 April, 2014;
originally announced April 2014.
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Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Authors:
W. Knap,
M. Dyakonov,
D. Coquillat,
F. Teppe,
N. Dyakonova,
J. Łusakowski,
K. Karpierz,
M. Sakowicz,
G. Valusis,
D. Seliuta,
I. Kasalynas,
A. El Fatimy,
Y. Meziani,
T. Otsuji
Abstract:
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves res…
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Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.
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Submitted 15 July, 2009;
originally announced July 2009.
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Terahertz Radiation Detection by Field Effect Transistor in Magnetic Field
Authors:
S. Boubanga-Tombet,
M. Sakowicz,
D. Coquillat,
F. Teppe,
W. Knap,
M. I. Dyakonov,
K. Karpierz,
J. Lusakowski,
M. Grynberg
Abstract:
We report on terahertz radiation detection with InGaAs/InAlAs Field Effect Transistors in quantizing magnetic field. The photovoltaic detection signal is investigated at 4.2 K as a function of the gate voltage and magnetic field. Oscillations analogous to the Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance, are observed. The results are quantitative…
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We report on terahertz radiation detection with InGaAs/InAlAs Field Effect Transistors in quantizing magnetic field. The photovoltaic detection signal is investigated at 4.2 K as a function of the gate voltage and magnetic field. Oscillations analogous to the Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance, are observed. The results are quantitatively described by a recent theory, showing that the detection is due to rectification of the terahertz radiation by plasma waves related nonlinearities in the gated part of the channel.
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Submitted 14 April, 2009;
originally announced April 2009.
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In-plane optical anisotropy due to conduction band electron wavefunctions
Authors:
J. Łusakowski,
M. Sakowicz,
K. J. Friedland,
R. Hey,
K. Ploog
Abstract:
Photoluminescence measurements were carried out on Be $δ$-doped
GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure at 1.6 K in magnetic fields ($B$) up to 5 T. Luminescence originating from recombination of a two-dimensional electron gas (2DEG) and photo excited holes localized on Be acceptors was analyzed. The degree of circular polarization ($γ_C$) of the luminescence from fully occupied Landau l…
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Photoluminescence measurements were carried out on Be $δ$-doped
GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure at 1.6 K in magnetic fields ($B$) up to 5 T. Luminescence originating from recombination of a two-dimensional electron gas (2DEG) and photo excited holes localized on Be acceptors was analyzed. The degree of circular polarization ($γ_C$) of the luminescence from fully occupied Landau levels was determined as a function of $B$ and the 2DEG concentration, $n_s$. At $B$ constant, $γ_C$ decreased with the increase of $n_s$. Two mechanisms of the $γ_C(n_s)$ dependence are discussed: a) the Stark effect on a photo excited hole bound to Be acceptor and b) the in-plane anisotropy of the intensity of optical transitions. A quantitative analysis shows that the influence of the Stark effect on $γ_C$ is negligible in the present experiment. We propose that the $γ_C(n_s)$ dependence results from the $C_{2v}$ symmetry of conduction band electron wavefunctions and we give qualitative arguments supporting this interpretation.
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Submitted 5 March, 2007;
originally announced March 2007.
