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Neutron Scattering Signature of Phonon Renormalization in Nickel (II) Oxide
Authors:
Qiyang Sun,
Bin Wei,
Yaokun Su,
Hillary Smith,
Jiao Y. Y. Lin,
Douglas L. Abernathy,
Chen Li
Abstract:
The physics of mutual interaction of phonon quasiparticles with electronic spin degrees of freedom, leading to unusual transport phenomena of spin and heat, has been a subject of continuing interests for decades. Despite its pivotal role in transport processes, the effect of spin-phonon coupling on the phonon system, especially acoustic phonon properties, has so far been elusive. By means of inela…
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The physics of mutual interaction of phonon quasiparticles with electronic spin degrees of freedom, leading to unusual transport phenomena of spin and heat, has been a subject of continuing interests for decades. Despite its pivotal role in transport processes, the effect of spin-phonon coupling on the phonon system, especially acoustic phonon properties, has so far been elusive. By means of inelastic neutron scattering and first-principles calculations, anomalous scattering spectral intensity from acoustic phonons was identified in the exemplary collinear antiferromagnetic nickel (II) oxide, unveiling strong spin-lattice correlations that renormalize the polarization of acoustic phonon. In particular, a clear magnetic scattering signature of the measured neutron scattering intensity from acoustic phonons is demonstrated by its momentum transfer and temperature dependences. The anomalous scattering intensity is successfully modeled with a modified magneto-vibrational scattering cross section, suggesting the presence of spin precession driven by phonon. The renormalization of phonon eigenvector is indicated by the observed "geometry-forbidden" neutron scattering intensity from transverse acoustic phonon. Importantly, the eigenvector renormalization cannot be explained by magnetostriction but instead, it could result from the coupling between phonon and local magnetization of ions.
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Submitted 13 July, 2022; v1 submitted 16 August, 2021;
originally announced August 2021.
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Unidirectional ripplopolaron charge transport in a three-terminal microchannel device
Authors:
A. O. Badrutdinov,
D. G. Rees,
J. Y. Lin,
A. V. Smorodin,
D. Konstantinov
Abstract:
We study the transport of surface electrons on superfluid helium through a microchannel structure in which the charge flow splits into two branches, one flowing straight and one turned at 90 degrees. According to Ohm law, an equal number of charges should flow into each branch. However, when the electrons are dressed by surface excitations (ripplons) to form polaron-like particles with sufficientl…
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We study the transport of surface electrons on superfluid helium through a microchannel structure in which the charge flow splits into two branches, one flowing straight and one turned at 90 degrees. According to Ohm law, an equal number of charges should flow into each branch. However, when the electrons are dressed by surface excitations (ripplons) to form polaron-like particles with sufficiently large effective mass, all the charge follows the straight path due to momentum conservation. This surface-wave induced transport is analogous to the motion of electrons coupled to surface acoustic waves in semiconductor 2DEGs.
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Submitted 21 March, 2020;
originally announced March 2020.
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Observation of Optical Gain in Er-Doped GaN Epilayers
Authors:
V. X. Ho,
Y. Wang,
B. Ryan,
L. Patrick,
H. X. Jiang,
J. Y. Lin,
N. Q. Vinh
Abstract:
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN epilayers prepared by metal-organic chemical vapor deposition. Using the variable stripe technique, the observation of the stimulated emission has been demonstra…
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Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN epilayers prepared by metal-organic chemical vapor deposition. Using the variable stripe technique, the observation of the stimulated emission has been demonstrated through characteristic features of threshold behavior of emission intensity as functions of pump intensity, excitation length, and spectral linewidth narrowing. Using the variable stripe setup, the optical gain up to 75 cm-1 has been obtained in the GaN:Er epilayers. The near infrared lasing from GaN semiconductor opens up new possibilities for extended functionalities and integration capabilities for optoelectronic devices.
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Submitted 10 February, 2020;
originally announced February 2020.
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Topological corner modes in a brick lattice with nonsymmorphic symmetry
Authors:
Yuhan Liu,
Yuzhu Wang,
Nai Chao Hu,
Jun Yu Lin,
Ching Hua Lee,
Xiao Zhang
Abstract:
The quest for new realizations of higher-order topological system has garnered much recent attention. In this work, we propose a paradigmatic brick lattice model where corner modes requires protection by nonsymmorphic symmetry in addition to two commuting mirror symmetries. Unlike the well-known square corner mode lattice, it has an odd number of occupied bands, which necessitates a different defi…
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The quest for new realizations of higher-order topological system has garnered much recent attention. In this work, we propose a paradigmatic brick lattice model where corner modes requires protection by nonsymmorphic symmetry in addition to two commuting mirror symmetries. Unlike the well-known square corner mode lattice, it has an odd number of occupied bands, which necessitates a different definition for the $\mathbb Z_2\times \mathbb Z_2$ topological invariant. By studying both the quadrupolar polarization and effective edge model, our study culminates in a phase diagram containing two distinct topological regimes. Our brick lattice corner modes can be realized in a RLC circuit setup and detected via collossal "topolectrical" resonances.
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Submitted 31 December, 2018;
originally announced December 2018.
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Transport properties of a quasi-1D Wigner Solid on liquid helium confined in a microchannel with periodic potential
Authors:
J. Y. Lin,
A. V. Smorodin,
A. O. Badrutdinov,
D. Konstantinov
Abstract:
We present transport measurements in a quasi-1D system of surface electrons on liquid helium confined in a 101-$μ$m long and 5-$μ$m wide microchannel where an electrostatic potential with periodicity of $1$-$μ$m along the channel is introduced. In particular, we investigate the influence of such a potential on the nonlinear transport of quasi-1D Wigner Solid (WS) by varying the amplitude of the pe…
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We present transport measurements in a quasi-1D system of surface electrons on liquid helium confined in a 101-$μ$m long and 5-$μ$m wide microchannel where an electrostatic potential with periodicity of $1$-$μ$m along the channel is introduced. In particular, we investigate the influence of such a potential on the nonlinear transport of quasi-1D Wigner Solid (WS) by varying the amplitude of the periodic potential in a wide range. At zero and small values of amplitude, quasi-1D WS in microchannel shows expected features such as the Bragg-Cherenkov scattering of ripplons and reentrant melting. As the amplitude of potential increases, the above features are strongly suppressed. This behavior suggests loss of the long-range positional order in the electron system, which is reminiscent of the re-entrant melting behaviour due to the lateral confinement of WS in the channel.
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Submitted 2 August, 2018;
originally announced August 2018.
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Frustrated Magnetism in Mott Insulating (V$_{1-x}$Cr$_x$)$_2$O$_3$
Authors:
J. C. Leiner,
H. O. Jeschke,
R. Valenti,
S. Zhang,
A. T. Savici,
J. Y. Y. Lin,
M. B. Stone,
M. D. Lumsden,
Jiawang Hong,
O. Delaire,
Wei Bao,
C. L. Broholm
Abstract:
V2O3 famously features all four combinations of paramagnetic vs antiferromagnetic, and metallic vs insulating states of matter in response to %-level doping, pressure in the GPa range, and temperature below 300 K. Using time-of-flight neutron spectroscopy combined with density functional theory calculations of magnetic interactions, we have mapped and analyzed the inelastic magnetic neutron scatte…
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V2O3 famously features all four combinations of paramagnetic vs antiferromagnetic, and metallic vs insulating states of matter in response to %-level doping, pressure in the GPa range, and temperature below 300 K. Using time-of-flight neutron spectroscopy combined with density functional theory calculations of magnetic interactions, we have mapped and analyzed the inelastic magnetic neutron scattering cross section over a wide range of energy and momentum transfer in the chromium stabilized antiferromagnetic and paramagnetic insulating phases (AFI & PI). Our results reveal an important magnetic frustration and degeneracy of the PI phase which is relieved by the rhombohedral to monoclinic transition at $T_N=185$ K due to a significant magneto-elastic coupling. This leads to the recognition that magnetic frustration is an inherent property of the paramagnetic phase in $\rm (V_{1-x}Cr_x)_2O_3$ and plays a key role in suppressing the magnetic long range ordering temperature and exposing a large phase space for the paramagnetic Mott metal-insulator transition to occur.
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Submitted 22 February, 2019; v1 submitted 23 April, 2018;
originally announced April 2018.
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Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region
Authors:
V. X. Ho,
T. M. Al tahtamouni,
H. X. Jiang,
J. Y. Lin,
J. M. Zavada,
N. Q. Vinh
Abstract:
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient light emission from silicon in the extending the silicon technology into fully integrated optoelectronic circuits. Here, we report the realization of…
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Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient light emission from silicon in the extending the silicon technology into fully integrated optoelectronic circuits. Here, we report the realization of room-temperature stimulated emission in the technologically crucial 1.5 micron wavelength range from Er-doped GaN multiple-quantum wells on silicon and sapphire. Employing the well-acknowledged variable stripe technique, we have demonstrated an optical gain up to 170 cm-1 in the multiple-quantum well structures. The observation of the stimulated emission is accompanied by the characteristic threshold behavior of emission intensity as a function of pump fluence, spectral linewidth narrowing and excitation length. The demonstration of room-temperature lasing at the minimum loss window of optical fibers and in the eye-safe wavelength region of 1.5 micron are highly sought-after for use in many applications including defense, industrial processing, communication, medicine, spectroscopy and imaging. As the synthesis of Er-doped GaN epitaxial layers on silicon and sapphire has been successfully demonstrated, the results laid the foundation for achieving hybrid GaN-Si lasers providing a new pathway towards full photonic integration for silicon optoelectronics.
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Submitted 28 February, 2018;
originally announced February 2018.
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Entangled multi-component 4D quantum Hall states from photonic crystal defects
Authors:
Xiao Zhang,
Youjian Chen,
Yuzhu Wang,
Jun Yu Lin,
Nai Chao Hu,
Bochen Guan,
Ching Hua Lee
Abstract:
Recently, there has been a drive towards the realization of topological phases beyond conventional electronic materials, including phases defined in more than three dimensions. We propose a versatile and experimentally realistic approach of realizing a large variety of multi-component topological phases in 2D photonic crystals with quasi-periodically modulated defects. With a length scale introduc…
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Recently, there has been a drive towards the realization of topological phases beyond conventional electronic materials, including phases defined in more than three dimensions. We propose a versatile and experimentally realistic approach of realizing a large variety of multi-component topological phases in 2D photonic crystals with quasi-periodically modulated defects. With a length scale introduced by a background resonator lattice, the defects are found to host various effective orbitals of $s$, $p$ and $d$-type symmetries, thus providing a monolithic platform for realizing multi-component topological states without requiring separate internal degrees of freedom in the physical setup. Notably, by coupling the defect modulations diagonally, we report the novel realization of an ``entangled'' 4D QH phase which cannot be factorized into two copies of 2D QH phases, each described by the 1st Chern number. The structure of this non-factorizability can be quantified by a classical entanglement entropy inspired by quantum information theory. In another embodiment, we present 4D p-orbital nodal lines in a nonsymmorphic photonic lattice, hosting boundary states with an exotic manifold. Our simple and versatile approach holds the promise of novel topological optoelectronic and photonic applications such as one-way optical fibers.
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Submitted 29 June, 2019; v1 submitted 23 October, 2017;
originally announced October 2017.
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Non-factorizable 4D quantum Hall state from photonic crystal defects
Authors:
Xiao Zhang,
You Jian Chen,
Bochen Guan,
Jun Yu Lin,
Nai Chao Hu,
Ching Hua Lee
Abstract:
In the recent years, there has been a drive towards the realization of topological phases beyond conventional electronic materials, including phases defined in more than three dimensions. We propose a way to realize 2nd Chern number topological phases with photonic crystals simply made up of defect resonators embedded within a regular lattice of resonators. In particular, through a novel quasiperi…
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In the recent years, there has been a drive towards the realization of topological phases beyond conventional electronic materials, including phases defined in more than three dimensions. We propose a way to realize 2nd Chern number topological phases with photonic crystals simply made up of defect resonators embedded within a regular lattice of resonators. In particular, through a novel quasiperiodic spatial modulations in the defect radii, a defect lattice possessing topologically nontrivial Chern bands with non-abelian berry curvature living in four-dimensional synthetic space is proposed. This system cannot be factorized by a direct product of two 1st Chern number models, distinguishing itself from the Hofstadter model. Such photonic systems can be easily experimentally realized with regular photonic crystals consisting of dielectric rods in air.
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Submitted 12 December, 2017; v1 submitted 27 December, 2016;
originally announced December 2016.
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Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
Authors:
V. X. Ho,
T. V. Dao,
H. X. Jiang,
J. Y. Lin,
J. M. Zavada,
S. A. McGill,
N. Q. Vinh
Abstract:
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a pic…
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We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a picture of the thermal quenching processes and activation energy levels. By comparing the photoluminescence from Er ions in the epilayer with a reference sample of Er-doped SiO2, we find that the fraction of Er ions that emits photon at 1.54 micron upon a resonant optical excitation is approximately 68%. This result presents a significant step in the realization of GaN:Er epilayers as an optical gain medium at 1.54 micron.
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Submitted 25 November, 2016;
originally announced November 2016.
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A nuclear quantum effect with pure anharmonicity and the anomalous thermal expansion of silicon
Authors:
D. S. Kim,
O. Hellman,
J. Herriman,
H. L. Smith,
J. Y. Y. Lin,
N. Shulumba,
J. L. Niedziela,
C. W. Li,
D. L. Abernathy,
B. Fultz
Abstract:
Despite the widespread use of silicon in modern technology, its peculiar thermal expansion is not well-understood. Adapting harmonic phonons to the specific volume at temperature, the quasiharmonic approximation, has become accepted for simulating the thermal expansion, but has given ambiguous interpretations for microscopic mechanisms. To test atomistic mechanisms, we performed inelastic neutron…
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Despite the widespread use of silicon in modern technology, its peculiar thermal expansion is not well-understood. Adapting harmonic phonons to the specific volume at temperature, the quasiharmonic approximation, has become accepted for simulating the thermal expansion, but has given ambiguous interpretations for microscopic mechanisms. To test atomistic mechanisms, we performed inelastic neutron scattering experiments from 100-1500K on a single-crystal of silicon to measure the changes in phonon frequencies. Our state-of-the-art ab initio calculations, which fully account for phonon anharmonicity and nuclear quantum effects, reproduced the measured shifts of individual phonons with temperature, whereas quasiharmonic shifts were mostly of the wrong sign. Surprisingly, the accepted quasiharmonic model was found to predict the thermal expansion owing to a fortuitous cancellation of contributions from individual phonons.
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Submitted 6 February, 2018; v1 submitted 27 October, 2016;
originally announced October 2016.
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Line nodes, Dirac points and Lifshitz transition in 2D nonsymmorphic photonic crystals
Authors:
Jun Yu Lin,
Nai Chao Hu,
You Jian Chen,
Ching Hua Lee,
Xiao Zhang
Abstract:
Topological phase transitions, which have fascinated generations of physicists, are always demarcated by gap closures. In this work, we propose very simple 2D photonic crystal lattices with gap closure points, i.e. band degeneracies protected by nonsymmorphic symmetry. Our photonic structures are relatively easy to fabricate, consisting of two inequivalent dielectric cylinders per unit cell. Along…
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Topological phase transitions, which have fascinated generations of physicists, are always demarcated by gap closures. In this work, we propose very simple 2D photonic crystal lattices with gap closure points, i.e. band degeneracies protected by nonsymmorphic symmetry. Our photonic structures are relatively easy to fabricate, consisting of two inequivalent dielectric cylinders per unit cell. Along high symmetry directions, they exhibit line degeneracies protected by glide reflection symmetry, which we explicitly demonstrate for $pg,pmg,pgg$ and $p4g$ nonsymmorphic groups. In the presence of time reversal symmetry, they also exhibit point degeneracies (Dirac points) protected by a $Z_2$ topological number associated with crystalline symmetry. Strikingly, the robust protection of $pg$-symmetry allows a Lifshitz transition to a type II Dirac cone across a wide range of experimentally accessible parameters, thus providing a convenient route for realizing anomalous refraction. Further potential applications include a stoplight device based on electrically induced strain that dynamically switches the lattice symmetry from $pgg$ to the higher $p4g$ symmetry. This controls the coalescence of Dirac points and hence the group velocity within the crystal.
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Submitted 18 April, 2017; v1 submitted 21 July, 2016;
originally announced July 2016.
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Light atom quantum oscillations in UC and US
Authors:
Yuen Yiu,
A. A. Aczel,
G. E. Granroth,
D. L. Abernathy,
M. B. Stone,
W. J. L. Buyers,
J. Y. Y. Lin,
G. D. Samolyuk,
G. M. Stocks,
S. E. Nagler
Abstract:
High energy vibrational scattering in the binary systems UC and US is measured using time-of-flight inelastic neutron scattering. A clear set of well-defined peaks equally separated in energy is observed in UC, corresponding to harmonic oscillations of the light C atoms in a cage of heavy U atoms. The scattering is much weaker in US and only a few oscillator peaks are visible. We show how the diff…
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High energy vibrational scattering in the binary systems UC and US is measured using time-of-flight inelastic neutron scattering. A clear set of well-defined peaks equally separated in energy is observed in UC, corresponding to harmonic oscillations of the light C atoms in a cage of heavy U atoms. The scattering is much weaker in US and only a few oscillator peaks are visible. We show how the difference between the materials can be understood by considering the neutron scattering lengths and masses of the lighter atoms. Monte Carlo ray tracing is used to simulate the scattering, with near quantitative agreement with the data in UC, and some differences with US. The possibility of observing anharmonicity and anisotropy in the potentials of the light atoms is investigated in UC. Overall the observed data is well accounted for by considering each light atom as a single atom isotropic quantum harmonic oscillator.
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Submitted 4 August, 2015;
originally announced August 2015.
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Antisite disorder driven spontaneous exchange bias effect in La2-xSrxCoMnO6 (0<x<1)
Authors:
J. Krishna Murthy,
K. D. Chandrasekhar,
H. C. Wu,
H. D. Yang,
J. Y. Lin,
A. Venimadhav
Abstract:
Doping at the rare-earth site by divalent alkaline-earth ions in perovskite lattice has witnessed a variety of magnetic and electronic orders with spatially correlated charge, spin and orbital degrees of freedom. Here, we report an antisite disorder driven spontaneous exchange bias effect as a result of hole carrier (Sr2+) doping in La2-xSrxCoMnO6 (0 < x < 1) double perovskites. X-ray diffraction…
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Doping at the rare-earth site by divalent alkaline-earth ions in perovskite lattice has witnessed a variety of magnetic and electronic orders with spatially correlated charge, spin and orbital degrees of freedom. Here, we report an antisite disorder driven spontaneous exchange bias effect as a result of hole carrier (Sr2+) doping in La2-xSrxCoMnO6 (0 < x < 1) double perovskites. X-ray diffraction and Raman spectroscopy have evidenced an increase in disorder with the increase of Sr content up to x = 0.5 and thereby decreases from x = 0.5 to 1. X-ray absorption spectroscopy has revealed that only Co is present in mixed valent Co2+ and Co3+ states with Sr doping to compensate the charge neutrality. Magnetotransport is strongly correlated with the increase of antisite disorder. The antisite disorder at the B-site interrupts the long-range ferromagnetic order by introducing various magnetic interactions and instigates reentrant glassy dynamics, phase separation and canted type antiferromagnetic behavior with the decrease of temperature. This leads to novel magnetic microstructure with unidirectional anisotropy that causes spontaneous exchange bias effect that can be tuned with the amount of antisite disorder.
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Submitted 1 August, 2015;
originally announced August 2015.
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Excitation Mechanisms of Er Optical Centers in GaN Epilayers
Authors:
D. K. George,
M. Hawkins,
M. McLaren,
H. X. Jiang,
J. Y. Lin,
J. M. Zavada,
N. Q. Vinh
Abstract:
We report direct evidence of two mechanisms responsible for the excitation of optically active Er3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er centers. However,…
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We report direct evidence of two mechanisms responsible for the excitation of optically active Er3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er centers. However, these centers have different photoluminescence spectra, decay dynamics, and excitation cross sections. The isolated Er optical center, which can be excited by either mechanism, has the same decay dynamics, but possesses a much higher cross-section under band-to-band excitation. In contrast, the defect-related Er center can only be excited through band-to-band excitation but has the largest cross-section. These results explain the difficulty in achieving gain in Er doped GaN and indicate new approaches for realization of optical amplification, and possibly lasing, at room temperature.
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Submitted 17 July, 2015;
originally announced July 2015.
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Metamagnetic behavior and effect of field cooling on sharp magnetization jumps in multiferroic Y2CoMnO6
Authors:
J. Krishna Murthy,
K. Devi Chandrasekhar,
H. C. Wu,
H. D. Yang,
J. Y. Lin,
A. Venimadhav
Abstract:
We present sharp magnetization jumps and field induced irreversibility in magnetization in multiferroic Y2CoMnO6. Appearance of magnetic relaxation and field sweep rate dependence of magnetization jumps resemble the martensite like scenario and suggests the coexistence of E*-type antiferromagnetic and ferromagnetic phases at low temperatures. In Y2CoMnO6, the critical field required for the sharp…
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We present sharp magnetization jumps and field induced irreversibility in magnetization in multiferroic Y2CoMnO6. Appearance of magnetic relaxation and field sweep rate dependence of magnetization jumps resemble the martensite like scenario and suggests the coexistence of E*-type antiferromagnetic and ferromagnetic phases at low temperatures. In Y2CoMnO6, the critical field required for the sharp jump can be increased or decreased depening on the magnitude and direction of the cooling field; this is remarkably different from manganites or other metamagnetic materials where the critical field increases irrespective of the direction of the field cooling. The cooling field dependence on the sharp magnetization jumps has been described by considering exchange pinning mechanism at the interface, like in exchange bias model.
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Submitted 13 October, 2014; v1 submitted 31 July, 2014;
originally announced July 2014.
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Metastable giant moments in Gd-implanted GaN, Si, and sapphire
Authors:
X. Wang,
C. Timm,
X. M. Wang,
W. K. Chu,
J. Y. Lin,
H. X. Jiang,
J. Z. Wu
Abstract:
We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800 mu_B, while the moments i…
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We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800 mu_B, while the moments in Gd-implanted Si and sapphire were only slightly smaller. The apparent induced ferromagnetic response was found to be metastable, disappearing after on the order of 50 days at room temperature, except for the implanted sapphire. We argue that our findings support a defect-based picture of magnetism in Gd-implanted semiconductors and insulators.
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Submitted 28 March, 2011;
originally announced March 2011.
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Phonon Density of States of LaFeAsO1-xFx
Authors:
A. D. Christianson,
M. D. Lumsden,
O. Delaire,
M. B. Stone,
D. L. Abernathy,
M. A. McGuire,
A. S. Sefat,
R. Jin,
B. C. Sales,
D. Mandrus,
E. D. Mun,
P. C. Canfield,
J. Y. Y. Lin,
M. Lucas,
M. Kresch,
J. B. Keith,
B. Fultz,
E. A. Goremychkin,
R. J. McQueeney
Abstract:
We have studied the phonon density of states (PDOS) in LaFeAsO1-xFx with inelastic neutron scattering methods. The PDOS of the parent compound(x=0) is very similar to the PDOS of samples optimally doped with fluorine to achieve the maximum Tc (x~0.1). Good agreement is found between the experimental PDOS and first-principle calculations with the exception of a small difference in Fe mode frequen…
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We have studied the phonon density of states (PDOS) in LaFeAsO1-xFx with inelastic neutron scattering methods. The PDOS of the parent compound(x=0) is very similar to the PDOS of samples optimally doped with fluorine to achieve the maximum Tc (x~0.1). Good agreement is found between the experimental PDOS and first-principle calculations with the exception of a small difference in Fe mode frequencies. The PDOS reported here is not consistent with conventional electron-phonon mediated superconductivity.
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Submitted 22 July, 2008;
originally announced July 2008.
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Carbon-doped ZnO: A New Class of Room Temperature Dilute Magnetic Semiconductor
Authors:
H. Pan,
J. B. Yi,
J. Y. Lin,
Y. P. Feng,
J. Ding,
L. H. Van,
J. H. Yin
Abstract:
We report magnetism in carbon doped ZnO. Our first-principles calculations based on density functional theory predicted that carbon substitution for oxygen in ZnO results in a magnetic moment of 1.78 $μ_B$ per carbon. The theoretical prediction was confirmed experimentally. C-doped ZnO films deposited by pulsed laser deposition with various carbon concentrations showed ferromagnetism with Curie…
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We report magnetism in carbon doped ZnO. Our first-principles calculations based on density functional theory predicted that carbon substitution for oxygen in ZnO results in a magnetic moment of 1.78 $μ_B$ per carbon. The theoretical prediction was confirmed experimentally. C-doped ZnO films deposited by pulsed laser deposition with various carbon concentrations showed ferromagnetism with Curie temperatures higher than 400 K, and the measured magnetic moment based on the content of carbide in the films ($1.5 - 3.0 μ_B$ per carbon) is in agreement with the theoretical prediction. The magnetism is due to bonding coupling between Zn ions and doped C atoms. Results of magneto-resistance and abnormal Hall effect show that the doped films are $n$-type semiconductors with intrinsic ferromagnetism. The carbon doped ZnO could be a promising room temperature dilute magnetic semiconductor (DMS) and our work demonstrates possiblity of produing DMS with non-metal doping.
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Submitted 31 October, 2006;
originally announced October 2006.
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Comparative analysis of specific heat of YNi2B2C using nodal and two-gap models
Authors:
C. L. Huang,
J. Y. Lin,
C. P. Sun,
T. K. Lee,
J. D. Kim,
E. M. Choi,
S. I. Lee,
H. D. Yang
Abstract:
The magnetic field dependence of low temperature specific heat in YNi2B2C was measured and analyzed using various pairing order parameters. At zero magnetic field, the two-gap model which has been successfully applied to MgB2 and the point-node model, appear to describe the superconducting gap function of YNi2B2C better than other models based on the isotropic s-wave, the d-wave line nodes, or t…
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The magnetic field dependence of low temperature specific heat in YNi2B2C was measured and analyzed using various pairing order parameters. At zero magnetic field, the two-gap model which has been successfully applied to MgB2 and the point-node model, appear to describe the superconducting gap function of YNi2B2C better than other models based on the isotropic s-wave, the d-wave line nodes, or the s+g wave. The two energy gaps, delta_L=2.67 meV and delta_S=1.19 meV are obtained. The observed nonlinear field dependence of electronic specific heat coefficient, gamma(H)~H0.47, is quantitatively close to gamma(H)~H0.5 expected for nodal superconductivity or can be qualitatively explained using two-gap scenario. Furthermore, the positive curvature in Hc2(T) near Tc is qualitatively similar to that in the other two-gap superconductor MgB2.
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Submitted 13 December, 2005;
originally announced December 2005.
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Dirac quantization condition with the superconducting state
Authors:
Jer Yu Lin
Abstract:
The author argues that the Dirac quantization condition might imply the existence of an undiscovered electromagnetic structure which governs the quantization of the electric charge and the quantization of the magnetic flux in the superconducting state. An experimental set-up which can provide a strong evidence by predicting the discrimination between the magnetic flux generated by the positive a…
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The author argues that the Dirac quantization condition might imply the existence of an undiscovered electromagnetic structure which governs the quantization of the electric charge and the quantization of the magnetic flux in the superconducting state. An experimental set-up which can provide a strong evidence by predicting the discrimination between the magnetic flux generated by the positive and negative electric charge in the superconducting state is also proposed.
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Submitted 14 November, 2002; v1 submitted 10 May, 2002;
originally announced May 2002.
