-
Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
Authors:
A. G. Taboada,
A. M. Sánchez,
A. M. Beltrán,
M. Bozkurt,
D. Alonso-Álvarez,
B. Alén,
A. Rivera,
J. M. Ripalda,
J. M. Llorens,
J. Martín-Sánchez,
Y. González,
J. M. Ulloa,
J. M. García,
S. I. Molina,
P. M. Koenraad
Abstract:
We present experimental evidence of Sb incorporation inside InAs/GaA(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum…
▽ More
We present experimental evidence of Sb incorporation inside InAs/GaA(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 microns accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.
△ Less
Submitted 23 January, 2025;
originally announced January 2025.
-
Simplified feedback control system for Scanning Tunneling Microscopy
Authors:
Francisco Martín-Vega,
Víctor Barrena,
Raquel Sánchez-Barquilla,
Marta Fernández-Lomana,
José Benito Llorens,
Beilun Wu,
Antón Fente,
David Perconte Duplain,
Ignacio Horcas,
Raquel López,
Javier Blanco,
Juan Antonio Higuera,
Samuel Mañas-Valero,
Na Hyun Jo,
Juan Schmidt,
Paul C. Canfield,
Gabino Rubio-Bollinger,
José Gabriel Rodrigo,
Edwin Herrera,
Isabel Guillamón,
Hermann Suderow
Abstract:
A Scanning Tunneling Microscope (STM) is one of the most important scanning probe tools available to study and manipulate matter at the nanoscale. In a STM, a tip is scanned on top of a surface with a separation of a few Å. Often, the tunneling current between tip and sample is maintained constant by modifying the distance between the tip apex and the surface through a feedback mechanism acting on…
▽ More
A Scanning Tunneling Microscope (STM) is one of the most important scanning probe tools available to study and manipulate matter at the nanoscale. In a STM, a tip is scanned on top of a surface with a separation of a few Å. Often, the tunneling current between tip and sample is maintained constant by modifying the distance between the tip apex and the surface through a feedback mechanism acting on a piezoelectric transducer. This produces very detailed images of the electronic properties of the surface. The feedback mechanism is nearly always made using a digital processing circuit separate from the user computer. Here we discuss another approach, using a computer and data acquisition through the USB port. We find that it allows succesful ultra low noise studies of surfaces at cryogenic temperatures. We show results on different compounds, a type II Weyl semimetal (WTe$_2$), a quasi two-dimensional dichalcogenide superconductor (2H-NbSe$_2$), a magnetic Weyl semimetal (Co$_3$Sn$_2$S$_2$) and an iron pnictide superconductor (FeSe).
△ Less
Submitted 27 April, 2022;
originally announced April 2022.
-
Anisotropic superconductivity and Fermi surface reconstruction in the spin-vortex antiferromagnetic superconductor CaK(Fe$_{0.95}$Ni$_{0.05}$)$_4$As$_4$
Authors:
José Benito Llorens,
Edwin Herrera,
Víctor Barrena,
Beilun Wu,
Niclas Heinsdorf,
Vladislav Borisov,
Roser Valentí,
William R. Meier,
Sergey Bud'ko,
Paul C. Canfield,
Isabel Guillamón,
Hermann Suderow
Abstract:
High critical temperature superconductivity often occurs in systems where an antiferromagnetic order is brought near $T=0K$ by slightly modifying pressure or doping. CaKFe$_4$As$_4$ is a superconducting, stoichiometric iron pnictide compound showing optimal superconducting critical temperature with $T_c$ as large as $38$ K. Doping with Ni induces a decrease in $T_c$ and the onset of spin-vortex an…
▽ More
High critical temperature superconductivity often occurs in systems where an antiferromagnetic order is brought near $T=0K$ by slightly modifying pressure or doping. CaKFe$_4$As$_4$ is a superconducting, stoichiometric iron pnictide compound showing optimal superconducting critical temperature with $T_c$ as large as $38$ K. Doping with Ni induces a decrease in $T_c$ and the onset of spin-vortex antiferromagnetic order, which consists of spins pointing inwards to or outwards from alternating As sites on the diagonals of the in-plane square Fe lattice. Here we study the band structure of CaK(Fe$_{0.95}$Ni$_{0.05}$)$_4$As$_4$ (T$_c$ = 10 K, T$_N$ = 50 K) using quasiparticle interference with a Scanning Tunneling Microscope (STM) and show that the spin-vortex order induces a Fermi surface reconstruction and a fourfold superconducting gap anisotropy.
△ Less
Submitted 23 September, 2020;
originally announced September 2020.
-
Observation of a gel of quantum vortices in a superconductor at very low magnetic fields
Authors:
José Benito Llorens,
Lior Embon,
Alexandre Correa,
Jesés David González,
Edwin Herrera,
Isabel Guillamón,
Roberto F. Luccas,
Jon Azpeitia,
Federico J. Mompeán,
Mar García-Hernández,
Carmen Munuera,
Jazmín Aragón Sánchez,
Yanina Fasano,
Milorad V. Milosevic,
Hermann Suderow,
Yonathan Anahory
Abstract:
A gel consists of a network of particles or molecules formed for example using the sol-gel process, by which a solution transforms into a porous solid. Particles or molecules in a gel are mainly organized on a scaffold that makes up a porous system. Quantized vortices in type II superconductors mostly form spatially homogeneous ordered or amorphous solids. Here we present high-resolution imaging o…
▽ More
A gel consists of a network of particles or molecules formed for example using the sol-gel process, by which a solution transforms into a porous solid. Particles or molecules in a gel are mainly organized on a scaffold that makes up a porous system. Quantized vortices in type II superconductors mostly form spatially homogeneous ordered or amorphous solids. Here we present high-resolution imaging of the vortex lattice displaying dense vortex clusters separated by sparse or entirely vortex-free regions in $β$-Bi$_2$Pd superconductor. We find that the intervortex distance diverges upon decreasing the magnetic field and that vortex lattice images follow a multifractal behavior. These properties, characteristic of gels, establish the presence of a novel vortex distribution, distinctly different from the well-studied disordered and glassy phases observed in high-temperature and conventional superconductors. The observed behavior is caused by a scaffold of one-dimensional structural defects with enhanced stress close to the defects. The vortex gel might often occur in type-II superconductors at low magnetic fields. Such vortex distributions should allow to considerably simplify control over vortex positions and manipulation of quantum vortex states.
△ Less
Submitted 18 January, 2020; v1 submitted 24 April, 2019;
originally announced April 2019.
-
Topology driven g-factor tuning in type-II quantum dots
Authors:
J. M. Llorens,
V. Lopes-Oliveira,
V. López-Richard,
E. R. Cardozo de Oliveira,
L. Wevior,
J. M. Ulloa,
M. D. Teodoro,
G. E. Marques,
A. García-Cristóbal,
G. Quiang-Hai,
B. Alén
Abstract:
We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type II InAs/GaAsSb quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g-factor which are modulated by the applied bias. The results are explained in the frame of realistic $\mathbf{k}\cdot\mathbf{p}$ and effective…
▽ More
We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type II InAs/GaAsSb quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g-factor which are modulated by the applied bias. The results are explained in the frame of realistic $\mathbf{k}\cdot\mathbf{p}$ and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the InAs/GaAs realm.
△ Less
Submitted 17 April, 2019; v1 submitted 24 October, 2017;
originally announced October 2017.
-
Strain-balanced type-II superlattices for efficient multi-junction solar cells
Authors:
A. Gonzalo,
A. D. Utrilla,
D. F. Reyes,
V. Braza,
J. M. Llorens,
D. Fuertes Marron,
B. Alen,
T. Ben,
D. Gonzalez,
A. Guzman,
A. Hierro,
J. M. Ulloa
Abstract:
We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the spatial separation of Sb and N allows a better control over composition and lattice matching, avoiding the growth problems related to the concomitant presence of bo…
▽ More
We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the spatial separation of Sb and N allows a better control over composition and lattice matching, avoiding the growth problems related to the concomitant presence of both elements in GaAsSbN layers. This approach not only reduces clustering and improves crystal quality and interface abruptness, but also allows for additional control of the effective bandgap in the 1.0-1.15 eV spectral region through the SL period thickness. The optimized SL structure exhibits a type-II band alignment and strong electronic coupling at 0 V. Both effects cooperate to increase the minority carrier collection and leads to a net strong enhancement of the external quantum efficiency (EQE) under photovoltaic conditions with respect to bulk layers of equivalent thickness.
△ Less
Submitted 21 December, 2016; v1 submitted 15 December, 2016;
originally announced December 2016.
-
Type II InAs/GaAsSb Quantum Dots: Highly Tunable Exciton Geometry and Topology
Authors:
José M. Llorens,
Lukasz Wewior,
Edson R. Cardozo de Oliveira,
José M. Ulloa,
Antonio D. Utrilla,
Álvaro Guzmán,
Adrián Hierro,
Benito Alén
Abstract:
External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuous…
▽ More
External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.
△ Less
Submitted 13 November, 2015; v1 submitted 8 June, 2015;
originally announced June 2015.
-
Strain driven migration of In during the growth of InAs/GaAs quantum posts
Authors:
D. Alonso-Álvarez,
B. Alén,
J. M. Ripalda,
A. Rivera,
A. G. Taboada,
J. M. Llorens,
Y. González,
L. González,
F. Briones
Abstract:
Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nano…
▽ More
Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nanostructures.
△ Less
Submitted 8 September, 2013; v1 submitted 8 August, 2011;
originally announced August 2011.
-
In-situ accumulated stress measurements: application to strain balanced quantum dots and quantum posts
Authors:
D. Alonso-Álvarez.,
B. Alén,
J. M. Ripalda,
A. Rivera,
A. G. Taboada,
J. M. Llorens,
Y. González,
L. González,
F. Briones
Abstract:
In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum posts. The comparison of these results with simulations and other strain balanced criteria commonly used indicate that it is necessary to consider the kinematics of the process, not only the nominal values for the deposite…
▽ More
In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum posts. The comparison of these results with simulations and other strain balanced criteria commonly used indicate that it is necessary to consider the kinematics of the process, not only the nominal values for the deposited materials. We find that the substrate temperature plays a major role on the compensation process and it is necessary to take it into account in order to achieve the optimum compensation conditions. The application of the technique to quantum posts has allowed us to fabricate nanostructures of exceptional length (120 nm). In situ accumulated measurements show that, even in shorter nanostrcutures, relaxation processes can be inhibited with the resulting increase in the material quality.
△ Less
Submitted 24 February, 2011;
originally announced February 2011.
-
Strain balanced quantum posts
Authors:
D. Alonso-Álvarez,
B. Alén,
J. M. Ripalda,
J. Llorens,
A. G. Taboada,
F. Briones,
M. A. Roldán,
J. Hernández-Saz,
D. Hernández-Maldonado,
M. Herrera,
S. I. Molina
Abstract:
Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here we present a strain compensa…
▽ More
Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy.
△ Less
Submitted 7 March, 2011; v1 submitted 22 February, 2011;
originally announced February 2011.
