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Nanoscale spectroscopic imaging of GaAs-AlGaAs quantum well tube nanowires: correlating luminescence with nanowire size and inner multishell structure
Authors:
Paola Prete,
Daniel Wolf,
Fabio Marzo,
Nico Lovergine
Abstract:
The luminescence and inner structure of GaAs-AlGaAs quantum well tube (QWT) nanowires were studied using low-temperature cathodoluminescence (CL) spectroscopic imaging, in combination with scanning transmission electron microscopy (STEM) tomography, allowing for the first time a robust correlation between the luminescence properties of these nanowires and their size and inner 3D structure down to…
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The luminescence and inner structure of GaAs-AlGaAs quantum well tube (QWT) nanowires were studied using low-temperature cathodoluminescence (CL) spectroscopic imaging, in combination with scanning transmission electron microscopy (STEM) tomography, allowing for the first time a robust correlation between the luminescence properties of these nanowires and their size and inner 3D structure down to the nanoscale. Besides the core luminescence and minor defects-related contributions, each nanowire showed one or more QWT peaks associated with nanowire regions of different diameters. The values of the GaAs shell thickness corresponding to each QWT peak were then determined from the nanowire diameters by employing a multishell growth model upon validation against experimental data (core diameter and GaAs and AlGaAs shell thickness) obtained from the analysis of the 3D reconstructed STEM tomogram of a GaAs-AlGaAs QWT nanowire. We found that QWT peak energies as a function of thus-estimated (3-7 nm) GaAs shell thickness are 40-120 meV below the theoretical values of exciton recombination for uniform QWTs symmetrically wrapped around a central core. However, the analysis of the 3D tomogram further evidenced azimuthal asymmetries as well as (azimuthal and axial) random fluctuations of the GaAs shell thickness, suggesting that the red-shift of QWT emissions is prominently due to carrier localization. The CL mapping of QWT emission intensities along the nanowire axis allowed to directly image the nanoscale localization of the emission, supporting the above picture. Our findings contribute to a deeper understanding of the luminescence-structure relationship in QWT nanowires and will foster their applications as efficient nanolaser sources for future monolithic integration onto silicon.
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Submitted 17 October, 2019;
originally announced October 2019.
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Three-dimensional composition and electric potential mapping of III-V core-multishell nanowires by correlative STEM and holographic tomography
Authors:
Daniel Wolf,
René Hübner,
Tore Niermann,
Sebastian Sturm,
Paola Prete,
Nico Lovergine,
Bernd Büchner,
Axel Lubk
Abstract:
The non-destructive characterization of nanoscale devices, such as those based on semiconductor nanowires, in terms of functional potentials is crucial for correlating device properties with their morphological/materials features, as well as for precisely tuning and optimizing their growth process. Electron holographic tomography (EHT) has been used in the past to reconstruct the total potential d…
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The non-destructive characterization of nanoscale devices, such as those based on semiconductor nanowires, in terms of functional potentials is crucial for correlating device properties with their morphological/materials features, as well as for precisely tuning and optimizing their growth process. Electron holographic tomography (EHT) has been used in the past to reconstruct the total potential distribution in 3D but hitherto lacked a quantitative approach to separate potential variations due to chemical composition changes (mean inner potential - MIP) and space charges. In this letter, we combine and correlate EHT and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) tomography on an individual <111> oriented GaAs-AlGaAs core-multishell nanowire (NW). We obtain excellent agreement between both methods in terms of the determined Al concentration within the AlGaAs shell, as well as thickness variations of the few nanometer thin GaAs shell acting as quantum well tube. Subtracting the MIP determined from the STEM tomogram, enables us to observe functional potentials at the NW surfaces and at the Au-NW interface, both ascribed to surface/interface pinning of the semiconductor Fermi level.
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Submitted 9 October, 2018;
originally announced October 2018.
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Nanometer-scale Tomographic Reconstruction of 3D Electrostatic Potentials in GaAs/AlGaAs Core-Shell Nanowires
Authors:
A. Lubk,
D. Wolf,
P. Prete,
N. Lovergine,
T. Niermann,
S. Sturm,
H. Lichte
Abstract:
We report on the development of Electron Holographic Tomography towards a versatile potential measurement technique, overcoming several limitations, such as a limited tilt range, previously hampering a reproducible and accurate electrostatic potential reconstruction in three dimensions. Most notably, tomographic reconstruction is performed on optimally sampled polar grids taking into account symme…
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We report on the development of Electron Holographic Tomography towards a versatile potential measurement technique, overcoming several limitations, such as a limited tilt range, previously hampering a reproducible and accurate electrostatic potential reconstruction in three dimensions. Most notably, tomographic reconstruction is performed on optimally sampled polar grids taking into account symmetry and other spatial constraints of the nanostructure. Furthermore, holographic tilt series acquisition and alignment have been automated and adapted to three dimensions. We demonstrate 6 nm spatial and 0.2 V signal resolution by reconstructing various, previously hidden, potential details of a GaAs/AlGaAs core-shell nanowire. The improved tomographic reconstruction opens pathways towards the detection of minute potentials in nanostructures and an increase in speed and accuracy in related techniques such as X-ray tomography.
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Submitted 7 July, 2014;
originally announced July 2014.
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Microstructural and morphological properties of homoepitaxial (001)ZnTe layers investigated by x-ray diffuse scattering
Authors:
T. Di Luccio,
G. Scalia,
L. Tapfer,
P. Morales,
M. Traversa,
P. Prete,
N. Lovergine
Abstract:
The microstructural and morphological properties of homoepitaxial (001)ZnTe layers are investigated by x-ray diffuse scattering. High resolution reciprocal space maps recorded close to the ZnTe (004) Bragg peak show different diffuse scattering features. One kind of cross-shaped diffuse scattering streaks along <111> directions can be attributed to stacking faults within the epilayers. Another k…
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The microstructural and morphological properties of homoepitaxial (001)ZnTe layers are investigated by x-ray diffuse scattering. High resolution reciprocal space maps recorded close to the ZnTe (004) Bragg peak show different diffuse scattering features. One kind of cross-shaped diffuse scattering streaks along <111> directions can be attributed to stacking faults within the epilayers. Another kind of cross-shaped streaks inclined at an angle of about 80deg with respect to the <110> in-plane direction arises from the morphology of the epilayers. (abridged version)
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Submitted 16 April, 2005;
originally announced April 2005.
