High-temperature phonons in h-BN: momentum-resolved vibrational spectroscopy and theory
Authors:
Andrew O'Hara,
Benjamin Plotkin-Swing,
Niklas Dellby,
Juan Carlos Idrobo,
Ondrej L. Krivanek,
Tracy C. Lovejoy,
Sokrates T. Pantelides
Abstract:
Vibrations in materials and nanostructures at sufficiently high temperatures result in anharmonic atomic displacements, which leads to new phenomena such as thermal expansion and multiphonon scattering processes, with a profound impact on temperature-dependent material properties including thermal conductivity, phonon lifetimes, nonradiative electronic transitions, and phase transitions. Nanoscale…
▽ More
Vibrations in materials and nanostructures at sufficiently high temperatures result in anharmonic atomic displacements, which leads to new phenomena such as thermal expansion and multiphonon scattering processes, with a profound impact on temperature-dependent material properties including thermal conductivity, phonon lifetimes, nonradiative electronic transitions, and phase transitions. Nanoscale momentum-resolved vibrational spectroscopy, which has recently become possible on monochromated scanning-transmission-electron microscopes, is a unique method to probe the underpinnings of these phenomena. Here we report momentum-resolved vibrational spectroscopy in hexagonal boron nitride at temperatures of 300, 800, and 1300 K across three Brillouin zones (BZs) that reveals temperature-dependent phonon energy shifts and demonstrates the presence of strong Umklapp processes. Density-functional-theory calculations of temperature-dependent phonon self-energies reproduce the observed energy shifts and identify the contributing mechanisms.
△ Less
Submitted 13 November, 2023; v1 submitted 20 October, 2023;
originally announced October 2023.
Silicon-carbon bond inversions driven by 60 keV electrons in graphene
Authors:
Toma Susi,
Jani Kotakoski,
Demie Kepaptsoglou,
Clemens Mangler,
Tracy C. Lovejoy,
Ondrej L. Krivanek,
Recep Zan,
Ursel Bangert,
Paola Ayala,
Jannik C. Meyer,
Quentin Ramasse
Abstract:
We demonstrate that 60 keV electron irradiation drives the diffusion of threefold coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probabi…
▽ More
We demonstrate that 60 keV electron irradiation drives the diffusion of threefold coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probability for their occurrence in a good agreement with the simulations. Conversions from three- to fourfold coordinated dopant structures and the subsequent reverse process are significantly less likely than the direct bond inversion. Our results thus provide a model of non-destructive and atomically precise structural modification and detection for two-dimensional materials.
△ Less
Submitted 17 July, 2014; v1 submitted 16 July, 2014;
originally announced July 2014.
