Showing 1–13 of 13 results for author: Linderalv, C

Identifying high-energy electronic states of NV$^-$ centers in diamond

Authors: Minh Tuan Luu, Christopher Linderälv, Zsolt Benedek, Ádám Ganyecz, Gergely Barcza, Viktor Ivády, Ronald Ulbricht

Abstract: The negatively charged nitrogen-vacancy center in diamond is a prototype photoluminescent point defect spin qubit with promising quantum technology applications, enabled by its efficient optical spin polarization and readout. Its low-lying electronic states and optical spin polarization cycle have been well characterized over decades, establishing it as a benchmark system for state-of-the-art comp… ▽ More The negatively charged nitrogen-vacancy center in diamond is a prototype photoluminescent point defect spin qubit with promising quantum technology applications, enabled by its efficient optical spin polarization and readout. Its low-lying electronic states and optical spin polarization cycle have been well characterized over decades, establishing it as a benchmark system for state-of-the-art computational methods in point defect research. While the optical cycle is well understood, a comprehensive energetic analysis of higher-lying states has received less attention until recently. In this joint experimental theoretical study, we identify and characterize five high-energy states beyond those involved in the optical cycle. Using transient absorption spectroscopy, we determine their transition energies and relative oscillator strengths. Additionally, we perform two independent numerical studies employing two state-of-the-art post-DFT methods to support the experimental findings and assign energy levels. These results enhance our understanding of the NV center's energy spectrum and providing a broader reference for benchmarking high-level first-principles methods. △ Less

Submitted 6 March, 2025; originally announced March 2025.

Comments: 7 pages, 4 figures, 1 table, and supplementary material

Optical line shapes of color centers in solids from classical autocorrelation functions

Authors: Christopher Linderälv, Nicklas Österbacka, Julia Wiktor, Paul Erhart

Abstract: Color centers play key roles in applications, including, e.g., solid state lighting and quantum information technology, for which the coupling between their optical and vibrational properties is crucial. Established methodologies for predicting the optical lineshapes of such emitters rely on the generating function (GF) approach and impose tight constraints on the shape of and relationship between… ▽ More Color centers play key roles in applications, including, e.g., solid state lighting and quantum information technology, for which the coupling between their optical and vibrational properties is crucial. Established methodologies for predicting the optical lineshapes of such emitters rely on the generating function (GF) approach and impose tight constraints on the shape of and relationship between the ground and excited state landscapes, which limits their application range. Here, we describe an approach based on direct sampling of the underlying auto-correlation functions through molecular dynamics simulations (MD-ACF) that overcomes these restrictions. The energy landscapes are represented by a machine-learned potential, which provides an accurate yet efficient description of both the ground and excited state landscapes through a single model, guaranteeing size-consistent predictions. We apply this methodology to the (VSiVC)kk(0) divacancy defect in 4H-SiC, a prototypical color center, which has been studied both experimentally and theoretically. We demonstrate that at low temperatures the present MD-ACF approach yields predictions in agreement with earlier GF calculations. Unlike the latter it is, however, also applicable at high temperatures as it is not subject to the same limitations, especially with respect to handling of anharmonicity, and can be applied to study non-crystalline materials. While we discuss remaining challenges and possible extensions, the methodology presented here already holds the potential to substantially widen the range of computational predictions of the optical properties of color centers and related defects, especially for cases with pronounced anharmonicity and/or large differences between the initial and final states. △ Less

Submitted 13 August, 2024; originally announced August 2024.

Comments: 12 pages, 6 figures

Tuning the lattice thermal conductivity in van-der-Waals structures through rotational (dis)ordering

Authors: Fredrik Eriksson, Erik Fransson, Christopher Linderälv, Zheyong Fan, Paul Erhart

Abstract: It has recently been demonstrated that MoS2 with irregular interlayer rotations can achieve an extreme anisotropy in the lattice thermal conductivity (LTC), which is for example of interest for applications in waste heat management in integrated circuits. Here, we show by atomic scale simulations based on machine-learned potentials that this principle extends to other two-dimensional materials inc… ▽ More It has recently been demonstrated that MoS2 with irregular interlayer rotations can achieve an extreme anisotropy in the lattice thermal conductivity (LTC), which is for example of interest for applications in waste heat management in integrated circuits. Here, we show by atomic scale simulations based on machine-learned potentials that this principle extends to other two-dimensional materials including C and BN. In all three materials introducing rotational disorder drives the through-plane LTC to the glass limit, while the in-plane LTC remains almost unchanged compared to the ideal bulk materials. We demonstrate that the ultralow through-plane LTC is connected to the collapse of their transverse acoustic modes in the through-plane direction. Furthermore, we find that the twist angle in periodic moiré structures representing rotational order provides an efficient means for tuning the through-plane LTC that operates for all chemistries considered here. The minimal through-plane LTC is obtained for angles between 1 and 4 degree depending on the material, with the biggest effect in MoS2. The angular dependence is correlated with the degree of stacking disorder in the materials, which in turn is connected to the slip surface. This provides a simple descriptor for predicting the optimal conditions at which the LTC is expected to become minimal. △ Less

Submitted 7 October, 2023; v1 submitted 14 April, 2023; originally announced April 2023.

Comments: 10 pages, 6 figures

Journal ref: ACS Nano 17, 25565 (2023)

The moiré potential in twisted transition metal dichalcogenide bilayers

Authors: Christopher Linderälv, Joakim Hagel, Samuel Brem, Ermin Malic, Paul Erhart

Abstract: Moiré superlattices serve as a playground for emerging phenomena, such as localization of band states, superconductivity, and localization of excitons. These superlattices are large and are often modeled in the zero angle limit, which obscures the effect of finite twist angles. Here, by means of first-principles calculations we quantify the twist-angle dependence of the moiré potential in the MoS… ▽ More Moiré superlattices serve as a playground for emerging phenomena, such as localization of band states, superconductivity, and localization of excitons. These superlattices are large and are often modeled in the zero angle limit, which obscures the effect of finite twist angles. Here, by means of first-principles calculations we quantify the twist-angle dependence of the moiré potential in the MoS$_2$ homobilayer and identify the contributions from the constituent elements of the moiré potential. Furthermore, by considering the zero-angle limit configurations, we show that the moiré potential is rather homogeneous across the transition metal dichalcogenides (TMDs) and briefly discuss the separate effects of potential shifts and hybridization on the bilayer hybrid excitons. We find that the moiré potential in TMDs exhibits both an electrostatic component and a hybridization component, which are intertwined and have different relative strengths in different parts of the Brillouin zone. The electrostatic component of the moiré potential is a varying dipole field, which has a strong twist angle dependence. In some cases, the hybridization component can be interpreted as a tunneling rate but the interpretation is not generally applicable over the full Brillouin zone. △ Less

Submitted 31 May, 2022; originally announced May 2022.

Comments: 9 pages, 10 figures

High-throughput characterization of transition metal dichalcogenide alloys: Thermodynamic stability and electronic band alignment

Authors: Christopher Linderälv, J. Magnus Rahm, Paul Erhart

Abstract: Alloying offers a way to tune many of the properties of the transition metal dichalcogenide (TMD) monolayers. While these systems in many cases have been thoroughly investigated previously, the fundamental understanding of critical temperatures, phase diagrams and band edge alignment is still incomplete. Based on first principles calculations and alloy cluster expansions we compute the phase diagr… ▽ More Alloying offers a way to tune many of the properties of the transition metal dichalcogenide (TMD) monolayers. While these systems in many cases have been thoroughly investigated previously, the fundamental understanding of critical temperatures, phase diagrams and band edge alignment is still incomplete. Based on first principles calculations and alloy cluster expansions we compute the phase diagrams 72 TMD monolayer alloys and classify the mixing behavior. We show that ordered phases in general are absent at room temperature but that there exists some alloys, which have a stable Janus phase at room temperature. Furthermore, for a subset of these alloys, we quantify the band edge bowing and show that the band edge positions for the mixing alloys can be continuously tuned in the range set by the boundary phases. △ Less

Submitted 24 April, 2022; originally announced April 2022.

Comments: 10 pages, 6 figures

Journal ref: Chemistry of Materials 34, 9364 (2022)

Exciton landscape in van der Waals heterostructures

Authors: Joakim Hagel, Samuel Brem, Christopher Linderälv, Paul Erhart, Ermin Malic

Abstract: van der Waals heterostructures consisting of vertically stacked transition-metal dichalcogenides (TMDs) exhibit a rich landscape of bright and dark intra- and interlayer excitons. In spite of a growing literature in this field of research, the type of excitons dominating optical spectra in different van der Waals heterostructures has not yet been well established. The spectral position of exciton… ▽ More van der Waals heterostructures consisting of vertically stacked transition-metal dichalcogenides (TMDs) exhibit a rich landscape of bright and dark intra- and interlayer excitons. In spite of a growing literature in this field of research, the type of excitons dominating optical spectra in different van der Waals heterostructures has not yet been well established. The spectral position of exciton states depends strongly on the strength of hybridization and energy renormalization due to the periodic moiré potential. Combining exciton density-matrix formalism and density-functional theory, we shed light on the exciton landscape in TMD homo- and heterobilayers at different stackings. This allows us to identify on a microscopic footing the energetically lowest-lying exciton state for each material and stacking. Furthermore, we disentangle the contribution of hybridization and layer polarization-induced alignment shifts of dark and bright excitons in photoluminescence spectra. By revealing the exciton landscape in van der Waals heterostructures, our work provides the basis for further studies of the optical, dynamical, and transport properties of this technologically promising class of nanomaterials. △ Less

Submitted 18 January, 2022; v1 submitted 22 September, 2021; originally announced September 2021.

Comments: 15 pages, 9 figures

Journal ref: Physical Review Research 3, 043217 (2021)

Photoluminescence Lineshapes for Color Centers in Silicon Carbide from Density Functional Theory Calculations

Authors: Arsalan Hashemi, Christopher Linderalv, Arkady V. Krasheninnikov, Tapio Ala-Nissila, Paul Erhart, Hannu-Pekka Komsa

Abstract: Silicon carbide with optically and magnetically active point defects offers unique opportunities for quantum technology applications. Since interaction with these defects commonly happens through optical excitation and de-excitation, a complete understanding of their light-matter interaction in general and optical signatures, in particular, is crucial. Here, we employ quantum mechanical density fu… ▽ More Silicon carbide with optically and magnetically active point defects offers unique opportunities for quantum technology applications. Since interaction with these defects commonly happens through optical excitation and de-excitation, a complete understanding of their light-matter interaction in general and optical signatures, in particular, is crucial. Here, we employ quantum mechanical density functional theory calculations to investigate the photoluminescence lineshapes of selected, experimentally observed color centers (including single vacancies, double vacancies, and vacancy impurity pairs) in 4H-SiC. The analysis of zero-phonon lines as well as Huang-Rhys and Debye-Waller factors are accompanied by a detailed study of the underlying lattice vibrations. We show that the defect lineshapes are governed by strong coupling to bulk phonons at lower energies and localized vibrational modes at higher energies. Generally, good agreement to the available experimental data is obtained, and thus we expect our theoretical work to be beneficial for the identification of defect signatures in the photoluminescence spectra and thereby advance the research in quantum photonics and quantum information processing. △ Less

Submitted 4 October, 2020; originally announced October 2020.

Comments: 8 pages

Journal ref: Phys. Rev. B 103, 125203 (2021)

Luminescence quenching via deep defect states: A recombination pathway via oxygen vacancies in Ce-doped YAG

Authors: Christopher Linderälv, Daniel Åberg, Paul Erhart

Abstract: Luminescence quenching via non-radiative recombination channels limits the efficiency of optical materials such as phosphors and scintillators and therefore has implications for conversion efficiency and device lifetimes. In materials such as Ce-doped yttrium aluminum garnet (YAG:Ce), quenching shows a strong dependence on both temperature and activator concentration, limiting the ability to fabri… ▽ More Luminescence quenching via non-radiative recombination channels limits the efficiency of optical materials such as phosphors and scintillators and therefore has implications for conversion efficiency and device lifetimes. In materials such as Ce-doped yttrium aluminum garnet (YAG:Ce), quenching shows a strong dependence on both temperature and activator concentration, limiting the ability to fabricate high-intensity white-light emitting diodes with high operating temperatures. Here, we reveal by means of first-principles calculations an efficient recombination mechanism in YAG:Ce that involves oxygen vacancies and gives rise to thermally activated concentration quenching. We demonstrate that the key requirements for this mechanism to be active are localized states with strong electron-phonon coupling. These conditions are commonly found for intrinsic defects such as anion vacancies in wide band-gap materials. The present findings are therefore relevant to a broad class of optical materials and shine light on thermal quenching mechanisms in general. △ Less

Submitted 6 December, 2020; v1 submitted 13 August, 2020; originally announced August 2020.

Comments: 8 pages, 6 figures

Journal ref: Chemistry of Materials 33, 73 (2021)

Vibrational signatures for the identification of single-photon emitters in hexagonal boron nitride

Authors: Christopher Linderälv, Witlef Wieczorek, Paul Erhart

Abstract: Color centers in h-BN are among the brightest emission centers known yet the origins of these emission centers are not well understood. Here, using first-principles calculations in combination with the generating function method, we systematically elucidate the coupling of specific defects to the vibrational degrees of freedom. We show that the lineshape of many defects exhibits strong coupling to… ▽ More Color centers in h-BN are among the brightest emission centers known yet the origins of these emission centers are not well understood. Here, using first-principles calculations in combination with the generating function method, we systematically elucidate the coupling of specific defects to the vibrational degrees of freedom. We show that the lineshape of many defects exhibits strong coupling to high frequency phonon modes and that C$_{\text{N}}$, C$_{\text{B}}$, C$_{\text{B}}$-C$_{\text{N}}$ dimer and V$_{\text{B}}$ can be associated with experimental lineshapes. Our detailed theoretical study serves as a guide to identify optically active defects in h-BN that can suit specific applications in photonic-based quantum technologies, such as single photon emitters, hybrid spin-photon interfaces, or spin-mechanics interfaces. △ Less

Submitted 13 January, 2021; v1 submitted 13 August, 2020; originally announced August 2020.

Comments: 14 pages, 9 figures

Journal ref: Physical Review B 103, 115421 (2021)

Tunable Phases of Moiré Excitons in van der Waals Heterostructures

Authors: Samuel Brem, Christopher Linderälv, Paul Erhart, Ermin Malic

Abstract: Stacking monolayers of transition metal dichalcogenides into a heterostructure with a finite twist-angle gives rise to artificial moiré superlattices with a tunable periodicity. As a consequence, excitons experience a periodic potential, which can be exploited to tailor optoelectronic properties of these materials. While recent experimental studies have confirmed twist-angle dependent optical spec… ▽ More Stacking monolayers of transition metal dichalcogenides into a heterostructure with a finite twist-angle gives rise to artificial moiré superlattices with a tunable periodicity. As a consequence, excitons experience a periodic potential, which can be exploited to tailor optoelectronic properties of these materials. While recent experimental studies have confirmed twist-angle dependent optical spectra, the microscopic origin of moiré exciton resonances has not been fully clarified yet. Here, we combine first principle calculations with the excitonic density matrix formalism to study transitions between different moiré exciton phases and their impact on optical properties of the twisted MoSe$_2$/WSe$_2$ heterostructure. At angles smaller than 2$^{\circ}$ we find flat, moiré trapped states for inter- and intralayer excitons. This moiré exciton phase drastically changes into completely delocalized states already at 3$^{\circ}$. We predict a linear and quadratic twist-angle dependence of excitonic resonances for the moiré-trapped and delocalized exciton phase, respectively. Our work provides microscopic insights opening the possibility to tailor moiré exciton phases in van der Waals superlattices. △ Less

Submitted 11 August, 2020; originally announced August 2020.

Impact of strain on the excitonic linewidth in transition metal dichalcogenides

Authors: Zahra Khatibi, Maja Feierabend, Malte Selig, Samuel Brem, Christopher Linderälv, Paul Erhart, Ermin Malic

Abstract: Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. In particular, strain can be exploited as a tool to control the optical response of TMDs. However, the role of excitonic effects under strain has not been fully understood yet. Utilizing the strain-induced modification of electron and phonon dispersion obtained by… ▽ More Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. In particular, strain can be exploited as a tool to control the optical response of TMDs. However, the role of excitonic effects under strain has not been fully understood yet. Utilizing the strain-induced modification of electron and phonon dispersion obtained by first principle calculations, we present in this work microscopic insights into the strain-dependent optical response of various TMD materials. In particular, we explain recent experiments on the change of excitonic linewidths in strained TMDs and predict their behavior for tensile and compressive strain at low temperatures. △ Less

Submitted 19 June, 2018; originally announced June 2018.

Comments: 7 pages, 7 figures

Journal ref: 2D Mater. 6 015015 (2019)

Interlayer exciton dynamics in van der Waals heterostructures

Authors: Simon Ovesen, Samuel Brem, Christopher Linderälv, Mikael Kuisma, Paul Erhart, Malte Selig, Ermin Malic

Abstract: Exciton binding energies of hundreds of meV and strong light absorption in the optical frequency range make transition metal dichalcogenides (TMDs) promising for novel optoelectronic nanodevices. In particular, atomically thin TMDs can be stacked to heterostructures enabling the design of new materials with tailored properties. The strong Coulomb interaction gives rise to interlayer excitons, wher… ▽ More Exciton binding energies of hundreds of meV and strong light absorption in the optical frequency range make transition metal dichalcogenides (TMDs) promising for novel optoelectronic nanodevices. In particular, atomically thin TMDs can be stacked to heterostructures enabling the design of new materials with tailored properties. The strong Coulomb interaction gives rise to interlayer excitons, where electrons and holes are spatially separated in different layers. In this work, we reveal the microscopic processes behind the formation, thermalization and decay of these fundamentally interesting and technologically relevant interlayer excitonic states. In particular, we present for the exemplary MoSe$_2$-WSe$_2$ heterostructure the interlayer exciton binding energies and wave functions as well as their time- and energy-resolved dynamics. Finally, we predict the dominant contribution of interlayer excitons to the photoluminescence of these materials. △ Less

Submitted 23 April, 2018; originally announced April 2018.

Comments: 7 pages, 6 figures, 1 table

Resistivity Anomaly in Weyl Semimetal candidate Molybdenum Telluride

Authors: Dhavala Suri, Christopher Linderalv, Bogdan Karpiak, Linnea Anderson, Sandeep Kumar Singh, Andre Dankert, F. C. Chou, Raman Sankar, F. C. Chou, Paul Erhart, Saroj P. Dash, R. S. Patel

Abstract: The Weyl semi-metal candidate MoTe$_{2}$ is expected to exhibit a range of exotic electronic transport properties. It exhibits a structural phase transition near room temperature that is evident in the thermal hysteresis in resistivity and thermopower (Seebeck coefficient) as well as large spin-orbit interaction. Here, we also document a resistivity anomaly of up to 13% in the temperature window b… ▽ More The Weyl semi-metal candidate MoTe$_{2}$ is expected to exhibit a range of exotic electronic transport properties. It exhibits a structural phase transition near room temperature that is evident in the thermal hysteresis in resistivity and thermopower (Seebeck coefficient) as well as large spin-orbit interaction. Here, we also document a resistivity anomaly of up to 13% in the temperature window between 25 and 50 K, which is found to be strongly anisotropic. Based on the experimental data in conjunction with density functional theory calculations, we conjecture that the anomaly can be related to the presence of defects in the system. These findings open opportunities for further investigations and understanding of the transport behavior in these newly discovered semi-metallic layered systems. △ Less

Submitted 16 January, 2018; originally announced January 2018.