Showing 1–13 of 13 results for author: Lukens, J

Microstrip filters for measurement and control of superconducting qubits

Authors: Luigi Longobardi, Douglas A. Bennett, Vijay Patel, Wei Chen, James E. Lukens

Abstract: Careful filtering is necessary for observations of quantum phenomena in superconducting circuits at low temperatures. Measurements of coherence between quantum states requires extensive filtering to protect against noise coupled from room temperature electronics. We demonstrate distributed transmission line filters which cut off exponentially at GHz frequencies and can be anchored at the base temp… ▽ More Careful filtering is necessary for observations of quantum phenomena in superconducting circuits at low temperatures. Measurements of coherence between quantum states requires extensive filtering to protect against noise coupled from room temperature electronics. We demonstrate distributed transmission line filters which cut off exponentially at GHz frequencies and can be anchored at the base temperature of a dilution refrigerator. The compact design makes them suitable to filter many different bias lines in the same setup, necessary for the control and measurement of superconducting qubits. △ Less

Submitted 14 January, 2013; originally announced January 2013.

Journal ref: Rev. Sci. Instrum. 84, 014706 (2013)

Decoherence in rf SQUID Qubits

Authors: Douglas A. Bennett, Luigi Longobardi, Vijay Patel, Wei Chen, Dmitri V. Averin, James E. Lukens

Abstract: We report measurements of coherence times of an rf SQUID qubit using pulsed microwaves and rapid flux pulses. The modified rf SQUID, described by an double-well potential, has independent, in situ, controls for the tilt and barrier height of the potential. The decay of coherent oscillations is dominated by the lifetime of the excited state and low frequency flux noise and is consistent with inde… ▽ More We report measurements of coherence times of an rf SQUID qubit using pulsed microwaves and rapid flux pulses. The modified rf SQUID, described by an double-well potential, has independent, in situ, controls for the tilt and barrier height of the potential. The decay of coherent oscillations is dominated by the lifetime of the excited state and low frequency flux noise and is consistent with independent measurement of these quantities obtained by microwave spectroscopy, resonant tunneling between fluxoid wells and decay of the excited state. The oscillation's waveform is compared to analytical results obtained for finite decay rates and detuning and averaged over low frequency flux noise. △ Less

Submitted 14 November, 2008; originally announced November 2008.

Comments: 24 pages, 13 figures, submitted to the journal Quantum Information Processing

Journal ref: Quantum Information Processing Volume 8, Issue 2-3 , pp 217-243 (2009)

Temperature Dependence of Critical Current Fluctuations in Nb/AlO$\mathrm{_{x}}$/Nb Josephson Junctions

Authors: Shawn Pottorf, Vijay Patel, James E. Lukens

Abstract: We have measured the low frequency critical current noise in Nb/AlO$_{\mathrm{x}}$/Nb Josephson junctions. Unshunted junctions biased above the gap voltage and resistively shunted junctions biased near the critical current, $I_{c}$, have been measured. For both, the spectral density of $δI_{c}/I_{c}$, $S_{i_{c}}(f)$, is proportional to $1/f$, scales inversely as the area, $A$, and is independent… ▽ More We have measured the low frequency critical current noise in Nb/AlO$_{\mathrm{x}}$/Nb Josephson junctions. Unshunted junctions biased above the gap voltage and resistively shunted junctions biased near the critical current, $I_{c}$, have been measured. For both, the spectral density of $δI_{c}/I_{c}$, $S_{i_{c}}(f)$, is proportional to $1/f$, scales inversely as the area, $A$, and is independent of $J_{c} \equiv I_{c}/A$ over a factor of nearly 20 in $J_{c}$. For all devices measured at 4.2 K, $S_{i_{c}}$(1 Hz)$= 2.0 \pm 0.4 \cdot 10^{-12}$/Hz when scaled to A=1 $μ$m$^{2}$. We find that, from 4.2 K to 0.46 K, $S_{i_{c}}(f)$ decreases linearly with temperature. △ Less

Submitted 15 December, 2008; v1 submitted 18 September, 2008; originally announced September 2008.

Measurement of Dissipation of a Three-Level rf SQUID Qubit

Authors: Shao-Xiong Li, Wei Qiu, Zhongyuan Zhou, M. Matheny, Wei Chen, J. E. Lukens, Siyuan Han

Abstract: The dissipation-induced relaxation (T_1) time of a macroscopic quantum system - a \{lambda}-type three-level rf SQUID flux qubit weakly coupled to control and readout circuitry (CRC) - is investigated via time-domain measurement. The measured interwell relaxation time of the qubit's first excited state, T_1=3.45+/-0.06 \{mu}s, corresponds to an effective damping resistance of the flux qubit R=1.… ▽ More The dissipation-induced relaxation (T_1) time of a macroscopic quantum system - a \{lambda}-type three-level rf SQUID flux qubit weakly coupled to control and readout circuitry (CRC) - is investigated via time-domain measurement. The measured interwell relaxation time of the qubit's first excited state, T_1=3.45+/-0.06 \{mu}s, corresponds to an effective damping resistance of the flux qubit R=1.6+/-0.1 M\{omega} which is much lower than the intrinsic quasiparticle resistance of the Josephson tunnel junction. An analysis of the system shows that although the CRC is very weakly coupled to the qubit it is the primary source of damping. This type of damping can be significantly reduced by the use of more sophisticated circuit design to allow coherent manipulation of qubit states. △ Less

Submitted 1 July, 2005; originally announced July 2005.

Comments: 5 pages, 4 figures

Crossover from Kramers to phase-diffusion switching in hysteretic DC-SQUIDs

Authors: J. Mannik, S. Li, W. Qiu, W. Chen, V. Patel, S. Han, J. E. Lukens

Abstract: We have measured and propose a model for switching rates in hysteretic DC-SQUID in the regime where phase diffusion processes start to occur. We show that the switching rates in this regime are smaller than the rates given by Kramers' formula due to retrapping of Josephson phase. The retrapping process, which is affected by the frequency dependent impedance of the environment of the DC-SQUID, le… ▽ More We have measured and propose a model for switching rates in hysteretic DC-SQUID in the regime where phase diffusion processes start to occur. We show that the switching rates in this regime are smaller than the rates given by Kramers' formula due to retrapping of Josephson phase. The retrapping process, which is affected by the frequency dependent impedance of the environment of the DC-SQUID, leads to a peaked second moment of the switching distribution as a function of temperature. The temperature where the peaks occur are proportional to the critical current of the DC- SQUID. △ Less

Submitted 30 March, 2005; originally announced March 2005.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 71, 220509 (2005)

Aluminum Oxide Layers as Possible Components for Layered Tunnel Barriers

Authors: E. Cimpoiasu, S. K. Tolpygo, X. Liu, N. Simonian, J. E. Lukens, R. F. Klie, Y. Zhu, K. K. Likharev

Abstract: We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 deg C. Post-annealing at temperatures above 300 deg C results in a significant decrease of the tunneling conductance of thermally-g… ▽ More We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 deg C. Post-annealing at temperatures above 300 deg C results in a significant decrease of the tunneling conductance of thermally-grown barriers, while plasma-grown barriers start to change only at annealing temperatures above 450 deg C. Fitting the experimental I-V curves of the junctions using the results of the microscopic theory of direct tunneling shows that the annealing of thermally-grown oxides at temperatures above 300 deg C results in a substantial increase of their average tunnel barriers height, from ~1.8 eV to ~2.45 eV, versus the practically unchanged height of ~2.0 eV for plasma-grown layers. This difference, together with high endurance of annealed barriers under electric stress (breakdown field above 10 MV/cm) may enable all-AlOx and SiO2/AlOx layered "crested" barriers for advanced floating-gate memory applications. △ Less

Submitted 3 February, 2004; originally announced February 2004.

Comments: 7 pages, 6 figures

Journal ref: J. Appl. Phys., vol. 96, no. 2, pp. 1088 -1093, Jul 2004

Effect of Measurement on the Periodicity of the Coulomb Staircase of a Superconducting Box

Authors: J. Mannik, J. E. Lukens

Abstract: We report on the effect of the back-action of a Single Cooper Pair Transistor electrometer (E) on the measurement of charge on the island of a superconducting box (B). The charge is e-periodic in the gate bias of B when E is operated near voltages 2Delta/e or 4Delta/e. We show that this is due to quasiparticle poisoning of B at a rate proportional to the number of quasiparticle tunneling events… ▽ More We report on the effect of the back-action of a Single Cooper Pair Transistor electrometer (E) on the measurement of charge on the island of a superconducting box (B). The charge is e-periodic in the gate bias of B when E is operated near voltages 2Delta/e or 4Delta/e. We show that this is due to quasiparticle poisoning of B at a rate proportional to the number of quasiparticle tunneling events in E per second. We are able to eliminate this back action and recover 2e charge periodicity using a new measurement method based on switching current modulation of E. △ Less

Submitted 6 November, 2003; v1 submitted 8 May, 2003; originally announced May 2003.

Comments: 4 pages, 4 figures, revised version

Journal ref: Phys. Rev. Lett. 92, 057004 (2004)

Universal distribution of transparencies in highly conductive Nb/AlO$_x$/Nb junctions

Authors: Y. Naveh, Vijay Patel, D. V. Averin, K. K. Likharev, J. E. Lukens

Abstract: We report the observation of the universal distribution of transparencies, predicted by Schep and Bauer [Phys. Rev. Lett. {\bf 78}, 3015 (1997)] for dirty sharp interfaces, in uniform Nb/AlO$_x$/Nb junctions with high specific conductance ($10^8$ Ohm$^{-1}$cm$^{-2}$). Experiments used the BCS density of states in superconducting niobium for transparency distribution probing. Experimental results… ▽ More We report the observation of the universal distribution of transparencies, predicted by Schep and Bauer [Phys. Rev. Lett. {\bf 78}, 3015 (1997)] for dirty sharp interfaces, in uniform Nb/AlO$_x$/Nb junctions with high specific conductance ($10^8$ Ohm$^{-1}$cm$^{-2}$). Experiments used the BCS density of states in superconducting niobium for transparency distribution probing. Experimental results for both the dc $I-V$ curves at magnetic-field-suppressed supercurrent and the Josephson critical current in zero magnetic field coincide remarkably well with calculations based on the multimode theory of multiple Andreev reflections and the Schep-Bauer distribution. △ Less

Submitted 7 September, 2000; v1 submitted 8 June, 2000; originally announced June 2000.

Comments: 4 pages, 4 figures, references added

Macroscopic resonant tunneling of magnetic flux

Authors: D. V. Averin, Jonathan R. Friedman, J. E. Lukens

Abstract: We have developed a quantitative theory of resonant tunneling of magnetic flux between discrete macroscopically distinct quantum states in SQUID systems. The theory is based on the standard density-matrix approach. Its new elements include the discussion of the two different relaxation mechanisms that exist for the double-well potential, and description of the ``photon-assisted'' tunneling drive… ▽ More We have developed a quantitative theory of resonant tunneling of magnetic flux between discrete macroscopically distinct quantum states in SQUID systems. The theory is based on the standard density-matrix approach. Its new elements include the discussion of the two different relaxation mechanisms that exist for the double-well potential, and description of the ``photon-assisted'' tunneling driven by external rf radiation. It is shown that in the case of coherent flux dynamics, rf radiation should lead to splitting of the peaks of resonant flux tunneling, indicating that the resonant tunneling is a convenient tool for studying macroscopic quantum coherence of flux. △ Less

Submitted 3 May, 2000; originally announced May 2000.

Comments: 11 pages, 8 figures

Detection of a Schroedinger's Cat State in an rf-SQUID

Authors: Jonathan R. Friedman, Vijay Patel, W. Chen, S. K. Tolpygo, J. E. Lukens

Abstract: We present experimental evidence for a coherent superposition of macroscopically distinct flux states in an rf-SQUID. When the external flux Phi_x applied to the SQUID is near 1/2 of a flux quantum Phi_0, the SQUID has two nearly degenerate configurations: the zero- and one-fluxoid states, corresponding to a few microamperes of current flowing clockwise or counterclockwise, respectively. The sys… ▽ More We present experimental evidence for a coherent superposition of macroscopically distinct flux states in an rf-SQUID. When the external flux Phi_x applied to the SQUID is near 1/2 of a flux quantum Phi_0, the SQUID has two nearly degenerate configurations: the zero- and one-fluxoid states, corresponding to a few microamperes of current flowing clockwise or counterclockwise, respectively. The system is modeled as a particle in a double-well potential where each well represents a distinct fluxoid state (0 or 1) and the barrier between the wells can be controlled in situ. For low damping and a sufficiently high barrier, the system has a set of quantized energy levels localized in each well. The relative energies of these levels can be varied with Phi_x. External microwaves are used to pump the system from the well-localized ground state of one well into one of a pair of excited states nearer the top of the barrier. We spectroscopically map out the energy of these levels in the neighborhood of their degeneracy point by varying Phi_x as well as the barrier height. We find a splitting between the two states at this point, when both states are below the classical energy barrier, indicating that the system attains a coherent superposition of flux basis states that are macroscopically distinct in that their mean fluxes differ by more than 1/4 Phi_0 and their currents differ by several microamperes. △ Less

Submitted 19 April, 2000; v1 submitted 18 April, 2000; originally announced April 2000.

Comments: 3 RevTeX pages, 4 postscript figures, one in color. Submitted to Nature. Fig. 1 replaced (Postscript problem fixed)

Observation of Coherent Charge-State Mixing in Asymmetric Bloch Transistors

Authors: Daniel J. Flees, J. E. Lukens, Siyuan Han

Abstract: The reduced switching current of an excited energy-band in a Bloch transistor can be used to detect microwave-induced interband transitions. Spectroscopic measurements of the band-gap are performed by mapping the frequency dependence of the excitation threshold where the microwave photon energy and band-gap are equal. This excitation threshold also provides a probe of charge-state mixing on the… ▽ More The reduced switching current of an excited energy-band in a Bloch transistor can be used to detect microwave-induced interband transitions. Spectroscopic measurements of the band-gap are performed by mapping the frequency dependence of the excitation threshold where the microwave photon energy and band-gap are equal. This excitation threshold also provides a probe of charge-state mixing on the island of the transistor. Any asymmetry in the junctions of the transistor makes the coherent mixing of charge-states appear as a finite gap-splitting at the electrostatic degeneracy point between states differing by one excess Cooper-pair on the island. The measured gap-splitting in an asymmetric transistor clearly demonstrates the effect. △ Less

Submitted 5 May, 1999; originally announced May 1999.

Comments: 8 pages including 4 figures. Paper presented at the workshop on "Macroscopic Quantum Tunneling and Dissipation", (Naples, June 1998). To be published in Jour. Supercond

Observation of Strong Coulomb Blockade in Resistively Isolated Tunnel Junctions

Authors: Wei Zheng, Jonathan R. Friedman, D. V. Averin, Siyuan Han, J. E. Lukens

Abstract: We report measurements of the Coulomb-blockade current in resistively isolated (R_{Isol} >> h/e^{2}) tunnel junctions for the temperature range 60mK $We report measurements of the Coulomb-blockade current in resistively isolated ($R_{Isol}\gg h/e^{2})$ tunnel junctions for the temperature range 60mK < T < 230mK where the charging energy E_{c} is much greater than the thermal energy. A zero-bias… ▽ More We report measurements of the Coulomb-blockade current in resistively isolated (R_{Isol} >> h/e^{2}) tunnel junctions for the temperature range 60mK $We report measurements of the Coulomb-blockade current in resistively isolated ($R_{Isol}\gg h/e^{2})$ tunnel junctions for the temperature range 60mK < T < 230mK where the charging energy E_{c} is much greater than the thermal energy. A zero-bias resistance R_{0} of up to 10^{4}R_{T} (the tunnel resistance of the bare junction) is obtained. For eV << E_{c}, the I-V curves for a given R_{Isol} scale as a function of V/T, with I \propto V^{α(R_{Isol})} over a range of V. The data agree well with numerical calculations of the tunneling rate that include environmental effects. △ Less

Submitted 3 June, 1998; originally announced June 1998.

Comments: 13 pages, 3 eps figures

Single-Electron Traps: A Quantitative Comparison of Theory and Experiment

Authors: K. A. Matsuoka, K. K. Likharev, P. Dresselhaus, L. Ji, S. Han, J. Lukens

Abstract: We have carried out a coordinated experimental and theoretical study of single-electron traps based on submicron aluminum islands and aluminum oxide tunnel junctions. The results of geometrical modeling using a modified version of MIT's FastCap were used as input data for the general-purpose single-electron circuit simulator MOSES. The analysis indicates reasonable quantitative agreement between… ▽ More We have carried out a coordinated experimental and theoretical study of single-electron traps based on submicron aluminum islands and aluminum oxide tunnel junctions. The results of geometrical modeling using a modified version of MIT's FastCap were used as input data for the general-purpose single-electron circuit simulator MOSES. The analysis indicates reasonable quantitative agreement between theory and experiment for those trap characteristics which are not affected by random offset charges. The observed differences between theory and experiment (ranging from a few to fifty percent) can be readily explained by the uncertainty in the exact geometry of the experimental nanostructures. △ Less

Submitted 27 September, 1996; originally announced September 1996.

Comments: 17 pages, 21 figures, RevTex, epsf