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Unveiling the Electronic Origin of Anomalous Contact Conductance in Twisted Bilayer Graphene
Authors:
Kevin J. U. Vidarte,
Caio Lewenkopf,
F. Crasto de Lima,
R. Hiroki Miwa,
Felipe Pérez Riffo,
Eric Suárez Morell
Abstract:
This study theoretically investigates the contact conductance in twisted bilayer graphene (TBG), providing a theoretical explanation for recent experimental observations from scanning tunneling microscopy (STM) and conductive atomic force microscopy (c-AFM). These experiments revealed a surprising non-monotonic current pattern as a function of the TBG rotation angle $θ$, with a peak at…
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This study theoretically investigates the contact conductance in twisted bilayer graphene (TBG), providing a theoretical explanation for recent experimental observations from scanning tunneling microscopy (STM) and conductive atomic force microscopy (c-AFM). These experiments revealed a surprising non-monotonic current pattern as a function of the TBG rotation angle $θ$, with a peak at $θ\approx 5^\circ$, a finding that markedly departs from the well-known magic angle TBG behavior. To elucidate this phenomenon, we develop a comprehensive theoretical and computational framework. Our calculations, performed on both relaxed and rigid TBG structures, simulate contact conductance by analyzing the local density of states across a range of biases and rotational angles. Contrary to the current interpretation, our results demonstrate that the maximum conductance at $θ\approx 5^{\rm o}$ is not caused by structural relaxation or AA stacking zone changes. Instead, we attribute this peak to the evolution of the electronic band structure, specifically the shifting of van Hove singularities (vHs) to the Fermi level as the twist angle decreases. We further show that the precise location of this conductance maximum is dependent on the applied bias voltage. This interplay between twist angle, bias, and vHs energy provides a robust explanation for the experimental findings.
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Submitted 26 June, 2025;
originally announced June 2025.
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Kinetic Flat-Histogram Simulations of Non-Equilibrium Stochastic Processes with Continuous and Discontinuous Phase Transitions
Authors:
L. M. C. Alencar,
T. F. A. Alves,
G. A. Alves,
F. W. S. Lima,
A. Macedo-Filho,
R. S. Ferreira
Abstract:
As far as we know, there is no flat-histogram algorithm to sample the stationary distribution of non-equilibrium stochastic processes. The present work addresses this gap by introducing a generalization of the Wang-Landau algorithm, applied to non-equilibrium stochastic processes with local transitions. The main idea is to sample macroscopic states using a kinetic Monte Carlo algorithm to generate…
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As far as we know, there is no flat-histogram algorithm to sample the stationary distribution of non-equilibrium stochastic processes. The present work addresses this gap by introducing a generalization of the Wang-Landau algorithm, applied to non-equilibrium stochastic processes with local transitions. The main idea is to sample macroscopic states using a kinetic Monte Carlo algorithm to generate trial moves, which are accepted or rejected with a probability that depends inversely on the stationary distribution. The stationary distribution is refined through the simulation by a modification factor, leading to convergence toward the true stationary distribution. A visitation histogram is also accumulated, and the modification factor is updated when the histogram satisfies a flatness condition. The stationary distribution is obtained in the limit where the modification factor reaches a threshold value close to unity. To test the algorithm, we compare simulation results for several stochastic processes with theoretically known behavior. In addition, results from the kinetic flat-histogram algorithm are compared with standard exact stochastic simulations. We show that the kinetic flat-histogram algorithm can be applied to phase transitions in stochastic processes with bistability, which describe a wide range of phenomena such as epidemic spreading, population growth, chemical reactions, and consensus formation. With some adaptations, the kinetic flat-histogram algorithm can also be applied to stochastic models on lattices and complex networks.
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Submitted 26 May, 2025;
originally announced May 2025.
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Interacting Virtual Topological Phases in Defect-Rich 2D Materials
Authors:
Felipe Crasto de Lima,
Roberto H. Miwa,
Caio Lewenkopf,
Adalberto Fazzio
Abstract:
We investigate the robustness of {\it virtual} topological states -- topological phases away from the Fermi energy -- against the electron-electron interaction and band filling. As a case study, we employ a realistic model to investigate the properties of vacancy-driven topological phases in transition metal dichalcogenides (TMDs) and establish a connection between the degree of localization of to…
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We investigate the robustness of {\it virtual} topological states -- topological phases away from the Fermi energy -- against the electron-electron interaction and band filling. As a case study, we employ a realistic model to investigate the properties of vacancy-driven topological phases in transition metal dichalcogenides (TMDs) and establish a connection between the degree of localization of topological wave functions, the vacancy density, and the electron-electron interaction strength with the topological phase robustness. We demonstrate that electron-electron interactions play a crucial role in degrading topological phases thereby determining the validity of single-particle approximations for topological insulator phases. Our findings can be naturally extended to {\it virtual} topological phases of a wide range of materials.
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Submitted 8 May, 2025; v1 submitted 11 December, 2024;
originally announced December 2024.
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Reentrant topological phase in half-Heusler compounds
Authors:
Augusto L. Araújo,
Felipe Crasto de Lima,
Adalberto Fazzio
Abstract:
Half-Heusler compounds are known for their various compositions and multifunctional properties including topological phases. In this study, we investigate the topological classification of this class of materials based on the ordering of the $Γ_6$, $Γ_8$ states, and a previously overlooked $Γ_6^*$ state, during an adiabatic expansion process. Using first-principles calculations based on density fu…
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Half-Heusler compounds are known for their various compositions and multifunctional properties including topological phases. In this study, we investigate the topological classification of this class of materials based on the ordering of the $Γ_6$, $Γ_8$ states, and a previously overlooked $Γ_6^*$ state, during an adiabatic expansion process. Using first-principles calculations based on density functional theory, we observed that the non-trivial topology is governed by a three-band mechanism. We provide a simple model derived from $k\cdot p$ Hamiltonian that interprets the topological phase in half-Heusler systems. Additionally, we explore the robustness of the topological phase under tension and a new perspective on the topological nature of half-Heusler compounds.
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Submitted 2 September, 2024;
originally announced September 2024.
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Partial Landau-Zener transitions and applications to qubit shuttling
Authors:
Jonas R. F. Lima,
Guido Burkard
Abstract:
The transition dynamics of two-state systems with time-dependent energy levels, first considered by Landau, Zener, Majorana, and Stückelberg, is one of the basic models in quantum physics and has been used to describe various physical systems. We propose here a generalization of the Landau-Zener (LZ) problem characterized by distinct paths of the instantaneous eigenstates as the system evolves in…
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The transition dynamics of two-state systems with time-dependent energy levels, first considered by Landau, Zener, Majorana, and Stückelberg, is one of the basic models in quantum physics and has been used to describe various physical systems. We propose here a generalization of the Landau-Zener (LZ) problem characterized by distinct paths of the instantaneous eigenstates as the system evolves in time while keeping the instantaneous eigenenergies exactly as in the standard LZ model. We show that these paths play an essential role in the transition probability $P$ between the two states, and can lead to a substantial reduction of $P$, being possible even to achieve $P=0$ in an instructive extreme case, and also to large $P$ even in the absence of any anticrossing point. The partial LZ model can describe valley transition dynamics during charge and spin shuttling in semiconductor quantum dots.
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Submitted 25 June, 2025; v1 submitted 6 August, 2024;
originally announced August 2024.
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Generalized Diffusive Epidemic Process with Permanent Immunity in Two Dimensions
Authors:
V. R. Carvalho,
T. F. A. Alves,
G. A. Alves,
D. S. M. Alencar,
F. W. S. Lima,
A. Macedo-Filho,
R. S. Ferreira
Abstract:
We introduce the generalized diffusive epidemic process, which is a metapopulation model for an epidemic outbreak where a non-sedentary population of walkers can jump along lattice edges with diffusion rates $D_S$ or $D_I$ if they are susceptible or infected, respectively, and recovered individuals possess permanent immunity. Individuals can be contaminated with rate $μ_c$ if they share the same l…
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We introduce the generalized diffusive epidemic process, which is a metapopulation model for an epidemic outbreak where a non-sedentary population of walkers can jump along lattice edges with diffusion rates $D_S$ or $D_I$ if they are susceptible or infected, respectively, and recovered individuals possess permanent immunity. Individuals can be contaminated with rate $μ_c$ if they share the same lattice node with an infected individual and recover with rate $μ_r$, being removed from the dynamics. Therefore, the model does not have the conservation of the active particles composed of susceptible and infected individuals. The reaction-diffusion dynamics are separated into two stages: (i) Brownian diffusion, where the particles can jump to neighboring nodes, and (ii) contamination and recovery reactions. The dynamics are mapped into a growing process by activating lattice nodes with successful contaminations where activated nodes are interpreted as infection sources. In all simulations, the epidemic starts with one infected individual in a lattice filled with susceptibles. Our results indicate a phase transition in the dynamic percolation universality class controlled by the population size, irrespective of diffusion rates $D_S$ and $D_I$ and a subexponential growth of the epidemics in the percolation threshold.
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Submitted 15 July, 2024; v1 submitted 11 July, 2024;
originally announced July 2024.
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Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS$_2$ Heterostructures at Room Temperature
Authors:
Rafael O. Cunha,
Yunier Garcia-Basabe,
Dunieskys G. Larrude,
Matheus Gamino,
Erika N. Lima,
Felipe Crasto de Lima,
Adalberto Fazzio,
Sergio M. Rezende,
Antonio Azevedo,
Joaquim B. S. Mendes
Abstract:
We report experimental investigations of spin-to-charge current conversion and charge transfer dynamics (CT) at the interface of graphene/WS$_2$ van der Waals heterostructure. Pure spin current was produced by the spin precession in the microwave-driven ferromagnetic resonance of a permalloy film (Py-Ni$_{81}$Fe$_{19}$) and injected into the graphene/WS$_2$ heterostructure through the spin pumping…
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We report experimental investigations of spin-to-charge current conversion and charge transfer dynamics (CT) at the interface of graphene/WS$_2$ van der Waals heterostructure. Pure spin current was produced by the spin precession in the microwave-driven ferromagnetic resonance of a permalloy film (Py-Ni$_{81}$Fe$_{19}$) and injected into the graphene/WS$_2$ heterostructure through the spin pumping process. The observed spin-to-charge current conversion in the heterostructure is attributed to inverse Rashba-Edelstein effect (IREE) at the graphene/WS$_2$ interface. Interfacial CT dynamics in this heterostructure was investigated based on the framework of core-hole-clock (CHC) approach. The results obtained from spin pumping and CHC studies show that the spin-to-charge current conversion and charge transfer process are more efficient in the graphene/WS$_2$ heterostructure compared to isolated WS2 and graphene films. The results show that the presence of WS$_2$ flakes improves the current conversion efficiency. These experimental results are corroborated by density functional theory (DFT) calculations, which reveal (i) Rashba spin-orbit splitting of graphene orbitals and (ii) electronic coupling between graphene and WS$_2$ orbitals. This study provides valuable insights for optimizing the design and performance of spintronic devices.
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Submitted 28 May, 2024;
originally announced May 2024.
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Critical Short-Time Behavior of Majority-Vote Model on Scale-Free Networks
Authors:
D. S. M. Alencar,
J. F. S. Neto,
T. F. A. Alves,
F. W. S. Lima,
R. S. Ferreira,
G. A. Alves,
A. Macedo-Filho
Abstract:
We discuss the short-time behavior of the majority vote dynamics on scale-free networks at the critical threshold. We introduce a heterogeneous mean-field theory on the critical short-time behavior of the majority-vote model on scale-free networks. In addition, we also compare the heterogeneous mean-field predictions with extensive Monte Carlo simulations of the short-time dependencies of the orde…
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We discuss the short-time behavior of the majority vote dynamics on scale-free networks at the critical threshold. We introduce a heterogeneous mean-field theory on the critical short-time behavior of the majority-vote model on scale-free networks. In addition, we also compare the heterogeneous mean-field predictions with extensive Monte Carlo simulations of the short-time dependencies of the order parameter and the susceptibility. We obtained a closed expression for the dynamical exponent $z$ and the time correlation exponent $ν_\parallel$. Short-time scaling is compatible with a non-universal critical behavior for $5/2 < γ< 7/2$, and for $γ\geq 7/2$, we have the mean-field Ising criticality with additional logarithmic corrections for $γ=7/2$, in the same way as the stationary scaling.
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Submitted 23 May, 2024;
originally announced May 2024.
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Exploring Topological Transport in Pt$_2$HgSe$_3$ Nanoribbons: Insights for Spintronic Device Integration
Authors:
Rafael L. H. Freire,
F. Crasto de Lima,
Roberto H. Miwa,
A. Fazzio
Abstract:
The discovery of the quantum spin Hall effect led to the exploration of the electronic transport for spintronic devices. Here, we theoretically investigated the electronic conductance in large-gap realistic quantum spin Hall system, Pt$_2$HgSe$_3$ nanoribbons. By an ab initio approach, we found that the edge states present a penetration depth of about $0.9$\,{nm}, which is much smaller than those…
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The discovery of the quantum spin Hall effect led to the exploration of the electronic transport for spintronic devices. Here, we theoretically investigated the electronic conductance in large-gap realistic quantum spin Hall system, Pt$_2$HgSe$_3$ nanoribbons. By an ab initio approach, we found that the edge states present a penetration depth of about $0.9$\,{nm}, which is much smaller than those predicted in other 2D topological systems. Thus, suggesting that Pt$_2$HgSe$_3$ allows the exploitation of topological transport properties in narrow ribbons. Using non-equilibrium Green's functions calculations, we have examined the electron conductivity upon the presence of Se\,$\leftrightarrow$\,Hg antistructure defects randomly distributed in the Pt$_2$HgSe$_3$ scattering region. By considering scattering lengths up to $109$\,nm, we found localization lengths that can surpass $μ$m sizes for narrow nanoribbons ($<9$\,nm). These findings can contribute to further understanding the behavior of topological insulators under realistic conditions and their integration within electronic, spintronic devices.
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Submitted 10 May, 2024;
originally announced May 2024.
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Properties of a Majorana fermion ensemble with exciton-like mass
Authors:
L. E. S. Machado,
F. C. E. Lima,
C. A. S. Almeida
Abstract:
Considering the relativistic scenario, we dedicate our study to the relativistic quantum description of one-dimensional Majorana fermions. Thus, we focus on aspects related to exciton-like particles. Seeking to reach our purpose, one analyzes the relativistic quantum mechanical system characterized by an effective mass distribution. In this context, we adopt an exciton-like position-dependent mass…
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Considering the relativistic scenario, we dedicate our study to the relativistic quantum description of one-dimensional Majorana fermions. Thus, we focus on aspects related to exciton-like particles. Seeking to reach our purpose, one analyzes the relativistic quantum mechanical system characterized by an effective mass distribution. In this context, we adopt an exciton-like position-dependent mass without impurity, i.e., without electromagnetic interactions. From this perspective, one notes results of noteworthy interest as consequences of the theory adopted. For instance, we highlight that, even without interaction, exciton-like Majorana fermions manifest theoretically bound states. Also, we construct a Majorana fermion ensemble with effective mass immersed in a thermal reservoir. That allows for a thorough investigation of the thermodynamic properties of the system. Among the thermodynamic characteristics studied in the canonical ensemble, we focus on the Helmholtz free energy, mean energy, entropy, and heat capacity. The numerical results obtained for these thermodynamic properties corroborate the validity of the Dulong-Petit law for our system.
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Submitted 30 June, 2025; v1 submitted 8 April, 2024;
originally announced April 2024.
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Resonant helical multi-edge transport in Sierpiński carpets
Authors:
M. A. Toloza Sandoval,
A. L. Araújo,
F. Crasto de Lima,
A. Fazzio
Abstract:
In recent years, synthesis and experimental research of fractalized materials has evolved in a paradigmatic crossover with topological phases of matter. We present here a theoretical investigation of the helical edge transport in Sierpinski carpets (SCs), combining the Bernevig-Hughes-Zhang (BHZ) model and the Landauer approach. Starting from a pristine two-dimensional topological insulator (2DTI)…
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In recent years, synthesis and experimental research of fractalized materials has evolved in a paradigmatic crossover with topological phases of matter. We present here a theoretical investigation of the helical edge transport in Sierpinski carpets (SCs), combining the Bernevig-Hughes-Zhang (BHZ) model and the Landauer approach. Starting from a pristine two-dimensional topological insulator (2DTI), according to the BHZ model, our results reveal resonant transport modes when the SC fractal generation reaches the same scale as the space discretization; these modes are analyzed within a contour plot mapping of the local spin-polarized currents, shown spanned and assisted by inner-edge channels. From such a deeply fractalized SC building block, we introduce a rich tapestry formed by superior SC hierarchies, enlightening intricate patterns and unique fingerprints that offer valuable insights into how helical edge transport occurs in these fractal dimensions.
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Submitted 29 January, 2024;
originally announced January 2024.
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Design of spin-orbital-textures in ferromagnetic/topological insulator interfaces
Authors:
A. L. Araújo,
F. Crasto de Lima,
C. H. Lewenkopf,
A. Fazzio
Abstract:
Spin-orbital textures in topological insulators due to the spin locking with the electron momentum, play an important role in spintronic phenomena that arise from the interplay between charge and spin degrees of freedom. We have explored interfaces between a ferromagnetic system (CrI$_3$) and a topological insulator (Bi$_2$Se$_3$) that allow the manipulation of spin-orbital textures. Within an {\i…
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Spin-orbital textures in topological insulators due to the spin locking with the electron momentum, play an important role in spintronic phenomena that arise from the interplay between charge and spin degrees of freedom. We have explored interfaces between a ferromagnetic system (CrI$_3$) and a topological insulator (Bi$_2$Se$_3$) that allow the manipulation of spin-orbital textures. Within an {\it ab initio} approach we have extracted the spin-orbital-textures dependence of experimentally achievable interface designs. The presence of the ferromagnetic system introduces anisotropic transport of the electronic spin and charge. From a parameterized Hamiltonian model we capture the anisotropic backscattering behavior, showing its extension to other ferromagnetic/topological insulator interfaces. We verified that the van der Waals TI/MI interface is an excellent platform for controlling the spin degree of freedom arising from topological states, providing a rich family of unconventional spin texture configurations.
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Submitted 18 November, 2023;
originally announced November 2023.
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Valley splitting depending on the size and location of a silicon quantum dot
Authors:
Jonas R. F. Lima,
Guido Burkard
Abstract:
The valley splitting (VS) of a silicon quantum dot plays an important role for the performance and scalability of silicon spin qubits. In this work we investigate the VS of a SiGe/Si/SiGe heterostructure as a function of the size and location of the silicon quantum dot. We use the effective mass approach to describe a realistic system, which takes into account concentration fluctuations at the Si/…
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The valley splitting (VS) of a silicon quantum dot plays an important role for the performance and scalability of silicon spin qubits. In this work we investigate the VS of a SiGe/Si/SiGe heterostructure as a function of the size and location of the silicon quantum dot. We use the effective mass approach to describe a realistic system, which takes into account concentration fluctuations at the Si/SiGe interfaces and also the interface roughness. We predict that the size of the quantum dot is an important parameter for the enhancement of the VS and it can also induce a transition between the disorder-dominated to deterministic-enhanced regimes. Analyzing how the VS changes when we move the quantum dot in a specific direction, we obtain that the size of the quantum dot can be used to reduce the variability of the VS, which is relevant for charge/spin shuttling.
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Submitted 26 October, 2023;
originally announced October 2023.
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Electronic and spin transport in Bismuthene with magnetic impurities
Authors:
Armando Pezo,
Felipe Crasto de Lima,
Adalberto Fazzio
Abstract:
Topological insulators have remained as candidates for future electronic devices since their first experimental realization in the past decade. The existence of topologically protected edge states could be exploited to generate a robust platform and develop quantum computers. In this work we explore the role of magnetic impurities in the transport properties of topological insulators, in particula…
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Topological insulators have remained as candidates for future electronic devices since their first experimental realization in the past decade. The existence of topologically protected edge states could be exploited to generate a robust platform and develop quantum computers. In this work we explore the role of magnetic impurities in the transport properties of topological insulators, in particular, we study the effect on the edge states conductivity. By means of realistic $\it{ab}$ $\it{initio}$ calculations we simulate the interaction between magnetic adatoms and topological insulators, furthermore, our main goal is to obtain the transport properties for large samples as it would be possible to localize edge states at large scales.
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Submitted 13 September, 2023;
originally announced September 2023.
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Is Kaniadakis $κ$-generalized statistical mechanics general?
Authors:
T. F. A. Alves,
J. F. da Silva Neto,
F. W. S. Lima,
G. A. Alves,
P. R. S. Carvalho
Abstract:
In this Letter we introduce some field-theoretic approach for computing the critical properties of systems undergoing continuous phase transitions governed by the $κ$-generalized statistics, namely $κ$-generalized statistical field theory. In particular, we show, by computations through analytic and simulation results, that the $κ$-generalized Ising-like systems are not capable of describing the n…
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In this Letter we introduce some field-theoretic approach for computing the critical properties of systems undergoing continuous phase transitions governed by the $κ$-generalized statistics, namely $κ$-generalized statistical field theory. In particular, we show, by computations through analytic and simulation results, that the $κ$-generalized Ising-like systems are not capable of describing the nonconventional critical properties of real imperfect crystals, \emph{e. g.} of manganites, as some alternative generalized theory is, namely nonextensive statistical field theory, as shown recently in literature. Although $κ$-Ising-like systems do not depend on $κ$, we show that a few distinct systems do. Thus the $κ$-generalized statistical field theory is not general, \emph{i. e.} it fails to generalize Ising-like systems for describing the critical behavior of imperfect crystals, and must be discarded as one generalizing statistical mechanics. For the latter systems we present the physical interpretation of the theory by furnishing the general physical interpretation of the deformation $κ$-parameter.
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Submitted 11 July, 2023;
originally announced July 2023.
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Substrate suppression of oxidation process in pnictogen monolayers
Authors:
R. L. H. Freire,
F. Crasto de Lima,
A. Fazzio
Abstract:
2D materials present an interesting platform for device designs. However, oxidation can drastically change the system's properties, which need to be accounted for. Through {\it ab initio} calculations, we investigated freestanding and SiC-supported As, Sb, and Bi mono-elemental layers. The oxidation process occurs through an O$_2$ spin-state transition, accounted for within the Landau-Zener transi…
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2D materials present an interesting platform for device designs. However, oxidation can drastically change the system's properties, which need to be accounted for. Through {\it ab initio} calculations, we investigated freestanding and SiC-supported As, Sb, and Bi mono-elemental layers. The oxidation process occurs through an O$_2$ spin-state transition, accounted for within the Landau-Zener transition. Additionally, we have investigated the oxidation barriers and the role of spin-orbit coupling. Our calculations pointed out that the presence of SiC substrate reduces the oxidation time scale compared to a freestanding monolayer. We have extracted the energy barrier transition, compatible with our spin-transition analysis. Besides, spin-orbit coupling is relevant to the oxidation mechanisms and alters time scales. The energy barriers decrease as the pnictogen changes from As to Sb to Bi for the freestanding systems, while for SiC-supported, they increase across the pnictogen family. Our computed energy barriers confirm the enhanced robustness against oxidation for the SiC-supported systems.
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Submitted 30 June, 2023;
originally announced July 2023.
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Optical and electronic properties of a two-dimensional quantum ring under rotating effects
Authors:
Daniel F. Lima,
Frankbelson dos S. Azevedo,
Luís Fernando C. Pereira,
Cleverson Filgueiras,
Edilberto O. Silva
Abstract:
This work presents a study on the nonrelativistic quantum motion of a charged particle in a rotating frame, considering the Aharonov-Bohm effect and a uniform magnetic field. We derive the equation of motion and the corresponding radial equation to describe the system. The Schrödinger equation with minimal coupling incorporates rotation effects by substituting the momentum operator with an effecti…
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This work presents a study on the nonrelativistic quantum motion of a charged particle in a rotating frame, considering the Aharonov-Bohm effect and a uniform magnetic field. We derive the equation of motion and the corresponding radial equation to describe the system. The Schrödinger equation with minimal coupling incorporates rotation effects by substituting the momentum operator with an effective four-potential. Additionally, a radial potential term, dependent on the average radius of the ring, is introduced. The analysis is restricted to motion in a two-dimensional plane, neglecting the degree of freedom in the $z$-direction. By solving the radial equation, we determine the eigenvalues and eigenfunctions, allowing for an explicit expression of the energy. The probability distribution is analyzed for varying rotating parameter values, revealing a shift of the distribution as the rotation changes, resulting in a centrifugal effect and occupation of the ring's edges. Furthermore, numerical analysis demonstrates the significant rotational effects on energy levels and optical properties, including optical absorption and refractive coefficients.
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Submitted 25 May, 2023;
originally announced May 2023.
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Bridging Borophene and Metal Surfaces: Structural, Electronic, and Electron Transport Properties
Authors:
Wanderlã L. Scopel,
F. Crasto de Lima,
Pedro H. Souza,
José E. Padilha,
Roberto H. Miwa
Abstract:
Currently, solid interfaces composed of two-dimensional materials (2D) in contact with metal surfaces (m-surf) have been the subject of intense research, where the borophene bilayer (BBL) has been considered a prominent material for the development of electronic devices based on 2D platforms. In this work, we present a theoretical study of the energetic, structural, and electronic properties of th…
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Currently, solid interfaces composed of two-dimensional materials (2D) in contact with metal surfaces (m-surf) have been the subject of intense research, where the borophene bilayer (BBL) has been considered a prominent material for the development of electronic devices based on 2D platforms. In this work, we present a theoretical study of the energetic, structural, and electronic properties of the BBL/m-surf interface, with m-surf = Ag, Au, and Al (111) surfaces, and the electronic transport properties of BBL channels connected to the BBL/m-surf top contacts. We find that the bottom-most BBL layer becomes metalized, due to the orbital hybridization with the metal surface states, resulting in BBL/m-surf ohmic contacts, meanwhile, the inner and top-most boron layers kept their semiconducting character. The net charge transfers reveal that BBL has become $n$-type ($p$-type) doped for m-surf = Ag, and Al (= Au). A thorough structural characterization of the BBL/m-surf interface, using a series of simulations of the X-ray photoelectron spectra, shows that the formation of BBL/m-surf interface is characterized by a redshift of the B-$1s$ spectra. Further electronic transport results revealed the emergence of a Schottky barrier between 0.1 and 0.2\,eV between the BBL/m-surf contact and the BBL channels. We believe that our findings are timely, bringing important contributions to the applicability of borophene bilayers for developing 2D electronic devices.
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Submitted 10 May, 2023;
originally announced May 2023.
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Metallic-insulator phase transitions in the extended Harper model
Authors:
João Chakrian,
Marcelo L. Lyra,
Jonas R. F. Lima
Abstract:
In this work we investigate the transport properties of non-relativistic quantum particles on incommensurate multilayered structures with the thicknesses $w_n$ of the layers following an extended Harper model given by $w_n = w_0 |\cos(πa n^ν)|$. For the normal incidence case, which means an one-dimensional system, we obtained that for a specific range of energy, it is possible to see a metallic-in…
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In this work we investigate the transport properties of non-relativistic quantum particles on incommensurate multilayered structures with the thicknesses $w_n$ of the layers following an extended Harper model given by $w_n = w_0 |\cos(πa n^ν)|$. For the normal incidence case, which means an one-dimensional system, we obtained that for a specific range of energy, it is possible to see a metallic-insulator transition with the exponent $ν$. A metallic phase is supported for $ν<1$. We also obtained that for the specific value $ν=1$ there is an alternation between metallic and insulator phases as we change the disorder strength $w_0$. When we integrate out all incidence angles, which means a two-dimensional system, the metallic-insulator transition can be seen for much larger range of energy compared to the normal incidence case.
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Submitted 25 April, 2023;
originally announced April 2023.
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Interface and electromagnetic effects in the valley splitting of Si quantum dots
Authors:
Jonas R. F. Lima,
Guido Burkard
Abstract:
The performance and scalability of silicon spin qubits depend directly on the value of the conduction band valley splitting. In this work, we investigate the influence of electromagnetic fields and the interface width on the valley splitting of a quantum dot in a Si/SiGe heterostructure. We propose a new three-dimensional theoretical model within the effective mass theory for the calculation of th…
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The performance and scalability of silicon spin qubits depend directly on the value of the conduction band valley splitting. In this work, we investigate the influence of electromagnetic fields and the interface width on the valley splitting of a quantum dot in a Si/SiGe heterostructure. We propose a new three-dimensional theoretical model within the effective mass theory for the calculation of the valley splitting in such heterostructures that takes into account the concentration fluctuation at the interfaces and the lateral confinement. With this model, we predict that the electric field is an important parameter for valley splitting engineering, since it can shift the probability distribution away from small valley splittings for some interface widths. We also obtain a critical softness of the interfaces in the heterostructure, above which the best option for spin qubits is to consider an interface as wide as possible.
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Submitted 23 March, 2023;
originally announced March 2023.
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Droplet Finite-Size Scaling of the Majority Vote Model on Quenched Scale-Free Networks
Authors:
D. S. M. Alencar,
T. F. A. Alves,
F. W. S. Lima,
R. S. Ferreira,
G. A. Alves,
A. Macedo-Filho
Abstract:
We consider the Majority Vote model coupled with scale-free networks. Recent works point to a non-universal behavior of the Majority Vote model, where the critical exponents depend on the connectivity while the network's effective dimension $D_\mathrm{eff}$ is unity for a degree distribution exponent $5/2<γ<7/2$. We present a finite-size theory of the Majority Vote Model for uncorrelated networks…
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We consider the Majority Vote model coupled with scale-free networks. Recent works point to a non-universal behavior of the Majority Vote model, where the critical exponents depend on the connectivity while the network's effective dimension $D_\mathrm{eff}$ is unity for a degree distribution exponent $5/2<γ<7/2$. We present a finite-size theory of the Majority Vote Model for uncorrelated networks and present generalized scaling relations with good agreement with Monte-Carlo simulation results. The presented finite-size theory has two main sources of size dependence. The first source is an external field describing a mass media influence on the consensus formation and the second source is the scale-free network cutoff. The model indeed presents non-universal critical behavior where the critical exponents depend on the degree distribution exponent $5/2<γ<7/2$. For $γ\geq 7/2$, the model is on the same universality class of the Majority Vote model on Erdös-Renyi random graphs, while for $γ=7/2$, the critical behavior presents additional logarithmic corrections.
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Submitted 1 March, 2023;
originally announced March 2023.
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Uncovering the Structural Evolution Arsenene on SiC Substrate
Authors:
A. K. Okazaki,
R. Furlan de Oliveira,
R. L. H. Freire,
A. Fazzio,
F. Crasto de Lima
Abstract:
Two-dimensional arsenic allotropes have been grown on metallic surfaces, while topological properties have been theoretically described on strained structures. Here we experimentally grow arsenene by molecular beam epitaxy over the insulating SiC substrate. The arsenene presents a flat structure with a strain field that follows the SiC surface periodicity. Our ab initio simulations, based on the d…
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Two-dimensional arsenic allotropes have been grown on metallic surfaces, while topological properties have been theoretically described on strained structures. Here we experimentally grow arsenene by molecular beam epitaxy over the insulating SiC substrate. The arsenene presents a flat structure with a strain field that follows the SiC surface periodicity. Our ab initio simulations, based on the density functional theory, corroborate the experimental observation. The strained structure presents a new arsenene allotrope with a triangular structure, rather than the honeycomb previously predicted for other pnictogens. This strained structure presents a Peierls-like transition leading to an indirect gap semiconducting behavior.
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Submitted 10 February, 2023;
originally announced February 2023.
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Epidemic Outbreaks on Quenched Scale-Free Networks
Authors:
D. S. M. Alencar,
T. F. A. Alves,
F. W. S. Lima,
G. A. Alves,
A. Macedo-Filho,
R. S. Ferreira
Abstract:
We present a finite-size scaling theory of a contact process with permanent immunity on uncorrelated scale-free networks. We model an epidemic outbreak by an analog of the susceptible-infected-removed model where an infected individual attacks only one susceptible in a time unit in a way we can expect a non-vanishing critical threshold at scale-free networks. As we already know, the susceptible-in…
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We present a finite-size scaling theory of a contact process with permanent immunity on uncorrelated scale-free networks. We model an epidemic outbreak by an analog of the susceptible-infected-removed model where an infected individual attacks only one susceptible in a time unit in a way we can expect a non-vanishing critical threshold at scale-free networks. As we already know, the susceptible-infected-removed model can be mapped in a bond percolation process, allowing us to compare the critical behavior of site and bond universality classes on networks. We used the external field finite-scale theory, where the dependence on the finite size enters the external field defined as the initial number of infected individuals. We can impose the scale of the external field as $N^{-1}$. The system presents an epidemic-endemic phase transition where the critical behavior obeys the mean-field universality class, as we show theoretically and by simulations.
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Submitted 18 December, 2022;
originally announced December 2022.
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Topological insulating phase arising in transition metal dichalcogenide alloy
Authors:
F. Crasto de Lima,
B. Focassio,
R. H. Miwa,
A. Fazzio
Abstract:
Transition metal dichalcogenides have been the subject of numerous studies addressing technological applications and fundamental issues. Single-layer PtSe2 is a semiconductor with a trivial bandgap, in contrast, its counterpart with 25% of Se atoms substituted by Hg, Pt2HgSe3 (jacutingaite, a naturally occurring mineral), is a 2D topological insulator with a large bandgap. Based on ab-initio calcu…
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Transition metal dichalcogenides have been the subject of numerous studies addressing technological applications and fundamental issues. Single-layer PtSe2 is a semiconductor with a trivial bandgap, in contrast, its counterpart with 25% of Se atoms substituted by Hg, Pt2HgSe3 (jacutingaite, a naturally occurring mineral), is a 2D topological insulator with a large bandgap. Based on ab-initio calculations, we investigate the energetic stability, and the topological transition in Pt(HgxSe1-x)2 as a function of alloy concentration, and the distribution of Hg atoms embedded in the PtSe2 host. Our findings reveal the dependence of the topological phase with respect to the alloy concentration and robustness with respect distribution of Hg. Through a combination of our ab-initio results and a defect wave function percolation model, we estimate the random alloy concentration threshold for the topological transition to be only 9%. Our results expand the possible search for non-trivial topological phases in random alloy systems.
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Submitted 12 December, 2022;
originally announced December 2022.
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Wave transmission and its universal fluctuations in one-dimensional systems with Lévy-like disorder: Schrödinger, Klein-Gordon and Dirac equations
Authors:
Anderson L. R. Barbosa,
Jonas R. F. Lima,
Luiz Felipe C. Pereira
Abstract:
We investigate the propagation of waves in one-dimensional systems with Lévy-type disorder. We perform a complete analysis of non-relativistic and relativistic wave transmission submitted to potential barriers whose width, separation or both follow Lévy distributions characterized by an exponent $0 < α<1$. For the first two cases, where one of the parameters is fixed, non-relativistic and relativi…
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We investigate the propagation of waves in one-dimensional systems with Lévy-type disorder. We perform a complete analysis of non-relativistic and relativistic wave transmission submitted to potential barriers whose width, separation or both follow Lévy distributions characterized by an exponent $0 < α<1$. For the first two cases, where one of the parameters is fixed, non-relativistic and relativistic waves present anomalous localization, $\langle T \rangle \propto L^{-α}$. However, for the latter case, in which both parameters follow a Lévy distribution, non-relativistic and relativistic waves present a transition between anomalous and standard localization as the incidence energy increases relative to the barrier height. Moreover, we obtain the localization diagram delimiting anomalous and standard localization regimes, in terms of incidence angle and energy. Finally, we verify that transmission fluctuations, characterized by its standard deviation, are universal, independent of barrier architecture, wave equation type, incidence energy and angle, further extending earlier studies on electronic localization.
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Submitted 17 October, 2022;
originally announced October 2022.
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Breakdown of topological protection due to non-magnetic edge disorder in two-dimensional materials in the Quantum Spin Hall phase
Authors:
Leandro R. F. Lima,
Caio Lewenkopf
Abstract:
We study the suppression of the conductance quantization in quantum spin Hall systems by a combined effect of electronic interactions and edge disorder, that is ubiquitous in exfoliated and CVD grown 2D materials. We show that the interplay between the electronic localized states due to edge defects and electron-electron interactions gives rise to local magnetic moments, that break time-reversal s…
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We study the suppression of the conductance quantization in quantum spin Hall systems by a combined effect of electronic interactions and edge disorder, that is ubiquitous in exfoliated and CVD grown 2D materials. We show that the interplay between the electronic localized states due to edge defects and electron-electron interactions gives rise to local magnetic moments, that break time-reversal symmetry and the topological protection of the edge states in 2D topological systems. Our results suggest that edge disorder leads to small deviations of a perfect quantized conductance in short samples and to a strong conductance suppression in long ones. Our analysis is based on on the Kane-Mele model, an unrestricted Hubbard mean field Hamiltonian and on a self-consistent recursive Green's functions technique to calculate the transport quantities.
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Submitted 7 October, 2022;
originally announced October 2022.
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Nanoscale Structural and Electronic Properties of Cellulose/Graphene Interfaces
Authors:
Gustavo H. Silvestre,
Felipe Crasto de Lima,
Juliana S. Bernardes,
Adalberto Fazzio,
Roberto H. Miwa
Abstract:
The development of electronic devices based on the functionalization of (nano)cellulose platforms relies upon an atomistic understanding of the structural, and electronic properties of the combined system, cellulose/functional element. In this work, we present a theoretical study of the nanocellulose/graphene interface (nCL/G) based on first-principles calculations. We find that the binding energi…
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The development of electronic devices based on the functionalization of (nano)cellulose platforms relies upon an atomistic understanding of the structural, and electronic properties of the combined system, cellulose/functional element. In this work, we present a theoretical study of the nanocellulose/graphene interface (nCL/G) based on first-principles calculations. We find that the binding energies of both hydrophobic/G (nCL$^{\rm phob}$/G) and hydrophilic/G (nCL$^{\rm phil}$/G) interfaces are primarily dictated by the van der Waals interactions, and are comparable with that of their 2D interface counterparts. We verify that the energetic preference of nCL$^{\rm phob}$/G has been reinforced by the inclusion of an aqueous media via the implicit solvation model. Further structural characterization was carried out using a set of simulations of Carbon K-edge X-ray absorption spectra to identify and distinguish the key absorption features of the nCL$^{\rm phob}$/G and nCL$^{\rm phil}$/G interfaces. The electronic structure calculations reveal that the linear energy bands of graphene lie in the band gap of the nCL, sheet, while depletion/accumulation charge density regions are observed. We show that external agents, i.e. electric field and mechanical strain, allow for tunability of the Dirac cone and the charge density at the interface. The control/maintenance of the Dirac cone states in nCL/G is an important feature for the development of electronic devices based on cellulosic platforms.
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Submitted 24 August, 2022;
originally announced August 2022.
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Vacancy localization effects on MX2 transition metal dichalcogenides: a systematic ab-initio study
Authors:
Rafael L. H. Freire,
Felipe Crasto de Lima,
Adalberto Fazzio
Abstract:
Two-dimensional transition metal dichalcogenides (MX$_2$) vacancy formation energetics is extensively investigated. Within an ab-initio approach we study the MX$_2$ systems, with M=Mo, W, Ni, Pd and Pt, and X=S, Se, and Te. Here we classify that chalcogen vacancies are always energetic favorable over the transition metal ones. However, for late transition metals Pd $4d$, and Pt $5d$ the metal vaca…
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Two-dimensional transition metal dichalcogenides (MX$_2$) vacancy formation energetics is extensively investigated. Within an ab-initio approach we study the MX$_2$ systems, with M=Mo, W, Ni, Pd and Pt, and X=S, Se, and Te. Here we classify that chalcogen vacancies are always energetic favorable over the transition metal ones. However, for late transition metals Pd $4d$, and Pt $5d$ the metal vacancy are experimentally achievable, bringing up localized magnetic moments within the semiconducting matrix. By quantifying the localization of the chalcogen vacancy states we evidentiate that it rules the intra- and inter-vacancy interactions that establish both the number of vacancy states neatly lying within the semiconducting gap, as well as its electronic dispersion and SOC splitting. Combining different vacancies and phase variability 1T and 1H of the explored systems allow us to construct a guiding picture for the vacancy states localization.
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Submitted 5 May, 2022;
originally announced May 2022.
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The role of functional thiolated molecules on the enhanced electronic transport of interconnected MoS$_2$ nanostructures
Authors:
Rafael L. H. Freire,
Felipe Crasto de Lima,
Rafael Furlan de Oliveira,
Rodrigo B. Capaz,
Adalberto Fazzio
Abstract:
Molecular linkers have emerged as an effective strategy to improve electronic transport properties on solution-processed layered materials via defect functionalization. However, a detailed discussion on the microscopic mechanisms behind the beneficial effects of functionalization is still missing. Here, by first-principles calculations based on density functional theory, we investigate the effects…
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Molecular linkers have emerged as an effective strategy to improve electronic transport properties on solution-processed layered materials via defect functionalization. However, a detailed discussion on the microscopic mechanisms behind the beneficial effects of functionalization is still missing. Here, by first-principles calculations based on density functional theory, we investigate the effects on the electronic properties of interconnected MoS$_2$ model flakes systems upon functionalization with different thiol molecule linkers, namely thiophenol, 1,4-benzenedithiol, 1,2-ethanedithiol, and 1,3-propanedithiol. The bonding of benzene- and ethanedithiol bridging adjacent armchair MoS$_2$ nanoflakes leads to electronic states just above or at the Fermi level, thus forming a molecular channel for electronic transport between flakes. In addition, the molecular linker reduces the potential barrier for thermally activated hopping between neighboring flakes, improving the conductivity as verified in experiments. The comprehension of such mechanisms helps in future developments of solution-processed layered materials for use on 2D electronic devices.
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Submitted 17 March, 2022;
originally announced March 2022.
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Phase Diagram of the Contact Process on Barabasi-Albert Networks
Authors:
D. S. M. Alencar,
T. F. A. Alves,
G. A. Alves,
R. S. Ferreira,
A. Macedo-Filho,
F. W. S. Lima
Abstract:
We show results for the contact process on Barabasi networks. The contact process is a model for an epidemic spreading without permanent immunity that has an absorbing state. For finite lattices, the absorbing state is the true stationary state, which leads to the need for simulation of quasi-stationary states, which we did in two ways: reactivation by inserting spontaneous infected individuals, o…
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We show results for the contact process on Barabasi networks. The contact process is a model for an epidemic spreading without permanent immunity that has an absorbing state. For finite lattices, the absorbing state is the true stationary state, which leads to the need for simulation of quasi-stationary states, which we did in two ways: reactivation by inserting spontaneous infected individuals, or by the quasi-stationary method, where we store a list of active states to continue the simulation when the system visits the absorbing state. The system presents an absorbing phase transition where the critical behavior obeys the Mean Field exponents $β=1$, $γ'=0$, and $ν=2$. However, the different quasi-stationary states present distinct finite-size logarithmic corrections. We also report the critical thresholds of the model as a linear function of the network connectivity inverse $1/z$, and the extrapolation of the critical threshold function for $z \to \infty$ yields the basic reproduction number $R_0=1$ of the complete graph, as expected. Decreasing the network connectivity leads to the increase of the critical basic reproduction number $R_0$ for this model.
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Submitted 21 January, 2022;
originally announced January 2022.
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Electronic properties of the Weyl semimetals Co$_2$MnX (X=Si, Ge, Sn)
Authors:
Abhishek Sharan,
Felipe Crasto de Lima,
Shoaib Khalid,
Roberto H. Miwa,
Anderson Janotti
Abstract:
Using first-principles electronic structure calculations, we show that ferromagnetic Heusler compounds Co$_2$MnX (X= Si, Ge, Sn) present non-trivial topological characteristics and belong to the category of Weyl semimetals. These materials exhibit two topologically interesting band crossings near the Fermi level. These band crossings have complex 3D geometries in the Brillouin zone and are charact…
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Using first-principles electronic structure calculations, we show that ferromagnetic Heusler compounds Co$_2$MnX (X= Si, Ge, Sn) present non-trivial topological characteristics and belong to the category of Weyl semimetals. These materials exhibit two topologically interesting band crossings near the Fermi level. These band crossings have complex 3D geometries in the Brillouin zone and are characterized by non-trivial topology as Hopf links and chain-like nodal lines, that are protected by the perpendicular mirror planes. The spin-orbit interaction split these nodal lines into several zero-dimensional Weyl band crossings. Unlike previously known topologically non-trivial Heusler materials, these majority-spin band crossings lie in the band gap of minority spin bands, potentially facilitating its experimental realization.
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Submitted 28 November, 2021;
originally announced November 2021.
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Effect of laser surface hardening on a low carbon steel substrate wear and hardness
Authors:
Matheus Rodrigues Furlani,
Sheila Medeiros de Carvalho,
Milton Sergio Fernandes de Lima
Abstract:
Laser surface hardening (LSH) is an effective process to produce hard and wear resistant steel surfaces. This work produced hardened surfaces using a fiber laser in a bare (B. uncoated) and carbon-coated (C) conditions. The obtained hardness and microstructure were compatible to martensite (B) and cementite (C) major constituents. A low coefficient of friction was obtained using C-condition. The t…
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Laser surface hardening (LSH) is an effective process to produce hard and wear resistant steel surfaces. This work produced hardened surfaces using a fiber laser in a bare (B. uncoated) and carbon-coated (C) conditions. The obtained hardness and microstructure were compatible to martensite (B) and cementite (C) major constituents. A low coefficient of friction was obtained using C-condition. The treated surface also presented little damage during a reciprocating wear against a hard metal sphere.
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Submitted 25 November, 2021;
originally announced November 2021.
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Modified Epidemic Diffusive Process on the Apollonian Network
Authors:
D. S. M. Alencar,
A. Macedo-Filho,
T. F. A. Alves,
G. A. Alves,
R. S. Ferreira,
F. W. S. Lima
Abstract:
We present an analysis of an epidemic spreading process on the Apollonian network that can describe an epidemic spreading in a non-sedentary population. The modified diffusive epidemic process was employed in this analysis in a computational context by means of the Monte Carlo method. Our model has been useful for modeling systems closer to reality consisting of two classes of individuals: suscept…
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We present an analysis of an epidemic spreading process on the Apollonian network that can describe an epidemic spreading in a non-sedentary population. The modified diffusive epidemic process was employed in this analysis in a computational context by means of the Monte Carlo method. Our model has been useful for modeling systems closer to reality consisting of two classes of individuals: susceptible (A) and infected (B). The individuals can diffuse in a network according to constant diffusion rates $D_{A}$ and $D_{B}$, for the classes A and B, respectively, and obeying three diffusive regimes, i.e., $D_{A}<D_{B}$, $D_{A}=D_{B}$ and $D_{A}>D_{B}$. Into the same site $i$, the reaction occurs according to the dynamical rule based on Gillespie's algorithm. Finite-size scaling analysis has shown that our model exhibit continuous phase transition to an absorbing state with a set of critical exponents given by $β/ν=0.66(1)$, $1/ν=0.46(2)$, and $γ/ν=-0.24(2)$ common to every investigated regime. In summary, the continuous phase transition, characterized by this set of critical exponents, does not have the same exponents of the Mean-Field universality class in both regular lattices and complex networks.
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Submitted 26 October, 2021;
originally announced October 2021.
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At the verge of topology: vacancy-driven quantum spin Hall in trivial insulators
Authors:
F. Crasto de Lima,
Adalberto Fazzio
Abstract:
Vacancies in materials structure -- lowering its atomic density -- take the system closer to the atomic limit, to which all systems are topologically trivial. Here we show a mechanism of mediated interaction between vacancies inducing a topologically non-trivial phase. Within an {\it ab initio} approach we explore topological transition dependence with the vacancy density in transition metal dicha…
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Vacancies in materials structure -- lowering its atomic density -- take the system closer to the atomic limit, to which all systems are topologically trivial. Here we show a mechanism of mediated interaction between vacancies inducing a topologically non-trivial phase. Within an {\it ab initio} approach we explore topological transition dependence with the vacancy density in transition metal dichalcogenides. As a case of study, we focus on the PtSe$_2$, to which pristine form is a trivial semiconductor with an energy gap of $1.2$\,eV. The vacancies states lead to a large topological gap of $180$\,meV within the pristine system gap. We derive an effective model describing this topological phase in other transition metal dichalcogenide systems. The mechanism driving the topological phase allows the construction of backscattering protected metallic channels embedded in a semiconducting host.
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Submitted 24 September, 2021;
originally announced September 2021.
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Amorphous Bi$_2$Se$_3$ structural, electronic, and topological nature by first-principles
Authors:
Bruno Focassio,
Gabriel R. Schleder,
F. Crasto de Lima,
Caio Lewenkopf,
Adalberto Fazzio
Abstract:
Crystalline $\rm Bi_2Se_3$ is one of the most explored three-dimensional topological insulator, with a $0.3\;\rm eV$ energy gap making it promising for applications. Its amorphous counterpart could bring to light new possibilities for large scale synthesis and applications. Using ab initio molecular dynamics simulations, we have studied realistic amorphous $\rm Bi_2Se_3$ phases generated by differ…
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Crystalline $\rm Bi_2Se_3$ is one of the most explored three-dimensional topological insulator, with a $0.3\;\rm eV$ energy gap making it promising for applications. Its amorphous counterpart could bring to light new possibilities for large scale synthesis and applications. Using ab initio molecular dynamics simulations, we have studied realistic amorphous $\rm Bi_2Se_3$ phases generated by different processes of melting, quenching, and annealing. Extensive structural and electronic characterizations show that the melting process induces an energy gap decrease ruled by growth of the defective local environments. This behavior dictates a weak stability of the topological phase to disorder, characterized by the spin Bott index. Interestingly, we identify the occurrence of topologically trivial surface states in amorphous $\rm Bi_2Se_3$ that show a strong resemblance with standard helical topological states. Our results and methods advance the search of topological phases in three-dimensional amorphous solids.
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Submitted 13 December, 2021; v1 submitted 22 September, 2021;
originally announced September 2021.
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Diffusive Majority Vote Model
Authors:
J. R. S. Lima,
F. W. S. Lima,
T. F. A. Alves,
G. A. Alves,
A. Macedo-Filho
Abstract:
We define a stochastic reaction-diffusion process that describes a consensus formation in a non-sedentary population. The process is a diffusive version of the Majority Vote model, where the state update follows two stages: in the first stage, spins are allowed to hop to neighbor nodes with different probabilities for the respective spin orientation, and in the second stage, the spins in the same…
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We define a stochastic reaction-diffusion process that describes a consensus formation in a non-sedentary population. The process is a diffusive version of the Majority Vote model, where the state update follows two stages: in the first stage, spins are allowed to hop to neighbor nodes with different probabilities for the respective spin orientation, and in the second stage, the spins in the same node can change its values according to the majority vote update rule. The model presents a consensus formation phase when concentration is greater than a threshold value, and a paramagnetic phase on the converse for equal diffusion probabilities, i.e., maintaining the inversion symmetry. The threshold vanishes for unequal diffusion probabilities, which means that the system has a consensus state for all values of population densities. The stationary collective opinion is dominated by the individuals that diffuse more.
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Submitted 27 August, 2021;
originally announced August 2021.
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Seebeck and Nernst effects in topological insulator: the case of strained HgTe
Authors:
Francisco J. Peña,
Oscar Negrete,
Ning Ma,
Patricio Vargas,
Mario Reis,
Leandro R. F. Lima
Abstract:
We theoretically study the thermoelectric transport properties of strained HgTe in the topological insulator phase. We developed a model for the system using a Dirac Hamiltonian including the effect of strain induced by the interface between HgTe and the CdTe substrate. The conductivity tensor was explored assuming the electrons are scattered by charge impurities, while the thermopower tensor was…
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We theoretically study the thermoelectric transport properties of strained HgTe in the topological insulator phase. We developed a model for the system using a Dirac Hamiltonian including the effect of strain induced by the interface between HgTe and the CdTe substrate. The conductivity tensor was explored assuming the electrons are scattered by charge impurities, while the thermopower tensor was addressed using the Mott relation. Seebeck and Nernst responses exhibit remarkable enhancements in comparison with other two-dimensional Dirac materials, such as graphene, germanane, prosphorene and stanene. The intensity of these termoeletric responses, their dependencies with the external perpendicular magnetic field and temperature are also addressed.
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Submitted 12 July, 2021;
originally announced July 2021.
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Machine learning of microscopic ingredients for graphene oxide/cellulose interaction
Authors:
Romana Petry,
Gustavo Silvestre,
Bruno Focassio,
F. Crasto de Lima,
Roberto H. Miwa,
Adalberto Fazzio
Abstract:
Understanding the role of microscopic attributes in nanocomposites allows for a controlled and, therefore, acceleration in experimental system designs. In this work, we extracted the relevant parameters controlling the graphene oxide binding strength to cellulose by combining first-principles calculations and machine learning algorithms. We were able to classify the systems among two classes with…
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Understanding the role of microscopic attributes in nanocomposites allows for a controlled and, therefore, acceleration in experimental system designs. In this work, we extracted the relevant parameters controlling the graphene oxide binding strength to cellulose by combining first-principles calculations and machine learning algorithms. We were able to classify the systems among two classes with higher and lower binding energies, which are well defined based on the isolated graphene oxide features. By a theoretical X-ray photoelectron spectroscopy analysis, we show the extraction of these relevant features. Additionally, we demonstrate the possibilities of a refined control within a machine learning regression between the binding energy values and the system's characteristics. Our work presents a guiding map to the control graphene oxide/cellulose interaction.
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Submitted 2 July, 2021;
originally announced July 2021.
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Unveiling the dopant segregation effect at hematite interfaces
Authors:
Felipe Crasto de Lima,
Gabriel R. Schleder,
João B. Souza Junior,
Flavio L. Souza,
Fabrício B. Destro,
Roberto H. Miwa,
Edson R. Leite,
Adalberto Fazzio
Abstract:
Understanding the effects of atomic structure modification in hematite photoanodes is essential for the rational design of high-efficiency functionalizations. Recently it was found that interface modification with Sn/Sb segregates considerably increases hematite photocatalytic efficiency. However, the understanding of the different electronic effects of these modifications at the atomic level is s…
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Understanding the effects of atomic structure modification in hematite photoanodes is essential for the rational design of high-efficiency functionalizations. Recently it was found that interface modification with Sn/Sb segregates considerably increases hematite photocatalytic efficiency. However, the understanding of the different electronic effects of these modifications at the atomic level is still lacking. This letter describes the segregation effects of two different dopants-Sn and Sb-on both the solid-solid (grain-boundaries) and solid-liquid interfaces (surfaces) of hematite. Within an ab-initio approach, we quantitatively extract the potential barrier reduction on polycrystalline interfaces due to the dopant, which causes an increase in the inter-grain electron transport. Concomitantly, the dopants' segregation on hematite surfaces results in a decrease of the oxygen vacancy formation energy. Such vacancies lead to the experimentally observed rise of the flat-band potential. The comprehension of the electronic effects of dopants on both types of interfaces explains the experimental peak efficiency of interface-modified hematite with dopant segregates, also enabling the control and design of interfaces for different higher-efficiency applications.
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Submitted 3 May, 2021;
originally announced May 2021.
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Local equilibrium charge and spin currents in two-dimensional topological systems
Authors:
Leandro R. F. Lima,
Caio Lewenkopf
Abstract:
We study the equilibrium and nonequilibrium electronic transport properties of multiprobe topological systems using a combination of the Landauer-Büttiker approach and nonequilibrium Green's functions techniques. We obtain general expressions for both nonequilibrium and equilibrium local electronic currents that, by suitable projections, allow one to compute charge, spin, valley, and orbital curre…
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We study the equilibrium and nonequilibrium electronic transport properties of multiprobe topological systems using a combination of the Landauer-Büttiker approach and nonequilibrium Green's functions techniques. We obtain general expressions for both nonequilibrium and equilibrium local electronic currents that, by suitable projections, allow one to compute charge, spin, valley, and orbital currents. We show that external magnetic fields give rise to equilibrium charge currents in mesoscopic system and study the latter in the quantum Hall regime. Likewise, a spin-orbit interaction leads to local equilibrium spin currents, that we analyze in the quantum spin Hall regime.
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Submitted 23 February, 2022; v1 submitted 14 April, 2021;
originally announced April 2021.
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Magnetic and geometric effects on the electronic transport of metallic nanotubes
Authors:
Felipe Serafim,
Fernando A. N. Santos,
Jonas R. F. Lima,
Sébastien Fumeron,
Bertrand Berche,
Fernando Moraes
Abstract:
The investigation of curved low-dimensional systems is a topic of great research interest. Such investigations include two-dimensional systems with cylindrical symmetry. In this work, we present a numerical study of the electronic transport properties of metallic nanotubes deviating from the cylindrical form either by having a bump or a depression, and under the influence of a magnetic field. Unde…
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The investigation of curved low-dimensional systems is a topic of great research interest. Such investigations include two-dimensional systems with cylindrical symmetry. In this work, we present a numerical study of the electronic transport properties of metallic nanotubes deviating from the cylindrical form either by having a bump or a depression, and under the influence of a magnetic field. Under these circumstances, it is found that the nanotube may be used as an energy high-pass filter for electrons. It is also shown that the device can be used to tune the angular momentum of transmitted electrons.
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Submitted 11 January, 2021;
originally announced January 2021.
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Bandgap evolution in nanographene assemblies
Authors:
F. Crasto de Lima,
A. Fazzio
Abstract:
Recently cycloarene has been experimentally obtained in a self-assembled structure, forming graphene-like monoatomic layered systems. Here, we establish the bandgap engineering/prediction in cycloarene assemblies within a combination of density functional theory and tight-binding Hamiltonians. Our results show a weak dependence of the gap with the assembly geometry, contrasting a strong dependence…
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Recently cycloarene has been experimentally obtained in a self-assembled structure, forming graphene-like monoatomic layered systems. Here, we establish the bandgap engineering/prediction in cycloarene assemblies within a combination of density functional theory and tight-binding Hamiltonians. Our results show a weak dependence of the gap with the assembly geometry, contrasting a strong dependence with the inter-molecule bond density. We derived a effective model that allows the interpretation of the arising energy gap for general particle-hole symmetric molecular arranges based on inter-molecular bond strength.
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Submitted 22 April, 2021; v1 submitted 5 January, 2021;
originally announced January 2021.
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Electronic, magnetic and optical properties of penta-BN$_2$ nanoribbons: a first principles study
Authors:
M. A. L. Dantas,
N. F. Frazão,
David L. Azevedo,
Jonas R. F. Lima
Abstract:
The search for new materials is a very intense task in many technological areas. In 2015, a new variant of graphene was proposed, the pentagraphene, which was followed by the propose of a pentagonal boron nitride structure called penta-BN$_2$. Based on these structures, we investigated the electronic, magnetic, and optical properties of penta-BN$_2$ nanoribbons (p-BNNRs) considering four different…
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The search for new materials is a very intense task in many technological areas. In 2015, a new variant of graphene was proposed, the pentagraphene, which was followed by the propose of a pentagonal boron nitride structure called penta-BN$_2$. Based on these structures, we investigated the electronic, magnetic, and optical properties of penta-BN$_2$ nanoribbons (p-BNNRs) considering four different kinds of edges, carefully closing the valence shells with H atoms to prevent dangling bonds. To achieve this goal, we used first-principles calculations in a density functional theory framework. Our findings showed that the p-BNNRs have a rich magneto-electronic behavior, varying from semiconductor to half-metal. We obtained that they are ferrimagnetic, having an intrinsic magnetism, which allow potential applications in spintronic or spinwaves. From an optical absorption point of view, they mainly absorb at ultraviolet region of the spectrum, especially at UV-B region, which could indicate a potential application as a UV filter.
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Submitted 4 January, 2021;
originally announced January 2021.
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Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb
Authors:
Shouvik Chatterjee,
Felipe Crasto de Lima,
John A. Logan,
Yuan Fang,
Hadass Inbar,
Aranya Goswami,
Connor Dempsey,
Shoaib Khalid,
Tobias Brown-Heft,
Yu-Hao Chang,
Taozhi Guo,
Daniel Pennacchio,
Nathaniel Wilson,
Jason Dong,
Shalinee Chikara,
Alexey Suslov,
Alexei V. Fedorov,
Dan Read,
Jennifer Cano,
Anderson Janotti,
Christopher J. Palmstrom
Abstract:
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controll…
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Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise give rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g-factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semi-metallic bulk band structure, as is the case in multi-functional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures.
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Submitted 3 January, 2022; v1 submitted 23 December, 2020;
originally announced December 2020.
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Electronic, optical, vibrational and thermodynamic properties of phaBN structure: a first principles study
Authors:
J. M. Pontes,
N. F. Frazão,
David L. Azevedo,
Jonas R. F. Lima
Abstract:
In 2015, a new two dimensional (2D) carbon allotrope, called phagraphene, was theoretically proposed. Based on this structure, we propose here a new boron nitride structure called phaBN. It is composed by three types of rings: pentagons, hexagons and heptagons. We investigate the electronic, optical, vibrational and thermodynamic properties of phaBN using first-principles calculations in a density…
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In 2015, a new two dimensional (2D) carbon allotrope, called phagraphene, was theoretically proposed. Based on this structure, we propose here a new boron nitride structure called phaBN. It is composed by three types of rings: pentagons, hexagons and heptagons. We investigate the electronic, optical, vibrational and thermodynamic properties of phaBN using first-principles calculations in a density functional theory (DFT) framework. Our calculations revealed that the phaBN has an energy gap of 2.739 eV, which is almost half of the energy gap of the hexagonal boron nitride (h-BN), thus being a semiconductor material. By means of the optical, vibrational and thermodynamic properties, it was possible to observe the absorption interval, the stability of the structure and its formation process, respectively.
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Submitted 1 December, 2020;
originally announced December 2020.
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Emergent quasiparticles in Euclidean tilings
Authors:
F. Crasto de Lima,
A. Fazzio
Abstract:
Material's geometrical structure is a fundamental part of their properties. The honeycomb geometry of graphene is responsible for the arising of its Dirac cone, while the kagome and Lieb lattice hosts flat bands and pseudospin-1 Dirac dispersion. These features seem to be particular for few 2D systems rather than a common occurrence. Given this correlation between structure and properties, explori…
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Material's geometrical structure is a fundamental part of their properties. The honeycomb geometry of graphene is responsible for the arising of its Dirac cone, while the kagome and Lieb lattice hosts flat bands and pseudospin-1 Dirac dispersion. These features seem to be particular for few 2D systems rather than a common occurrence. Given this correlation between structure and properties, exploring new geometries can lead to unexplored states and phenomena. Kepler is the pioneer of the mathematical tiling theory, describing ways of filing the euclidean plane with geometrical forms in its book {\it Harmonices Mundi}. In this letter, we characterize $1255$ lattices composed of the euclidean plane's k-uniform tiling, with its intrinsic properties unveiled - this class of arranged tiles present high-degeneracy points, exotic quasiparticles, and flat bands as a common feature. Here, we present aid for experimental interpretation and prediction of new 2D systems.
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Submitted 25 November, 2020; v1 submitted 22 November, 2020;
originally announced November 2020.
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Jacutingaite-family: a class of topological materials
Authors:
F. Crasto de Lima,
R. H. Miwa,
A. Fazzio
Abstract:
Jacutingate, a recently discovered Brazilian naturally occurring mineral, has shown to be the first experimental realization of the Kane-Mele topological model. In this letter we have unveiled a class of materials $M_2NX_3$ ($M$=Ni, Pt, Pd; $N$=Zn, Cd, Hg; and $X$=S, Se, Te), sharing jacutingaite's key features, i.e., high stability, and topological phase. By employing first-principles calculation…
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Jacutingate, a recently discovered Brazilian naturally occurring mineral, has shown to be the first experimental realization of the Kane-Mele topological model. In this letter we have unveiled a class of materials $M_2NX_3$ ($M$=Ni, Pt, Pd; $N$=Zn, Cd, Hg; and $X$=S, Se, Te), sharing jacutingaite's key features, i.e., high stability, and topological phase. By employing first-principles calculations we extensively characterize the energetic stability of this class while showing a common occurrence of the Kane-Mele topological phase. Here we found Pt-based materials surpassing jacutingaite's impressive topological gap and lower exfoliation barrier while retaining its stability.
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Submitted 29 October, 2020;
originally announced October 2020.
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Electronic correlations in the semiconducting half-Heusler compound FeVSb
Authors:
Estiaque H. Shourov,
Patrick J. Strohbeen,
Dongxue Du,
Abhishek Sharan,
Felipe C. de Lima,
Fanny Rodolakis,
Jessica McChesney,
Vincent Yannello,
Anderson Janotti,
Turan Birol,
Jason K. Kawasaki
Abstract:
Electronic correlations are crucial to the low energy physics of metallic systems with localized $d$ and $f$ states; however, their effect on band insulators and semiconductors is typically negligible. Here, we measure the electronic structure of the half-Heusler compound FeVSb, a band insulator with filled shell configuration of 18 valence electrons per formula unit ($s^2 p^6 d^{10}$). Angle-reso…
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Electronic correlations are crucial to the low energy physics of metallic systems with localized $d$ and $f$ states; however, their effect on band insulators and semiconductors is typically negligible. Here, we measure the electronic structure of the half-Heusler compound FeVSb, a band insulator with filled shell configuration of 18 valence electrons per formula unit ($s^2 p^6 d^{10}$). Angle-resolved photoemission spectroscopy (ARPES) reveals a mass renormalization of $m^{*}/m_{bare}= 1.4$, where $m^{*}$ is the measured effective mass and $m_{bare}$ is the mass from density functional theory (DFT) calculations with no added on-site Coulomb repulsion. Our measurements are in quantitative agreement with dynamical mean field theory (DMFT) calculations, highlighting the many-body origin of the mass renormalization. This mass renormalization lies in dramatic contrast to other filled shell intermetallics, including the thermoelectric materials CoTiSb and NiTiSn; and has a similar origin to that in FeSi, where Hund's coupling induced fluctuations across the gap can explain a dynamical self-energy and correlations. Our work calls for a re-thinking of the role of correlations and Hund's coupling in intermetallic band insulators.
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Submitted 24 September, 2020; v1 submitted 24 September, 2020;
originally announced September 2020.
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Simulation of XANES spectroscopy and the calculation of total energies for N-heterocyclic carbenes on Au(111)
Authors:
Felipe Crasto de Lima,
Adalberto Fazzio,
Alastair B. McLean,
Roberto H. Miwa
Abstract:
It has recently been demonstrated that N-heterocyclic carbenes (NHCs) form self-assembled monolayers (SAMs) on metal surfaces. Consequently, it is important to both characterize and understand their binding modes to fully exploit NHCs in functional surface systems. To assist with this effort, we have performed {\it first-principles} total energy calculations for NHCs on Au(111) and simulations of…
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It has recently been demonstrated that N-heterocyclic carbenes (NHCs) form self-assembled monolayers (SAMs) on metal surfaces. Consequently, it is important to both characterize and understand their binding modes to fully exploit NHCs in functional surface systems. To assist with this effort, we have performed {\it first-principles} total energy calculations for NHCs on Au(111) and simulations of X-ray absorption near edge structure (XANES). The NHCs we have considered are N,N-dimethyl-, N,N-diethyl-, N,N-diisopropylbenzimidazolylidene ($^B$NHC$^X$, with X=Me, Et, and iPr, respectively) and the bis-$^B$NHC$^X$ complexes with Au derived from these molecules. We present a comprehensive analysis of the energetic stability of both the $^B$NHC$^X$ and the complexes on Au(111) and, for the former, examine the role of the wing group in determining the attachment geometry. Further structural characterization is performed by calculating the nitrogen K-edge X-ray absorption spectra. Our simulated XANES results give insight into (i) the relationship between the $^B$NHC$^X$/Au geometry and the N($1s$) $\rightarrow$ $π^\ast/σ^\ast$, pre-edge/near-edge, absorption intensities, and (ii) the contributions of the molecular deformation and molecule-surface electronic interaction to the XANES spectrum. Our simulations are compared with recent experimental results.
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Submitted 20 July, 2020;
originally announced July 2020.
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Electronic transport in disordered graphene superlattices with scale-free correlated barrier spacements
Authors:
Anderson L. R. Barbosa,
Jonas R. F. Lima,
Ícaro S. F. Bezerra,
Marcelo L. Lyra
Abstract:
A transfer matrix approach is used to study the electronic transport in graphene superlattices with long-range correlated barrier spacements. By considering the low-energy electronic excitations as massless Dirac fermions, we compute by transmission spectra of graphene superlattices with potential barriers having spacements randomly distributed with long-range correlations governed by a power-law…
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A transfer matrix approach is used to study the electronic transport in graphene superlattices with long-range correlated barrier spacements. By considering the low-energy electronic excitations as massless Dirac fermions, we compute by transmission spectra of graphene superlattices with potential barriers having spacements randomly distributed with long-range correlations governed by a power-law spectral density $S(k)\propto 1/k^α$. We show that at large incidence angles, the correlations in the disorder distribution do not play a significant role in the electronic transmission. However, long-range correlations suppress the Anderson localization as normal incidence is approached and a band of transmitting modes sets up reminiscent of Klein tunneling.
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Submitted 21 May, 2020;
originally announced May 2020.